SIST EN 62047-25:2017

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon-based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (IEC 62047-25:2016)

This part of IEC 62047 specifies the in-situ testing method to measure the bonding strength of
micro bonding area which is fabricated by micromachining technologies used in silicon-based
micro-electromechanical system (MEMS).
This document is applicable to the in-situ pull-press and shearing strength measurement of
the micro bonding area fabricated by microelectronic technology process and other
micromachining technology.
Micro anchor, fixed on the substrate through the micro bonding area, provides mechanical
support of the movable sensing/actuating functional components in MEMS devices. With the
devices scaling, the bonding strength degradation, induced by defects, contaminations and
thermal mismatch stress on bonding surface, becomes severer. This standard specifies an insitu
testing method of the pull-press and shearing strength based on a patterned technique.
This document does not need intricate instruments (such as scanning probe microscopy and
nanoindenter) and to prepare the test specimen specially.
Since the testing structure in this standard can be implanted in device fabrication as a
standard detection pattern, this document can provide a bridge, by which the fabrication
foundry can give some quantitative reference for the designer.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 25: Siliziumbasierte MEMS-Herstellungstechnologie - Messverfahren zur Zug-Druck- und Scherfestigkeit gebondeter Flächen im Mikrometerbereich

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 25: Technologie de fabrication de MEMS à base de silicium - Méthode de mesure de la résistance à la traction-compression et au cisaillement d'une micro zone de brasure

L'IEC 62047-25:2016 spécifie la méthode d'essai in situ pour mesurer la résistance de brasure d'une microzone de brasure fabriquée par des technologies de micro-usinage utilisées dans un système microélectromécanique (MEMS) à base de silicium. Le présent document s'applique à la mesure in situ de la résistance à la traction-compression et de la résistance au cisaillement d'une microzone de brasure fabriquée par un processus microélectronique et d'autres technologies de micro-usinage.

Polprevodniški elementi - Mikroelektromehanski elementi - 25. del: Tehnologija proizvodnje MEMS na siliciju - Metoda za merjenje potezno-potisne in strižne trdnosti mikro spojnih mest (IEC 62047-25:2016)

Ta del standarda IEC 62047 določa preskusno metodo na mestu uporabe za merjenje spojne trdnosti mikro spojnega mesta, ki je izdelano z mikromehansko tehnologijo proizvodnje MEMS na siliciju.
Ta dokument se uporablja za merjenje potezno-potisne in strižne trdnosti spojnih mest, ki so izdelana v procesu mikroelektronske in druge mikromehanske tehnologije.
Mikro sidro, pritrjeno na substrat skozi mikro spojno mesto, zagotavlja mehansko podporo premičnih funkcijskih komponent zaznavanja/aktiviranja v napravah MEMS. S spreminjanjem velikosti naprav je spojna moč zaradi napak, onesnaženja in toplotnega neujemanja na spojnem mestu vse manjša. Ta standard določa preskusno metodo na mestu uporabe za potezno-potisno in strižno trdnost na podlagi strukturirane tehnike.
Ta dokument ne zahteva uporabe zapletenih instrumentov (na primer mikroskopije s sondo za skeniranje in nanoindenterjev) in posebne priprave preskusnega primerka.
Ker je preskusno strukturo v tem standardu mogoče vključiti v izdelavo naprave kot standardni vzorec odkrivanja, je ta dokument lahko most, prek katerega oblikovalec iz proizvodnega obrata dobi kvantitativno referenco.

