iTeh StandardsiTeh Standards
EURUSD
Your shopping cart is empty.
ASTM

ASTM E668-05

(Practice)

Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices

Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices

SIGNIFICANCE AND USE
Absorbed dose in a material is an important parameter that can be correlated with radiation effects produced in electronic components and devices that are exposed to ionizing radiation. Reasonable estimates of this parameter can be calculated if knowledge of the source radiation field (that is, energy spectrum and particle fluence) is available. Sufficiently detailed information about the radiation field is generally not available. However, measurements of absorbed dose with passive dosimeters in a radiation test facility can provide information from which the absorbed dose in a material of interest can be inferred. Under certain prescribed conditions, TLDs are quite suitable for performing such measurements.
Note 2—For comprehensive discussions of various dosimetry methods applicable to the radiation types and energy and absorbed dose-rate range discussed in this practice, see ICRU Reports 14, 17, 21, and 34.
SCOPE
1.1 This practice covers procedures for the use of thermoluminescence dosimeters (TLDs) to determine the absorbed dose in a material irradiated by ionizing radiation. Although some elements of the procedures have broader application, the specific area of concern is radiation-hardness testing of electronic devices. This practice is applicable to the measurement of absorbed dose in materials irradiated by gamma rays, X rays, and electrons of energies from 12 to 60 MeV. Specific energy limits are covered in appropriate sections describing specific applications of the procedures. The range of absorbed dose covered is approximately from 102 to 10 4 Gy (1 to 106 rad), and the range of absorbed dose rates is approximately from 102 to 1010 Gy/s (1 to 1012 rad/s). Absorbed dose and absorbed dose-rate measurements in materials subjected to neutron irradiation are not covered in this practice. Further, the portion of these procedures that deal with electron irradiation are primarily intended for use in parts testing. Testing of devices as a part of more massive components such as electronics boards or boxes may require techniques outside the scope of this practice.
Note 1—The purpose of the upper and lower limits on the energy for electron irradiation is to approach a limiting case where dosimetry is simplified. Specifically, the dosimetry methodology specified requires that the following three limiting conditions be approached: (a) energy loss of the primary electrons is small, (b) secondary electrons are largely stopped within the dosimeter, and ( c) bremsstrahlung radiation generated by the primary electrons is largely lost.
1.2 This standard dose not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

Status
Historical
Publication Date
31-May-2005
ICS
31.020 - Electronic components in general
Technical Committee
E10 - Nuclear Technology and Applications
Drafting Committee
E10.07 - Radiation Dosimetry for Radiation Effects on Materials and Devices
Current Stage
Ref Project

Relations

Replaces
ASTM E668-00 - Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
Effective Date
01-Jun-2005
Replaced By
ASTM E668-10 - Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
Effective Date
01-Jun-2010
Referred By
ASTM E2450-23 - Standard Practice for Application of CaF<inf>2</inf>(Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments
Effective Date
01-Jun-2005
Referred By
ASTM F996-11(2018) - Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current&#x2013;Voltage Characteristics (Withdrawn 2023)
Effective Date
01-Jun-2005
Referred By
ASTM E1249-15(2021) - Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
Effective Date
01-Jun-2005
Referred By
ASTM F448-18 - Standard Test Method for Measuring Steady-State Primary Photocurrent
Effective Date
01-Jun-2005
Referred By
ASTM E1819-15(2021) - Standard Guide for Environmental Monitoring Plans for Decommissioning of Nuclear Facilities
Effective Date
01-Jun-2005
Referred By
ASTM ISO/ASTM51956-13 - Standard Practice for Use of Thermoluminescence-Dosimetry (TLD) Systems for Radiation Processing
Effective Date
01-Jun-2005
Referred By
ASTM F773M-16 - Standard Practice for Measuring Dose Rate Response of Linear Integrated Circuits (Metric) (Withdrawn 2023)
Effective Date
01-Jun-2005
Referred By
ASTM E1250-15(2020) - Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
Effective Date
01-Jun-2005
Referred By
ASTM ISO/ASTM51631-20 - Standard Practice for Use of Calorimetric Dosimetry Systems for Dose Measurements and Routine Dosimetry System Calibration in Electron Beams
Effective Date
01-Jun-2005
Referred By
ASTM F1467-18 - Standard Guide for Use of an X-Ray Tester (&#x2248;10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
Effective Date
01-Jun-2005
Referred By
ASTM ISO/ASTM51026-15 - Standard Practice for Using the Fricke Dosimetry System
Effective Date
01-Jun-2005
Referred By
ASTM F1893-18 - Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices (Withdrawn 2023)
Effective Date
01-Jun-2005
Referred By
ASTM F1190-18 - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
Effective Date
01-Jun-2005

