SIST EN 60747-15:2012
Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
This part of IEC 60747 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices.
Halbleiterbauelemente - Einzel-Halbleiterbauelemente - Teil 15: Isolierte Leistungshalbleiter
Dispositifs à semi-conducteurs - Dispositifs discrets - Partie 15: Dispositifs de puissance à semiconducteurs isolés
La CEI 60747-15:2010 donne les exigences relatives aux dispositifs de puissance à semi-conducteurs isolés avec circuits de commande intégrés. Ces exigences s'ajoutent à celles données dans d'autres parties de la CEI 60747 pour les dispositifs de puissance non-isolés correspondants. Les modifications principales par rapport à l'édition précédente sont les suivantes:
a) Les Articles 3, 4 et 5 ont été réédités et certains ont été associés à d'autres paragraphes.
b) Les Articles 6 et 7 ont été réédités et font partie des 'Méthodes de mesure' avec les ajouts et suppressions correspondants.
c) L'Article 8 a été modifié par les ajouts et suppressions appropriés correspondants.
d) Les Annexes C, D et la Bibliographie ont été supprimées.
Cette publication doit être lue conjointement avec la CEI 60747-1:2006.
Polprevodniški elementi - Diskretni elementi - 15. del: Izolirani močnostni polprevodniški elementi
Ta del standarda IEC 60747 opredeljuje zahteve za izolirane močnostne polprevodniške elemente in ne vključuje elementov z vgrajenimi krmilnimi tokokrogi. Te zahteve so dodatek k zahtevam iz drugih delov standarda IEC 60747 za ustrezne neizolirane močnostne elemente.
General Information
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Standards Content (Sample)
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Halbleiterbauelemente - Einzel-Halbleiterbauelemente - Teil 15: Isolierte LeistungshalbleiterDispositifs à semi-conducteurs - Dispositifs discrets - Partie 15: Dispositifs de puissance à semiconducteurs isolésSemiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices31.080.01Polprevodniški elementi (naprave) na splošnoSemiconductor devices in generalICS:Ta slovenski standard je istoveten z:EN 60747-15:2012SIST EN 60747-15:2012en01-maj-2012SIST EN 60747-15:2012SLOVENSKI
STANDARD
SIST EN 60747-15:2012
EUROPEAN STANDARD EN 60747-15 NORME EUROPÉENNE
EUROPÄISCHE NORM March 2012
CENELEC European Committee for Electrotechnical Standardization Comité Européen de Normalisation Electrotechnique Europäisches Komitee für Elektrotechnische Normung
Management Centre: Avenue Marnix 17, B - 1000 Brussels
© 2012 CENELEC -
All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60747-15:2012 E
ICS 31.080.99 Supersedes EN 60747-15:2004
English version
Semiconductor devices -
Discrete devices -
Part 15: Isolated power semiconductor devices (IEC 60747-15:2010)
Dispositifs à semi-conducteurs -
Dispositifs discrets -
Partie 15: Dispositifs de puissance à semiconducteurs isolés (CEI 60747-15:2010)
Halbleiterbauelemente -
Einzel-Halbleiterbauelemente -
Teil 15: Isolierte Leistungshalbleiter (IEC 60747-15:2010)
This European Standard was approved by CENELEC on 2011-01-20. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom.
