IEC 60747-4-1:2000

Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification

General Information

• Status: Withdrawn
• Publication Date: 15-Jun-2000
• Withdrawal Date: 14-Dec-2006
• ICS: 31.080.30 - Transistors
• Technical Committee: SC 47E - Discrete semiconductor devices
• Current Stage: WPUB - Publication withdrawn
• Completion Date: 06-Oct-2006

Standards Content (Sample)

INTERNATIONAL IEC
STANDARD
60747-4-1
QC 750115
First edition
2000-06
Semiconductor devices – Discrete devices –
Part 4-1:
Microwave diodes and transistors –
Microwave field effect transistors –
Blank detail specification
Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4-1:
Diodes et transistors hyperfréquences –
Transistors hyperfréquences à effet de champ –
Spécification particulière-cadre

Reference number
Numbering
As from 1 January 1997 all IEC publications are issued with a designation in the
60000 series.
Consolidated publications
Consolidated versions of some IEC publications including amendments are

available. For example, edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the
base publication, the base publication incorporating amendment 1 and the base

publication incorporating amendments 1 and 2.

Validity of this publication
The technical content of IEC publications is kept under constant review by the IEC,
thus ensuring that the content reflects current technology.
Information relating to the date of the reconfirmation of the publication is available
in the IEC catalogue.
Information on the subjects under consideration and work in progress undertaken
by the technical committee which has prepared this publication, as well as the list
of publications issued, is to be found at the following IEC sources:
• IEC web site*
•
Catalogue of IEC publications
Published yearly with regular updates
(On-line catalogue)*
• IEC Bulletin
Available both at the IEC web site* and as a printed periodical
Terminology, graphical and letter symbols
For general terminology, readers are referred to IEC 60050: International
Electrotechnical Vocabulary (IEV).
For graphical symbols, and letter symbols and signs approved by the IEC for
general use, readers are referred to publications IEC 60027: Letter symbols to be
used in electrical technology, IEC 60417: Graphical symbols for use on equipment.
Index, survey and compilation of the single sheets and IEC 60617: Graphical symbols
for diagrams.
* See web site address on title page.

INTERNATIONAL IEC
STANDARD
60747-4-1
QC 750115
First edition
2000-06
Semiconductor devices – Discrete devices –
Part 4-1:
Microwave diodes and transistors –
Microwave field effect transistors –
Blank detail specification
Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4-1:
Diodes et transistors hyperfréquences –
Transistors hyperfréquences à effet de champ –
Spécification particulière-cadre

 IEC 2000  Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission 3, rue de Varembé Geneva, Switzerland
Telefax: [phone] e-mail: [e-mail] IEC web site http://www.iec.ch
Commission Electrotechnique Internationale
PRICE CODE
Q
International Electrotechnical Commission
For price, see current catalogue

– 2 – 60747-4-1 © IEC:2000(E)
INTERNATIONAL ELECTROTECHNICAL COMMISSION

____________
SEMICONDUCTOR DEVICES – DISCRETE DEVICES –

Part 4-1: Microwave diodes and transistors –

Microwave field effect transistors – Blank detail specification

FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International Organization
for Standardization (ISO) in accordance with conditions determined by agreement between the two
organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-4-1 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/145/FDIS 47E/154/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.
Annex A forms an integral part of this standard.
The QC number that appears on the front cover of this publication is the specification number
in the IEC Quality Assessment System for Electronic Components (IECQ).

60747-4-1  IEC:2000(E) – 3 –
Other IEC publications quoted in this standard:

Publication Nos. IEC 60191-2:1966, Mechanical standardization of semiconductor devices – Part 2:

Dimensions
IEC 60747-8-1:1987, Semiconductor devices – Discrete devices – Part 8: Field-

effect transistors – Section One: Blank detail specification for single-gate field-effect

transistors up to 5 W and 1 GHz

IEC 60747-10:1991, Semiconductor devices – Part 10: Generic specification for

discrete devices and integrated circuits

IEC 70747-11:1985, Semiconductor devices – Part 11: Sectional specification for

discrete devices
IEC 60749:1996, Semiconductor devices – Mechanical and climatic test methods
The committee has decided that the contents of this publication will remain unchanged until
2005. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
A bilingual version of this standard may be issued at a later date.

– 4 – 60747-4-1 © IEC:2000(E)
SEMICONDUCTOR DEVICES – DISCRETE DEVICES –

Part 4-1: Microwave diodes and transistors –

Microwave field effect transistors – Blank detail specification

INTRODUCTION
The IEC Quality Assessment for Electronic Components is operated in accordance with the

statutes of the IEC and under the authority of the IEC. The object of this system is to define
quality assessment procedures in such a manner that electronic components released by one
participating country as conforming with the requirements of an applicable specification are
equally acceptable in all other participating countries without the need for further testing.
This blank detail specification is one of a series of blank detail specifications for semiconductor
devices and shall be used with the following IEC publications:
– 60747-10/QC 700000: Semiconductor devices – Part 10: Generic specification for discrete
devices and integrated circuits.
– 60747-11/QC 750100: Semiconductor devices – Part 11: Sectional specification for discrete
devices.
Required information
Numbers shown in square brackets on this and the following pages correspond to the following
items of required information, which shall be entered in the spaces provided.
Identification of the detail specification
[1] The name of the National Standards Organization under whose authority the detail
specification is issued.
[2] The IECQ number of the detail specification.
[3] The numbers and issue numbers of the generic and sectional specifications.
[4] The national number of the detail specification, date of issue and any further information
required by the national system.
Identification of the component
[5] Type of component.
[6] Information on typical construction and applications. If a device is designed to satisfy

