prEN IEC 62228-5:2026

• Status: Not Published
• Publication Date: 23-Apr-2028
• ICS: 31.200 - Integrated circuits. Microelectronics
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Current Stage: 4020 - Enquiry circulated - Enquiry
• Start Date: 02-Oct-2026
• Due Date: 30-Jan-2026
• Completion Date: 02-Oct-2026
• Ref Project: oSIST prEN IEC 62228-5:2026 - Integrated circuits - EMC evaluation of transceivers - Part 5: Ethernet transceivers

• Revises: EN IEC 62228-5:2021 - Integrated circuits - EMC evaluation of transceivers - Part 5: Ethernet transceivers
• Effective Date: 08-Apr-2025
• Revises: EN IEC 62228-5:2021/prA1:2022 - Integrated circuits - EMC evaluation of transceivers - Part 5: Ethernet transceivers
• Effective Date: 08-Apr-2025

prEN IEC 62228-5:2026 is a CLC draft for the IEC standard on EMC evaluation of Ethernet transceiver integrated circuits. It specifies test and measurement methods for transceiver ICs used in Ethernet systems, so designers, test labs, quality teams and buyers can assess conducted emission, radiated emission, immunity, impulse response and ESD behavior under defined network conditions.

What does prEN IEC 62228-5:2026 specify?

prEN IEC 62228-5:2026 specifies EMC test and measurement methods for Ethernet transceiver ICs under network condition. The document is written for transceivers used in several Ethernet systems and it combines general test rules with system-specific annexes, so the same framework can be applied while still allowing different pinouts, modes and interface networks.

The scope covers transceivers for:

• 10BASE-T1S
• 100BASE-T1
• 100BASE-TX
• 1000BASE-T1
• 2.5GBASE-T1, 5GBASE-T1 and 10GBASE-T1
• 1000BASE-RH

It addresses emission of RF disturbances, immunity to RF disturbances, immunity to impulses, and immunity to electrostatic discharges (ESD).

The document is organized into:

• Clause 1 Scope
• Clause 2 Normative references
• Clause 3 Terms, definitions and abbreviated terms
• Clause 4 General
• Clause 5 Test and operating conditions
• Clause 6 Test and measurement
• Clause 7 Test report
• Annexes A to F for Ethernet-system-specific definitions and requirements
• Annex G for test circuits
• Annex H for test circuit boards
• Annex I for recommended automotive limits
• Annex J for characterization of common mode chokes (CMC)
• Annex K for characterization of ESD suppression devices

Annex	What it covers
A	10BASE-T1S transceiver
B	100BASE-T1 application
C	1000BASE-T1 application
D	2.5GBASE-T1, 5GBASE-T1 and 10GBASE-T1 application
E	Ethernet transceivers with support for more than one Ethernet system
F	1000BASE-RH transceiver
G	Test circuits for functional and unpowered tests
H	Test circuit boards
I	Recommended limits for automotive application
J	CMC characterization
K	ESD suppression device characterization

What are the key requirements of prEN IEC 62228-5:2026?

prEN IEC 62228-5:2026 requires EMC evaluation to be carried out on Ethernet transceivers in application-like conditions, using a minimal network and the test arrangements defined in the document. Clause 4 makes clear that the main aim is to evaluate EMC performance on dedicated pins that are relevant to the application, and to do so in a way that supports repeatable comparison between parts.

The main practical requirement is to test the implemented functional operation modes. For conducted RF emission, conducted RF immunity, impulse immunity and powered ESD, the transceiver is tested under network condition. For unpowered ESD, the document uses a single transceiver IC on a separate board. That distinction matters because the setup for a live network and the setup for a damage-oriented ESD check are not the same.

Test conditions and operating modes

Clause 5 defines the supply and ambient conditions, the test operation modes, the BIN, the test configuration, the test communication and signals, and the evaluation criteria. In practice, this is where the user decides how the DUT is powered, which functional mode is active, how the link is exercised, and how failures are judged.

The document requires functional operation modes to be covered according to the type-specific annexes. It also distinguishes between normal operation mode and low power mode. This matters because wake-up behavior, sleep behavior and normal data operation can respond differently to disturbances.