General Information

• Status: Published
• Publication Date: 29-Jan-2017
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 23-Nov-2016
• Due Date: 28-Jan-2017
• Completion Date: 30-Jan-2017
• Ref Project: EN 62047-25:2016 - Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN 62047-25:2017
01-marec-2017
Polprevodniški elementi - Mikroelektromehanski elementi - 25. del: Tehnologija
proizvodnje MEMS na siliciju - Metoda za merjenje potezno-potisne in strižne
trdnosti mikro spojnih mest (IEC 62047-25:2016)
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon-based
MEMS fabrication technology - Measurement method of pull-press and shearing strength
of micro bonding area (IEC 62047-25:2016)
Ta slovenski standard je istoveten z: EN 62047-25:2016
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 62047-25:2017 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 62047-25:2017

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SIST EN 62047-25:2017


EUROPEAN STANDARD EN 62047-25

NORME EUROPÉENNE

EUROPÄISCHE NORM
November 2016
ICS 31.080.99

English Version
Semiconductor devices - Micro-electromechanical devices -
Part 25: Silicon based MEMS fabrication technology -
Measurement method of pull-press and shearing strength of
micro bonding area
(IEC 62047-25:2016)
Dispositifs à semiconducteurs - Dispositifs Halbleiterbauelemente - Bauelemente der
microélectromécaniques - Partie 25: Technologie de Mikrosystemtechnik - Teil 25: Siliziumbasierte MEMS-
fabrication de MEMS à base de silicium - Méthode de Herstellungstechnologie - Messverfahren zur Zug-Druck-
mesure de la résistance à la traction-compression et au und Scherfestigkeit gebondeter Flächen im
cisaillement d'une micro zone de brasure Mikrometerbereich
(IEC 62047-25:2016) (IEC 62047-25:2016)
This European Standard was approved by CENELEC on 2016-10-03. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN 62047-25:2016 E

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SIST EN 62047-25:2017
EN 62047-25:2016
European foreword
The text of document 47F/249/FDIS, future edition 1 of IEC 62047-25, prepared by SC 47F
“Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices" was submitted to the IEC-
CENELEC parallel vote and approved by CENELEC as EN 62047-25:2016.

The following dates are fixed:
(dop) 2017-07-03
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2019-10-03
standards conflicting with the
document have to be withdrawn

Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.

Endorsement notice
The text of the International Standard IEC 62047-25:2016 was approved by CENELEC as a European
Standard without any modification.
2

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SIST EN 62047-25:2017
EN 62047-25:2016
Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications

The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.

NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.

NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu

Publication Year Title EN/HD Year

IEC 62047-1 -  Semiconductor devices - Micro- EN 62047-1 -
electromechanical devices -
Part 1: Terms and definitions
ISO 10012 -  Measurement management systems - EN ISO 10012 -
Requirements for measurement processes
and measuring equipment

3

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SIST EN 62047-25:2017

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SIST EN 62047-25:2017




IEC 62047-25

®


Edition 1.0 2016-08




INTERNATIONAL



STANDARD




NORME



INTERNATIONALE
colour

inside










Semiconductor devices – Micro-electromechanical devices –

Part 25: Silicon based MEMS fabrication technology – Measurement method of

pull-press and shearing strength of micro bonding area




Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 25: Technologie de fabrication de MEMS à base de silicium – Méthode de


mesure de la résistance à la traction-compression et au cisaillement d'une

micro zone de brasure












INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE


INTERNATIONALE




ICS 31.080.99 ISBN 978-2-8322-3609-3



Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN 62047-25:2017
– 2 – IEC 62047-25:2016 © IEC 2016
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references. 6
3 Terms and definitions . 6
4 Requirements . 7
4.1 Testing structure design requirements . 7
4.2 Testing structure fabrication requirements . 9
4.3 Testing environment requirements . 9
5 Testing method . 9
5.1 General . 9
5.2 Pull-press testing method . 9
5.2.1 Imposing the loading force . 9
5.2.2 Pull-press testing method operation process . 9
5.2.3 Pull-press testing method result process . 10
5.3 Shearing testing method . 10
5.3.1 Shearing testing method operation process . 10
5.3.2 Shearing testing method result process . 12
Annex A (informative) Dimensions for testing structure and tensile/compressive
strength . 13
A.1 Dimensions for testing structure . 13
A.2 Tensile strength and compressive strength . 13
Annex B (informative) Pull-press testing method example . 21
B.1 Dimensions for testing structure . 21
B.2 Tensile strength and compressive strength . 21