Buy Standard

ASTM E668-05 - Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic DevicesASTM E668-05 - Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
PreviousNext
Standard
ASTM E668-05 - Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
English language
19 pages
sale 15% off
Preview
sale 15% off
Preview

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation:E668–05
Standard Practice for
Application of Thermoluminescence-Dosimetry (TLD)
Systems for Determining Absorbed Dose in Radiation-
1
Hardness Testing of Electronic Devices
This standard is issued under the fixed designation E668; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
This standard has been approved for use by agencies of the Department of Defense.
1. Scope priate safety and health practices and determine the applica-
bility of regulatory limitations prior to use.
1.1 Thispracticecoversproceduresfortheuseofthermolu-
minescencedosimeters(TLDs)todeterminetheabsorbeddose
2. Referenced Documents
in a material irradiated by ionizing radiation. Although some
2
2.1 ASTM Standards:
elements of the procedures have broader application, the
E170 TerminologyRelatingtoRadiationMeasurementsand
specific area of concern is radiation-hardness testing of elec-
Dosimetry
tronic devices. This practice is applicable to the measurement
E380 Practice for Use of the International System of Units
of absorbed dose in materials irradiated by gamma rays, X
(SI) (the Modernized Metric System)
rays, and electrons of energies from 12 to 60 MeV. Specific
E666 PracticeforCalculatingAbsorbedDoseFromGamma
energy limits are covered in appropriate sections describing
or X Radiation
specific applications of the procedures. The range of absorbed
−2 4 6
2.2 International Commission on Radiation Units and
dose covered is approximately from 10 to 10 Gy (1 to 10
3
Measurements (ICRU) Reports:
rad), and the range of absorbed dose rates is approximately
−2 10 12
ICRU Report 14—Radiation Dosimetry: X Rays and
from 10 to 10 Gy/s (1 to 10 rad/s). Absorbed dose and
Gamma Rays with Maximum Photon Energies Between
absorbed dose-rate measurements in materials subjected to
0.6 and 50 MeV
neutronirradiationarenotcoveredinthispractice.Further,the
ICRU Report 17—Radiation Dosimetry: X Rays Generated
portion of these procedures that deal with electron irradiation
at Potentials of 5 to 150 keV
are primarily intended for use in parts testing. Testing of
ICRUReport 21—RadiationDosimetry:ElectronswithIni-
devices as a part of more massive components such as
tial Energies Between 1 and 50 MeV
electronics boards or boxes may require techniques outside the
ICRU Report 31—Average Energy Required to Produce an
scope of this practice.
Ion Pair
NOTE 1—The purpose of the upper and lower limits on the energy for
ICRU Report 33—Radiation Quantities and Units
electron irradiation is to approach a limiting case where dosimetry is
ICRU Report 34—The Dosimetry of Pulsed Radiation
simplified.Specifically,thedosimetrymethodologyspecifiedrequiresthat
ICRU Report 37—Stopping Powers for Electrons and
the following three limiting conditions be approached: (a) energy loss of
Positrons
the primary electrons is small, (b) secondary electrons are largely stopped
within the dosimeter, and (c) bremsstrahlung radiation generated by the
3. Terminology
primary electrons is largely lost.
3.1 Definitions:
1.2 This standard dose not purport to address all of the
3.1.1 absorbeddose,D—thequotientofd´¯bydm,whered´¯
safety concerns, if any, associated with its use. It is the
isthemeanenergyimpartedbyionizingradiationtothematter
responsibility of the user of this standard to establish appro-
in a volume element and dm is the mass of matter in that
volume element.
1
This practice is under the jurisdiction of ASTM Committee E10 on Nuclear
2
Technology and Applications and is the direct responsibility of Subcommittee For referenced ASTM standards, visit the ASTM website, www.astm.org, or
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices on contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
Materials and Devices. Standards volume information, refer to the standard’s Document Summary page on
Current edition approved June 1, 2005. Published June 2005. Originally the ASTM website.
3
approved in 1978. Last previous edition approved in 2000 as E668–00. DOI: Available from International Commission on Radiation Units and Measure-
10.1520/E0668-05. ments, 7910, Woodmont Ave., Suite 800, Bethesda, MD 20814.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

