ASTM F533-02

Standard Test Method for Thickness and Thickness Variation of Silicon Wafers

SCOPE
1.1 This test method  covers measurement of the thickness of silicon wafers, polished or unpolished, and estimation of the variation in thickness across the wafer.  
1.2 This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1. However, it can be applied to circular silicon wafers, or substrates of any diameter and thickness that can be handled without breaking.  
1.3 This test method is suitable for both contact and contactless gaging equipment. Precision statements have been established for each.  
1.4 The values stated in inch-pound units are to be regarded as standard. The values in parentheses are for information only.  
1.5  This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 09-Jan-2002
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F533-96 - Standard Test Method for Thickness and Thickness Variation of Silicon Wafers
• Effective Date: 10-Jan-2002
• Replaced By: ASTM F533-02a - Standard Test Method for Thickness and Thickness Variation of Silicon Wafers (Withdrawn 2003)
• Effective Date: 10-Dec-2002

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 533 – 02
Standard Test Method for
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Thickness and Thickness Variation of Silicon Wafers
This standard is issued under the fixed designation F 533; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
INTRODUCTION
When this test method was developed in the 1970s, non-contact thickness gages employing manual
wafer positioning, which are the basis of this test method, were in routine use. More recently, faster,
automated instruments have replaced these manual gages for most common uses in the semiconductor
industry. In these automatic systems, microprocessors or microcomputers are used to control wafer
positioning, operate the instrument and to analyze the data. See Test Method F 1530.
Despite the fact that this test method is not commonly used in its present form, it embodies all the
basic elements of this test method and a simple analysis of data. Thus, it provides useful guidance in
the fundamentals and appplication of differential non-contact wafer thickness measurements.
1. Scope Thickness Variation on Silicon Wafers by Automated
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Noncontact Scanning
1.1 This test method covers measurement of the thickness
2.2 SEMI Standard:
of silicon wafers, polished or unpolished, and estimation of the
Specifications M 1, for Polished Monocrystalline Silicon
variation in thickness across the wafer.
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Wafers
1.2 This test method is intended primarily for use with
2.3 Federal Standards:
wafers that meet the dimension and tolerance requirements of
Fed. Std. No. 209B Clean Room and Work Station Require-
SEMI Specifications M 1. However, it can be applied to
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ments, Controlled Environment
circular silicon, wafers or substrates of any diameter and
Fed. Spec. GGG-G-15C Gage Blocks and Accessories (Inch
thickness that can be handled without breaking.
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and Metric), Nov. 6, 1970
1.3 This test method is suitable for both contact and
contactless gaging equipment. Precision statements have been
3. Terminology
established for each.
3.1 Definitions:
1.4 The values stated in inch-pound units are to be regarded
3.1.1 back surface—of a semiconductor wafer, the exposed
as standard. The values in parentheses are for information only.
surface opposite to that upon which active semiconductor
1.5 This standard does not purport to address all of the
devices have been or will be fabricated.
safety concerns, if any, associated with its use. It is the
3.1.2 front surface—of a semiconductor wafer, the exposed
responsibility of the user of this standard to establish appro-
surface upon which active semiconductor devices have been or
priate safety and health practices and determine the applica-
will be fabricated.
bility of regulatory limitations prior to use.
3.1.3 thickness—of a semiconductor wafer, the distance
2. Referenced Documents through the wafer between corresponding points on the front
and back surfaces.
2.1 ASTM Standards:
3.1.4 total thickness variation, TTV—of a semiconductor
F 1530 Test Method for Measuring Flatness, Thickness and
wafer, the difference between the maximum and minimum
values of the thickness of the wafer.
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This test method is under the jurisdiction of ASTM Committee F01 on
Electronics and is the direct responsibility of Subcommittee F01.06 on Electrical
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and Optical Measurement. Annual Book of ASTM Standards, Vol 10.05.
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Current edition approved Jan. 10, 2002. Published March 2002. Originally Available from Semiconductor Equipment and Materials International, 805
published as F 533 – 77 T. Last previous edition F 533 – 96. East Middlefield Rd., Mountain View, CA 94043.
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DIN 50441/1 is an equivalent method. It is the responsibility of DIN Committee Available from GSA Business Service Centers in Boston, New York, Atlanta,
NMP 221, with which Committee F01 maintains close liaison. DIN 50441/1. Chicago, Kansas City, Mo., Fort Worth, Denver, San Francisco, Los Angeles, and
Determinaton of the Geometric Dimensions of Semiconductor Slices; Measurement Seattle.
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of Thickness, available from Beuth Verlag, Gmbh, Burggrafenstrasse 4-10, D-1000 Available from the Superintendent of Documents, U.S. Government Printing
Berlin 30, Federal Republic of Germany. Office, Washington, DC 20402.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
F 533
4. Summary of Test Method 6. Inferferences
4.1 The thickness of the w
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