ISO 18115-2:2013
(Main)Surface chemical analysis — Vocabulary — Part 2: Terms used in scanning-probe microscopy
Surface chemical analysis — Vocabulary — Part 2: Terms used in scanning-probe microscopy
ISO 18115-2:2013 defines terms for surface chemical analysis.
Analyse chimique des surfaces — Vocabulaire — Partie 2: Termes utilisés en microscopie à sonde à balayage
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Standards Content (Sample)
INTERNATIONAL ISO
STANDARD 18115-2
Second edition
2013-11-15
Surface chemical analysis —
Vocabulary —
Part 2:
Terms used in scanning-probe
microscopy
Analyse chimique des surfaces — Vocabulaire —
Partie 2: Termes utilisés en microscopie à sonde à balayage
Reference number
ISO 18115-2:2013(E)
©
ISO 2013
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ISO 18115-2:2013(E)
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ISO 18115-2:2013(E)
Contents Page
Foreword .iv
Introduction .v
0 Scope . 1
1 Abbreviated terms . 1
2 Format . 4
2.1 Use of terms printed boldface in definitions . 4
2.2 Non-preferred and deprecated terms . 4
2.3 Subject fields . 4
3 Definitions of the scanning-probe microscopy methods . 4
4 Acronyms and terms for contact mechanics models .12
5 Terms for scanning-probe methods .13
6 Definitions of supplementary scanning-probe microscopy methods .37
7 Definitions of supplementary terms for scanning-probe methods .41
Bibliography .45
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ISO 18115-2:2013(E)
Foreword
ISO (the International Organization for Standardization) is a worldwide federation of national standards
bodies (ISO member bodies). The work of preparing International Standards is normally carried out
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ISO collaborates closely with the International Electrotechnical Commission (IEC) on all matters of
electrotechnical standardization.
The procedures used to develop this document and those intended for its further maintenance are
described in the ISO/IEC Directives, Part 1. In particular the different approval criteria needed for the
different types of ISO documents should be noted. This document was drafted in accordance with the
editorial rules of the ISO/IEC Directives, Part 2 (see www.iso.org/directives).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. ISO shall not be held responsible for identifying any or all such patent rights. Details of
any patent rights identified during the development of the document will be in the Introduction and/or
on the ISO list of patent declarations received (see www.iso.org/patents).
Any trade name used in this document is information given for the convenience of users and does not
constitute an endorsement.
For an explanation on the meaning of ISO specific terms and expressions related to conformity
assessment, as well as information about ISO’s adherence to the WTO principles in the Technical Barriers
to Trade (TBT) see the following URL: Foreword - Supplementary information
The committee responsible for this document is ISO/TC 201, Surface chemical analysis, Subcommittee
SC 1, Terminology.
This second edition cancels and replaces the first edition (ISO 18115-2:2010), which has been
technically revised.
ISO 18115 consists of the following parts, under the general title Surface chemical analysis — Vocabulary:
— Part 1: General terms and terms used in spectroscopy
— Part 2: Terms used in scanning-probe microscopy
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ISO 18115-2:2013(E)
Introduction
Surface chemical analysis is an important area which involves interactions between people with
different backgrounds and from different fields. Those conducting surface chemical analysis might be
materials scientists, chemists, or physicists and might have a background that is primarily experimental
or primarily theoretical. Those making use of the surface chemical data extend beyond this group into
other disciplines.
With the present techniques of surface chemical analysis, compositional information is obtained for
regions close to a surface (generally within 20 nm) and composition-versus-depth information is
obtained with surface analytical techniques as surface layers are removed. The terms covered in this part
of ISO 18115 relate to scanning-probe microscopy. The surface analytical terms covered in ISO 18115-1
extend from the techniques of electron spectroscopy and mass spectrometry to optical spectrometry
and X-ray analysis. Concepts for these techniques derive from disciplines as widely ranging as nuclear
physics and radiation science to physical chemistry and optics.
The wide range of disciplines and the individualities of national usages have led to different meanings
being attributed to particular terms and, again, different terms being used to describe the same concept.
To avoid the consequent misunderstandings and to facilitate the exchange of information, it is essential
to clarify the concepts, to establish the correct terms for use, and to establish their definitions.
