ISO 17560:2014
(Main)Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
Analyse chimique des surfaces — Spectrométrie de masse des ions secondaires — Dosage du bore dans le silicium par profilage d'épaisseur
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INTERNATIONAL ISO
STANDARD 17560
Second edition
2014-09-15
Surface chemical analysis —
Secondary-ion mass spectrometry —
Method for depth profiling of boron in
silicon
Analyse chimique des surfaces — Spectrométrie de masse des
ions secondaires — Dosage du bore dans le silicium par profilage
d’épaisseur
Reference number
ISO 17560:2014(E)
©
ISO 2014
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ISO 17560:2014(E)
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ii © ISO 2014 – All rights reserved
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ISO 17560:2014(E)
Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative reference . 1
3 Symbols and abbreviations . 1
4 Principle . 2
5 Reference materials . 2
5.1 Reference materials for determination of relative-sensitivity factors . 2
5.2 Reference materials for calibration of depth scale . 2
6 Apparatus . 2
6.1 Secondary-ion mass spectrometer . 2
6.2 Stylus profilometer . 2
6.3 Optical interferometer . 3
7 Specimen . 3
8 Procedure. 3
8.1 Adjustment of secondary-ion mass spectrometer . 3
8.2 Optimizing the secondary-ion mass spectrometer settings . 3
8.3 Specimen introduction . 4
8.4 Detected ions . 4
8.5 Measurement of test specimen . 4
8.6 Calibration . 5
9 Expression of results . 6
10 Test report . 7
Annex A (informative) Statistical report of stylus profilometry measurements .8
Bibliography .10
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ISO 17560:2014(E)
Foreword
ISO (the International Organization for Standardization) is a worldwide federation of national standards
bodies (ISO member bodies). The work of preparing International Standards is normally carried out
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electrotechnical standardization.
The procedures used to develop this document and those intended for its further maintenance are
described in the ISO/IEC Directives, Part 1. In particular the different approval criteria needed for the
different types of ISO documents should be noted. This document was drafted in accordance with the
editorial rules of the ISO/IEC Directives, Part 2 (see www.iso.org/directives).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. ISO shall not be held responsible for identifying any or all such patent rights. Details of
any patent rights identified during the development of the document will be in the Introduction and/or
on the ISO list of patent declarations received (see www.iso.org/patents).
Any trade name used in this document is information given for the convenience of users and does not
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For an explanation on the meaning of ISO specific terms and expressions related to conformity
assessment, as well as information about ISO’s adherence to the WTO principles in the Technical Barriers
to Trade (TBT) see the following URL: Foreword - Supplementary information
The committee responsible for this document is ISO/TC 201, Surface chemical analysis, Subcommittee
SC 6, Secondary ion mass spectrometry.
Annex A of this International Standard is for information only.
This second edition cancels and replaces the first edition (ISO 17560:2002), which has been technically
revised. The revision also includes editorial correction.
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ISO 17560:2014(E)
Introduction
This International Standard was prepared for the quantitative depth profiling of boron in silicon by
secondary-ion mass spectrometry (SIMS).
For quantitative depth profiling, calibration is necessary both for the concentration and the depth scales
of the profile measured. A procedure for the determination of boron in silicon has been established as
an International Standard, ISO 14237. Thus, the calibration of boron atomic concentration is performed
by following ISO 14237.
This International Standard describes standard procedures for depth profiling of boron in single-crystal,
poly-crystal, or amorphous silicon using SIMS and for depth scale calibration using stylus profilometry
or optical interferometry.
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INTERNATIONAL STANDARD ISO 17560:2014(E)
Surface chemical analysis — Secondary-ion mass
spectrometry — Method for depth profiling of boron in
silicon
1 Scope
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector
or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry
or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-
16 3
crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 10 atoms/cm
20 3
and 1 × 10 atoms/cm , and to crater depths of 50 nm or deeper.
2 Normative reference
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
ISO 14237:2010, Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron
atomic concentration in silicon using uniformly doped materials
3 Symbols and abbreviations
C total boron atomic concentration in measurement cycle i, expressed in atoms per cubic centi-
i
3
metre (atoms/cm )
10
atomic concentration of the boron isotope with mass number 10 in measurement cycle i,
C
i
3
expressed in atoms per cubic centimeter (atoms/cm )
11
atomic concentration of the boron isotope with mass number 11 in measurement cycle i,
C
i
3
expressed in atoms per cubic centimeter (atoms/cm )
d depth measured in measurement cycle i, expressed in micrometres (μm) or nanometers (nm)
i
d crater depth, expressed in micrometres (μm) or nanometres (nm)
t
10
ion intensity of the boron isotope with mass number 10 in measurement cycle i, expressed in
I
i
counts per second (counts/s)
11
ion intensity of the boron isotope with mass number 11 in measurement cycle i, expressed in
I
i
counts per second (counts/s)
Si
ion intensity of silicon matrix in measurement cycle i, expressed in counts per second
I
i
(counts/s)
10
boron to silicon ion intensity ratio for the boron isotope with mass number 10 in measure-
J
i
ment cycle i
11
boron to silicon ion intensity ratio for the boron isotope with mass number 11 in measure-
J
i
ment cycle i
10
mean background boron to silicon ion intensity ratio for the boron isotope with mass number
J
BG
10 in measurement cycle i
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ISO 17560:2014(E)
11
mean background boron to silicon ion intensity ratio for the boron isotope with mass number
J
BG
11 in measurement cycle i
N total number of measurement cycles
T total measurement time, expressed in seconds (s)
B
starting time of boron-ion acquisition in measurement cycle i, expressed in seconds (s)
t
i
B
Δt duration of boron-ion acquisition in each measurement cycle, expressed in seconds (s)
i
δ mass discrimination correction factor
λ wavelength of the light for optical interferometry, expressed in micrometres (μm) or nanome-
tres (nm)
work
RSF working relative-sensitivity factor
SIMS secondary-ion mass spectrometry
4 Principle
An oxygen-ion beam or caesium-ion beam is scanned over the specimen surface and the emitted
secondary-ions of boron and silicon from a gated region within the area scanned by the ion beam are
detected and mass-analysed. The intensities of these mass-analysed signals are monitored as a function
of sputtering time. The depth of the crater formed by the ion beam is measured by stylus profilometry
or optical interferometry for depth scale calibration.
NOTE Optical interferometry is generally applicable to crater depths in the range from 0,5 μm to 5 μm.
5 Reference materials
5.1 Reference materials for determination of relative-sensitivity factors
The reference materials should be as specified in ISO 14237:2010, Clause 4.
5.2 Reference materials for calibration of depth scale
For stylus profilometry calibration, certified reference materials or reference materials, which are
traceable to certified reference materials, shall be used.
6 Apparatus
6.1 Secondary-ion mass spectrometer
The apparatus should be as specified in ISO 14237:2010, Clause 5.
6.2 Stylus profilometer
Use a stylus profilometer with the sensitivity and tip shapes suitable for the crater shapes to be measured.
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ISO 17560:2014(E)
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