ASTM F1725-97

Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots

SCOPE
1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparations, etching solution selection and use, defect identification, and defect counting.
1.2 This practice is suitable for use if evaluating silicon grown in either (111) or (100) direction and doped either p or n type with resistivity greater than 0.005 Omega cm.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 09-Jun-1997
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaced By: ASTM F1725-02 - Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots (Withdrawn 2003)
• Effective Date: 10-Dec-2002

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn. Contact
ASTM International (www.astm.org) for the latest information.
Designation: F 1725 – 97
AMERICAN SOCIETY FOR TESTING AND MATERIALS
100 Barr Harbor Dr., West Conshohocken, PA 19428
Reprinted from the Annual Book of ASTM Standards. Copyright ASTM
Standard Guide for
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Analysis of Crystallographic Perfection of Silicon Ingots
This standard is issued under the fixed designation F 1725; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope crystal. A specimen wafer from the end of the remaining ingot
is obtained with a second cut.
1.1 This practice covers the analysis of the crystallographic
4.2 This wafer is mechanically lapped, chemically polished,
perfection in silicon ingots. The steps described are sample
and then etched in a preferential defect etching solution.
preparation, etching solution selection and use, defect identi-
4.3 The etched surface is examined under bright light
fication, and defect counting.
illumination and examined microscopically to count and clas-
1.2 This practice is suitable for use if evaluating silicon
sify the imperfections highlighted by the preferential defect
grown in either [111] or [100] direction and doped either p or
etching solution.
n type with resistivity greater than 0.005 Vcm.
1.3 This standard does not purport to address all of the
5. Significance and Use
safety concerns, if any, associated with its use. It is the
5.1 The use of silicon wafers in many semiconductor
responsibility of the user of this standard to establish appro-
devices requires a consistent atomic lattice structure. Crystal
priate safety and health practices and determine the applica-
defects disturb local lattice energy conditions that are the basis
bility of regulatory limitations prior to use.
for semiconductor behavior. These defects have distinct effects
on essential semiconductor device-manufacturing processes
2. Referenced Documents
such as alloying and diffusion.
2.1 ASTM Standards:
5.2 This practice along with the referenced standards may
2
D 5127 Guide for Electronic Grade Water
be used for process control, research and development, and
F 26 Test Method for Determining the Orientation of a
materials’ acceptance purposes.
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Semiconductor Single Crystal
6. Apparatus
F 523 Practice for Unaided Visual Inspection of Polished
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Silicon Wafers
6.1 Slicing Equipment, suitable for removing wafers of
3
F 1241 Terminology of Silicon Technology varied thickness from ingots.
F 1809 Guide for Selection and Use of Etching Solutions to
6.2 Lapping or Grinding Equipment (optional), suitable for
3
Delineate Structural Defects in Silicon removing saw damage.
F 1810 Test Method for Counting Preferentially Etched or
6.3 Laboratory Equipment, suitable for use with hydrofluo-
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Decorated Surface Defects in Silicon Wafers ric acid (fluorocarbon, polyethylene, or prolypropylene bea-
2.2 SEMI Specifications:
kers, graduates, pipets, and nonmetallic wafer pickup tools).
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SEMI C-1 Specification for Reagents . 6.4 Acid Sink, in a fume hood and facilities for disposing of
acids and their vapors.
3. Terminology
6.5 Personnel Safety Equipment, for handling acids, such as
gloves, safety glasses, face shield, and gown.
3.1 Defect-related terminology may be found in Terminol-
ogy F 1241.
7. Reagents and Materials
7.1 All chemicals for which such specifications exist shall
4. Summary of Practice
conform to SEMI specifications C–1.
4.1 The end portion of the silicon crystal, which solidified
7.2 Reference to water shall be understood to mean either
last, may contain dislocations or other defects such as slip. The
distilled water or deionized water, meeting the requirements of
portion containing the defects is removed by sawing the
Type I water as defined by Guide D 5127.
7.3 A variety of etching solutions exist. They have been
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found to produce satisfactory results as illustrated in Table 1
This guide is under the jurisdiction of ASTM Committee F-1 on Electronics and
is the direct responsibility of Subcommittee F01.06 on Silicon Materials and Process 7.4 An aqueous, nonionic surfactant detergent solution.
Control.
8. Hazards
Current edition approved June 10, 1997. Published August 1997.
2
Annual Book of ASTM Standards, Vol 11.01.
8.1 The chemicals used in polishing etches are potentially
3
Annual Book of ASTM Standards, Vol 10.05.
4
harmful and must be handled in a chemical exhaust fume hood,
Available from Semiconductor Equipment and Materials International, 805 E
Middlefield Rd., Mountain View, CA 94043. with the utmost care.
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NOTICE:¬This¬standard¬has¬either¬been¬superceded¬and¬replaced¬by¬a¬new¬version¬or¬discontinued.¬
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