The terms and definitions in this International Standard have been prepared in conformance with the
principles and style defined in ISO 1087-1:2000 and ISO 10241:1992. Essential aspects of these standards
appear in 2.1 to 2.3. This part of ISO 18115 comprises the 98 abbreviations and 277 definitions of the
combined ISO 18115-2:2010 and Amendment 1 to ISO 18115-2:2010. Corrections have been made to
terms 3.23, 3.25, 3.36, 5.52, 5.53, 5.54, 5.55, 5.73, 5.83, and 5.151 that appeared in ISO 18115-2:2010. The
terms are given in alphabetical order, classified under Clauses 3, 4, and 5 from the former International
Standard with corrections and Clauses 6 and 7 from Amendment 1:
Clause 3: Definitions of the scanning-probe microscopy methods;
Clause 4: Acronyms and terms for contact mechanics models;
Clause 5: Definitions of terms for scanning-probe methods;
Clause 6: Definitions of supplementary scanning-probe microscopy methods;
Clause 7: Definitions of supplementary terms for scanning-probe methods.
Many terms concerned with profilometry, or more correctly, surface texture measuring instruments,
may be found in ISO 3274 and ISO 4287. ISO 3274 specifies the properties of the instrument that influence
profile evaluation and provides basic considerations of the specification of contact (stylus) instruments
(profile meter and profile recorder) whereas ISO 4287 concerns some issues involving surface texture.
Those interested in a more detailed understanding of profilometry or surface texture measuring
instruments should consult ISO 3274, ISO 4287, ISO 25178, and other referenced documents.
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INTERNATIONAL STANDARD ISO 18115-2:2013(E)
Surface chemical analysis — Vocabulary —
Part 2:
Terms used in scanning-probe microscopy
0 Scope
This International Standard defines terms for surface chemical analysis. ISO 18115-1 covers general terms
and those used in spectroscopy while this part of ISO 18115 covers terms used in scanning-probe microscopy.
1 Abbreviated terms
In the list below, note that the final “M”, given as “microscopy”, may be taken equally as “microscope”,
depending on the context. References to the entries where the abbreviations, or keywords in the
abbreviations, are defined are given in brackets.
3D-PFM vector PFM (see 6.21)
AFM atomic-force microscopy (see 3.2)
AM-AFM amplitude modulation atomic-force microscopy (see 6.1)
AM-KPFM amplitude modulation Kelvin-force microscopy (see 6.2)
ANSOM apertureless near-field scanning optical microscopy (deprecated) (see 3.36)
ASNOM apertureless scanning near-field optical microscopy (deprecated) (see 3.36)
BEEM ballistic-electron emission microscopy (see. 5.8)
BEES ballistic-electron emission spectroscopy (see 5.8)
CFM chemical-force microscopy (see 3.3)
CITS current-imaging tunnelling spectroscopy (see 3.5)
CPAFM conductive-probe atomic-force microscopy (see 3.4)
CRAFM contact resonance atomic-force microscopy (see 6.4)
CRFM contact resonance force microscopy (see 6.4)
DFM dynamic-force microscopy (see 3.6)
DMM displacement modulation microscopy
DTM differential-tunnelling microscopy
EC-AFM electrochemical atomic-force microscopy (see 3.8)
ECFM electrochemical-force microscopy
EC-SPM electrochemical scanning-probe microscopy
EC-STM electrochemical scanning tunnelling microscopy (see 3.9)
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ISO 18115-2:2013(E)
EFM electrostatic-force microscopy (see 3.7)
FFM frictional-force microscopy (see 3.11)
FM-AFM frequency modulation atomic-force microscopy (see 3.10)
FM-KPFM frequency modulation Kelvin-force microscopy (see 6.6)
FMM force modulation microscopy (see 5.60)
FRET fluorescent resonance energy transfer (see 5.54)
FS force spectroscopy (see 5.58)
HFM heterodyne force microscopy
HPICM hopping probe ion conductance microscopy (see 6.7)
IC intermittent contact (see 5.73)
IETS inelastic electron tunnelling spectroscopy
IFM interfacial-force microscopy
KFM Kelvin-force microscopy (deprecated) (see 3.12)
