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ASTM E722-04

(Practice)

Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

SCOPE
1.1 This practice covers procedures for characterizing a neutron fluence from a source in terms of an equivalent monoenergetic neutron fluence. It is applicable to neutron effects testing, to the development of test specifications, and to the characterization of neutron test environments. The sources may have a broad neutron-energy spectrum, or may be mono-energetic neutron sources with energies up to 20 MeV. The relevant equivalence is in terms of a specified effect on certain physical properties of materials upon which the source spectrum is incident. In order to achieve this, knowledge of the effects of neutrons as a function of energy on the specific property of the material of interest is required. Sharp variations in the effects with neutron energy may limit the usefulness of this practice in the case of mono-energetic sources.
1.2 This practice is presented in a manner to be of general application to a variety of materials and sources. Correlation between displacements () caused by different particles (electrons, neutrons, protons, and heavy ions) is beyond the scope of this practice. In radiation-hardness testing of electronic semiconductor devices, specific materials of interest include silicon and gallium arsenide, and the neutron sources generally are test and research reactors and californium-252 irradiators.
1.3 The technique involved relies on the following factors: (1) a detailed determination of the energy spectrum of the neutron source, and (2) a knowledge of the degradation (damage) effects of neutrons as a function of energy on specific material properties.
1.4 The detailed determination of the neutron energy spectrum referred to in need not be performed afresh for each test exposure, provided the exposure conditions are repeatable. When the spectrum determination is not repeated, a neutron fluence monitor shall be used for each test exposure.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

Status
Historical
Publication Date
31-May-2004
ICS
31.080.01 - Semiconductor devices in general
Technical Committee
E10 - Nuclear Technology and Applications
Drafting Committee
E10.07 - Radiation Dosimetry for Radiation Effects on Materials and Devices
Current Stage
Ref Project

Relations

Replaces
ASTM E722-94(2002) - Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
Effective Date
01-Jun-2004
Replaced By
ASTM E722-04e1 - Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
Effective Date
01-Jun-2004
Referred By
ASTM E3084-17(2022)e1 - Standard Practice for Characterizing Particle Irradiations of Materials in Terms of Non-Ionizing Energy Loss (NIEL)
Effective Date
01-Jun-2004
Referred By
ASTM E170-23 - Standard Terminology Relating to Radiation Measurements and Dosimetry
Effective Date
01-Jun-2004
Referred By
ASTM E1854-19 - Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
Effective Date
01-Jun-2004
Referred By
ASTM F980-16 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
Effective Date
01-Jun-2004
Referred By
ASTM E721-22 - Standard Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
Effective Date
01-Jun-2004
Referred By
ASTM E2450-23 - Standard Practice for Application of CaF<inf>2</inf>(Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments
Effective Date
01-Jun-2004
Referred By
ASTM E261-16(2021) - Standard Practice for Determining Neutron Fluence, Fluence Rate, and Spectra by Radioactivation Techniques
Effective Date
01-Jun-2004
Referred By
ASTM E1855-20 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Effective Date
01-Jun-2004
Referred By
ASTM F1190-18 - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
Effective Date
01-Jun-2004