---------------------- Page: 1 ----------------------
E668–05
d´¯
material being irradiated. This interaction is a principal means
D 5 (1)
dm
of energy loss for the primary electrons. The kinetic energy of
a secondary electron is typically much lower than that of the
Previously, the special unit of absorbed dose was the r
...

Questions, Comments and Discussion

Ask us and Technical Secretary will try to provide an answer. You can facilitate discussion about the standard in here.

This May Also Interest You

ASTM
ASTM E1250-15(2020)(Test Method)
Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices

SIGNIFICANCE AND USE
4.1 Although Co-60 nuclei only emit monoenergetic gamma rays at 1.17 and 1.33 MeV, the finite thickness of sources, and encapsulation materials and other surrounding structures that are inevitably present in irradiators can contribute a substantial amount of low-energy gamma radiation, principally by Compton scattering (1, 2).3 In radiation-hardness testing of electronic devices this low-energy photon component of the gamma spectrum can introduce significant dosimetry errors for a device under test since the equilibrium absorbed dose as measured by a dosimeter can be quite different from the absorbed dose deposited in the device under test because of absorbed dose enhancement effects (3, 4). Absorbed dose enhancement effects refer to the deviations from equilibrium absorbed dose caused by non-equilibrium electron transport near boundaries between dissimilar materials.  
4.2 The ionization chamber technique described in this method provides an easy means for estimating the importance of the low-energy photon component of any given irradiator type and configuration.  
4.3 When there is an appreciable low-energy spectral component present in a particular irradiator configuration, special experimental techniques should be used to ensure that dosimetry measurements adequately represent the absorbed dose in the device under test. (See Practice E1249.)
SCOPE
1.1 Low energy components in the photon energy spectrum of Co-60 irradiators lead to absorbed dose enhancement effects in the radiation-hardness testing of silicon electronic devices. These low energy components may lead to errors in determining the absorbed dose in a specific device under test. This method covers procedures for the use of a specialized ionization chamber to determine a figure of merit for the relative importance of such effects. It also gives the design and instructions for assembling this chamber.  
1.2 This method is applicable to measurements in Co-60 radiation fields where the range of exposure rates is 7 × 10 −6 to 3 × 10−2 C kg −1 s−1 (approximately 100 R/h to 100 R/s). For guidance in applying this method to radiation fields where the exposure rate is >100 R/s, see Appendix X1.  
Note 1: See Terminology E170 for definition of exposure and its units.  
1.3 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.  
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

  • Standard
    10 pages
    English language
    sale 15% off
ASTM
ASTM E668-20(Practice)
Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices

SIGNIFICANCE AND USE
4.1 Absorbed dose in a material is an important parameter that can be correlated with radiation effects produced in electronic components and devices that are exposed to ionizing radiation. Reasonable estimates of this parameter can be calculated if knowledge of the source radiation field (that is, energy spectrum and particle fluence) is available. Sufficiently detailed information about the radiation field is generally not available. However, measurements of absorbed dose with passive dosimeters in a radiation test facility can provide information from which the absorbed dose in a material of interest can be inferred. Under certain prescribed conditions, TLDs are quite suitable for performing such measurements.
Note 2: For comprehensive discussions of various dosimetry methods applicable to the radiation types and energy and absorbed dose-rate range discussed in this practice, see ICRU Reports 14, 17, 21, and 34.
SCOPE
1.1 This practice covers procedures for the use of thermoluminescence dosimeters (TLDs) to determine the absorbed dose in a material irradiated by ionizing radiation. Although some elements of the procedures have broader application, the specific area of concern is radiation-hardness testing of electronic devices. This practice is applicable to the measurement of absorbed dose in materials irradiated by gamma rays, X rays, and electrons of energies from 12 to 60 MeV. Specific energy limits are covered in appropriate sections describing specific applications of the procedures. The range of absorbed dose covered is approximately from 10−2 to 104 Gy (1 to 106 rad), and the range of absorbed dose rates is approximately from 10−2 to 1010 Gy/s (1 to 1012 rad/s). Absorbed dose and absorbed dose-rate measurements in materials subjected to neutron irradiation are not covered in this practice. (See Practice E2450 for guidance in mixed fields.) Further, the portion of these procedures that deal with electron irradiation are primarily intended for use in parts testing. Testing of devices as a part of more massive components such as electronics boards or boxes may require techniques outside the scope of this practice.
Note 1: The purpose of the upper and lower limits on the energy for electron irradiation is to approach a limiting case where dosimetry is simplified. Specifically, the dosimetry methodology specified requires that the following three limiting conditions be approached: (a) energy loss of the primary electrons is small, (b) secondary electrons are largely stopped within the dosimeter, and (c) bremsstrahlung radiation generated by the primary electrons is largely lost.  
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.3 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

  • Standard
    19 pages
    English language
    sale 15% off
  • Standard
    19 pages
    English language
    sale 15% off
ASTM
ASTM F1263-11(2019)(Guide)
Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts

SIGNIFICANCE AND USE
5.1 Overtesting should be done when (a) testing by variables is impractical because of time and cost considerations or because the probability distribution of stress to failure cannot be estimated with sufficient accuracy, and (b) an unrealistically large number of parts would have to be tested at the specification stress for the necessary confidence and survival probability.
SCOPE
1.1 This guide covers the use of overtesting in order to reduce the required number of parts that must be tested to meet a given quality acceptance standard. Overtesting is testing a sample number of parts at a stress level higher than their specification stress in order to reduce the amount of necessary data taking. This guide discusses when and how overtesting may be applied to forming probabilistic estimates for the survival of electronic piece parts subjected to radiation stress. Some knowledge of the probability distribution governing the stress-to-failure of the parts is necessary, although exact knowledge may be replaced by over-conservative estimates of this distribution.  
1.2 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

  • Guide
    3 pages
    English language
    sale 15% off
ASTM
ASTM E1854-19(Practice)
Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts

SIGNIFICANCE AND USE
4.1 This practice was written primarily to guide test participants in establishing, identifying, maintaining, and using suitable environments for conducting high quality neutron tests. Its development was motivated, in large measure, because inadequate controls in the neutron-effects-test process have, in some past instances, resulted in exposures that have differed by factors of three or more from irradiation specifications. A radiation test environment generally differs from the environment in which the electronics must operate (the operational environment); therefore, a high quality test requires not only the use of a suitable radiation environment, but also control and compensation for contributions to damage that differ from those in the operational environment. In general, the responsibility for identifying suitable test environments to accomplish test objectives lies with the sponsor/user/tester and test specialist part of the team, with the assistance of an independent validator, if available. The responsibility for the establishment and maintenance of suitable environments lies with the facility operator/dosimetrist and test specialist, again with the possible assistance of an independent validator. Additional guidance on the selection of an irradiation facility is provided in Practice F1190.  
4.2 This practice identifies the tasks that must be accomplished to ensure a successful high quality test. It is the overall responsibility of the sponsor or user to ensure that all of the required tasks are complete and conditions are met. Other participants provide appropriate documentation to enable the sponsor or user to make that determination.  
4.3 The principal determinants of a properly conducted test are: (1) the radiation test environment shall be well characterized, controlled, and correlated with the specified irradiation levels; (2) damage produced in the electronic materials and devices is caused by the desired, specified component of the environment...
SCOPE
1.1 This practice sets forth requirements to ensure consistency in neutron-induced displacement damage testing of silicon and gallium arsenide electronic piece parts. This requires controls on facility, dosimetry, tester, and communications processes that affect the accuracy and reproducibility of these tests. It provides background information on the technical basis for the requirements and additional recommendations on neutron testing.  
1.2 Methods are presented for ensuring and validating consistency in neutron displacement damage testing of electronic parts such as integrated circuits, transistors, and diodes. The issues identified and the controls set forth in this practice address the characterization and suitability of the radiation environments. They generally apply to reactor sources, accelerator-based neutron sources, such as 14-MeV DT sources, and  252Cf sources. Facility and environment characteristics that introduce complications or problems are identified, and recommendations are offered to recognize, minimize or eliminate these problems. This practice may be used by facility users, test personnel, facility operators, and independent process validators to determine the suitability of a specific environment within a facility and of the testing process as a whole. Electrical measurements are addressed in other standards, such as Guide F980. Additional information on conducting irradiations can be found in Practices E798 and F1190. This practice also may be of use to test sponsors (organizations that establish test specifications or otherwise have a vested interest in the performance of electronics in neutron environments).  
1.3 Methods for the evaluation and control of undesired contributions to damage are discussed in this practice. References to relevant ASTM standards and technical reports are provided. Processes and methods used to arrive at the appropriate test environments and specification levels f...

  • Standard
    13 pages
    English language
    sale 15% off
  • Standard
    13 pages
    English language
    sale 15% off
ASTM
ASTM F1467-18(Guide)
Standard Guide for Use of an X-Ray Tester (≈10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits

SIGNIFICANCE AND USE
4.1 Electronic circuits used in many space, military and nuclear power systems may be exposed to various levels of ionizing radiation dose. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in such systems.  
4.2 Manufacturers are currently selling semiconductor parts with guaranteed hardness ratings, and the military specification system is being expanded to cover hardness specification for parts. Therefore test methods and guides are required to standardize qualification testing.  
4.3 Use of low energy (≈10 keV) X-ray sources has been examined as an alternative to cobalt-60 for the ionizing radiation effects testing of microelectronic devices (3, 4, 5, 6). The goal of this guide is to provide background information and guidance for such use where appropriate.
Note 3: Cobalt-60—The most commonly used source of ionizing radiation for ionizing radiation (“total dose”) testing is cobalt-60. Gamma rays with energies of 1.17 and 1.33 MeV are the primary ionizing radiation emitted by cobalt-60. In exposures using cobalt-60 sources, test specimens must be enclosed in a lead-aluminum container to minimize dose-enhancement effects caused by low-energy scattered radiation (unless it has been demonstrated that these effects are negligible). For this lead-aluminum container, a minimum of 1.5 mm of lead surrounding an inner shield of 0.7 to 1.0 mm of aluminum is required. (See 8.2.2.2 and Practice E1249.)  
4.4 The X-ray tester has proven to be a useful ionizing radiation effects testing tool because:  
4.4.1 It offers a relatively high dose rate, in comparison to most cobalt-60 sources, thus offering reduced testing time.  
4.4.2 The radiation is of sufficiently low energy that it can be readily collimated. As a result, it is possible to irradiate a single device on a wafer.  
4.4.3 Radiation safety issues are more easily...
SCOPE
1.1 This guide covers recommended procedures for the use of X-ray testers (that is, sources with a photon spectrum having ≈10 keV mean photon energy and ≈50 keV maximum energy) in testing semiconductor discrete devices and integrated circuits for effects from ionizing radiation.  
1.2 The X-ray tester may be appropriate for investigating the susceptibility of wafer level or delidded microelectronic devices to ionizing radiation effects. It is not appropriate for investigating other radiation-induced effects such as single-event effects (SEE) or effects due to displacement damage.  
1.3 This guide focuses on radiation effects in metal oxide semiconductor (MOS) circuit elements, either designed (as in MOS transistors) or parasitic (as in parasitic MOS elements in bipolar transistors).  
1.4 Information is given about appropriate comparison of ionizing radiation hardness results obtained with an X-ray tester to those results obtained with cobalt-60 gamma irradiation. Several differences in radiation-induced effects caused by differences in the photon energies of the X-ray and cobalt-60 gamma sources are evaluated. Quantitative estimates of the magnitude of these differences in effects, and other factors that should be considered in setting up test protocols, are presented.  
1.5 If a 10-keV X-ray tester is to be used for qualification testing or lot acceptance testing, it is recommended that such tests be supported by cross checking with cobalt-60 gamma irradiations.  
1.6 Comparisons of ionizing radiation hardness results obtained with an X-ray tester with results obtained with a LINAC, with protons, etc. are outside the scope of this guide.  
1.7 Current understanding of the differences between the physical effects caused by X-ray and cobalt-60 gamma irradiations is used to provide an estimate of the ratio (number-of-holes-cobalt-60)/(number-of-holes-X-ray). Several cases are defined where the differences in the eff...