KPM Kelvin-probe microscopy (see 5.76)
KPFM Kelvin-probe force microscopy (see 3.12)
LFM lateral-force microscopy (see 3.13)
LFMM lateral-force modulation microscopy (see 5.77)
MDFM magnetic dynamic-force microscopy (see 3.14)
MDM microwave dielectric microscopy
MFM magnetic-force microscopy (see 3.15)
MOKE magneto-optic Kerr effect
MRFM magnetic-resonance force microscopy (see 3.16)
MTA microthermal analysis
NC-AFM non-contact atomic-force microscopy (see 3.18)
NIS nanoimpedance spectroscopy
NSOM near-field scanning optical microscopy (see 3.17)
PF-AFM pulsed-force atomic-force microscopy (see 5.125)
PFM piezoresponse force microscopy (see 5.100)
PSTM photon scanning tunnelling microscopy
PTMS photothermal micro-spectroscopy (see 3.19)
RNSOM reflection near-field scanning optical microscopy (see 5.133)
RSNOM reflection scanning near-field optical microscopy (see 5.133)
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ISO 18115-2:2013(E)
SCFM scanning capacitance force microscopy (see 6.13)
SCM scanning capacitance microscopy (see 3.20)
SCPM scanning chemical-potential microscopy (see 3.21)
SECM scanning electrochemical microscopy (see 3.22)
SECM-SICM scanning electrochemical microscopy - scanning ion conductance microscopy (see 6.14)
SERRS surface-enhanced resonant Raman spectroscopy (see 5.154)
SERS surface-enhanced Raman scattering (see 5.151)
SFM scanning force microscopy (deprecated) (see 3.2)
SGM scanning gate microscopy
ShFM shear-force microscopy (see 3.37)
SHG second harmonic generation
SHPFM second harmonic piezo force microscopy
SHPM scanning Hall probe microscopy (see 3.23)
SICM scanning ion conductance microscopy (see 3.24)
SIM scanning impedance microscopy
SKPM scanning Kelvin-probe microscopy (see 5.76)
SMCM scanning micropipette contact method (see 6.17)
SMRM scanning magneto-resistance microscopy (see 3.25)
SMSM scanning Maxwell stress microscopy (see 3.26)
SMSM is sometimes given as SMM, but the latter acronym is also used for scanning microwave
microscopy and scanning magnetic microscopy and so should not be used for scanning Maxwell
stress microscopy.
SNDM scanning non-linear dielectric microscopy (see 3.29)
SNFUH scanning near-field ultrasound holography (see 3.28)
SNOM scanning near-field optical microscopy (see 3.17)
s-NSOM scattering near-field scanning optical microscopy (see 3.36)
SNTM scanning near-field thermal microscopy (see 3.27)
SPM scanning-probe microscopy (see 3.30)
SP-STM spin-polarized scanning tunnelling microscopy (see 3.38)
SP-STS spin-polarized scanning tunnelling spectroscopy (see 3.39)
SRTM spin-resolved tunnelling microscopy (deprecated) (see 3.38)
SSCM scanning surface confocal microscopy (see 6.18)
SSM scanning superconducting interference device (SQUID) microscopy
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ISO 18115-2:2013(E)
s-SNOM scattering scanning near-field optical microscopy (see 3.36)
SS-PFM switching spectroscopy piezoresponse force microscopy (see 6.20)
SSPM scanning surface potential microscopy (see 3.32)
SSRM scanning spreading-resistance microscopy (see 3.31)
STM scanning tunnelling microscopy (see 3.34)
SThM scanning thermal microscopy (see 3.33)
STHM scanning tunnelling hydrogen microscopy (see 6.19)
STS scanning tunnelling spectroscopy (see 3.35)
SVM scanning voltage microscopy
TECARS tip-enhanced coherent anti-Stokes Raman scattering
TEFS tip-enhanced fluorescence spectroscopy (see 3.41)
TERS tip-enhanced Raman spectroscopy (see 3.42)
TNSOM transmission near-field scanning optical microscopy
TSM thermal-scanning microscopy (deprecated, see 3.33, Note 2)
TSNOM transmission scanning near-field optical microscopy
UFM ultrasonic force microscopy (see 3.43)
2 Format
2.1 Use of terms printed boldface in definitions
A term printed in italics in a definition or a note is defined in another entry in either part of this
International Standard. However, the term is printed in italics only the first time it occurs in each entry.