SIST EN 60747-15:2012
EN 60747-15:2012 - 2 -
Foreword The text of document 47E/403/FDIS, future edition 2 of IEC 60747-15, prepared by SC 47E, "Discrete semiconductor devices", of IEC TC 47, "Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60747-15:2012. The following dates are fixed: – latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement
(dop)
2012-09-16 – latest date by which the national standards conflicting
with the EN have to be withdrawn
(dow)
2014-01-20 This European Standard supersedes EN 60747-15:2004. The main changes with respect to EN 60747-15:2004 are listed below. a) Clause 3, 4 and 5 were re-edited and some of them were combined to other sub clauses. b) Clause 6, 7 were re-edited as a part of “Measuring methods” with amendment of suitable addition and deletion. c) Clause 8 was amended by suitable addition and deletion. d) Annex C, D and Bibliography were deleted. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent rights. __________ Endorsement notice The text of the International Standard IEC 60747-15:2010 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following notes have to be added for the standards indicated: IEC 60112 NOTE
Harmonized as EN 60112. IEC 61287-1:2005 NOTE
Harmonized as EN 61287-1:2006 (not modified). __________
SIST EN 60747-15:2012
- 3 - EN 60747-15:2012 Annex ZA (normative)
Normative references to international publications with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
NOTE
When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies.
Publication Year Title EN/HD Year
IEC 60270 - High-voltage test techniques - Partial discharge measurements EN 60270 -
IEC 60664-1 2007 Insulation coordination for equipment within low-voltage systems -
Part 1: Principles, requirements and tests EN 60664-1 2007
IEC 60721-3-3 1994 Classification of environmental conditions - Part 3: Classification of groups of environmental parameters and
their severities - Section 3: Stationary use at weatherprotected locations EN 60721-3-3 1995
IEC 60747-1 2006 Semiconductor devices -
Part 1: General - -
IEC 60747-2 - Semiconductor devices - Discrete devices and integrated circuits -
Part 2: Rectifier diodes - -
IEC 60747-6 - Semi conductor devices -
Part 6: Thyristors - -
IEC 60747-7 - Semiconductor devices -
Part 7: Bipolar transistors - -
IEC 60747-8 - Semiconductor devices -
Part 8: Field-effect transistors - -
IEC 60747-9 - Surface mounting technology - Discrete devices -
Part 9: Insulated-gate bipolar transistors (IGBTs) - -
IEC 60749-5 - Semiconductor devices - Mechanical and climatic test methods -
Part 5: Steady-state temperature humidity bias life test EN 60749-5 -
IEC 60749-6 - Semiconductor devices - Mechanical and climatic test methods -
Part 6: Storage at high temperature EN 60749-6 -
IEC 60749-10 - Semiconductor devices - Mechanical and climatic test methods -
Part 10: Mechanical shock EN 60749-10 -
IEC 60749-12 - Semiconductor devices - Mechanical and climatic test methods -
Part 12: Vibration, variable frequency EN 60749-12 -
SIST EN 60747-15:2012
EN 60747-15:2012 - 4 -
Publication Year Title EN/HD Year IEC 60749-15 - Semiconductor devices - Mechanical and climatic test methods -
Part 15: Resistance to soldering temperature for through-hole mounted devices EN 60749-15 -
IEC 60749-21 - Semiconductor devices - Mechanical and climatic test methods -
Part 21: Solderability EN 60749-21 -
IEC 60749-25 - Semiconductor devices - Mechanical and climatic test methods -
Part 25: Temperature cycling EN 60749-25 -
IEC 60749-34 - Semiconductor devices - Mechanical and climatic test methods -
Part 34: Power cycling EN 60749-34 -
SIST EN 60747-15:2012
IEC 60747-15 Edition 2.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices – Discrete devices –
Part 15: Isolated power semiconductor devices
Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 15: Dispositifs de puissance à semiconducteurs isolés
INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE T ICS 31.080.99 PRICE CODECODE PRIXISBN 978-2-88912-310-0
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale ® SIST EN 60747-15:2012
