SIST EN 150012:2002

Blank Detail Specification: Single gate field-effect transistors

D114/033: Withdrawn

Vordruck für Bauartspezifikation: Feldeffekt-Transistoren mit einer Gate-Elektrode

Spécification particulière cadre: Transistors à effet du champ à grille unique

Blank detail specification: Single gate field-effect transistors

General Information

• Status: Withdrawn
• Publication Date: 31-Aug-2002
• Withdrawal Date: 20-Oct-2009
• ICS: 31.080.30 - Transistors
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 9900 - Withdrawal (Adopted Project)
• Start Date: 19-Oct-2009
• Due Date: 11-Nov-2009
• Completion Date: 21-Oct-2009
• Ref Project: EN 150012:1991 - Blank Detail Specification: Single gate field-effect transistors

Standards Content (Sample)

2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Blank detail specification: Single gate field-effect transistorsVordruck für Bauartspezifikation: Feldeffekt-Transistoren mit einer Gate-ElektrodeSpécification particulière cadre: Transistors à effet du champ à grille uniqueBlank Detail Specification: Single gate field-effect transistors31.080.30TranzistorjiTransistorsICS:Ta slovenski standard je istoveten z:EN 150012:1991SIST EN 150012:2002en01-september-2002SIST EN 150012:2002SLOVENSKI
STANDARD



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



SIST EN 150012:2002



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