2.2 Non-preferred and deprecated terms
A term listed lightface is non-preferred or deprecated. The preferred term is listed boldface.
2.3 Subject fields
Where a term designates several concepts, it is necessary to indicate the subject field to which each
concept belongs. The field is shown lightface, between angle brackets, preceding the definition, and on
the same line.
3 Definitions of the scanning-probe microscopy methods
NOTE The following are the definitions of scanned probe microscopy methods. In the list below, note that
the final “M” or final “S” in the acronyms, given as “microscopy” or “spectroscopy”, may also mean “microscope”
or “spectrometer”, respectively, depending on the context. For the definition relating to the microscope or
spectrometer, replace the words “a method” by the words “an instrument” where that appears.
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ISO 18115-2:2013(E)
3.1
apertureless Raman microscopy
method of microscopy involving the acquisition of Raman spectroscopic data utilizing
a near-field (5.88) optical source and based upon a metal tip (5.120) in close proximity to the sample
surface illuminated with suitably polarized light
3.2
atomic-force microscopy
AFM
DEPRECATED: scanning force microscopy
DEPRECATED: SFM
method for imaging surfaces by mechanically scanning their surface contours, in which the deflection
of a sharp tip (5.120) sensing the surface forces, mounted on a compliant cantilever (5.18), is monitored
Note 1 to entry: AFM can provide a quantitative height image (5.69) of both insulating and conducting surfaces.
Note 2 to entry: Some AFM instruments move the sample in the x-, y- and z-directions while keeping the tip
position constant and others move the tip while keeping the sample position constant.
Note 3 to entry: AFM can be conducted in vacuum, a liquid, a controlled atmosphere, or air. Atomic resolution may
be attainable with suitable samples, with sharp tips, and by using an appropriate imaging mode.
Note 4 to entry: Many types of force can be measured, such as the normal forces (5.91) or the lateral (5.77), friction
(5.62), or shear force. When the latter is measured, the technique is referred to as lateral (3.13), frictional (3.11), or
shear force microscopy (3.37). This generic term encompasses all of the types of force microscopy listed in Clause 1.
Note 5 to entry: AFMs can be used to measure surface normal forces at individual points in the pixel array
used for imaging.
Note 6 to entry: For typical AFM tips with radii < 100 nm, the normal force should be less than about 0,1 μN,
depending on the sample material, or irreversible surface deformation and excessive tip wear occur.
3.3
chemical-force microscopy
CFM
LFM (3.13) or AFM (3.2) mode in which the deflection of a sharp probe tip (5.120), functionalized to
provide interaction forces with specific molecules, is monitored
Note 1 to entry: LFM is the most popularly used mode.
3.4
conductive-probe atomic-force microscopy
CPAFM
DEPRECATED: CAFM
DEPRECATED: C-AFM
AFM (3.2) mode in which a conductive probe (5.109) is used to measure both topography and
electric current between the tip (5.120) and the sample
Note 1 to entry: CPAFM is a secondary imaging mode derived from contact AFM that characterizes conductivity
variations across medium- to low-conducting and semiconducting materials. Typically, a DC bias is applied to the
tip, and the sample is held at ground potential. While the z feedback signal is used to generate a normal-contact
AFM topography image (5.69), the current passing between the tip and the sample is measured to generate the
conductive AFM image.
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ISO 18115-2:2013(E)
3.5
current-imaging tunnelling spectroscopy
CITS
method in which the STM tip is held at a constant height above the surface, while the bias voltage,
V, is scanned and the tunnelling current, I, is measured and mapped
Note 1 to entry: The constant height is usually maintained by gating the feedback loop so that it is only active for
some proportion of the time; during the remaining time, the feedback loop is switched off and the applied tip bias
is ramped and the current is measured.
Note 2 to entry: See I-V spectroscopy (5.74).
3.6
dynamic-mode AFM
dynamic-force microscopy
DFM
AFM (3.2) mode in which the relative positions of the probe tip (5.120) and sample vary in a
sinusoidal manner at each point in the image (5.69)
Note 1 to entry: The sinusoidal oscillation is usually in the form of a vibration in the z-direction and is often driven
at a frequency close to, and sometimes equal to, the cantilever resonance frequency.
