EN 62047-11:2013
(Main)Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
IEC 62047-11:2013 specifies the test method to measure the linear thermal expansion coefficients (CLTE) of thin free-standing solid (metallic, ceramic, polymeric, etc.) micro-electro-mechanical system (MEMS) materials with length between 0,1 mm and 1 mm and width between 10 micrometre and 1 mm and thickness between 0,1 micrometre and 1 mm, which are main structural materials used for MEMS, micromachines and others. This test method is applicable for the CLTE measurement in the temperature range from room temperature to 30 % of a material's melting temperature.
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 11: Prüfverfahren für lineare thermische Ausdehnungskoeffizienten für freistehende Werkstoffe der Mikrosystemtechnik
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 11: Méthode d'essai pour les coefficients de dilatation thermique linéaire des matériaux autonomes pour systèmes microélectromécaniques
La CEI 62047-11:2013 définit la méthode d'essai pour mesurer les coefficients de dilatation thermique linéaire (CLTE) de matériaux de systèmes micro-électromécaniques (MEMS) solides autonomes minces (métalliques, céramiques, polymères, etc.) dont la longueur est comprise entre 0,1 mm et 1 mm, la largeur entre 10 micrometre et 1 mm et l'épaisseur entre 0,1 micrometre et 1 mm, qui sont les matériaux structurels principaux utilisés pour les MEMS, les micromachines et autres. Cette méthode d'essai peut s'appliquer à la mesure des CLTE dans la gamme de températures allant de la température ambiante jusqu'à 30 % de la température de fusion du matériau.
Polprevodniški elementi - Mikroelektromehanski elementi - 11. del: Preskusna metoda za koeficiente linearnega toplotnega raztezanja samostojnih materialov za mikroelektromehanske sisteme (IEC 62047-11:2013)
Ta del standarda IEC 62047 določa preskusno metodo za merjenje koeficientov linearnega toplotnega raztezanja tankih samostojnih trdih (kovinskih, keramičnih, polimernih itd.) materialov za mikroelektromehanske sisteme (MEMS) z dolžino med 0,1 in 1 mm, širino med 10 μm in 1 mm ter debelino med 0,1 μm in 1 mm, ki so glavni konstrukcijski materiali, ki se uporabljajo za MEMS, mikrostroje in drugo. Ta preskusna metoda se uporablja za merjenje koeficientov linearnega toplotnega raztezanja v temperaturnem obsegu od sobne temperature do 30 % temperature taljenja materiala.
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
01-maj-2014
Polprevodniški elementi - Mikroelektromehanski elementi - 11. del: Preskusna
metoda za koeficiente linearnega toplotnega raztezanja samostojnih materialov za
mikroelektromehanske sisteme (IEC 62047-11:2013)
Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for
coefficients of linear thermal expansion of free-standing materials for micro-
electromechanical systems
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 11: Prüfverfahren
für lineare thermische Ausdehnungskoeffizienten für freistehende Werkstoffe der
Mikrosystemtechnik
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 11: Méthode
d'essai pour les coefficients de dilatation thermique linéaire des matériaux autonomes
pour systèmes microélectromécaniques
Ta slovenski standard je istoveten z: EN 62047-11:2013
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD
EN 62047-11
NORME EUROPÉENNE
September 2013
EUROPÄISCHE NORM
ICS 31.080.99
English version
Semiconductor devices -
Micro-electromechanical devices -
Part 11: Test method for coefficients of linear thermal expansion
of free-standing materials for micro-electromechanical systems
(IEC 62047-11:2013)
Dispositifs à semiconducteurs - Halbleiterbauelemente -
Dispositifs microélectromécaniques - Bauelemente der Mikrosystemtechnik -
Partie 11: Méthode d'essai pour les Teil 11: Prüfverfahren für lineare
coefficients de dilatation thermique thermische Ausdehnungskoeffizienten für
linéaire des matériaux autonomes pour freistehende Werkstoffe der
systèmes microélectromécaniques Mikrosystemtechnik
(CEI 62047-11:2013) (IEC 62047-11:2013)
This European Standard was approved by CENELEC on 2013-08-21. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the CEN-CENELEC Management Centre or to any CENELEC member.
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© 2013 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-11:2013 E
Foreword
The text of document 47F/154/FDIS, future edition 1 of IEC 62047-11, prepared by IEC/TC 47F
"Microelectromechanical systems" of IEC/TC 47 "Semiconductor devices" was submitted to the
IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-11:2013.
The following dates are fixed:
(dop) 2014-05-21
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2016-08-21
standards conflicting with the
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.
Endorsement notice
The text of the International Standard IEC 62047-11:2013 was approved by CENELEC as a European
Standard without any modification.
- 3 - EN 62047-11:2013
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year
IEC 62047-3 - Semiconductor devices - Micro- EN 62047-3 -
electromechanical devices -
Part 3: Thin film standard test piece for
tensile-testing
IEC 62047-11 ®
Edition 1.0 2013-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 11: Test method for coefficients of linear thermal expansion of free-standing
materials for micro-electromechanical systems
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 11: Méthode d'essai pour les coefficients de dilatation thermique linéaire
des matériaux autonomes pour systèmes microélectromécaniques
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX R
ICS 31.080.99 ISBN 978-2-8322-0965-3
– 2 – 62047-11 © IEC:2013
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative References . 5
3 Symbols and designations . 5
4 Test piece . 6
4.1 General . 6
4.2 Shape of test piece . 6
4.3 Test piece thickness . 6
4.4 In-plane type test piece . 7
4.5 Out-of-plane type test piece . 7
5 Testing method and test apparatus . 7
5.1 Measurement principle . 7
5.1.1 General . 7
5.1.2 In-plane method . 8
5.1.3 Out-of-plane method . 8
5.2 Test apparatus . 9
5.2.1 General . 9
5.2.2 In-plane method . 9
5.2.3 Out-of-plane method . 9
5.3 Temperature measurement . 9
5.4 In-plane test piece handling . 9
5.5 Thermal strain measurement . 10
5.6 Heating speed . 10
5.7 Data analysis . 10
5.7.1 General . 10
5.7.2 Terminal-based calculation . 10
5.7.3 Slope calculation by linear least squares method . 10
6 Test report . 10
Annex A (informative) Test piece fabrication . 12
Annex B (informative) Test piece handling example . 13
Annex C (informative) Test piece releasing process . 14
Annex D (informative) Out-of-plane test setup and test piece example . 15
Annex E (informative) Data analysis example in in-plane test method . 16
Annex F (informative) Data analysis example in out-of-plane test method . 17
Bibliography . 19
Figure 1 – Thin film test piece . 6
Figure 2 – CLTE measurement principles. 8
Figure A.1 – Schematic test piece fabrication process . 12
Figure B.1 – Auxiliary jigs and a specimen example . 13
Figure C.1 – Schematic illustration showing the test piece releasing process . 14
Figure D.1 – Example of test setup and test piece . 15
Figure E.1 – Example of CLTE measurement with an aluminium test piece . 16
Figure F.1 – Example of CLTE measurement with a gold test piece . 18
Table 1 – Symbols and designations . 5
62047-11 © IEC:2013 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 11: Test method for coefficients of linear thermal expansion
of free-standing materials for micro-electromechanical systems
FOREWORD
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