SIST EN 60747-15:2004
(Main)Discrete semiconductor devices -- Part 15: Isolated power semiconductor devices
Discrete semiconductor devices -- Part 15: Isolated power semiconductor devices
Gives the product specific standards, requirements and test methods for isolated power semiconductor devices. These requirements are added to those given in other parts of EN 60747, EN 60748 and EN 60749 for the corresponding non-isolated power devices.
Einzel-Halbleiterbauelemente -- Teil 15: Isolierte Leistungshalbleiter
Dispositifs à semiconducteurs -- Partie 15: Dispositifs à semiconducteurs de puissance isolés
Gives the product specific standards, requirements and test methods for isolated power semiconductor devices. These requirements are added to those given in other parts of EN 60747, EN 60748 and EN 60749 for the corresponding non-isolated power devices.
Diskretni polprevodniki - 15. del: Izolirani močnostni polprevodniki (IEC 60747-15:2003)
General Information
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Standards Content (Sample)
SLOVENSKI SIST EN 60747-15:2004
STANDARD
november 2004
Diskretni polprevodniki - 15. del: Izolirani močnostni polprevodniki (IEC 60747-
15:2003)
Discrete semiconductor devices - Part 15: Isolated power semiconductor devices
(IEC 60747-15:2003)
ICS 31.080.01 Referenčna številka
SIST EN 60747-15:2004(en)
© Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno
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EUROPEAN STANDARD EN 60747-15
NORME EUROPÉENNE
EUROPÄISCHE NORM January 2004
ICS 31.080.99
English version
Discrete semiconductor devices
Part 15: Isolated power semiconductor devices
(IEC 60747-15:2003)
Dispositifs à semiconducteurs Einzel-Halbleiterbauelemente
Partie 15: Dispositifs à semiconducteurs Teil 15: Isolierte Leistungshalbleiter
de puissance isolés (IEC 60747-15:2003)
(CEI 60747-15:2003)
This European Standard was approved by CENELEC on 2003-11-01. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania,
Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Slovenia, Spain, Sweden, Switzerland
and United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2004 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60747-15:2004 E
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EN 60747-15:2004 - 2 -
Foreword
The text of the International Standard CEI 60747-15:2003, prepared by SC 47E, Discrete
semiconductor devices, of CEI TC 47, Semiconductor devices, was submitted to the Unique
Acceptance Procedure and was approved by CENELEC as EN 60747-15 on 2003-11-01 without any
modification.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2004-11-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2006-11-01
__________
Endorsement notice
The text of the International Standard CEI 60747-15:2003 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards indicated:
IEC 60068-1 NOTE Harmonized as EN 60068-1:1994 (not modified).
IEC 60068-2-1 NOTE Harmonized as EN 60068-2-1:1993 (not modified).
IEC 60068-2-2 NOTE Harmonized as EN 60068-2-2:1993 (not modified).
IEC 60068-2-58 NOTE Harmonized as EN 60068-2-58:1999 (not modified).
IEC 60068-2-78 NOTE Harmonized as EN 60068-2-78:2001 (not modified).
IEC 60112 NOTE Harmonized as EN 60112:2003 (not modified).
IEC 60146-1-1 NOTE Harmonized as EN 60146-1-1:1993 (not modified).
IEC 60146-2 NOTE Harmonized as EN 60146-2:2000 (not modified).
IEC 60664-3 NOTE Harmonized as HD 625.3 S1:1997 (not modified).
IEC 60747-5-1 NOTE Harmonized as EN 60747-5-1:2001 (not modified).
IEC 60747-5-2 NOTE Harmonized as EN 60747-5-2:2001 (not modified).
IEC 60747-5-3 NOTE Harmonized as EN 60747-5-3:2001 (not modified).
IEC 60749-1 NOTE Harmonized as EN 60749-1:2003 (not modified).
IEC 60749-2 NOTE Harmonized as EN 60749-2:2002 (not modified).
IEC 60749-3 NOTE Harmonized as EN 60749-3:2002 (not modified).
IEC 60749-4 NOTE Harmonized as EN 60749-4:2002 (not modified).
IEC 60749-7 NOTE Harmonized as EN 60749-7:2002 (not modified).
IEC 60749-9 NOTE Harmonized as EN 60749-9:2002 (not modified).
IEC 60749-11 NOTE Harmonized as EN 60749-11:2002 (not modified).
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- 3 - EN 60747-15:2004
IEC 60749-13 NOTE Harmonized as EN 60749-13:2002 (not modified).
