ASTM F1725-02

Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and defect counting.
1.2 This practice is suitable for use if evaluating silicon grown in either [111] or [100] direction and doped either  p or n type with resistivity greater than 0.005 Ωcm.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Withdrawn
• Publication Date: 09-Dec-2002
• Withdrawal Date: 09-May-2003
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F1725-97 - Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots
• Effective Date: 10-Dec-2002

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 1725 – 02
Standard Guide for
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Analysis of Crystallographic Perfection of Silicon Ingots
This standard is issued under the fixed designation F 1725; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope 4. Summary of Practice
1.1 This practice covers the analysis of the crystallographic 4.1 The end portion of the silicon crystal, which solidified
perfection in silicon ingots. The steps described are sample last, may contain dislocations or other defects such as slip. The
preparation, etching solution selection and use, defect identi- portion containing the defects is removed by sawing the
fication, and defect counting. crystal. A specimen wafer from the end of the remaining ingot
1.2 This practice is suitable for use if evaluating silicon is obtained with a second cut.
grown in either [111] or [100] direction and doped either p or 4.2 This wafer is mechanically lapped, chemically polished,
n type with resistivity greater than 0.005 Vcm. and then etched in a preferential defect etching solution.
1.3 This standard does not purport to address all of the 4.3 The etched surface is examined under bright light
safety concerns, if any, associated with its use. It is the illumination and examined microscopically to count and clas-
responsibility of the user of this standard to establish appro- sify the imperfections highlighted by the preferential defect
priate safety and health practices and determine the applica- etching solution.
bility of regulatory limitations prior to use.
5. Significance and Use
2. Referenced Documents
5.1 The use of silicon wafers in many semiconductor
2.1 ASTM Standards: devices requires a consistent atomic lattice structure. Crystal
D 5127 Guide for Ultra Pure Water Used in the Electronics defects disturb local lattice energy conditions that are the basis
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and Semiconductor Industry for semiconductor behavior. These defects have distinct effects
F 26 Test Method for Determining the Orientation of a on essential semiconductor device-manufacturing processes
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Semiconductor Single Crystal such as alloying and diffusion.
F 523 Practice for Unaided Visual Inspection of Polished 5.2 This practice along with the referenced standards may
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Silicon Wafers be used for process control, research and development, and
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F 1241 Terminology of Silicon Technology materials’ acceptance purposes.
F 1809 Guide for Selection and Use of Etching Solutions to
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6. Apparatus
Delineate Structural Defects in Silicon
6.1 Slicing Equipment, suitable for removing wafers of
F 1810 Test Method for Counting Preferentially Etched or
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varied thickness from ingots.
Decorated Surface Defects in Silicon Wafers
2.2 SEMI Standards: 6.2 Lapping or Grinding Equipment (optional), suitable for
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removing saw damage.
C18 Specification for Acetic Acid
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C28 Specifications and Guidelines for Hydrofluoric Acid 6.3 Laboratory Equipment, suitable for use with hydrofluo-
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ric acid (fluorocarbon, polyethylene, or prolypropylene bea-
C35 Specifications and Guidelines for Nitric Acid
kers, graduates, pipets, and nonmetallic wafer pickup tools).
3. Terminology
6.4 Acid Sink, in a fume hood and facilities for disposing of
3.1 Defect-related terminology may be found in Terminol- acids and their vapors.
ogy F 1241. 6.5 Personnel Safety Equipment, for handling acids, such as
gloves, safety glasses, face shield, and gown.
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This guide is under the jurisdiction of ASTM Committee F01 on Electronics 7. Reagents and Materials
and is the direct responsibility of Subcommittee F01.06 on Silicon Materials and
7.1 Purity of Reagents—All chemicals for which such
Process Control.
specifications exist shall conform to the assay and impurity
Current edition approved Dec. 10, 2002. Published February 2003. Originally
approved in 1997. Last previous edition approved in 1997 as F 1725–97.
levels of Grade 1 SEMI Specifications. Other grades may be
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Annual Book of ASTM Standards, Vol 11.01.
used provided it is first ascertained that the reagent is of
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Annual Book of ASTM Standards, Vol 10.05.
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sufficiently high purity to permit its use without lessening the
Available from Semiconductor Equipment and Materials International, 3081
Zanker Road, San Jose, CA 95134 (www.semi.org). accuracy of the determination.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest informa
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