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ASTM E722-04 - Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of ElectronicsASTM E722-04 - Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
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ASTM E722-04 - Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
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Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
e1
Designation:E722–04
Standard Practice for
Characterizing Neutron Energy Fluence Spectra in Terms of
an Equivalent Monoenergetic Neutron Fluence for
1
Radiation-Hardness Testing of Electronics
This standard is issued under the fixed designation E722; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
This standard has been approved for use by agencies of the Department of Defense.
1
e NOTE—Table A1.1 abd A1.2 were corrected editorially in February 2005.
1. Scope neutron source, and (2) a knowledge of the degradation
(damage)effectsofneutronsasafunctionofenergyonspecific
1.1 This practice covers procedures for characterizing a
material properties.
neutron fluence from a source in terms of an equivalent
1.4 The detailed determination of the neutron energy spec-
monoenergetic neutron fluence. It is applicable to neutron
trum referred to in 1.3 need not be performed afresh for each
effects testing, to the development of test specifications, and to
testexposure,providedtheexposureconditionsarerepeatable.
the characterization of neutron test environments. The sources
When the spectrum determination is not repeated, a neutron
may have a broad neutron-energy spectrum, or may be mono-
fluence monitor shall be used for each test exposure.
energetic neutron sources with energies up to 20 MeV. This
1.5 This standard does not purport to address all of the
practice is not applicable in cases where the predominant
safety concerns, if any, associated with its use. It is the
sourceofdisplacementdamageisfromneutronsofenergyless
responsibility of the user of this standard to establish appro-
than10keV.Therelevantequivalenceisintermsofaspecified
priate safety and health practices and determine the applica-
effect on certain physical properties of materials upon which
bility of regulatory limitations prior to use.
the source spectrum is incident. In order to achieve this,
knowledgeoftheeffectsofneutronsasafunctionofenergyon
2. Referenced Documents
the specific property of the material of interest is required.
3
2.1 ASTM Standards:
Sharp variations in the effects with neutron energy may limit
E265 Test Method for Measuring Reaction Rates for Fast-
the usefulness of this practice in the case of mono-energetic
Neutron Fluences by Radioactivation of Sulfur-32
sources.
E693 Practice for Characterizing Neutron Exposures in
1.2 This practice is presented in a manner to be of general
Ferritic Steels in Terms of Displacement per Atom (DPA)
application to a variety of materials and sources. Correlation
2 E720 Guide for Selection and Use of Neutron-Activation
between displacements (1-3) caused by different particles
Foils for Determining Neutron Spectra Employed in
(electrons, neutrons, protons, and heavy ions) is beyond the
Radiation-Hardness Testing of Electronics
scope of this practice. In radiation-hardness testing of elec-
E721 Test Method for Determining Neutron Energy Spec-
tronic semiconductor devices, specific materials of interest
tra with Neutron Activation Foils for Radiation-Hardness
include silicon and gallium arsenide, and the neutron sources
Testing of Electronics
generally are test and research reactors and californium-252
E844 Guide for Sensor Set Design and Irradiation for
irradiators.
Reactor Surveillance, E706 (IIC)
1.3 The technique involved relies on the following factors:
E944 Practice for Applications of Neutron Spectrum Ad-
(1) a detailed determination of the energy spectrum of the
justment Methods in Reactor Surveillance, (IIA)
2.2 International Commission on Radiation Units and
1
Measurements (ICRU) Reports:
This practice is under the jurisdiction of ASTM Committee E10 on Nuclear
Technology and Applications and is the direct responsibility of Subcommittee
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices.
3
CurrenteditionapprovedJune1,2004.PublishedJuly2004.Originallyapproved For referenced ASTM standards, visit the ASTM website, www.astm.org, or
in 1980. Last previous edition approved in 2002 as E722–94(2002). contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
2
The boldface numbers in parentheses refer to a list of references at the end of Standards volume information, refer to the standard’s Document Summary page on
this practice. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

---------------------- Page: 1 ----------------------
e1
E722–04
ICRU Report 13—Neutron Fluence, Neutron Spectra, and current gain degradation in silicon) being correlated is de-
4
Kerma scribed
...

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ASTM E722-19(Practice)
Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