IEC 60749-16 NOTE Harmonized as EN 60749-16:2003 (not modified).
IEC 60749-17 NOTE Harmonized as EN 60749-17:2003 (not modified).
IEC 60749-18 NOTE Harmonized as EN 60749-18:2003 (not modified).
IEC 60749-19 NOTE Harmonized as EN 60749-19:2003 (not modified).
IEC 60749-29 NOTE Harmonized as EN 60749-29:2003 (not modified).
IEC 60947-4-2 NOTE Harmonized as EN 60947-4-2:2000 (not modified).
IEC 60947-4-3 NOTE Harmonized as EN 60947-4-3:2000 (not modified).
IEC 60950-1 NOTE Harmonized as EN 60950-1:2001 (modified).
IEC 61000 NOTE Harmonized in EN 61000 series (not modified).
IEC 61340-5-1 NOTE Harmonized as EN 61340-5-1:2001 (not modified).
IEC 61800-1 NOTE Harmonized as EN 61800-1:1998 (not modified).
IEC 61800-2 NOTE Harmonized as EN 61800-2:1998 (not modified).
_____
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EN 60747-15:2004 - 4 -
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
This European Standard incorporates by dated or undated reference, provisions from other
publications. These normative references are cited at the appropriate places in the text and the
publications are listed hereafter. For dated references, subsequent amendments to or revisions of any
of these publications apply to this European Standard only when incorporated in it by amendment or
revision. For undated references the latest edition of the publication referred to applies (including
amendments).
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
Publication Year Title EN/HD Year
1) 2)
IEC 60068-2-6 - Environmental testing EN 60068-2-6 1995
Part 2-6: Tests - Test Fc: Vibration
(sinusoidal)
1) 2)
IEC 60068-2-7 - Part 2-7: Tests - Test Ga and guidance: EN 60068-2-7 1993
Acceleration, steady state
1) 2)
IEC 60068-2-14 - Part 2-14: Tests - Test N: Change of EN 60068-2-14 1999
temperature
1) 2)
IEC 60068-2-20 - Part 2-20: Tests - Test T: Soldering HD 323.2.20 S3 1988
1) 2)
IEC 60068-2-27 - Part 2-27: Tests - Test Ea and EN 60068-2-27 1993
guidance: Shock
1) 2)
IEC 60068-2-47 - Part 2-47: Test methods - Mounting of EN 60068-2-47 1999
components, equipment and other
articles for vibration, impact and similar
dynamic tests
1) 2)
IEC 60068-2-48 - Part 2-48: Tests - Guidance on the EN 60068-2-48 1999
application of the tests of IEC 60068 to
simulate the effects of storage
1) 2)
IEC 60068-3-4 - Part 3-4: Supporting documentation and EN 60068-3-4 2002
guidance - Damp heat tests
IEC 60191-4 1999 Mechanical standardization of EN 60191-4 1999
semiconductor devices
Part 4: Coding system and classification
into forms of package outlines for
semiconductor device packages
IEC 60270 2000 High-voltage test techniques - Partial EN 60270 2001
discharge measurements
1)
Undated reference.
2)
Valid edition at date of issue.
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- 5 - EN 60747-15:2004
Publication Year Title EN/HD Year
1)
IEC 60319 - Presentation and specification of - -
reliability data for electronic components
3)
IEC 60664-1 1992 Insulation coordination for equipment EN 60664-1 2003
within low-voltage systems
Part 1: Principles, requirements and
tests
IEC 60721-3-3 1994 Classification of environmental EN 60721-3-3 1995
conditions
Part 3-3: Classification of groups of
environmental parameters and their
severities - Stationary use at
weatherprotected locations
IEC 60747-1 1983 Semiconductor devices - Discrete - -
devices and integrated circuits –
Part 1: General
A1 1991 - -
A3 1996 - -
IEC 60747-2 2000 Part 2: Rectifier diodes - -
IEC 60747-6 2000 Part 6: Thyristors - -
IEC 60747-7 2000 Part 7: Bipolar transistors - -
IEC 60747-8 2000 Part 8: Field-effect transistors - -
IEC 60747-9 1998 Part 9: Insulated-gate bipolar transistors - -
(IGBTs)
1) 2)
IEC 60749-5 - Semiconductor devices - Mechanical EN 60749-5 2003
and climatic test methods
Part 5: Steady-state temperature
humidity bias life test
1) 2)
IEC 60749-6 - Part 6: Storage at high temperature EN 60749-6 2002
1) 2)
IEC 60749-10 - Part 10: Mechanical shock EN 60749-10 2002
1) 2)
IEC 60749-12 - Part 12: Vibration, variable frequency EN 60749-12 2002
1) 2)
IEC 60749-14 - Part 14: Robustness of terminations EN 60749-14 2003
(lead integrity)
1) 2)
IEC 60749-15 - Part 15: Resistance to soldering EN 60749-15 2003
temperature for through-hole mounted
devices
4)
IEC 60749-21 - Part 21: Solderability - -
1) 2)
IEC 60749-25 - Part 25: Temperature cycling EN 60749-25 2003
3)
EN 60664-1 includes A1:2000 + A2:2002 to IEC 60664-1.
