ASTM E673-02b

Standard Terminology Relating to Surface Analysis

SCOPE
1.1 This terminology is related to the various disciplines involved in surface analysis.
1.2 The definitions listed apply to (a) Auger electron spectroscopy (AES), (b) X-ray photoelectron spectroscopy (XPS), (c) ion-scattering spectroscopy (ISS), (d) secondary ion mass spectrometry (SIMS), and (e) energetic ion analysis (EIA).

General Information

• Status: Historical
• Publication Date: 09-Dec-2002
• ICS: 01.040.17 - Metrology and measurement. Physical phenomena (Vocabularies)
• ICS: 17.040.20 - Properties of surfaces
• Technical Committee: E42 - Surface Analysis
• Drafting Committee: E42.02 - Terminology

Relations

• Replaced By: ASTM E673-03 - Standard Terminology Relating to Surface Analysis (Withdrawn 2012)
• Effective Date: 01-Dec-2003

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation:E673–02b
Standard Terminology Relating to
1
Surface Analysis
This standard is issued under the fixed designation E673; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (ε) indicates an editorial change since the last revision or reapproval.
1. Scope analysis area (specimen)—two-dimensional region of a
specimen surface measured in the plane of that surface from
1.1 This terminology is related to the various disciplines
whichtheentireanalyticalsignaloraspecifiedpercentageof
involved in surface analysis.
that signal is detected.
1.2 The definitions listed apply to ( a) Auger electron
analyzer transmission— see spectrometer transmission.
spectroscopy (AES), (b) X-ray photoelectron spectroscopy
angle:
(XPS),(c)ion-scatteringspectroscopy(ISS),(d)secondaryion
collection—SIMS, the angle between the normal to the
mass spectrometry (SIMS), and (e) energetic ion analysis
original specimen surface and the axis of the secondary ion
(EIA).
collection optics.
2. Abbreviations
of detector—EIA, SIMS, the angle between the incident
2.1 Abbreviations commonly used in surface analysis are as beamdirectionandthedirectionpointingfromthebeamspot
to the center of the detector.
follows:
of emission—AES, XPS, the angle of emission or ejection of
AES Auger electron spectroscopy
BS backscattering spectroscopy
electrons from a solid measured relative to the normal to the
CHA concentric hemispherical analyzer
surface.
CMA cylindrical mirror analyzer
of incidence— the angle between the incident beam and the
EIA energetic ion analysis
eV electron-volts
normal to the surface.
ESCA electron spectroscopy for chemical analysis
of scattering—EIA, the angle between the incident beam
FABMS fast atom bombardment mass spectrometry
direction and the direction in which a particle is traveling
FWHM full width at half maximum peak height
ISS ion scattering spectroscopy
after it is scattered. If the particle is incident on the detector,
pp peak-to-peak
this angle will be the same as angle of detector.
RBS Rutherford backscattering spectroscopy
solid, of detector—EIA, the solid angle intercepted by the
RFA retarding field analyzer
SAM scanning Auger microprobe
detector, with the radius originating at the beam spot.
SIMS secondary ion mass spectrometry
takeoff—AES, XPS the angle at which particles leave a
SNMS sputtered neutral mass spectrometry
specimen measured relative to the plane of the specimen
XPS X-ray photoelectron spectroscopy
surface. (see angle of emission).
3. Terminology Definitions
angle lapping—a method of specimen preparation in which a
adventitious carbon referencing— XPS, determining the
specimen is mechanically polished at an angle so that
chargingpotentialofaparticularspecimenbycomparingthe changes in composition as a function of position, usually
experimentally determined binding energy of the C 1s
depth, can be more easily determined.
binding energy from absorbed hydrocarbon on the specimen angle resolved AES—the recording ofAuger electron spectra
with a standard binding energy value.
as a function of angle emission.
angular distribution of secondary ions—see secondary ions.
NOTE 1—Anominalvalueof285.0isoftenusedforthebindingenergy
attenuation coefficient—for a parallel beam of specified
of the relevant C 1s peak, although some analysts prefer specific values in
particlesorradiation,thequantityµintheexpressionµ∆xfor
the range 284.6 eV to 285.2 eV depending on the nature of the substrate.
the fraction removed in passing through a thin layer ∆x of a
analysis:
substance in the limit as ∆ x approaches zero, where ∆x is
measured in the direction of the beam.
Auger:
1
ThisterminologyisunderthejurisdictionofASTMCommitteeE42onSurface
analysis volume—see volume under analysis.
Analysis and is the direct responsibility of Subcommittee E42.02 on Terminology.
chemical effects—AES, see chemical.
Current edition approved December 10, 2002. Published June 2003. Originally
published in 1979. Last previous edition approved in 2002 as E673–02a. chemical shift—AES, see chemical.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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E673–02b
current—the electron current due to the emission of Auger Auger processes (such as, multiple initial ionizations and
electrons. additional electronic excitations) can be designated by sepa-
electron—an electron emitted as the result of an Auger rating the initial and final states by a dash (for example,
process. LL-VV and K-VVV). When an Auger process involves an
electron yield— the probability that an atom with a vacancy electron from the same principal
...