SIGNIFICANCE AND USE
5.1 This practice is important in characterizing the radiation hardness of electronic devices irradiated by neutrons. This characterization makes it feasible to predict some changes in operational properties of irradiated semiconductor devices or electronic systems. To facilitate uniformity of the interpretation and evaluation of results of irradiations by sources of different fluence spectra, it is convenient to reduce the incident neutron fluence from a source to a single parameter—an equivalent monoenergetic neutron fluence—applicable to a particular semiconductor material.  
5.2 In order to determine an equivalent monoenergetic neutron fluence, it is necessary to evaluate the displacement damage of the particular semiconductor material. Ideally, this quantity is correlated to the degradation of a specific functional performance parameter (such as current gain) of the semiconductor device or system being tested. However, this correlation has not been established unequivocally for all device types and performance parameters since, in many instances, other effects also can be important. Ionization effects produced by the incident neutron fluence or by gamma rays in a mixed neutron fluence, short-term and long-term annealing, and other factors can contribute to observed performance degradation (damage). Thus, caution should be exercised in making a correlation between calculated displacement damage and performance degradation of a given electronic device. The types of devices for which this correlation is applicable, and numerical evaluation of displacement damage are discussed in the annexes.  
5.3 The concept of 1-MeV equivalent fluence is widely used in the radiation-hardness testing community. It has merits and disadvantages that have been debated widely  (9-12). For these reasons, specifics of a standard application of the 1-MeV equivalent fluence are presented in the annexes.
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1.1 This practice covers procedures for characterizing neutron fluence from a source in terms of an equivalent monoenergetic neutron fluence. It is applicable to neutron effects testing, to the development of test specifications, and to the characterization of neutron test environments. The sources may have a broad neutron-energy range, or may be mono-energetic neutron sources with energies up to 20 MeV. This practice is not applicable in cases where the predominant source of displacement damage is from neutrons of energy less than 10 keV. The relevant equivalence is in terms of a specified effect on certain physical properties of materials upon which the source spectrum is incident. In order to achieve this, knowledge of the effects of neutrons as a function of energy on the specific property of the material of interest is required. Sharp variations in the effects with neutron energy may limit the usefulness of this practice in the case of mono-energetic sources.  
1.2 This practice is presented in a manner to be of general application to a variety of materials and sources. Correlation between displacements (1-3)2 caused by different particles (electrons, neutrons, protons, and heavy ions) is out of the scope of this practice but is addressed in Practice E3084. In radiation-hardness testing of electronic semiconductor devices, specific materials of interest include silicon and gallium arsenide, and the neutron sources generally are test and research reactors and californium-252 irradiators.  
1.3 The technique involved relies on the following factors: (1) a detailed determination of the fluence spectrum of the neutron source, and (2) a knowledge of the degradation (damage) effects of neutrons as a function of energy on specific material properties.  
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Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

SIGNIFICANCE AND USE
5.1 Many modern integrated circuits, power transistors, and other devices experience SEP when exposed to cosmic rays in interplanetary space, in satellite orbits or during a short passage through trapped radiation belts. It is essential to be able to predict the SEP rate for a specific environment in order to establish proper techniques to counter the effects of such upsets in proposed systems. As the technology moves toward higher density ICs, the problem is likely to become even more acute.  
5.2 This guide is intended to assist experimenters in performing ground tests to yield data enabling SEP predictions to be made.
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1.1 This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy ions having an atomic number Z ≥ 2. This description specifically excludes the effects of neutrons, protons, and other lighter particles that may induce SEP via another mechanism. SEP includes any manifestation of upset induced by a single ion strike, including soft errors (one or more simultaneous reversible bit flips), hard errors (irreversible bit flips), latchup (persistent high conducting state), transients induced in combinatorial devices which may introduce a soft error in nearby circuits, power field effect transistor (FET) burn-out and gate rupture. This test may be considered to be destructive because it often involves the removal of device lids prior to irradiation. Bit flips are usually associated with digital devices and latchup is usually confined to bulk complementary metal oxide semiconductor, (CMOS) devices, but heavy ion induced SEP is also observed in combinatorial logic programmable read only memory, (PROMs), and certain linear devices that may respond to a heavy ion induced charge transient. Power transistors may be tested by the procedure called out in Method 1080 of MIL STD 750.  
1.2 The procedures described here can be used to simulate and predict SEP arising from the natural space environment, including galactic cosmic rays, planetary trapped ions, and solar flares. The techniques do not, however, simulate heavy ion beam effects proposed for military programs. The end product of the test is a plot of the SEP cross section (the number of upsets per unit fluence) as a function of ion LET (linear energy transfer or ionization deposited along the ion's path through the semiconductor). This data can be combined with the system's heavy ion environment to estimate a system upset rate.  
1.3 Although protons can cause SEP, they are not included in this guide. A separate guide addressing proton induced SEP is being considered.  
1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.  
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Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