Test methods and setups

Clause 6 assigns a specific test method to each EMC concern:

• conducted RF emission uses 150 Ω direct coupling
• conducted RF immunity uses direct RF power injection (DPI)
• impulse immunity uses non-synchronous transient injection
• radiated RF emission uses IC stripline or GTEM-cell methods
• radiated RF immunity uses IC stripline or GTEM-cell methods
• ESD uses contact discharge methods from ISO 10605

The document also specifies the associated test setups, parameters and procedures. For the user, that means the measurement method, cabling, coupling ports, equipment and board construction are not left to local preference when the standard is being applied.

Evaluation criteria and failure checking

Clause 5 and Clause 6 require evaluation against defined failure criteria and status classes. For functional operation modes, the tests look for malfunction while the disturbance level is stepped. For some cases, the document asks for an immunity threshold curve to be determined and documented. For other cases, the DUT is tested at defined levels and the functional status is checked after each test.

This matters in practice because the standard is not only about whether a device survives a stress event. It also asks whether the transceiver still works in the required mode, and whether any link error, CRC error, wake-up issue or similar malfunction appears.

Board and network construction

Clause 4 states that the document is based on a minimal Ethernet test network, typically made up of the DUT and an Ethernet link partner of the same type for radiated tests and functional testing. Annex G gives the general test circuits, and Annex H gives the test circuit boards. The document also notes that soldered transceivers on special test boards should be used to avoid socket-related effects.

That is important because EMC results can change when the interface network, the filter elements or the board layout changes. The document therefore also includes different BIN concepts and allows filter effects at the MDI interface to be taken into account when interpreting results.

Type-specific annexes and multiple-system devices

Annexes A to F add the Ethernet-system-specific definitions, test requirements and in some cases proposed limits. If a transceiver supports more than one Ethernet system, each implemented system is tested separately. That matters for multi-mode devices because one PHY can behave differently in each supported system.

Reporting

Clause 7 sets the content expected in the test report. It calls for the schematic diagram of the test configuration, the failure criteria used, pictures or drawings of the test boards, the transfer characteristics of coupling and decoupling networks, the equipment description, the software configuration, any deviation from the defined parameters, and the test results. In practice, this gives the reader enough evidence to repeat or review the EMC evaluation.

Annex I adds recommended limits for automotive application, which is useful when the transceiver is intended for vehicle electronics. Annexes J and K go further and characterize parts used in the interface network, such as CMCs and ESD suppression devices, so the EMC behavior of the full interface can be understood as well as the transceiver itself.

What terms does prEN IEC 62228-5:2026 define?

prEN IEC 62228-5:2026 uses several key terms and abbreviations that matter for reading the test conditions and annexes.

• DUT - device under test, meaning the Ethernet transceiver IC being evaluated.
• BIN - the interface network defined for the MDI path, used to set the test condition and include filter or suppression elements.
• MDI - the medium dependent interface, meaning the Ethernet line-side connection of the transceiver.
• CMC - common mode choke, a line component whose parasitic capacitance, mixed-mode behavior and ESD response are characterized in Annex J.
• ESD - electrostatic discharge, the discharge event used for powered and unpowered robustness testing.
• DPI - direct RF power injection, the conducted RF immunity method used in Clause 6.
• FOT - fiber optic transceiver, used in the 1000BASE-RH annex for optical transceiver testing.
• TLP - transmission line pulse, used in Annex J to assess saturation behavior under ESD-related stress.

Who uses prEN IEC 62228-5:2026?

prEN IEC 62228-5:2026 is used by IC designers, EMC test laboratories, validation engineers, semiconductor suppliers, automotive electronics teams, and quality or purchasing teams that need a common way to judge Ethernet transceiver EMC behavior.

Designers and suppliers use it to build the right test network, choose the operating mode and interpret EMC results for a PHY or embedded transceiver cell. Test labs use it to set up the measurement equipment, boards and failure criteria consistently. Quality and buyer teams use it when they need a clear basis for comparing candidate parts, especially for Ethernet transceivers intended for automotive or other demanding applications.

What changed in prEN IEC 62228-5:2026 from the previous edition?

prEN IEC 62228-5:2026 supersedes 47A/1211/CD and 47A/1219A/CC.