several applications, this shall be stated here. Characteristics, limits and inspection
requirements for these applications shall be met.
If a device is electrostatic sensitive, or contains hazardous materials, for example beryllium
oxide, a caution statement shall be added in the detail specification.
[7] Outline drawing and/or reference to the relevant standard for outlines.
[8] Category of assessed quality.
[9] Reference data on the most important properties to permit comparison between component
types.
……………………………………………………………………………………………………………….
[Throughout this standard, the texts given in square brackets are intended for guidance to the
specification writer and shall not be included in the detail specification.]
[Throughout this standard, when a characteristic or rating applies, "X" denotes that a value
shall be inserted in the detail specification.]

60747-4-1  IEC:2000(E) – 5 –
[Name (address) of responsible NAI [1] [Number of IECQ detail specification, [2]

(and possibly of body from which specification plus issue number and/or date.]

is available.]
QC 750115
ELECTRONIC COMPONENT OF ASSESSED [3] National number of detail specification. [4]

QUALITY IN ACCORDANCE WITH
Generic specification:
[This box need not be used if national number
Publication IEC 60747-10/QC 700000
repeats IECQ number.]
Sectional specification:
Publication IEC 60747-11/QC 750000

[and national references if different.]
BLANK DETAIL SPECIFICATION FOR MICROWAVE FIELD EFFECT TRANSISTORS [5]
[Type number(s) of the relevant device(s).]
Ordering information: see clause 7 of this standard.
1 Mechanical description 2 Short description
Outline references: [7] Microwave field effect transistors [6]
IEC 60191-2 . [mandatory if available] and/or
national [if there is no IEC outline.]
Semiconductor material: [GaAs]
Encapsulation: [cavity or non-cavity].
Outline drawing:
[may be transferred to or given with more details in
Application(s): see clause 5 of this standard.
clause 10 of this standard.]
Caution: Observe precautions for handling
ELECTROSTATIC SENSITIVE DEVICES.
Terminal identification
[if applicable]
[drawing showing pin assignments, including graphical
symbols.]
Marking:
3 Categories of assessed quality
[letters and figures, or colour code.]
[from 2.6 of the generic specification.] [8]
[The detail specification shall prescribe the information to
be marked on the device, if any]
[See 2.5 of generic specification and/or clause 6 of this Reference data [9]
standard.]
[Polarity indication, if special method is used.]
Information about manufacturers who have components qualified to this detail specification is available in the
current Qualified Products List.

– 6 – 60747-4-1 © IEC:2000(E)
4 Limiting values (absolute maximum rating system)

common to all applications
These values apply over the operating temperature range, unless otherwise specified.

[Repeat only subclause numbers used, with title. Any additional values shall be given at the

appropriate place, but without subclause number(s).]

[Curves should preferably be given under clause 10 of this standard.]

Categories type A: power device
Categories type B: low-noise device
Sub- Limiting values Letter symbols Type A Type B
clause
Min. Max. Min. Max.
4.1 Ambient or case temperature T × × × ×
amb/case
4.2 Storage temperature T
stg × × × ×
4.3 Drain-source voltage under V or V or
DSX DSS
× ×
specified conditions
V
DSR
4.4 Gate-source reverse voltage
V
GSR
× ×
4.5 Gate-drain voltage with source V
GDO
× ×
open-circuited
4.6 Drain current
I
D
× ×
4.7 Channel temperature
T or T
ch j
× ×
4.8 Total power dissipation
P
tot
× ×
(see note)
NOTE Maximum value over the specified range of operating ambient or reference-point temperatures. Any
special requirements for ventilation and/or mounting shall be stated.

5 Electrical characteristics
See clause 8 of this standard for inspection requirements.
[Repeat only subclause numbers used, with title. Any additional characteristics shall be given
at the appropriate place but without subclause number.]
[When several devices are defined in the same detail specification, the relevant values shall be

given on successive lines, avoiding repeating identical values.]
[Curves should preferably be given under clause 10 of this standard.]

60747-4-1  IEC:2000(E) – 7 –
Characteristics and conditions Values

at T or T = 25 °C
amb case
Subclause Letter Tested
Type A Type B
unless otherwise specified
symbols
(see clause 4 of the generic
Min. Max. Min. Max.
specification)
5.1 Drain current with gate short-circuited to I A2b
DSS × × × ×
source: value at specified VDS

5.2 Gate-source cut-off voltage: value at V × × × × A2b
GSoff
specified V and I
DS DS
5.3 Gate-source breakdown voltage: value at  A2b
V(BR)GS × ×
specified I
G
or
gate cut-off current, with drain short- I  A2b
GSS × ×
circuited to source: value at specified V
GS
5.4 Thermal resistance channel to case: value R × C2d
th(j-c)
at specified T and I
case G
5.5 Output power at 1 dB-gain compression: A4
Po(1dB) ×
value at specified f, V and I
DS DS
or
output power: value at specified f, V , I P  A4
DS DS o ×
and P
in
5.6 Power gain at 1 dB-gain compression: G  A4
P(1dB) ×
value at specified f, V and I (see note)
DS DS
5.7 Power added efficiency: value at specified η ×  A4
a
...