4)
At draft stage.
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EN 60747-15:2004 - 6 -
Publication Year Title EN/HD Year
1)
IEC 60749-26 - Part 26: Electrostatic discharge (ESD) - -
sensitivity testing - Human body model
(HBM)
1) 2)
IEC 60749-36 - Part 36: Acceleration, steady state EN 60749-36 2003
IEC 61287-1 1995 Power convertors installed on board - -
rolling stock
Part 1: Characteristics and test methods
ISO 1302 2002 Geometrical Product Specifications EN ISO 1302 2002
(GPS) - Indication of surface texture in
technical product documentation
ISO 2768-2 1989 General tolerances EN 22768-2 1993
Part 2: Geometrical tolerances for
features without individual tolerance
indications
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INTERNATIONAL IEC
STANDARD
60747-15
First edition
2003-06
Discrete semiconductor devices –
Part 15:
Isolated power semiconductor devices
Dispositifs à semiconducteurs –
Partie 15:
Dispositifs à semiconducteurs de puissance isolés
IEC 2003 Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
PRICE CODE
Commission Electrotechnique Internationale
X
International Electrotechnical Commission
Международная Электротехническая Комиссия
For price, see current catalogue
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– 2 – 60747-15 IEC:2003(E)
CONTENTS
FOREWORD . 4
1 Scope . 5
2 Normative references. 5
3 Terms and definitions . 7
4 Letter symbols .12
4.1 General .12
4.2 Additional subscripts/symbols .12
4.3 List letter symbols.12
5 Essential ratings (limiting values) and characteristics .13
5.1 General .13
5.2 Ratings (limiting values) .13
5.3 Characteristics.16
6 Verification of ratings (limiting values) .24
6.1 Isolation voltage between terminals and base plate (V ) .24
isol
6.2 Peak case non-rupture current.26
6.3 Maximum terminal current (I ) .26
tRMS
6.4 Surge (non-repetitive) current test (I ; I ).26
FSM TSM
7 Methods of measurement of characteristics .26
7.1 Rated partial discharge inception and extinction voltages (V ) (V ) .26
i e
7.2 Parasitic stray inductance between main terminals (L ) .27
P
7.3 Parasitic stray capacitance of functional circuit elements to case (C ) .30
P
7.4 Measuring methods for thermal characteristics .31
7.5 Measuring methods of mechanical characteristics .32
8 Acceptance and reliability .33
8.1 General requirements .33
8.2 List of endurance tests .33
8.3 Type tests and routine tests of isolated power devices .36
Annex A (informative) Test method for peak case non-rupture current.38
Annex B (informative) Measuring method of the thickness of thermal compound paste.41
Annex C (informative) Climatic parameters and characteristics .42
Annex D (informative) Internal circuit configurations.43
Bibliography.44
Figure 1 – Explanation of parasitic inductance L .18
P
Figure 2 – Examples for distributed parasitic stray inductances L .18
P
Figure 3a – Example of a cross-section of an isolated power device mounted on a heat
sink, with the temperatures T ,… T .20
vj a
Figure 3b – Model of thermal resistances of circuit elements R , R , R ,
th(j-c) th(c-s) th(s-a)
resp. Z , Z and Z , schematically .20
th(j-c) th(j-s) th(j-a)
Figure 4 – Reference points for measuring the temperatures T , T , T , T T to be
vj c cI cD s
specified for an isolated power device, seen from above .22
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60747-15 IEC:2003(E) – 3 –
Figure 5 – Transient thermal impedance Z = f(t ) of an isolated power
th(j-c) p
semiconductor device as a function of the pulse duration time t , elapsed after a step
p
change of applied power dissipation.23
Figure 6 – Basic circuit diagram for isolation breakdown withstand voltage test (“high
pot test”) with V .24
isol
Figure 7 – Isolation levels of an isolated power device with integrated driver and
protection functions.25
Figure 8a – Circuit diagram for measurement of parasitic stray inductances (L ).28
P
Figure 8b – Wave forms .29
Figure 9 – Circuit for the measurement of parasitic stray capacitance C of
p
the functional circuit elements to base plate (ground).30
Figure 10 – Example for reference points for the measurement of T and T for the
cref sref
thermal resistance of an isolated power semiconductor devices (dual-switch, 62 mm wide).32
Figure 11 – Power cycling (load) capability N versus temperature rise of the junction
f;p
temperature T per load pulse .34
vj
Figure A.1 – Circuit diagram for test of peak case non-rupture current I .38
CNR
Figure B.1– Example of a measuring gauge for a layer of thermal compound paste of a
thickness between 5 µm and 150 µm.41