Which standards are used with prEN IEC 62228-5:2026?

prEN IEC 62228-5:2026 relies on these normative references and companion documents:

• IEC 61967-1 - general conditions and definitions for integrated circuit emission measurements.
• IEC 61967-2 - radiated emission measurement by TEM cell and wideband TEM cell.
• IEC 61967-4 - conducted emission measurement by 1 ohm/150 ohm direct coupling.
• IEC 61967-8 - radiated emission measurement by IC stripline.
• IEC 62132-1 - general conditions and definitions for IC immunity measurements.
• IEC 62132-2 - radiated immunity measurement by TEM cell and wideband TEM cell.
• IEC 62132-4 - direct RF power injection method for conducted immunity.
• IEC 62132-8 - radiated immunity measurement by IC stripline.
• IEC 62215-3 - non-synchronous transient injection method for impulse immunity.
• IEC 62228-1 - general conditions and definitions for EMC evaluation of transceivers.
• ISO 7637-2 - electrical transient conduction along supply lines, used as the basis for impulse-related testing.
• ISO/IEC/IEEE 8802-3 - Ethernet physical-layer requirements for the covered Ethernet systems.
• ISO/IEC/IEEE 8802-3:2021/AMD 5:2021 - specifically named for 10BASE-T1S.
• ISO 10605 - electrostatic discharge test methods for road vehicles.
• CISPR 16-1-1 - measuring apparatus and methods for EMC disturbance and immunity measurements.
• EIA-198-1 - ceramic dielectric capacitor classes, used where capacitors are specified.
• IEC 62615 - transmission line pulse testing, used in the CMC saturation work in Annex J.

These references matter because they supply the measurement fundamentals, source standards and test equipment rules that the Ethernet-specific document builds on.

What does the prEN IEC 62228-5:2026 document contain?

The document contains the general EMC evaluation framework, the test and operating condition definitions, and the detailed emission, immunity and ESD procedures. It also contains figures showing the test setups, schematics for the test circuits, and board-level layouts for functional and ESD testing.

Annex G and Annex H provide the practical circuit and board drawings used for electrical and optical Ethernet transceivers, including single-transceiver and networked configurations. Annex I provides recommended automotive limits, while Annex J and Annex K add component-level characterization methods for CMCs and ESD suppression devices.

Those annexes include procedures for parasitic capacitance measurement, mixed-mode S-parameter measurement, ESD damage checks, RF saturation checks, TLP-based saturation, TDR measurement, and RF clamping checks. In practice, they are used for design verification, EMC debugging, component selection and documenting the EMC behavior of the interface network around the transceiver.

SLOVENSKI STANDARD
01-november-2026
Integrirana vezja - Vrednotenje elektromagnetne združljivosti (EMC) oddajnikov-
sprejemnikov - 5. del: Ethernet oddajniki-sprejemniki
Integrated circuits - EMC evaluation of transceivers - Part 5: Ethernet transceivers
Integrierte Schaltungen - Bewertung der elektromagnetischen Verträglichkeit von Sende-
Empfangsgeräten - Teil 5: Ethernet-Sende-Empfangsgerät
Circuits intégrés - Evaluation de la CEM des émetteurs-récepteurs - Partie 5: Emetteurs-
récepteurs ethernet
Ta slovenski standard je istoveten z: prEN IEC 62228-5:2026
ICS:
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
33.100.01 Elektromagnetna združljivost Electromagnetic compatibility
na splošno in general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

47A/1226/CDV
COMMITTEE DRAFT FOR VOTE (CDV)

PROJECT NUMBER:
IEC 62228-5 ED2
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2026-10-02 2026-12-25
SUPERSEDES DOCUMENTS:
47A/1211/CD, 47A/1219A/CC
IEC SC 47A : INTEGRATED CIRCUITS
SECRETARIAT: SECRETARY:
Japan Mr Yoshinori FUKUBA
OF INTEREST TO THE FOLLOWING COMMITTEES: HORIZONTAL FUNCTION(S):

ASPECTS CONCERNED:
Electromagnetic Compatibility
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
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CENELEC, is drawn to the fact that this Committee Draft
for Vote (CDV) is submitted for parallel voting.
The CENELEC members are invited to vote through the
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This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of
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Recipients of this document are invited to submit, with their comments, notification of any relevant “In Some
Countries” clauses to be included should this proposal proceed. Recipients are reminded that the CDV stage is
the final stage for submitting ISC clauses. (SEE AC/22/2007 OR NEW GUIDANCE DOC).

