SIST EN 62373:2007

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).

Stabilitätsprüfung unter Temperatur-Spannungs-Beanspruchung für Feldeffekttransistoren mit Metalloxid-Halbleiter (MOSFET)

Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)

Fournit une procédure d'essai pour la stabilité de température en polarisation (essai BT) des MOSFET (transistor à effet de champ métaloxyde-semiconducteurs)

Preskušanje ravnotežne temperaturne stabilnosti za kovinsko-oksidne polprevodniške tranzistorje na poljski efekt (MOSFET) (IEC 62373:2006)

General Information

• Status: Published
• Publication Date: 31-Dec-2006
• ICS: 31.080.30 - Transistors
• Technical Committee: SS EIT - Technical Board for the electrotechnical, information technology and telecommunications fields
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 01-Jan-2007
• Due Date: 01-Jan-2007
• Completion Date: 01-Jan-2007
• Ref Project: EN 62373:2006 - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Standards Content (Sample)

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EUROPEAN STANDARD
EN 62373

NORME EUROPÉENNE
August 2006
EUROPÄISCHE NORM

ICS 31.080


English version


Bias-temperature stability test for
metal-oxide, semiconductor, field-effect transistors
(MOSFET)
(IEC 62373:2006)


Essai de stabilité de température en Stabilitätsprüfung unter
polarisation pour transistors à effet de Temperatur-Spannungs-Beanspruchung
champ métal-oxyde-semiconducteur für Feldeffekttransistoren mit
(MOSFET) Metalloxid-Halbleiter (MOSFET)
(CEI 62373:2006) (IEC 62373:2006)




This European Standard was approved by CENELEC on 2006-08-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,
Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels


© 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62373:2006 E

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EN 62373:2006 - 2 -
Foreword
The text of document 47/1862/FDIS, future edition 1 of IEC 62373, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62373 on 2006-08-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2007-05-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2009-08-01
__________
Endorsement notice
The text of the International Standard IEC 62373:2006 was approved by CENELEC as a European
Standard without any modification.
__________

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NORME CEI
INTERNATIONALE
IEC



62373
INTERNATIONAL


Première édition
STANDARD

First edition

2006-07


Essai de stabilité de température en polarisation
pour transistors à effet de champ métal-oxyde-
semiconducteur (MOSFET)
Bias-temperature stability test for metal-oxide,
semiconductor, field-effect transistors (MOSFET)

 IEC 2006 Droits de reproduction réservés  Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: [phone] Telefax: [phone] E-mail: [e-mail] Web: www.iec.ch
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Pour prix, voir catalogue en vigueur
For price, see current catalogue

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62373  IEC:2006 – 3 –
CONTENTS
FOREWORD.5
INTRODUCTION.9

1 Scope.11
2 Terms and definitions .11
3 Test equipment.15
3.1 Equipment.15
3.2 Requirement for handling .15
4 Test sample.17
4.1 Sample.17
4.2 Packaging .17
4.3 ESD protection circuit.17
5 Procedure .19
5.1 Initial measurement and read point measurement.19
5.2 Test.19
5.3 Notes for field MOSFET .21
5.4 Judgment .23

Annex A (informative) Wafer level reliability test (WLR test).25

Bibliography.27

Figure 1 – V -I curve to explain V .13
GS DS th-ex
Figure 2 – Connection between MOSFET electrodes and external terminals .17
Figure 3 – Example of ESD protection circuit .19
Figure 4 – MOSFET BT test circuit (Nch) .21

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62373  IEC:2006 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE,
SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)


FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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International Standard IEC 62373 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/1862/FDIS 47/1875/RVD

Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

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62373  IEC:2006 – 7 –
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.

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62373  IEC:2006 – 9 –
INTRODUCTION
Under the stress of high temperature, and when high gate-source voltage is applied over a
long period of time, MOSFET degrades; saturation current decreases and the absolute value
of threshold voltage increases.
Known causes of degradation include mobile ion contamination, charge damage and the
creation of interface traps at SiO /Si interface or fixed charge by the carrier flow into the oxide.
2

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62373  IEC:2006 – 11 –
BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE,
SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)


1 Scope
This International Standard provides a test procedure for a bias-temperature (BT) stability test
of metal-oxide semiconductor, field-eff
...