  • Guide
    18 pages
    English language
    sale 15% off
  • Guide
    18 pages
    English language
    sale 15% off
ASTM
ASTM F1190-18(Guide)
Standard Guide for Neutron Irradiation of Unbiased Electronic Components

SIGNIFICANCE AND USE
5.1 Semiconductor devices can be permanently damaged by neutrons (1, 2)6. The effect of such damage on the performance of an electronic component can be determined by measuring the component’s electrical characteristics before and after exposure to fast neutrons in the neutron fluence range of interest. The resulting data can be utilized in the design of electronic circuits that are tolerant of the degradation exhibited by that component.  
5.2 This guide provides a method by which the exposure of silicon and gallium arsenide semiconductor devices to neutron irradiation may be performed in a manner that is repeatable and which will allow comparison to be made of data taken at different facilities.  
5.3 For semiconductors other than silicon and gallium arsenide, applicable validated 1-MeV damage functions are not available in codified National standards. In the absence of a validated 1-MeV damage function, the non-ionizing energy loss (NIEL) or the displacement kerma, as a function of incident neutron energy, normalized to the response in the 1 MeV energy region, may be used as an approximation. See Practice E722 for a description of the method used to determine the damage functions in Si and GaAs (3).
SCOPE
1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation to determine the permanent damage in the components. Validated 1-MeV displacement damage functions codified in National Standards are not currently available for other semiconductor materials.  
1.2 Elements of this guide, with the deviations noted, may also be applicable to the exposure of semiconductors comprised of other materials except that validated 1-MeV displacement damage functions codified in National standards are not currently available.  
1.3 Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined using appropriate electrical test methods.  
1.4 This guide addresses those issues and concerns pertaining to irradiations with neutrons.  
1.5 System and subsystem exposures and test methods are not included in this guide.  
1.6 The range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 109 to 1016  1-MeV n/cm2.  
1.7 This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.  
1.8 This guide provides an alternative to Test Method 1017, Neutron Displacement Testing, a component of MIL-STD-883 and MIL-STD-750.  
1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.10 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

  • Guide
    6 pages
    English language
    sale 15% off
  • Guide
    6 pages
    English language
    sale 15% off
ASTM
ASTM E668-20(Practice)
Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices

SIGNIFICANCE AND USE
4.1 Absorbed dose in a material is an important parameter that can be correlated with radiation effects produced in electronic components and devices that are exposed to ionizing radiation. Reasonable estimates of this parameter can be calculated if knowledge of the source radiation field (that is, energy spectrum and particle fluence) is available. Sufficiently detailed information about the radiation field is generally not available. However, measurements of absorbed dose with passive dosimeters in a radiation test facility can provide information from which the absorbed dose in a material of interest can be inferred. Under certain prescribed conditions, TLDs are quite suitable for performing such measurements.
Note 2: For comprehensive discussions of various dosimetry methods applicable to the radiation types and energy and absorbed dose-rate range discussed in this practice, see ICRU Reports 14, 17, 21, and 34.
SCOPE
1.1 This practice covers procedures for the use of thermoluminescence dosimeters (TLDs) to determine the absorbed dose in a material irradiated by ionizing radiation. Although some elements of the procedures have broader application, the specific area of concern is radiation-hardness testing of electronic devices. This practice is applicable to the measurement of absorbed dose in materials irradiated by gamma rays, X rays, and electrons of energies from 12 to 60 MeV. Specific energy limits are covered in appropriate sections describing specific applications of the procedures. The range of absorbed dose covered is approximately from 10−2 to 104 Gy (1 to 106 rad), and the range of absorbed dose rates is approximately from 10−2 to 1010 Gy/s (1 to 1012 rad/s). Absorbed dose and absorbed dose-rate measurements in materials subjected to neutron irradiation are not covered in this practice. (See Practice E2450 for guidance in mixed fields.) Further, the portion of these procedures that deal with electron irradiation are primarily intended for use in parts testing. Testing of devices as a part of more massive components such as electronics boards or boxes may require techniques outside the scope of this practice.
Note 1: The purpose of the upper and lower limits on the energy for electron irradiation is to approach a limiting case where dosimetry is simplified. Specifically, the dosimetry methodology specified requires that the following three limiting conditions be approached: (a) energy loss of the primary electrons is small, (b) secondary electrons are largely stopped within the dosimeter, and (c) bremsstrahlung radiation generated by the primary electrons is largely lost.  
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.3 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

  • Standard
    19 pages
    English language
    sale 15% off
  • Standard
    19 pages
    English language
    sale 15% off
ASTM
ASTM E1250-15(2020)(Test Method)
Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices

SIGNIFICANCE AND USE
4.1 Although Co-60 nuclei only emit monoenergetic gamma rays at 1.17 and 1.33 MeV, the finite thickness of sources, and encapsulation materials and other surrounding structures that are inevitably present in irradiators can contribute a substantial amount of low-energy gamma radiation, principally by Compton scattering (1, 2).3 In radiation-hardness testing of electronic devices this low-energy photon component of the gamma spectrum can introduce significant dosimetry errors for a device under test since the equilibrium absorbed dose as measured by a dosimeter can be quite different from the absorbed dose deposited in the device under test because of absorbed dose enhancement effects (3, 4). Absorbed dose enhancement effects refer to the deviations from equilibrium absorbed dose caused by non-equilibrium electron transport near boundaries between dissimilar materials.  
4.2 The ionization chamber technique described in this method provides an easy means for estimating the importance of the low-energy photon component of any given irradiator type and configuration.  
4.3 When there is an appreciable low-energy spectral component present in a particular irradiator configuration, special experimental techniques should be used to ensure that dosimetry measurements adequately represent the absorbed dose in the device under test. (See Practice E1249.)
SCOPE
1.1 Low energy components in the photon energy spectrum of Co-60 irradiators lead to absorbed dose enhancement effects in the radiation-hardness testing of silicon electronic devices. These low energy components may lead to errors in determining the absorbed dose in a specific device under test. This method covers procedures for the use of a specialized ionization chamber to determine a figure of merit for the relative importance of such effects. It also gives the design and instructions for assembling this chamber.  
1.2 This method is applicable to measurements in Co-60 radiation fields where the range of exposure rates is 7 × 10 −6 to 3 × 10−2 C kg −1 s−1 (approximately 100 R/h to 100 R/s). For guidance in applying this method to radiation fields where the exposure rate is >100 R/s, see Appendix X1.  
Note 1: See Terminology E170 for definition of exposure and its units.  
1.3 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.  
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.5 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