TITLE:
Integrated circuits - EMC evaluation of transceivers - Part 5: Ethernet transceivers

PROPOSED STABILITY DATE: 2032
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IEC CDV 62228-5 ED2 © IEC 2026

CONTENTS
CONTENTS . 1
FOREWORD . 14
1 Scope . 16
2 Normative references . 16
3 Terms, definitions and abbreviated terms . 17
3.1 Terms and definitions. 17
3.2 Abbreviated terms . 18
4 General . 20
5 Test and operating conditions . 21
5.1 Supply and ambient conditions . 21
5.2 Test operation modes . 22
5.2.1 General . 22
5.2.2 Transceiver configuration for normal operation mode . 22
5.2.3 Transceiver configuration for low power mode . 22
5.3 Definition of BIN. 22
5.4 Test configuration . 24
5.4.1 General configuration for transceiver network . 24
5.4.2 General configuration for single transceiver . 26
5.4.3 Transceiver network tests - coupling ports and networks for conducted
tests . 26
5.4.4 Single transceiver tests - coupling ports and networks . 28
5.5 Test communication and signals . 29
5.5.1 General . 29
5.5.2 Test signals for normal operation mode . 30
5.5.3 Test signals for low power mode . 30
5.6 Evaluation criteria . 30
5.6.1 General . 30
5.6.2 Evaluation criteria for functional operation modes . 30
5.6.3 Evaluation criteria in unpowered condition after exposure to
disturbances . 31
5.6.4 Status classes . 32
5.7 DUT specific information . 32
6 Test and measurement . 33
6.1 Emission of conducted RF disturbances . 33
6.1.1 Test method . 33
6.1.2 Test setup . 33
6.1.3 Test procedure and parameters . 34
6.2 Immunity to conducted RF disturbances . 34
6.2.1 Test method . 34
6.2.2 Test setup . 34
6.2.3 Test procedure and parameters . 35
6.3 Immunity to impulses . 37
6.3.1 Test method . 37
6.3.2 Test setup . 37
6.3.3 Test procedure and parameters . 38
6.4 Emission of radiated RF disturbances . 39
6.4.1 Test method . 39
IEC CDV 62228-5 ED2 © IEC 2026

