ASTM F980M-96(2003)

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]

SIGNIFICANCE AND USE
Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in them. A determination of hardness is often necessary for the short term (≈100 μs) as well as long term (permanent damage) following exposure.
SCOPE
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 09-Jun-1996
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaces: ASTM F980M-96 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]
• Effective Date: 10-Jun-1996

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation:F980M–96 (Reapproved 2003)
Standard Guide for
Measurement of Rapid Annealing of Neutron-Induced
Displacement Damage in Silicon Semiconductor Devices
(Metric)
This standard is issued under the fixed designation F980M; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 3. Terminology
1.1 This guide defines the requirements and procedures for 3.1 Definitions of Terms Specific to This Standard:
testing silicon discrete semiconductor devices and integrated 3.1.1 annealing factor—the ratio of the displacement dam-
circuits for rapid-annealing effects from displacement damage age (as manifested in device parametric measurements) as a
resulting from neutron radiation. This test will produce degra- function of time following a pulse of neutrons and the
dation of the electrical properties of the irradiated devices and displacement damage remaining at the time the initial damage
should be considered a destructive test. Rapid annealing of achieves quasi equilibrium, approximately 1000 s.
displacement damage is usually associated with bipolar tech- 3.1.1.1 Discussion—Annealing factors have typical values
nologies. of 2 to 10 for these periods of time following irradiation; see
1.2 This standard does not purport to address all of the Refs (1, 2, 3, 4, 5, 6, 7).
safety concerns, if any, associated with its use. It is the 3.1.2 in situ tests—electrical measurements made on de-
responsibility of the user of this standard to consult and vices before, after, or during irradiation while they remain in
establish appropriate safety and health practices and deter- the immediate vicinity of the irradiation location. All rapid-
mine the applicability of regulatory limitations prior to use. annealing measurements are performed in situ because mea-
surement must begin immediately following irradiation (usu-
2. Referenced Documents
ally <1 ms).
2.1 ASTM Standards:
3.1.3 remote tests—electrical measurements made on de-
E666 PracticeforCalculatingAbsorbedDoseFromGamma vices that are physically removed from the irradiation location.
or X Radiation
For the purpose of this guide, remote tests are used only for the
E720 Guide for Selection and Use of Neutron Sensors for characterization of the parts before and after they are subjected
Determining Neutron Spectra Employed in Radiation- to the neutron radiation (see 6.4).
Hardness Testing of Electronics
4. Summary of Guide
E721 Guide for Determining Neutron Energy Spectra from
Neutron Sensors for Radiation-Hardness Testing of Elec- 4.1 Arapid-annealing radiation test requires continual time-
tronics sequential electrical-parameter measurements of key param-
E722 Practice for Characterizing Neutron Fluence Spectra eters of a device be made immediately following exposure to a
inTerms of an Equivalent Monoenergetic Neutron Fluence pulse of neutron radiation capable of causing significant
for Radiation-Hardness Testing of Electronics displacement damage.
F1032 Guide for Measuring Time-Dependent Total-Dose 4.2 Because many factors enter into the effects of the
Effects in Semiconductor Devices Exposed to Pulsed radiation on the part, parties to the test must establish many
Ionizing Radiation (Discontinued 1994) circumstances of the test before the validity of the test can be
established or the results of one group of parts can be
meaningfully compared with those of another group. Those
1 factors that must be established are as follows:
This guide is under the jurisdiction of ASTM Committee F01 on Electronics
and is the direct responsibility of Subcommittee F01.11 . 4.2.1 Radiation Source—The type and characteristics of the
Current edition approved June 10, 2003. Published June 2003. Originally
neutron radiation source to be used (see 6.2).
approved in 1986. Last previous edition approved in 1996 as F980M – 96. DOI:
4.2.2 Dose Rate Range—The range of ionizing dose rates
10.1520/F0980M-96R03.
within which the neutron exposures must take place. These
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
Standards volume information, refer to the standard’s Document Summary page on
the ASTM website.
3 4
Withdrawn. The last approved version of this historical standard is referenced The boldface numbers in parentheses refer to the list of references at the end of
on www.astm.org. this standard.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
F980M–96 (2003)
dose rates and the subsequent device response should not should also be known that adequate damage to the part can be
influence the parametric measurements being made (see 6.6). inflicted. Neutron fluences (n/cm ) are commonly specified in
4.2.3 Operating Conditions—The test circuit, electrical bi-
termsof1MeVsilicondamageequivalenceorinpercentageof
ases to be applied, and operating sequence (if applicable) for
the total above a given energy (see 7.5.1 and Guides E720 and