Note 2 to entry: The signal measured can be the amplitude, the phase shift, or the resonance frequency shift of
the cantilever.
3.7
electrostatic-force microscopy
DEPRECATED: electric-force microscopy
AFM (3.2) mode in which a conductive probe (5.109) is used to map both topography and
electrostatic force between the tip (5.120) and the sample surface
3.8
electrochemical atomic-force microscopy
EC-AFM
AFM (3.2) mode in which a conductive probe (5.109) is used in an electrolyte solution to measure
both topography and electrochemical current
3.9
electrochemical scanning tunnelling microscopy
EC-STM
STM (3.34) mode in which a coated tip (5.120) is used in an electrolyte solution to measure both
topography and electrochemical current
3.10
frequency modulation atomic-force microscopy
FM-AFM
dynamic-mode AFM (3.6) in which the shift in resonance frequency (5.134) of the probe assembly (5.20) is
monitored and is adjusted to a set point using a feedback circuit
3.11
frictional-force microscopy
FFM
SPM (3.30) mode in which the friction force (5.62) is monitored
Note 1 to entry: The friction force can be detected in a static or frequency-modulated mode. Information on the
tilt azimuthal variation of the frictional force needs the static mode.
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ISO 18115-2:2013(E)
3.12
Kelvin-probe force microscopy
KPFM
DEPRECATED: KFM
dynamic-mode AFM (3.6) using a conducting probe tip to measure spatial or temporal changes in the
relative electric potentials of the tip and the surface
Note 1 to entry: Changes in the relative potentials reflect changes in the surface work function (4.487).
3.13
lateral-force microscopy
LFM
SPM (3.30) mode in which surface contours are scanned with a probe assembly (5.20) while monitoring
the lateral forces exerted on the probe tip (5.120) by observation of the torsion of the cantilever (5.18)
arising as a result of those forces
Note 1 to entry: The lateral forces can be detected in a static or frequency-modulated mode. Information on the
tilt azimuth of surface molecules needs the static mode.
3.14
magnetic dynamic-force microscopy
MDFM
DEPRECATED: magnetic AC mode
DEPRECATED: MAC mode
AFM (3.2) mode in which the probe (5.109) is oscillated by using a magnetic force (5.80)
3.15
magnetic-force microscopy
MFM
AFM (3.2) mode employing a probe assembly (5.20) that monitors both atomic forces and magnetic
interactions between the probe tip (5.120) and a surface
3.16
magnetic-resonance force microscopy
MRFM
AFM (3.2) imaging mode in which magnetic signals are mechanically detected by using a
cantilever (5.18) at resonance and the force arising from nuclear or electronic spin in the sample is
sensitively measured
3.17
near-field scanning optical microscopy
NSOM
scanning near-field optical microscopy
SNOM
method of imaging surfaces optically in transmission or reflection by mechanically scanning an optically
active probe (5.109) much smaller than the wavelength of light over the surface while monitoring the
transmitted or reflected light or an associated signal in the near-field (5.88) regime
Note 1 to entry: See scattering NSOM (3.36), scattering SNOM (3.36).
Note 2 to entry: Topography is important and the probe is scanned at constant height. Usually, the probe is
oscillated in the shear mode to detect and set the height.
Note 3 to entry: Where the extent of the optical probe is defined by an aperture (5.5), the aperture size is typically
in the range of 10 nm to 100 nm, and this largely defines the resolution. This form of instrument is often called
an aperture NSOM or aperture SNOM to distinguish it from a scattering NSOM (3.36) or scattering SNOM (3.36)
[previously called apertureless NSOM (3.36) or apertureless SNOM (3.36)], although, generally, the adjective
“aperture” is omitted. In the apertureless form, the extent of the optically active probe is defined by an illuminated
sharp metal or metal-coated tip (5.120) with a radius typically in the range of 10 nm to 100 nm, and this largely
defines the resolution.
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ISO 18115-2:2013(E)
Note 4 to entry: In addition to the optical image (5.69), NSOM can provide a quantitative image of the surface
contours similar to that available in AFM (3.2) and allied scanning-probe techniques.
Note 5 to entry: This generic term encompasses all of the types of near-field microscopy listed in Clause 2.