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5.1 Electronic circuits used in space, military, and nuclear power systems may be exposed to various levels of ionizing radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in such systems.  
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1.5.2 Determination of an Effective Strategy for Minimizing the Effects of Irradiation Dose Rate on the Test Result—The results of radiation testing on some types of devices are relatively insensitive to the dose rate of the radiation applied in the test. In contrast, many MOS devices and some bipolar devices have a significant sensitivity to dose rate. Several different strategies for managing the dose rate sensitivity of test results will be discussed.  
1.5.3 Choice of an Effective Test Methodology—The selection of effective test methodologies will be discussed.  
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SIGNIFICANCE AND USE
5.1 Semiconductor devices can be permanently damaged by neutrons (1, 2)6. The effect of such damage on the performance of an electronic component can be determined by measuring the component’s electrical characteristics before and after exposure to fast neutrons in the neutron fluence range of interest. The resulting data can be utilized in the design of electronic circuits that are tolerant of the degradation exhibited by that component.  
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4.1 Illustrations provided in this guide are intended for use as references to aid in interpreting film or nonfilm images resulting from x-ray examinations (see Table 1) to ascertain quality of assembly and workmanship.  
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Standard Practice for Radiographic Examination of Semiconductors and Electronic Components

SIGNIFICANCE AND USE
4.1 This practice establishes the basic minimum parameters and controls for the application of radiographic examination of electronic devices. Factors such as device handling, equipment, ESDS, materials, personnel qualification, procedure and quality requirements, reporting, records and radiation sensitivity are addressed. This practice is written so it can be specified on the engineering drawing, specification, or contract. It is not a detailed how-to procedure and must be supplemented by a detailed examination technique/procedure (see 10.1).  
4.2 This practice does not set limits on radiation dose but does list requirements to limit and document radiation dose to devices. When radiation dose limits are an issue, the requestor of radiographic examinations must be cognizant of this issue and state any maximum radiation dose limitations that are required in the contractual agreement between the using parties.
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1.2 This practice covers the radiographic examination of these items to detect possible defective conditions within the sealed case, especially those resulting from sealing the lid to the case, and internal defects such as extraneous material (foreign objects), improper interconnecting wires, voids in the die attach material or in the glass (when sealing glass is used), solder defects, or physical damage.  
1.3 Basis of Application—There are areas in this practice that may require agreement between the cognizant engineering organization and the supplier, or specific direction from the cognizant engineering organization. These items should be addressed in the purchase order, contract, or inspection technique. Specific applications may require adherence to this practice in part or in full. Deviations from this practice shall be enumerated in inspection plan and approved by both cognizant engineering organization and supplier.  
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ABSTRACT
This specification covers round drawn/extruded gold wires for internal semiconductor device electrical connections. The wires are available in four classifications, namely: copper-modified wire, beryllium-modified wire, high-strength wire, and special purpose wire. Aptly sampled wires shall be examined by test methods suggested herein, and each class shall conform correspondingly to specified requirements for chemical composition, mechanical properties (breaking load and elongation), dimension (diameter and weight), and workmanship and finish. The wires shall also undergo wire curl, wire axial twist, and wire roundness tests.
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1.1 This specification covers round drawn/extruded gold wire for internal semiconductor device electrical connections. Four classifications of wire are distinguished, (1) copper-modified wire, (2) beryllium-modified wire, (3) high-strength wire, and (4) special purpose wire.  
Note 1: Trace metallic elements have a significant effect upon the mechanical properties and thermal stability of high-purity gold wire. It is customary in manufacturing to add controlled amounts of selected impurities to gold to modify or stabilize bonding wire properties, or both. This practice is known variously as “modifying,” “stabilizing,” or “doping.” The first two wire classifications denoted in this specification refer to wire made with either of two particular modifiers, copper or beryllium, in general use. In the third and fourth wire classifications, “high-strength” and “special purpose” wire, the identity of modifying additives is not restricted.  
1.2 The values stated in SI units are to be regarded as standard. The values given in parentheses after SI units are provided for information only and are not considered standard.  
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ASTM E722-19(Practice)
Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