Figure 1 − Pull-press testing structure . 7
Figure 2 − Shearing testing structure . 8
Figure 3 − Pull-press testing method operation process . 10
Figure 4 − Shearing testing method operation process . 11

Table 1 – Dimensions for shearing testing structure . 12
Table A.1 – Dimensions for testing structure . 13
Table A.2 – Tensile strength and compressive strength (bonding area: 10 µm × 10 µm) . 13
Table A.3 – Tensile strength and compressive strength (bonding area: 20 µm × 20 µm) . 14
Table A.4 – Tensile strength and compressive strength (bonding area: 30 µm × 30 µm) . 14
Table A.5 – Tensile strength and compressive strength (bonding area: 40 µm × 40 µm) . 15
Table A.6 – Tensile strength and compressive strength (bonding area: 50 µm × 50 µm) . 15
Table A.7 – Tensile strength and compressive strength (bonding area: 60 µm × 60 µm) . 15
Table A.8 – Tensile strength and compressive strength (bonding area: 70 µm × 70 µm) . 16
Table A.9 – Tensile strength and compressive strength (bonding area: 80 µm × 80 µm) . 16
Table A.10 – Tensile strength and compressive strength (bonding area:
90 µm × 90 µm) . 17
Table A.11 – Tensile strength and compressive strength (bonding area:
100 µm × 100 µm) . 17

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SIST EN 62047-25:2017
IEC 62047-25:2016 © IEC 2016 – 3 –
Table A.12 – Tensile strength and compressive strength (bonding area:
110 µm × 110 µm) . 18
Table A.13 – Tensile strength and compressive strength (bonding area:
120 µm × 120 µm) . 18
Table A.14 – Tensile strength and compressive strength (bonding area:
130 µm × 130 µm) . 19
Table A.15 – Tensile strength and compressive strength (bonding area:
140 µm × 140 µm) . 19
Table A.16 – Tensile strength and compressive strength (bonding area:
150 µm × 150 µm) . 20
Table B.1 – Dimensions for testing structure . 21
Table B.2 – Tensile strength and compressive strength (bonding area:
110 µm × 110 µm) . 21

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SIST EN 62047-25:2017
– 4 – IEC 62047-25:2016 © IEC 2016
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 25: Silicon based MEMS fabrication technology – Measurement
method of pull-press and shearing strength of micro bonding area

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-25 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47F/249/FDIS 47F/252/RVD

Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

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SIST EN 62047-25:2017
IEC 62047-25:2016 © IEC 2016 – 5 –
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC website under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.

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SIST EN 62047-25:2017
– 6 – IEC 62047-25:2016 © IEC 2016
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 25: Silicon based MEMS fabrication technology – Measurement
method of pull-press and shearing strength of micro bonding area



1 Scope
This part of IEC 62047 specifies the in-situ testing method to measure the bonding strength of
micro bonding area which is fabricated by micromachining technologies used in silicon-based
micro-electromechanical system (MEMS).
This document is applicable to the in-situ pull-press and shearing strength measurement of
the micro bonding area fabricated by microelectronic technology process and other
micromachining technology.
Micro anchor, fixed on the substrate through the micro bonding area, provides mechanical
support of the movable sensing/actuating functional components in MEMS devices. With the
devices scaling, the bonding strength degradation, induced by defects, contaminations and
thermal mismatch stress on bonding surface, becomes severer. This standard specifies an in-
situ testing method of the pull-press and shearing strength based on a patterned technique.
This document does not need intricate instruments (such as scanning probe microscopy and
nanoindenter) and to prepare the test specimen specially.
Since the testing structure in this standard can be implanted in device fabrication as a
standard detection pattern, this document can provide a bridge, by which the fabrication
foundry can give some quantitat
...