– 2 – 60747-15 Ó IEC:2010 CONTENTS FOREWORD . 4 1 Scope . 6 2 Normative references . 6 3 Terms and definitions . 7 4 Letter symbols . 8 4.1 General . 8 4.2 Additional subscripts/symbols . 8 4.3 List letter symbols . 8 4.3.1 Voltages and currents . 8 4.3.2 Mechanical symbols . 8 4.3.3 Other symbols . 9 5 Essential ratings (limiting values) and characteristics . 9 5.1 General . 9 5.2 Ratings (limiting values). 9 5.2.1 Isolation voltage (Visol) . 9 5.2.2 Peak case non-rupture current (IRSMC or ICNR) (where appropriate). 9 5.2.3 Terminal current (ItRMS) (where appropriate), . 9 5.2.4 Total power dissipation (Ptot) . 9 5.2.5 Temperatures . 9 5.2.6 Mechanical ratings . 10 5.2.7 Climatic ratings (where appropriate) . 10 5.3 Characteristics . 10 5.3.1 Mechanical characteristics . 10 5.3.2 Parasitic inductance (Lp) . 11 5.3.3 Parasitic capacitances (Cp) . 11 5.3.4 Partial discharge inception voltage (ViM or Vi(RMS)) (where appropriate) . 11 5.3.5 Partial discharge extinction voltage (VeM or Ve(RMS)) (where appropriate) . 11 5.3.6 Thermal resistances . 11 5.3.7 Transient thermal impedance (Zth) . 12 6 Measurement methods . 12 6.1 Verification of isolation voltage rating between terminals and base plate (Visol) . 12 6.2 Methods of measurement . 13 6.2.1 Partial discharge inception and extinction voltages (Vi) (Ve) . 13 6.2.2 Parasitic inductance (Lp) . 13 6.2.3 Parasitic capacitance terminal to case (Cp) . 15 6.2.4 Thermal characteristics . 16 7 Acceptance and reliability . 18 7.1 General requirements . 18 7.2 List of endurance tests . 19 7.3 Acceptance defining criteria . 19 7.4 Type tests and routine tests . 19 7.4.1 Type tests . 19 7.4.2 Routine tests . 20 Annex A (informative)
Test method of peak case non-rupture current . 21 SIST EN 60747-15:2012
60747-15 Ó IEC:2010 – 3 – Annex B (informative)
Measuring method of the thickness of thermal compound paste . 24 Bibliography . 25
Figure 1 – Basic circuit diagram for isolation breakdown withstand voltage test (“high pot test”) with Visol . 12 Figure 2 – Circuit diagram for measurement of parasitic inductances (Lp) . 14 Figure 3 – Wave forms . 15 Figure 4 – Circuit diagram for measurement of parasitic capacitance Cp . 16 Figure 5 – Cross-section of an isolated power device with reference points for temperature measurement of Tc and Ts . 17 Figure A.1 – Circuit diagram for test of peak case non-rupture current ICNR . 21 Figure B.1 – Example of a measuring gauge for a layer of thermal compound paste
of a thickness between 5 mm and 150 mm . 24
Table 1 – Endurance tests . 19 Table 2 – Acceptance defining characteristics for endurance and reliability tests . 19 Table 3 – Minimum type and routine tests for isolated power semiconductor devices . 20
SIST EN 60747-15:2012
– 4 – 60747-15 Ó IEC:2010 INTERNATIONAL ELECTROTECHNICAL COMMISSION ____________
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 15: Isolated power semiconductor devices
FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60747-15 has been prepared by subcommittee 47E: Discrete semiconductor devices, of IEC technical committee 47: Semiconductor devices. This second edition of IEC 60747-15 cancels and replaces the first edition published in 2003. The main changes with respect to previous edition are listed below. a) Clause 3, 4 and 5 were re-edited and some of them were combined to other sub clauses. b) Clause 6, 7 were re-edited as a part of “Measuring methods” with amendment of suitable addition and deletion. c) Clause 8 was amended by suitable addition and deletion. d) Annex C, D and Bibliography were deleted. SIST EN 60747-15:2012
60747-15 Ó IEC:2010 – 5 – The text of this standard is based on the following documents: FDIS Report on voting 47E/403/FDIS 47E/407/RVD
Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. This International Standard is to be read in conjunction with IEC 60747-1:2006. A list of all the parts in the IEC 60747 series, under the general title Semiconductor devices – Discrete devices, can be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data related to the specific publication. At this date, the publication will be
• reconfirmed, • withdrawn, • replaced by a revised edition, or • amended.