Figure D.1 – Converter circuits containing diodes and/or thyristors .43
Figure D.2 – Inverter circuits containing diodes and/or transistors shown as IGBT .44
Table 1 – Environmental testing .35
Table 2 – Minimum type and routine tests for isolated power semiconductor devices .36
Table C.1 – Classification of climatic environmental conditions, e.g. Class 3K3 and 3K4
(extract, not complete) .42
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– 4 – 60747-15 IEC:2003(E)
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
DISCRETE SEMICONDUCTOR DEVICES –
Part 15: Isolated power semiconductor devices
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-15 has been prepared by subcommittee 47E, Discrete
semiconductor devices of IEC technical committee 47: Semiconductor devices
The text of this standard is based on the following documents:
FDIS Report on voting
47E/236/FDIS 47E/238/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The committee has decided that the contents of this publication will remain unchanged until 2006.
At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
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60747-15 IEC:2003(E) – 5 –
DISCRETE SEMICONDUCTOR DEVICES –
Part 15: Isolated power semiconductor devices
1 Scope
This part of IEC 60747 gives the product specific standards, requirements and test methods
for isolated power semiconductor devices. These requirements are added to those given in
other parts of IEC 60747, IEC 60748 and IEC 60749 for the corresponding non-isolated power
devices.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60068-2-6, Environmental testing – Part 2-6: Tests – Test Fc: Vibration (sinusoidal)
IEC 60068-2-7, Environmental testing – Part 2-7: Tests – Test Ga and guidance: Acceleration,
steady state
IEC 60068-2-14, Environmental testing – Part 2-14: Tests – Test N: Change of temperature
IEC 60068-2-20, Environmental testing – Part 2-20: Tests – Test T: Soldering
IEC 60068-2-27, Environmental testing – Part 2-27: Tests – Test Ea and guidance: Shock
IEC 60068-2-47, Environmental testing – Part 2-47: Test methods – Mounting of components,
equipment and other articles for vibration, impact and other similar dynamic tests
IEC 60068-2-48, Environmental testing – Part 2-48: Test methods – Guidance on the appli-
cation of the tests of IEC 60068 to simulate the effects of storage
IEC 60068-3-4: Environmental testing – Part 3-4: Supporting documentation and guidance –
Damp heat tests
IEC 60191-4:1999, Mechanical standardization of semiconductor devices – Part 4: Coding
system and classification into forms of package outlines for semiconductor device packages
IEC 60270:2000, High voltage test techniques – Partial discharge measurements
IEC 60319, Presentation and specification of reliability data for electronic components
IEC 60664-1:1992, Insulation coordination for equipment within low-voltage systems –
Principles, requirements and tests
IEC 60721-3-3:1994, Classification of environmental conditions – Part 3-3: Classification
of groups of environmental parameters and their severities – Stationary use at weather-
protected locations
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– 6 – 60747-15 IEC:2003(E)
IEC 60747-1:1983, Semiconductor devices – Discrete devices and integrated circuits –
Part 1: General
Amendment 1 (1991)
Amendment 3 (1996)
IEC 60747-2:2000, Semiconductor devices – Discrete devices and integrated circuits – Part 2:
Rectifier diodes
IEC 60747-6:2000, Semiconductor devices – Part 6: Thyristors
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
IEC 60747-8:2000, Semiconductor devices – Part 8: Field effect transistors
IEC 60747-9:1998, Semiconductor devices – Discrete devices – Part 9: Insulated-gate bipolar
transistors (IGBTs)
IEC 60749-5: Semiconductor devices – Mechanical and climatic test methods – Part 5:
Steady-state temperature humidity bias life test
IEC 60749-6: Semiconductor devices – Mechanical and climatic test methods – Part 6:
Storage at high temperature
IEC 60749-10: Semiconductor devices – Mechanical and climatic test methods – Part 10:
Mechanical shock
IEC 60749-12: Semiconductor devices – Mechanical and climatic test methods – Part 12:
Vibration, variable frequency
IEC 60749-14: Semiconductor devices – Mechanical and climatic test methods – Part 14:
1
Robustness of terminations (lead integrity)
IEC 60749-15: Semiconductor devices – Mechanical and climatic test methods – Part 15:
1
Resistance to soldering temperature for through-hole mounted devices