6.4.2 Test setup . 39
6.4.3 Test procedure and parameters . 40
6.5 Immunity to radiated RF disturbances . 40
6.5.1 Test method . 40
6.5.2 Test setup . 40
6.5.3 Test procedure and parameters . 42
6.6 Electrostatic Discharge (ESD) . 43
6.6.1 Test method . 43
6.6.2 Test setup . 43
6.6.3 Test procedure and parameters . 49
7 Test report . 50
Annex A (normative) Specific test definitions and requirements for 10BASE-T1S
transceiver . 51
A.1 General . 51
A.2 Test operation modes . 51
A.3 BIN definition . 51
A.4 Test configuration . 52
A.5 Coupling ports and networks for conducted tests . 53
A.6 Test communication and signals . 55
A.7 Evaluation criteria for functional operation modes . 56
A.8 Test setups and requirements . 59
A.8.1 Conducted RF emission . 59
A.8.2 Conducted RF immunity. 60
A.8.3 Transient immunity . 63
A.8.4 Radiated RF emission . 64
A.8.5 Radiated RF immunity . 64
A.8.6 ESD . 65
Annex B (normative) Specific test definitions and requirements for 100BASE-T1
transceiver . 66
B.1 General . 66
B.2 Test operation modes . 66
B.3 BIN definition . 66
B.4 Test configuration . 66
B.5 Coupling ports and networks for conducted tests . 67
B.6 Test requirements . 67
B.6.1 Conducted RF emission . 67
B.6.2 Conducted RF immunity. 68
B.6.3 Transient immunity . 70
B.6.4 Radiated RF emission . 71
B.6.5 Radiated RF immunity . 71
B.6.6 ESD . 72
Annex C (normative) Specific test definitions and requirements for 100BASE-TX
transceiver . 73
C.1 General . 73
C.2 Test operation modes . 73
C.3 BIN definition . 73
C.4 Test configuration . 73
C.5 Coupling ports and networks for conducted tests . 73
C.6 Test requirements . 74
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C.6.1 Conducted RF emission . 74
C.6.2 Conducted RF immunity. 75
C.6.3 Transient immunity . 76
C.6.4 Radiated RF emission . 77
C.6.5 Radiated RF immunity . 78
C.6.6 ESD . 78
Annex D (normative) Specific test definitions and requirements for 1000BASE-T1
transceiver . 80
D.1 General . 80
D.2 Test operation modes . 80
D.3 BIN definition . 80
D.4 Test configuration . 80
D.5 Coupling ports and networks for conducted tests . 81
D.6 Test requirements . 81
D.6.1 Conducted RF emission . 82
D.6.2 Conducted RF immunity. 82
D.6.3 Transient immunity . 84
D.6.4 Radiated RF emission . 85
D.6.5 Radiated RF immunity . 86
D.6.6 ESD . 86
Annex E (normative) Specific test definitions and requirements for 2.5G/5G/10GBASE-
T1 transceiver . 88
E.1 General . 88
E.2 Test operation modes . 88
E.3 BIN definition . 88
E.4 Test configuration . 88
E.5 Coupling ports and networks for conducted tests . 89
E.6 Test requirements . 89
E.6.1 Conducted RF emission . 89
E.6.2 Conducted RF immunity. 90
E.6.3 Transient immunity . 92
E.6.4 Radiated RF emission . 93
E.6.5 Radiated RF immunity . 93
E.6.6 ESD . 94
Annex F (normative) Specific test definitions and requirements for 1000BASE-RH
transceiver . 95
F.1 General . 95
F.2 Test operation modes . 95
F.3 BIN definition . 96
F.4 Test configuration . 96
F.5 Coupling ports and networks for conducted tests . 99
F.6 Test communication and signals . 99
F.7 Evaluation criteria for functional operation modes . 99
F.8 Test requirements . 99
F.8.1 Conducted RF emission . 99
F.8.2 Conducted RF immunity. 100
F.8.3 Transient immunity . 101
F.8.4 Radiated RF emission . 102
F.8.5 Radiated RF immunity . 103
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F.8.6 ESD . 104
Annex G (normative) Ethernet test circuits . 105
G.1 General . 105
G.2 Test circuit for electrical Ethernet transceivers for functional tests . 105
G.2.1 Test circuit for Ethernet transceivers for conducted functional tests . 105
G.2.2 Test circuit for Ethernet transceivers for radiated functional tests . 112
G.3 Test circuit for optical Ethernet transceiver tests . 113
G.3.1 Test circuit for optical Ethernet transceivers for conducted functional
tests . 113
G.3.2 Test circuit for optical Ethernet transceivers for conducted and radiated
functional tests . 115
G.3.3 Test circuit for stand-alone FOT tests . 116
G.4 Test circuit for Ethernet transceivers for unpowered ESD test . 117
Annex H (normative) Test circuit boards . 120
H.1 General . 120
H.2 Test circuit board for electrical Ethernet transceivers for functional tests . 120
H.2.1 Test circuit board for conducted functional tests of electrical Ethernet
transceiver. 120
H.2.2 Test circuit board for radiated functional tests of electrical Ethernet
transceiver. 124
H.3 Test circuit board for optical Ethernet transceiver for functional tests . 126
H.3.1 Test circuit board for optical Ethernet transceivers for conducted
functional tests . 126
H.3.2 Test circuit board for optical Ethernet transceivers for conducted and
radiated functional tests. 126
H.3.3 Test circuit board for stand-alone FOT tests . 127
H.4 Test circuit board for single transceiver configuration. 127
Annex I (informative) Examples for test limits for Ethernet transceiver in automotive
application . 129
I.1 General . 129
I.2 Emission of conducted RF disturbances . 129
I.3 Immunity to conducted RF disturbances . 131
I.4 Immunity to impulses . 134
I.5 Emission of radiated RF disturbances . 134
I.6 Immunity to radiated RF disturbances . 135
Annex J (informative) Characterization of common mode chokes for EMC evaluation of
Ethernet transceivers . 137
J.1 General . 137
J.2 Recommended tests . 137
J.2.1 General . 137
J.2.2 Measurement of parasitic capacitance . 138
J.2.3 142
J.2.4 Mixed mode S-parameter measurement . 142
J.2.5 ESD damage . 149
J.2.6 Saturation test at RF disturbances . 152
J.2.7 Saturation test at ESD . 155
J.2.8 TDR measurement of differential mode impedance . 159
Annex K (informative) Characterization of ESD suppression devices for EMC
evaluation of Ethernet transceivers . 161
K.1 General . 161
IEC CDV 62228-5 ED2 © IEC 2026