the part during and following exposure (see 6.5).
E721, and Practice E722).
4.2.4 Electrical Parameter Measurements— The pre-
6.4 Effects of Other Radiation—Some parts that will be
irradiation and postirradiation measurements to be made on the
evaluated for neutron-induced rapid-annealing effects may also
test unit and the measurements of changes in the annealing-
be affected by other types of radiation that may accompany the
sensitive parameters to be made beginning immediately after
particles (such as gamma radiation with neutrons). (See Guide
exposure.
F1032 and Practice E666.) For this reason, characterization of
4.2.5 Time Sequence—The exposure time, time after expo-
the part type to both types of radiation is necessary prior to the
sure when measurements of the selected parameter(s) are to
rapid-annealing tests.
begin, time when measurements are to end, and time intervals
6.5 Bias—Rapid annealing effects from displacement-
between measurements.
damage are usually associated with bipolar devices. Most of
4.2.6 Neutron Fluence Levels—The fluence range required
these effects are related to the electron density in semiconduc-
to sustain the desired damage to the device.
tor device junctions, which is a function of the operating-
4.2.6.1 Total Dose Levels—If the part is sensitive to an
current bias level. Operating conditions during exposure and
accompanying type of radiation (such as gamma rays) the
the rapid-annealing periods must be chosen to give a large or
levels to which the part can be exposed before the rapid-
small degree of annealing as desired. Lacking any preference
annealing measurement is affected (see 6.4).
on the most desirable bias, those conditions that approximate
4.2.7 Dosimetry—The type and technique used to measure
the actual device application may be used.
the radiation levels. This is dependent to some extent on the
radiation source selection. 6.6 Dose Rate:
4.2.7.1 Since a pulsed radiation source is implied for a
6.6.1 The excess charge carrier concentration depends on
rapid-annealing measurement, a time profile of the radiation
the dose rate. High densities of excess carriers can affect
intensity and its time relationship to the subsequent measure-
trapping site charge states as well as carrier mobilities and
ments is extremely helpful (see 7.1).
lifetimes, altering post-radiation trapped charge densities and
4.2.8 Temperature—The temperature during exposure and
distributions. If the neutron radiation is accompanied by an
the allowable temperature change during the time interval of
ionizing radiation, the rapid-annealing measurements may be
the rapid-annealing measurement (see 6.7).
affected. The charge carriers created by ionizing radiation act
4.2.9 Experimental Configuration—The physical arrange-
just like those carriers injected by biasing the device (see 6.5).
ment of the radiation source, test unit, radiation shielding, and
6.6.2 Because the device parameter measured during a
any other mechanical or electrical elements of this test.
rapid-annealing test may be significantly altered by a high dose
rate, it is necessary to ensure (through some functionality
5. Significance and Use
check) that the dose rate during irradiation does not reach a
5.1 Electronic circuits used in many space, military, and
level that will upset the parameter being measured.
nuclear power systems may be exposed to various levels and
6.6.3 Photocurrents produced by the excess carriers gener-
time profiles of neutron radiation. It is essential for the design
ated by an ionizing radiation can alter internal bias levels of a
and fabrication of such circuits that test methods be available
semiconductor device, thereby causing a variation in the
that can determine the vulnerability or hardness (measure of
rapid-annealing response. Care must be taken to ensure that
nonvulnerability) of components to be used in them. A deter-
dose-rate levels remain below a level that will cause debiasing
mination of hardness is often necessary for the short term
('100 µs) as well as long term (permanent damage) following of the device.
exposure.
6.6.4 For all of these reasons, the dose-rate range allowed
for the rapid-annealing measurements must be considered by
6. Interferences
the parties to the test.
6.1 There are many factors that can affect the results of
6.7 Temperature:
rapid-annealing tests. Care must be taken to control these
6.7.1 Because annealing of neutron-induced displacement
factors to obtain consistent and reproducible results.
damage is also dependent upon thermally activated processes
6.2 Pulsed Neutron-Radiation Source— Because the objec-
as well as current injection, the temperature during irradiation
tive of a rapid-annealing test is to observe short-term damage
and testing can affect the rapid-annealing measurements. It is
effects, it is implied that this damage is incurred in a short time
recommended that all radiation exposures and measurements
period and is severe enough to be easily measured. These
be done at 23 6 5°C unless unique requirements or unusual
factors imply a pulsed neutron source. The most commonly
environmental conditions dictate otherwise.
used source for rapid-annealing tests is a pulsed reactor. There
6.7.2 Because rapid annealing is affected by temperature, it
are two types commonly used; the bare-assembly fast-burst
reactor and the w
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