  • Standard
    10 pages
    English language
    sale 15% off
ASTM
ASTM F1263-11(2019)(Guide)
Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts

SIGNIFICANCE AND USE
5.1 Overtesting should be done when (a) testing by variables is impractical because of time and cost considerations or because the probability distribution of stress to failure cannot be estimated with sufficient accuracy, and (b) an unrealistically large number of parts would have to be tested at the specification stress for the necessary confidence and survival probability.
SCOPE
1.1 This guide covers the use of overtesting in order to reduce the required number of parts that must be tested to meet a given quality acceptance standard. Overtesting is testing a sample number of parts at a stress level higher than their specification stress in order to reduce the amount of necessary data taking. This guide discusses when and how overtesting may be applied to forming probabilistic estimates for the survival of electronic piece parts subjected to radiation stress. Some knowledge of the probability distribution governing the stress-to-failure of the parts is necessary, although exact knowledge may be replaced by over-conservative estimates of this distribution.  
1.2 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

  • Guide
    3 pages
    English language
    sale 15% off
ASTM
ASTM E1854-19(Practice)
Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts

SIGNIFICANCE AND USE
4.1 This practice was written primarily to guide test participants in establishing, identifying, maintaining, and using suitable environments for conducting high quality neutron tests. Its development was motivated, in large measure, because inadequate controls in the neutron-effects-test process have, in some past instances, resulted in exposures that have differed by factors of three or more from irradiation specifications. A radiation test environment generally differs from the environment in which the electronics must operate (the operational environment); therefore, a high quality test requires not only the use of a suitable radiation environment, but also control and compensation for contributions to damage that differ from those in the operational environment. In general, the responsibility for identifying suitable test environments to accomplish test objectives lies with the sponsor/user/tester and test specialist part of the team, with the assistance of an independent validator, if available. The responsibility for the establishment and maintenance of suitable environments lies with the facility operator/dosimetrist and test specialist, again with the possible assistance of an independent validator. Additional guidance on the selection of an irradiation facility is provided in Practice F1190.  
4.2 This practice identifies the tasks that must be accomplished to ensure a successful high quality test. It is the overall responsibility of the sponsor or user to ensure that all of the required tasks are complete and conditions are met. Other participants provide appropriate documentation to enable the sponsor or user to make that determination.  
4.3 The principal determinants of a properly conducted test are: (1) the radiation test environment shall be well characterized, controlled, and correlated with the specified irradiation levels; (2) damage produced in the electronic materials and devices is caused by the desired, specified component of the environment...
SCOPE
1.1 This practice sets forth requirements to ensure consistency in neutron-induced displacement damage testing of silicon and gallium arsenide electronic piece parts. This requires controls on facility, dosimetry, tester, and communications processes that affect the accuracy and reproducibility of these tests. It provides background information on the technical basis for the requirements and additional recommendations on neutron testing.  
1.2 Methods are presented for ensuring and validating consistency in neutron displacement damage testing of electronic parts such as integrated circuits, transistors, and diodes. The issues identified and the controls set forth in this practice address the characterization and suitability of the radiation environments. They generally apply to reactor sources, accelerator-based neutron sources, such as 14-MeV DT sources, and  252Cf sources. Facility and environment characteristics that introduce complications or problems are identified, and recommendations are offered to recognize, minimize or eliminate these problems. This practice may be used by facility users, test personnel, facility operators, and independent process validators to determine the suitability of a specific environment within a facility and of the testing process as a whole. Electrical measurements are addressed in other standards, such as Guide F980. Additional information on conducting irradiations can be found in Practices E798 and F1190. This practice also may be of use to test sponsors (organizations that establish test specifications or otherwise have a vested interest in the performance of electronics in neutron environments).  
1.3 Methods for the evaluation and control of undesired contributions to damage are discussed in this practice. References to relevant ASTM standards and technical reports are provided. Processes and methods used to arrive at the appropriate test environments and specification levels f...

  • Standard
    13 pages
    English language
    sale 15% off
  • Standard
    13 pages
    English language
    sale 15% off