K.2 Recommended tests . 162
K.2.1 General . 162
K.2.2 Measurement of parasitic capacitance . 162
K.2.3 Mixed mode S-parameter measurement . 166
K.2.4 ESD damage . 172
K.2.5 ESD discharge current measurement . 175
K.2.6 Test of unwanted clamping effect at RF immunity tests . 180
Bibliography . 184

Figure 1 – Minimum MDI interface test network (Min-BIN) . 23
Figure 2 – Standard MDI interface test network (Std-BIN) . 23
Figure 3 – Optimized MDI interface test network (Opt-BIN) . 23
Figure 4 – General test configuration for tests in transceiver network for conducted
tests . 24
Figure 5 – General test configuration for tests in transceiver network for radiated tests . 25
Figure 6 – General test configuration for unpowered ESD test . 26
Figure 7 – Transceiver network tests - coupling ports and networks . 27
Figure 8 – Coupling ports and networks for unpowered ESD tests . 29
Figure 9 – Principle drawing of the maximum deviation on an I-V characteristic . 32
Figure 10 – Test setup for measurement of conducted RF disturbances. 33
Figure 11 – Test setup for DPI tests . 35
Figure 12 – Test setup for impulse immunity tests . 37
Figure 13 – Test setup for measurement of radiated RF emission . 39
Figure 14 – Test setup for radiated RF immunity tests . 41
Figure 15 – Test setup for powered ESD tests - principle arrangement . 44
Figure 16 – Test setup for powered ESD tests - stimulation and monitoring . 45
Figure 17 – Test setup for unpowered ESD tests - principle arrangement . 46
Figure 18 – Test setup for unpowered ESD tests - stimulation and monitoring for
function validation pre and post ESD test . 48
Figure A.1 – General test configuration for 10BASE-T1S transceiver tests in
transceiver network for conducted tests . 53
Figure A.2 – Transceiver network tests - CP1 coupling ports and network definition for
10BASE-T1S transceiver . 54
Figure A.3 – Test communication signal combination TX-PMD1 for 10BASE-T1S PMD
transceiver emission tests . 56
Figure A.4 – Combined test signal definition TX-PMD2 for 10BASE-T1S PMD
transceiver immunity tests . 56
Figure A.5 – Test setup for DPI distortion test . 60
Figure F.1 – Arrangement of 1000BASE-RH transceiver IC and a separate FOT . 95
Figure F.2 – Arrangement of 1000BASE-RH transceiver IC with an integrated FOT . 95
Figure F.3 – Alternative test configuration for tests of 1000BASE-RH transceivers in
transceiver network using POF for conducted and radiated tests . 96
Figure F.4 – General test configuration for stand-alone FOT tests . 97
Figure F.5 – Test setup for standalone FOT test . 98
Figure G.1 – General drawing of the circuit diagram of test network for xBASE-T1
Ethernet transceivers for functional test using conducted test methods . 107
IEC CDV 62228-5 ED2 © IEC 2026

