IEC 60747-8:2010
(Main)Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
Dispositifs à semiconducteurs - Dispositifs descrets - Partie 8: Transistors à effet de champ
La CEI 60747-8:2010 donne les normes pour les catégories suivantes de transistors à effets de champ:
- type A: type à jonction de grille;
- type B: type à grille isolée à déplétion (appauvrissement) (normalement à l'état passant);
- type C: type à grille isolée à enrichissement (normalement à l'état bloqué).
Les principaux changements par rapport à l'édition précédente sont énumérés ci-dessous.
a) L'Article 3 "Classification" a été déplacé et ajouté à l'Article 1.
b) L'Article 4 "Terminologie et symboles littéraux" a été divisé en Article 3 "Termes et définitions" et Article 4 "Symboles littéraux", ce dernier a été amendé avec des additions et des suppressions.
c) Les Articles 5, 6 et 7 ont été amendés avec les nécessaires additions et suppressions.
Cette publication doit être lue conjointement avec la CEI 60747-1:2006.
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IEC 60747-8
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Edition 3.1 2021-06
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Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
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IEC 60747-8
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STANDARD
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Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
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IEC 60747-8
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Part 8: Field-effect transistors
IEC 60747-8:2010-12+AMD1:2021-06 CSV(en)
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IEC 2021
CONTENTS
FOREWORD . 6
1 Scope . 8
2 Normative references . 8
3 Terms and definitions . 9
3.1 Types of field-effect transistors . 9
3.2 General terms . 10
3.2.1 Physical regions (of a field-effect transistor) . 10
3.2.2 Functional regions . 11
3.3 Terms related to ratings and characteristics . 12
3.4 Conventional used terms . 17
4 Letter symbols .
...
IEC 60747-8
®
Edition 3.0 2010-12
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
Dispositifs à semiconducteurs – Dispositifs descrets –
Partie 8: Transistors à effet de champ
IEC 60747-8:2010
---------------------- Page: 1 ----------------------
THIS PUBLICATION IS COPYRIGHT PROTECTED
Copyright © 2010 IEC, Geneva, Switzerland
All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by
any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either IEC or
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IEC 60747-8
®
Edition 3.0 2010-12
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part
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