SIGNIFICANCE AND USE
5.1 This practice is important in characterizing the radiation hardness of electronic devices irradiated by neutrons. This characterization makes it feasible to predict some changes in operational properties of irradiated semiconductor devices or electronic systems. To facilitate uniformity of the interpretation and evaluation of results of irradiations by sources of different fluence spectra, it is convenient to reduce the incident neutron fluence from a source to a single parameter—an equivalent monoenergetic neutron fluence—applicable to a particular semiconductor material.  
5.2 In order to determine an equivalent monoenergetic neutron fluence, it is necessary to evaluate the displacement damage of the particular semiconductor material. Ideally, this quantity is correlated to the degradation of a specific functional performance parameter (such as current gain) of the semiconductor device or system being tested. However, this correlation has not been established unequivocally for all device types and performance parameters since, in many instances, other effects also can be important. Ionization effects produced by the incident neutron fluence or by gamma rays in a mixed neutron fluence, short-term and long-term annealing, and other factors can contribute to observed performance degradation (damage). Thus, caution should be exercised in making a correlation between calculated displacement damage and performance degradation of a given electronic device. The types of devices for which this correlation is applicable, and numerical evaluation of displacement damage are discussed in the annexes.  
5.3 The concept of 1-MeV equivalent fluence is widely used in the radiation-hardness testing community. It has merits and disadvantages that have been debated widely  (9-12). For these reasons, specifics of a standard application of the 1-MeV equivalent fluence are presented in the annexes.
SCOPE
1.1 This practice covers procedures for characterizing neutron fluence from a source in terms of an equivalent monoenergetic neutron fluence. It is applicable to neutron effects testing, to the development of test specifications, and to the characterization of neutron test environments. The sources may have a broad neutron-energy range, or may be mono-energetic neutron sources with energies up to 20 MeV. This practice is not applicable in cases where the predominant source of displacement damage is from neutrons of energy less than 10 keV. The relevant equivalence is in terms of a specified effect on certain physical properties of materials upon which the source spectrum is incident. In order to achieve this, knowledge of the effects of neutrons as a function of energy on the specific property of the material of interest is required. Sharp variations in the effects with neutron energy may limit the usefulness of this practice in the case of mono-energetic sources.  
1.2 This practice is presented in a manner to be of general application to a variety of materials and sources. Correlation between displacements (1-3)2 caused by different particles (electrons, neutrons, protons, and heavy ions) is out of the scope of this practice but is addressed in Practice E3084. In radiation-hardness testing of electronic semiconductor devices, specific materials of interest include silicon and gallium arsenide, and the neutron sources generally are test and research reactors and californium-252 irradiators.  
1.3 The technique involved relies on the following factors: (1) a detailed determination of the fluence spectrum of the neutron source, and (2) a knowledge of the degradation (damage) effects of neutrons as a function of energy on specific material properties.  
1.4 The detailed determination of the neutron fluence spectrum referred to in 1.3 need not be performed afresh for each test exposure, provided the exposure conditions are repeatable. When the spectrum determination is not repeated, a neutron fluence monit...

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ASTM
ASTM F1892-12(2018)(Guide)
Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