Figure G.2 – General drawing of the circuit diagram of test network for 10BASE-T1S
PMD Ethernet transceivers for functional test using conducted test methods . 110
Figure G.3 – General drawing of the circuit diagram of test network for 100BASE-TX
Ethernet transceivers for functional test using conducted test methods . 111
Figure G.4 – General drawing of the circuit diagram of test network for xBASE-T1
Ethernet transceivers for functional test using radiated RF test methods . 112
Figure G.5 – General drawing of the circuit diagram of test network for 1000BASE-RH
Ethernet transceivers for functional test using conducted test methods . 114
Figure G.6 – General drawing of the circuit diagram of alternative test network for
1000BASE-RH Ethernet transceivers for functional test using conducted and radiated
test methods . 116
Figure G.7 – General drawing of the circuit diagram stand-alone FOT tests . 117
Figure G.8 – General drawing of the circuit diagram for ESD tests of xBASE-T1
Ethernet transceiver in unpowered mode . 118
Figure H.1 – Example of functional conducted test board for Ethernet transceiver ICs
up to 1 Gbit/s communication rate (100BASE-T1) . 120
Figure H.2 – Example of functional conducted test board for Ethernet transceiver ICs
with more than 1 Gbit/s communication rate (10GBASE-T1) . 121
Figure H.3 – Example of return loss for functional conducted test board for Ethernet
transceiver ICs with more than 1 Gbit/s communication rate (10GBASE-T1) . 122
Figure H.4 – Example of insertion loss for functional conducted test board for Ethernet
transceiver ICs with more than 1 Gbit/s communication rate (10GBASE-T1) . 122
Figure H.5 – Example of CP1 common mode coupling function for functional conducted
test board for Ethernet transceiver ICs with more than 1 Gbit/s communication rate
(10GBASE-T1) . 123
Figure H.6 – Example of powered ESD test board for Ethernet transceivers ICs
(100BASE-T1) . 124
Figure H.7 – Example of functional radiated test board for Ethernet transceiver ICs
(100BASE-T1), top layer (DUT side) . 125
Figure H.8 – Example of functional radiated test board for Ethernet transceiver ICs
(100BASE-T1), bottom layer (external circuitry side) . 125
Figure H.9 – Example of functional conducted test board for optical Ethernet
transceivers (1000BASE-RH) . 126
Figure H.10 – Example of functional radiated test board for optical Ethernet
transceivers (1000BASE-RH), top layer (left, DUT side) and bottom layer (right,
component side) . 127
Figure H.11 – Example of test board for stand-alone FOT tests . 127
Figure H.12 – Example of unpowered ESD test board for Ethernet transceivers ICs
(100BASE-T1), top layer . 128
Figure H.13 – Example of unpowered ESD test board for Ethernet transceivers ICs
(100BASE-T1), bottom layer . 128
Figure I.1 – Example of limits for conducted RF emission - Limit group EMI1-GP -
global pins including MDI . 129
Figure I.2 – Example of limits for conducted RF emission - Limit group EMI2-GP-
global pins that are connected to shielded cables in the application (MDI) . 130
Figure I.3 – Example of limits for conducted RF emission - Limit group EMI1-LS - local
supplies . 130
Figure I.4 – Example of limits for conducted RF immunity for functional status class A
IC
- limit group RF-MDI1-A - MDI. 131
IEC CDV 62228-5 ED2 © IEC 2026

