ASTM F2113-01(2011)

Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications (Withdrawn 2020)

ABSTRACT
This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials. This standard sets purity grade levels, analytical methods and impurity content reporting method and format. The grade designation is a measure of total metallic impurity content. It does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance. Analysis for trace metallic impurities and gases shall be performed on samples that represent the finished sputtering target. Carbon, oxygen, and sulfur shall be analysed by fusion and gas extraction/infrared spectroscopy. Nitrogen and hydrogen shall be analysed by fusion and gas extraction.
SCOPE
1.1 This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.
1.2 This standard sets purity grade levels, analytical methods and impurity content reporting method and format.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.
WITHDRAWN RATIONALE
This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.
Formerly under the jurisdiction of Committee F01 on Electronics, this guide was withdrawn in January 2020 in accordance with section 10.6.3 of the Regulations Governing ASTM Technical Committees, which requires that standards shall be updated by the end of the eighth year since the last approval date.

General Information

• Status: Withdrawn
• Publication Date: 31-May-2011
• Withdrawal Date: 08-Jan-2020
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.17 - Sputter Metallization

Relations

• Referred By: ASTM F3192-16 - Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization
• Effective Date: 01-Jun-2011

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: F2113 − 01 (Reapproved 2011)
Standard Guide for
Analysis and Reporting the Impurity Content and Grade of
High Purity Metallic Sputtering Targets for Electronic Thin
1
Film Applications
This standard is issued under the fixed designation F2113; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 3.2.1 mdl—minimum detection limit
1.1 This guide covers sputtering targets used as thin film
4. Impurities
source material in fabricating semiconductor electronic de-
4.1 The minimum set of metallic impurity elements to be
vices. It should be used to develop target specifications for
analyzed shall be developed and listed in the target specifica-
specific materials and should be referenced therein.
tion or agreed upon by the purchaser and supplier.
1.2 This standard sets purity grade levels, analytical meth-
4.2 Acceptable analysis methods and detection limits are to
ods and impurity content reporting method and format.
be specified in the target specification. Elements not detected
1.2.1 The grade designation is a measure of total metallic
will be counted and reported as present at the minimum
impurity content. The grade designation does not necessarily
detection limit (“mdl”) for the method used. Additional ele-
indicate suitability for a particular application because factors
ments may be analyzed and reported as agreed upon between
other than total metallic impurity may influence performance.
the purchaser and the supplier, but these elements shall not be
2. Referenced Documents
counted in defining the grade designation.
2
2.1 ASTM Standards:
4.3 Certain elements may present particular analysis
F1593 Test Method for Trace Metallic Impurities in Elec-
problems, such as interferences. The limits, analysis method,
tronic Grade Aluminum by High Mass-Resolution Glow-
and mdl may, in such cases, be as agreed upon between the
Discharge Mass Spectrometer
purchaser and the supplier.
4.4 Nonmetallic elements, which shall be analyzed and
3. Terminology
reported, are carbon, hydrogen, nitrogen, oxygen, and sulfur.
3.1 Definitions of Terms Specific to This Standard:
Maximum limits for nonmetallic impurities shall be agreed
3.1.1 finished product, n—for the purpose of this standard,
upon between the purchaser and the supplier.
a “finished product” is a manufactured sputtering target, ready
4.5 Acceptable limits and analytical techniques for particu-
for use.
lar elements in critical applications may be agreed upon
3.1.2 material lot, n— for the purpose of this standard,a
between the purchaser and the supplier.
“lot” is material consolidated into one ingot, and processed as
one continuous batch in subsequent thermal-mechanical treat-
5. Classification
ments.
5.1 GradesofmetallicsputteringtargetsaredefinedinTable
3.1.3 target specification, n—for the purpose of this
1, based upon total metallic impurity content of the set of
standard, a specification for a sputtering target source material
elements as specified in 4.1. Impurity contents are reported in
for electronic thin film applications.
parts per million by weight (wt ppm).
3.2 Abbreviations:
5.2 Purity grade and total metallic impurity levels are based
upon the set of elements as specified in 4.1.
1
This guide is under the jurisdiction of ASTM Committee F01 on Electronics
and is the direct responsibility of Subcommittee F01.17 on Sputter Metallization.
6. Sampling
Current edition approved June 1, 2011. Published June 2011. Originally
6.1 Analysis for impurities and gases shall be performed on
approved in 2001. Last previous edition approved in 2007 as F2113 - 01 (07). DOI:
10.1520/F2113-01R11.
samples that represent the finished sputtering target.
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
6.1.1 Unless otherwise agreed upon between the purchaser
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
and the supplier, impurity analyses for metallic and nonmetal-
Standards volume information, refer to the standard’s Document Summary page on
the ASTM website. lic impurities shall be made by the supplier for one or more
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F2113 − 01 (2011)
TABLE 1 Metallic Sputtering Target Grades
7.1.4 Hydrogen—By fusion and gas extraction with mdl
Grade Purity, % Maximum Total Metallic Impurity Content, wt ppm typically ≤ 3 weight ppm.
3N5 99.95 500 7.1.5 Other analytical techniques may be used provided
4N 99.99 100
they can be proved equivalent to the methods spec
...