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EN 150003:1991

(Main)

Blank Detail Specification: Case-rated bipolar transistors for low frequency amplification

Blank Detail Specification: Case-rated bipolar transistors for low frequency amplification

D114/033: Withdrawn

Vordruck für Bauartspezifikation: Gehäusebezogene bipolaire Transistoren für NF-Verstärkung

Spécification particulière cadre: Transistors bipolaires à température de boîtier spécifiée, pour amplification en basse fréquence

Blank detail specification: Case-rated biopolar transistors for low frequency amplification

General Information

Status
Withdrawn
Publication Date
14-Dec-1991
Withdrawal Date
02-Dec-2002
Technical Committee
CLC/SR 47E - Discrete semiconductor devices
Drafting Committee
IEC/SC 47E - IEC_SC_47E
Parallel Committee
IEC/SC 47E - IEC_SC_47E
Current Stage
9960 - Withdrawal effective - Withdrawal
Start Date
03-Dec-2002
Completion Date
03-Dec-2002
Ref Project
SIST EN 150003:2002 - Blank Detail Specification: Case-rated bipolar transistors for low frequency amplification

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2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Blank detail specification: Case-rated biopolar transistors for low frequency amplificationVordruck für Bauartspezifikation: Gehäusebezogene bipolaire Transistoren für NF-VerstärkungSpécification particulière cadre: Transistors bipolaires à température de boîtier spécifiée, pour amplification en basse fréquenceBlank Detail Specification: Case-rated bipolar transistors for lo
...

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