Figure I.5 – Example of limits for conducted RF immunity for functional status class A
IC
- limit group RF-MDI2-A - global pins that are connected to shielded cables in the
application (MDI) . 132
Figure I.6 – Example of limits for conducted RF immunity for functional status class A
IC
- limit group RF-GP1-A - global pins . 132
Figure I.7 – Example of limits for conducted RF immunity for functional status class C
IC
or D - limit group RF-MDI1-C - MDI . 133
IC
Figure I.8 – Example of limits for conducted RF immunity for functional status class C
IC
or D - limit group RF-MDI2-C - global pins that are connected to shielded cables in
IC
the application MDI . 133
Figure I.9 – Example of limits for conducted RF immunity for functional status class C
IC
or D - limit group RF-GP1-C - global pins . 134
IC
Figure I.10 – Example of limits for radiated RF emission for IC stripline with 6,7 mm
active conductor height - limit group RE1 . 135
Figure I.11 – Example of limits for radiated RF immunity - limit group RI1 . 136
Figure J.1 – General electrical drawing of a CMC . 137
Figure J.2 – Test setup for parasitic capacitance of CMC measurement using the VNA
method . 138
Figure J.3 – Example of test board for CMC parasitic capacitance measurement for
VNA method, top layer . 139
Figure J.4 – Port definitions for CMC VNA measurement circuit . 140
Figure J.5 – Test setup for parasitic capacitance measurement of CMC for LCR meter
or impedance analyser method . 140
Figure J.6 – LCR or impedance analyser measurement circuit for CMC . 141
Figure J.7 – Example of parasitic capacitance measurement results for CMC . 142
Figure J.8 – Test setup for S-parameter measurements at CMC . 142
Figure J.9 – Example of test board for 4-port S-parameter measurement of a CMC -
mixed mode, top layer . 143
Figure J.10 – Example of test board for 3-port S-parameter measurement of a CMC -
mixed mode, top layer . 143
Figure J.11 – Port definition for CMC 3-port test board characterization . 144
Figure J.12 – . 144
Figure J.13 – Port definition for 4-port mixed mode measurements . 145
Figure J.14 – Port definition for 3-port mixed mode measurements . 146
Figure J.15 – Recommended characteristics for S , S (RL) for CMC . 147
dd11 dd22
Figure J.16 – Recommended characteristics for S (IL) for CMC . 147
dd21
Figure J.17 – Recommended characteristics for S (CMR) for CMC. 148
cc21
Figure J.18 – Recommended characteristics for S , S (LCL) for CMC . 148
dc11 dc22
Figure J.19 – Recommended characteristics for S , S (DCMR) and S , S
sd21 sd12 ds21 ds12
(CDMR) for CMC . 149
Figure J.20 – Test setup for ESD damage tests at CMC . 150
Figure J.21 – Example of ESD test board for CMC, top layer . 151
Figure J.22 – Test circuit for ESD damage tests of a CMC . 152
Figure J.23 – Test setup for RF saturation measurements at CMC . 153
Figure J.24 – Example of RF saturation / S-parameter test board for CMC, top layer . 154
IEC CDV 62228-5 ED2 © IEC 2026

Figure J.25 – Test circuit for RF saturation tests at CMC . 154
Figure J.26 – Recommended test power levels for RF saturation tests of CMC . 155
Figure J.27 – Test setup for ESD saturation measurements at CMC . 156
Figure J.28 – Example of ESD saturation test board for CMC, top layer . 157
Figure J.29 – Test circuit for ESD saturation tests of a CMC . 157
Figure J.30 – Definition for TLP pulse reference time t . 158
Figure J.31 – Example of ESD saturation tests results of different CMCs . 159
Figure J.32 – Test setup for TDR measurement of a CMC . 159
Figure J.33 – Example of TDR test board for CMC, top layer . 160
Figure J.34 – TDR measurement test circuit for CMC . 160
Figure K.1 – Arrangement of ESD suppression device within the 10BASE-T1S,
100BASE-T1 and 1000BASE-T1 MDI interface . 162
Figure K.2 – Test setup for parasitic capacitance measurement for the VNA method . 163
Figure K.3 – Example of test board parasitic capacitance measurement for the VNA
method, top layer . 164
Figure K.4 – VNA measurement circuit for ESD suppression device . 165
Figure K.5 – Test setup for parasitic capacitance measurement for LCR meter or
impedance analyser method . 165
Figure K.6 – LCR or impedance analyser measurement circuit for ESD suppression
device . 166
Figure K.7 – Test setup for S-parameter measurements at ESD suppression device . 167
Figure K.8 – Example of 4-port S-parameter test board for measurement of ESD
suppression device, top layer . 168
Figure K.9 – Example of 3-port S-parameter test board for measurement of ESD
suppression device , top layer . 168
Figure K.10 – Port definition for ESD suppression device 3-port test board . 169
Figure K.11 – Requirement for 3-port ESD device fixture . 169
Figure K.12 – Port definition for 4-port measurements of ESD suppression device . 170
Figure K.13 – Port definition for 3-port measurements of ESD suppression device . 170
Figure K.14 – Recommended characteristics for S (RL) for ESD suppression device . 171
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