ASTM F42-02

Standard Test Methods for Conductivity Type of Extrinsic Semiconducting Materials (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 These test methods cover the determination of the conductivity type of extrinsic semiconductors. While explicit details are given for germanium and silicon, inclusion of other extrinsic materials such as gallium arsenide and indium antimonide should be feasible. For the latter compounds, however, applicability has not been formally verified by round-robin tests. Determinations can be made most reliably on homogeneous bulk material, but these test methods may also be used to map regions of different conductivity type on the surfaces of inhomogeneous specimens. These test methods have not been tested on layered structures such as epitaxial layers. Measurements on these structures may give erroneous indications of conductivity type.
1.2 Four test methods are described:
1.2.1 Test Method A—Hot-Probe Thermal EMF Conductivity-Type Test.
1.2.2 Test Method B—Cold-Probe Thermal EMF Conductivity-Type Test.
1.2.3 Test Method C—Point-Contact Rectification Conductivity-Type Test.
1.2.4 Test Method D—Type-All system operating in two modes:
1.2.4.1 Rectification Conductivity-Type Test.
1.2.4.2 Thermal EMF Conductivity-Type Test.
1.3 Experience has shown that Test Method A (hot-probe) gives dependable results in n- and  p-type silicon having a room-temperature resistivity up to 1000 Ω·cm. Resistivity of germanium specimens may be measured in accordance with Test Methods F 43 and resistivity of silicon slices may be measured in accordance with Test Methods F 43 or Test Method F 84.
1.4 Test Method B (cold-probe) gives dependable results for n- and p-type germanium having a room-temperature resistivity of 20 Ω·cm or less and for n- and p-type silicon having a resistivity up to 1000 Ω ·cm (Note 1). This technique has the advantage over the hot-probe test method in that the signal amplitude can be increased by developing a greater temperature difference between the two probes.
1.5 Test Method C (rectification) is a simple convenient technique which gives dependable results for n- and p-type silicon with room-temperature resistivity between 1 and 1000 Ω ·cm. This test method is not recommended for germanium (Note 1).
1.6 Test Method D (type-all rectification mode) is appropriate for use on n- and  p-type silicon having a room-temperature resistivity between 0.1 and 1000 Ω ·cm, inclusive (Note 1).
1.7 Test Method D (type-all thermal emf mode) is appropriate for use on n- and p-type silicon having a room-temperature resistivity between 0.002 and 0.1 Ω ·cm, inclusive (Note 1).
1.8 These test methods may apply outside the limits given above, but their suitability outside these limits has not been verified experimentally.
1.9 It is recommended that if satisfactory results can not be obtained with the use of these test methods that conductivity type be determined from Hall-effect measurements as described in Test Methods F 76.
Note 2—DIN50432 covers technical equivalents to Test Methods A and C of these test methods, but does not include Test Methods B and D.
1.10 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Withdrawn
• Publication Date: 09-Dec-2002
• Withdrawal Date: 09-May-2003
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F42-93(1997) - Standard Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
• Effective Date: 10-Dec-2002

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
DIN 50432
Designation: F 42 – 02
Standard Test Methods for
1
Conductivity Type of Extrinsic Semiconducting Materials
This standard is issued under the fixed designation F 42; the number immediately following the designation indicates the year of original
adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A superscript
epsilon (e) indicates an editorial change since the last revision or reapproval.
accordance with Test Methods F 43 and resistivity of silicon slices may be
1. Scope
measured in accordance with Test Methods F 43 or Test Method F 84.
2
1.1 These test methods cover the determination of the
1.4 Test Method B (cold-probe) gives dependable results for
conductivity type of extrinsic semiconductors. While explicit
n- and p-type germanium having a room-temperature resistiv-
details are given for germanium and silicon, inclusion of other
ity of 20 V·cm or less and for n- and p-type silicon having a
extrinsic materials such as gallium arsenide and indium anti-
resistivity up to 1000 V·cm (Note 1). This technique has the
monide should be feasible. For the latter compounds, however,
advantage over the hot-probe test method in that the signal
applicability has not been formally verified by round-robin
amplitude can be increased by developing a greater tempera-
tests. Determinations can be made most reliably on homoge-
ture difference between the two probes.
neous bulk material, but these test methods may also be used to
1.5 Test Method C (rectification) is a simple convenient
map regions of different conductivity type on the surfaces of
technique which gives dependable results for n- and p-type
inhomogeneous specimens. These test methods have not been
silicon with room-temperature resistivity between 1 and 1000
tested on layered structures such as epitaxial layers. Measure-
V·cm. This test method is not recommended for germanium
ments on these structures may give erroneous indications of
(Note 1).
conductivity type.
1.6 Test Method D (type-all rectification mode) is appropri-
1.2 Four test methods are described:
ate for use on n- and p-type silicon having a room-temperature
1.2.1 Test Method A—Hot-Probe Thermal EMF
resistivity between 0.1 and 1000 V·cm, inclusive (Note 1).
Conductivity-Type Test.
1.7 Test Method D (type-all thermal emf mode) is appro-
1.2.2 Test Method B—Cold-Probe Thermal EMF
priate for use on n- and p-type silicon having a room-
Conductivity-Type Test.
temperature resistivity between 0.002 and 0.1 V·cm, inclusive
1.2.3 Test Method C—Point-Contact Rectification
(Note 1).
Conductivity-Type Test.
3
1.8 These test methods may apply outside the limits given
1.2.4 Test Method D—Type-All system operating in two
above, but their suitability outside these limits has not been
modes:
verified experimentally.
1.2.4.1 Rectification Conductivity-Type Test.
1.9 It is recommended that if satisfactory results can not be
1.2.4.2 Thermal EMF Conductivity-Type Test.
obtained with the use of these test methods that conductivity
1.3 Experience has shown that Test Method A (hot-probe)
type be determined from Hall-effect measurements as de-
gives dependable results in n- and p-type silicon having a
scribed in Test Methods F 76.
room-temperature resistivity up to 1000 V·cm.
NOTE 2—DIN 50432 covers technical equivalents to Test Methods A
NOTE 1—Resistivity of germanium specimens may be measured in
and C of these test methods, but does not include Test Methods B and D.
1.10 This standard does not purport to address all of the
1
These test methods are under the jurisdiction of ASTM Committee F01 on
safety concerns, if any, associated with its use. It is the
Electronics, and are the direct responsibility of Subcommittee F01.06 on Silicon
responsibility of the user of this standard to establish appro-
Materials and Process Control.
Current edition approved Dec. 10, 2002. Published February 2003. Originally priate safety and health practices and determine the applica-
approved in 1964 as F 42–64T. Last previous edition approved in 1993 as F 42 – 93
bility of regulatory limitations prior to use.
(1997).
2
DIN 50432 is an equivalent method. It is the responsibility of DIN Committee
2. Referenced Documents
NMP 221, with which Committee F-1 maintains close technical liaison.
DIN 50432, Testing of Inorganic Semiconductor Materials: Determining the 2.1 ASTM Standards:
Conductivity Type of Silicon or Germanium by Means of the Rectification Test or
D 5127 Guide for Ultra Pure Water Used in the Electronics
Hot Probe, is available from Beuth Verlag GmbH, Burggrafenstrasse 4-10, D-1000
4
and Semiconductor Industry
Berlin 30, Federal Republic of Germany.
3
Keenan, W. A., Schneider, C. P., and Pillus, C. A., “Type-All System for
Determining Semiconductor Conductivity Type,” Solid State Technology,
...