IEC 60749-21: Semiconductor devices – Mechanical and climatic test methods – Part 21:
1
Solderability
IEC 60749-25: Semiconductor devices – Mechanical and climatic test methods – Part 25:
1
Rapid change of temperature (air, air)
IEC 60749-26: Semiconductor devices – Mechanical and climatic test methods – Part 26:
1
Rapid change of temperature (air, air)
IEC 60749-36: Semiconductor devices – Mechanical and climatic test methods – Part 36:
Acceleration, steady-state
IEC 61287-1:1995, Power convertors installed on board rolling stock – Part 1: Characteristics
2
and test methods
ISO 1302:2002, Geometrical Product Specifications (GPS) – Indication of surface texture
in technical product documentation
ISO 2768-2:1989, General tolerances – Part 2: Geometrical tolerances for features without
individual tolerance indications
———————
1
In preparation.
2
A new edition is being prepared.
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60747-15 IEC:2003(E) – 7 –
3 Terms and definitions
For the purposes of this part of IEC 60747, the following definitions apply.
3.1
isolated power semiconductor device
semiconductor device that contains an integral electrical insulator between cooling surface or
base plate (envelope) and any isolated circuit elements
NOTE 1 Included are solid-state relays (SSRs) incorporating opto-isolated driving units (see IEC 60747-5-1,
IEC 60745-5-2 and IEC 60745-5-3), monolithically integrated ICs with power stages and isolated cooling surface,
i.e. intelligent power devices and isolated discrete plastic encapsulated packages that have an isolated cooling
surface.
NOTE 2 The surface of the package transferring the heat to a heat sink or ambient is referred to as “base plate”.
The surface of the package not transferring the heat is referred to as “envelope”.
3.2
constituent parts of the isolated power semiconductor device
3.2.1
circuit element
any constituent part of a circuit that contributes directly to its operation and performs a
definable function
NOTE Examples include rectifier diodes, thyristors, bipolar transistors, MOSFETs, IGBTs affixed on metallized
isolator substrates and integrated driver and protection circuits.
3.2.2
interconnection
internal connection between circuit elements and between circuit elements and terminals (see
subclause 3.7.2 of IEC 60747-1)
NOTE They are considered to be parts of their associated circuit elements.
3.2.3
base plate
metallic or metallized cooling surface part of the package that transfers the heat from inside to
a heat sink outside
3.2.4
terminals
externally available points of connection, isolated from base plate
3.2.4.1
main terminals
terminals having the high potential of the power circuit and carrying the main current
3.2.4.2
control terminals
terminals having only low current capability for the purpose of control function to which the
external control signals are applied or from which sensing parameters are taken
3.2.4.3
high-voltage control terminals
terminals having the high potential of the power circuit, but carrying only low current for
control function
NOTE Examples include current shunts and collector sense terminals having the high potential of the main
terminals.
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– 8 – 60747-15 IEC:2003(E)
3.2.4.4
low-voltage control terminals
terminals at a low potential against base plate having a control function, and isolated from the
“main terminals” as well as from high voltage control terminals
NOTE Examples include the terminals of isolated temperature sensors and isolated gate driver inputs, etc.
3.3
classification of categories of isolated power devices
isolated power semiconductor devices are classified as follows:
3.3.1
chip content: types according to their main functional circuit elements
3.3.1.1
thyristor module
isolated power semiconductor device containing thyristor chips
3.3.1.2
diode module
isolated power semiconductor device containing diode chips
3.3.1.3
bipolar transistor module
isolated power semiconductor device containing bipolar transistor chips and their inverse
diode chips
3.3.1.4
IGBT module
isolated power semiconductor device containing isolated gate bipolar transistor (IGBT) chips
and their inverse diode chips
3.3.1.5
MOSFET module
isolated power semiconductor device containing MOSFET chips
3.3.2
circuit configuration: types according to their main functional circuit
3.3.2.1
single switch
one functional circuit element, the “semiconductor switch”, in one case (as the most simple
functional device) (see An
...
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