IEC 60747-8:2010/AMD1:2021

Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

General Information

• Status: Published
• Publication Date: 24-Jun-2021
• ICS: 31.080.30 - Transistors
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 3 - TC 47/SC 47E/WG 3
• Current Stage: PPUB - Publication issued
• Start Date: 25-Jun-2021
• Completion Date: 21-Jun-2021

Relations

• Amends: IEC 60747-8:2010 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
• Effective Date: 05-Sep-2023

Overview

IEC 60747-8:2010/AMD1:2021 is Amendment 1 to the IEC international standard for discrete field-effect transistors (FETs / MOSFETs). This amendment refines terminology, updates symbol usage, and revises testing and measurement procedures related to MOSFETs and the inverse diode integrated in N-channel devices. The changes improve clarity for manufacturers, test laboratories and designers who rely on consistent definitions and repeatable test methods.

Key Topics

• Terminology and Symbols

  • The amendment replaces and clarifies the conventional terms and table titles for MOSFETs and the inverse diode (for example, preferred terms for reverse/forward recovery metrics and reverse drain currents).
  • Deprecated terms are replaced by preferred symbols to harmonize datasheets, test reports and standards references.

• Currents and Limits

  • New and revised current definitions are introduced for source currents, peak source currents and various reverse/peak drain currents applicable to N- and P-channel devices.
  • Subclauses and test items (e.g., maximum continuous and peak reverse drain current) are updated to reflect the clarified nomenclature.

• Test Procedures and Figures

  • Multiple figures and measurement circuit descriptions (including RBSOA test circuits and current waveform figures) are replaced or updated.
  • Measurement procedures for MOSFET forward recovery time and recovered charge, peak forward recovery current, drain-source reverse voltage and peak reverse drain current are revised to improve repeatability and specification clarity.

• Reverse-bias Safe Operation Area (RBSOA)

  • RBSOA test instructions and the required monitoring parameters have been clarified so that devices are tested consistently under turn-off and clamped voltage conditions.

• Routine Tests and Requirements

  • Routine test cross-references and required test items in the standard's tables were updated to reflect the new or renamed subclauses.

Applications

This amendment provides practical value for:

• Semiconductor manufacturers seeking consistent naming and test requirements for MOSFET product specifications and datasheets.
• Test laboratories implementing standardized test setups and waveform measurements for reverse currents, forward recovery and RBSOA testing.
• Power electronics designers and reliability engineers who depend on accurate MOSFET characteristics for system-level protection, thermal design and switching performance.

Benefits include improved interoperability of test data, clearer documentation of inverse-diode behaviour in MOSFETs, and reduced ambiguity when specifying device limits.

Related Standards

• IEC 60747 series (Semiconductor devices) - broader family addressing discrete semiconductor device standards.
• ISO/IEC Directives - referenced procedural guidance used for drafting and publishing the amendment.

For authoritative wording, diagrams and full test specifications refer to the official IEC publication of IEC 60747-8:2010/AMD1:2021 available from the IEC webstore.

Standards Content (Sample)

IEC 60747-8 ®
Edition 3.0 2021-06
INTERNATIONAL
STANDARD
AMENDMENT 1
Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors

IEC 60747-8:2010-12/AMD1:2021-06(en)

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IEC 60747-8 ®
Edition 3.0 2021-06
INTERNATIONAL
STANDARD
AMENDMENT 1
Semiconductor devices – Discrete devices –

Part 8: Field-effect transistors

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.30 ISBN 978-2-8322-9851-0

– 2 – IEC 60747-8:2010/AMD1:2021
© IEC 2021
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 8: Field-effect transistors

AMENDMENT 1
FOREWORD
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9) Attention is drawn to the possibility that some of the elements of this document may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
Amendment 1 to IEC 60747-8:2021 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this Amendment is based on the following documents:
Draft Report on voting
47E/726/CDV 47E/744/RVC
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Amendment is English.

© IEC 2021
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/standardsdev/publications/.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
– 4 – IEC 60747-8:2010/AMD1:2021
© IEC 2021
3.4 Conventional used terms
Replace the existing Table 1 title and whole table in this subclause with the following new
Table 1:
Table 1 – Terms for MOSFET in this document and the conventional used
terms for the inverse diode integrated in the MOSFETs for N-channel
Letter Deprecated terms for inverse diode with
Preferred terms
symbol MOSFET in off-state
Drain-source reverse voltage V Inverse diode forward voltage
SD
MOSFET forward recovery current I Inverse diode reverse recovery current
fr
MOSFET peak forward recovery current I Inverse diode pea
...