SIGNIFICANCE AND USE
5.1 Electronic circuits used in space, military, and nuclear power systems may be exposed to various levels of ionizing radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in such systems.  
5.2 Some manufacturers currently are selling semiconductor parts with guaranteed hardness ratings. Use of this guide provides a basis for standardized qualification and acceptance testing.
SCOPE
1.1 This guide presents background and guidelines for establishing an appropriate sequence of tests and data analysis procedures for determining the ionizing radiation (total dose) hardness of microelectronic devices for dose rates below 300 rd(SiO2)/s. These tests and analysis will be appropriate to assist in the determination of the ability of the devices under test to meet specific hardness requirements or to evaluate the parts for use in a range of radiation environments.  
1.2 The methods and guidelines presented will be applicable to characterization, qualification, and lot acceptance of silicon-based MOS and bipolar discrete devices and integrated circuits. They will be appropriate for treatment of the effects of electron and photon irradiation.  
1.3 This guide provides a framework for choosing a test sequence based on general characteristics of the parts to be tested and the radiation hardness requirements or goals for these parts.  
1.4 This guide provides for tradeoffs between minimizing the conservative nature of the testing method and minimizing the required testing effort.  
1.5 Determination of an effective and economical hardness test typically will require several kinds of decisions. A partial enumeration of the decisions that typically must be made is as follows:  
1.5.1 Determination of the Need to Perform Device Characterization—For some cases it may be more appropriate to adopt some kind of worst case testing scheme that does not require device characterization. For other cases it may be most effective to determine the effect of dose-rate on the radiation sensitivity of a device. As necessary, the appropriate level of detail of such a characterization also must be determined.  
1.5.2 Determination of an Effective Strategy for Minimizing the Effects of Irradiation Dose Rate on the Test Result—The results of radiation testing on some types of devices are relatively insensitive to the dose rate of the radiation applied in the test. In contrast, many MOS devices and some bipolar devices have a significant sensitivity to dose rate. Several different strategies for managing the dose rate sensitivity of test results will be discussed.  
1.5.3 Choice of an Effective Test Methodology—The selection of effective test methodologies will be discussed.  
1.6 Low Dose Requirements—Hardness testing of MOS and bipolar microelectronic devices for the purpose of qualification or lot acceptance is not necessary when the required hardness is 100 rd(SiO2) or lower.  
1.7 Sources—This guide will cover effects due to device testing using irradiation from photon sources, such as 60Co γ irradiators,  137Cs γ irradiators, and low energy (approximately 10 keV) X-ray sources. Other sources of test radiation such as linacs, Van de Graaff sources, Dymnamitrons, SEMs, and flash X-ray sources occasionally are used but are outside the scope of this guide.  
1.8 Displacement damage effects are outside the scope of this guide, as well.  
1.9 The values stated in SI units are to be regarded as the standard.  
1.10 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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ASTM F1192-11(2018)(Guide)
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

SIGNIFICANCE AND USE
5.1 Many modern integrated circuits, power transistors, and other devices experience SEP when exposed to cosmic rays in interplanetary space, in satellite orbits or during a short passage through trapped radiation belts. It is essential to be able to predict the SEP rate for a specific environment in order to establish proper techniques to counter the effects of such upsets in proposed systems. As the technology moves toward higher density ICs, the problem is likely to become even more acute.  
5.2 This guide is intended to assist experimenters in performing ground tests to yield data enabling SEP predictions to be made.
SCOPE
1.1 This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy ions having an atomic number Z ≥ 2. This description specifically excludes the effects of neutrons, protons, and other lighter particles that may induce SEP via another mechanism. SEP includes any manifestation of upset induced by a single ion strike, including soft errors (one or more simultaneous reversible bit flips), hard errors (irreversible bit flips), latchup (persistent high conducting state), transients induced in combinatorial devices which may introduce a soft error in nearby circuits, power field effect transistor (FET) burn-out and gate rupture. This test may be considered to be destructive because it often involves the removal of device lids prior to irradiation. Bit flips are usually associated with digital devices and latchup is usually confined to bulk complementary metal oxide semiconductor, (CMOS) devices, but heavy ion induced SEP is also observed in combinatorial logic programmable read only memory, (PROMs), and certain linear devices that may respond to a heavy ion induced charge transient. Power transistors may be tested by the procedure called out in Method 1080 of MIL STD 750.  
1.2 The procedures described here can be used to simulate and predict SEP arising from the natural space environment, including galactic cosmic rays, planetary trapped ions, and solar flares. The techniques do not, however, simulate heavy ion beam effects proposed for military programs. The end product of the test is a plot of the SEP cross section (the number of upsets per unit fluence) as a function of ion LET (linear energy transfer or ionization deposited along the ion's path through the semiconductor). This data can be combined with the system's heavy ion environment to estimate a system upset rate.  
1.3 Although protons can cause SEP, they are not included in this guide. A separate guide addressing proton induced SEP is being considered.  
1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.  
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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