3.18
non-contact atomic-force microscopy
NC-AFM
dynamic-mode AFM (3.6) in which the probe tip (5.120) is operated at such a distance from the surface
that it samples the weak, attractive van der Waals or other forces
Note 1 to entry: Forces in this mode are very low and are best for studying soft materials or avoiding cross-
contamination of the tip and the surface.
3.19
photothermal micro-spectroscopy
PTMS
SThM mode in which the probe (5.109) detects the photothermal response of a sample exposed to
infrared light to obtain an absorption spectrum
Note 1 to entry: The infrared light can be either from a tuneable monochromatic source or from a broadband source
set up as part of a Fourier transform infrared spectrometer. In the latter case, the photothermal temperature
fluctuations can be measured as a function of time to provide an interferogram which is Fourier-transformed to
give the spectrum of sub-micron-sized regions of the sample.
3.20
scanning capacitance microscopy
SCM
SPM (3.30) mode in which a conductive probe (5.109) is used to measure both topography and capacitance
between the tip (5.120) and sample
3.21
scanning chemical-potential microscopy
SCPM
SPM (3.30) mode in which spatial variations in the thermoelectric voltage signal, created by a constant
temperature gradient normal to the sample surface, are measured and related to spatial variations in
the chemical-potential gradient
3.22
scanning electrochemical microscopy
SECM
SPM (3.30) mode in which imaging occurs in an electrolyte solution with an electrochemically active
tip (5.120)
Note 1 to entry: See electrochemical atomic-force microscopy (3.8), EC-AFM (3.8), electrochemical scanning-probe
microscopy (6.5), EC-SPM (6.5), electrochemical scanning tunnelling microscopy (3.9), EC-STM (3.9).
Note 2 to entry: In most cases, the SECM tip is an ultramicroelectrode and the tip signal is a Faradaic current from
electrolysis of solution species.
Note 3 to entry: The potential difference between the tip and either the sample or a reference electrode is
usually monitored.
Note 4 to entry: The liquid is usually an ionic or polar liquid in which an electric double layer exists at the
sample surface.
Note 5 to entry: The surface may be scanned with the tip at a constant height in the instrument frame to measure
the convolution of topography and electrochemical activity, or if the sample is electrochemically homogeneous,
in a feedback mode so that the tip is at a constant distance from the sample surface and the topography of the
surface is recorded.
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ISO 18115-2:2013(E)
3.23
scanning Hall probe microscopy
SHPM
SPM (3.30) mode in which a Hall probe is used as the scanning sensor to measure and map the magnetic
field from a sample surface
3.24
scanning ion conductance microscopy
SICM
SPM (3.30) mode in which an electrolyte-filled micropipette or nanopipette is used as a local probe
(5.109) for insulating samples immersed in an electrolytic solution
Note 1 to entry: The distance dependence of the ion conductance provides the key to performing non-contact
surface profiling.
3.25
scanning magneto-resistance microscopy
SMRM
SPM (3.30) mode in which a magneto-resistive sensor probe (5.109) on a cantilever (5.18) is scanned in
the contact mode (5.35) over a magnetic sample surface to measure two-dimensional magnetic images
(5.69) by acquiring magneto-resistive voltage
3.26
scanning Maxwell stress microscopy
SMSM
SPM (3.30) mode in which a conductive probe (5.109) is used to measure both topography and surface
potential by utilizing the Maxwell stress
3.27
scanning near-field thermal microscopy
SNTM
SNOM method in which an infrared-sensing thermometer is used to detect the local emission collected
by an optical probe (5.109) to measure both the topography and thermal properties
3.28
scanning near-field ultrasound holography
SNFUH
method for imaging surfaces and the subsurface regimes by mechanically scanning their surface contours
and detecting the results of the interference of a high-frequency acoustic wave [of the order of MHz or
higher and substantially greater than the resonance frequency (5.134) of the cantilever (5.18)] applied to
the bottom of the sample while another wave is applied to the cantilever at a slightly different frequency
3.29
scanning non-linear dielectric microscopy
SNDM
SPM (3.30) mode in which a conductive probe (5.109) is used to measure both topography and dielectric
constant (capacitance)
3.30
scanning-probe microscopy
SPM
method of imagi
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