SIST EN 60747-15:2012
– 6 – 60747-15 Ó IEC:2010 SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 15: Isolated power semiconductor devices
1 Scope This part of IEC 60747 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices.
2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60270, High-voltage test techniques – Partial discharge measurements
IEC 60664-1:2007, Insulation coordination for equipment within low-voltage systems – Part 1: Principles, requirements and tests
IEC 60721-3-3:1994, Classification of environmental conditions – Part 3-3: Classification of groups of environmental parameters and their severities – Stationary use at weather protected locations IEC 60747-1:2006, Semiconductor devices – Part 1: General IEC 60747-2, Semiconductor devices – Discrete devices and integrated circuits – Part 2: Rectifier diodes IEC 60747-6, Semiconductor devices – Part 6: Thyristors IEC 60747-7, Semiconductor discrete devices and integrated circuits – Part 7: Bipolar transistors
IEC 60747-8, Semiconductor devices – Part 8: Field-effect transistors IEC 60747-9, Semiconductor devices – Discrete devices – Part 9: Insulated-gate bipolar transistors (IGBTs) IEC 60749-5, Semiconductor devices – Mechanical and climatic test methods – Part 5: Steady-state temperature humidity bias life test IEC 60749-6, Semiconductor devices – Mechanical and climatic test methods – Part 6: Storage at high temperature IEC 60749-10, Semiconductor devices – Mechanical and climatic test methods – Part 10: Mechanical shock IEC 60749-12, Semiconductor devices – Mechanical and climatic test methods – Part 12: Vibration, variable frequency SIST EN 60747-15:2012
60747-15 Ó IEC:2010 – 7 – IEC 60749-15, Semiconductor devices – Mechanical and climatic test methods – Part 15: Resistance to soldering temperature for through-hole mounted devices IEC 60749-21, Semiconductor devices – Mechanical and climatic test methods – Part 21: Solderability IEC 60749-25, Semiconductor devices – Mechanical and climatic test methods – Part 25: Temperature cycling IEC 60749-34, Semiconductor devices – Mechanical and climatic test methods – Part 34: Power cycling 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1
isolated power semiconductor device
semiconductor power device that contains an integral electrical insulator between the cooling surface or base plate and any isolated circuit elements 3.2 Constituent parts of the isolated power semiconductor device 3.2.1
switch
any single component that performs a switching function in a electrical circuit, e.g. diode, thyristor, MOSFET, etc.
NOTE A switch might be a parallel or series connection of several chips with a single functionality. 3.2.2
base plate part of the package having a cooling surface that transfers the heat from inside to outside 3.2.3
main terminal terminal having a high potential of the power circuit and carrying the main current. The main terminal can comprise more than one physical connector. 3.2.4
control terminal terminal having a low current capability for the purpose of control function, to which the external control signals are applied or from which sensing parameters are taken 3.2.4.1
high voltage control terminal terminal
electrically connected to an isolated circuit element, but carrying only low current for control function NOTE Examples include current shunts and collector sense terminals having the high potential of the main terminals. 3.2.4.2
low voltage control terminal terminal having a control function and isolated from the high voltage control terminals
NOTE Examples include the terminals of isolated temperature sensors and isolated gate driver inputs etc.
SIST EN 60747-15:2012
– 8 – 60747-15 Ó IEC:2010 3.2.5
insulation layer integrated part of the device case that insulates any part having high potential from the cooling surface or external heat sink and any isolated circuit element 3.3
peak case non-rupture current
peak current, which will not lead to a rupture of the package, ejecting plasma and massive particles under specified conditions
3.4
thermal interface material heat conducting material between base plate and external heat sink 4 Letter symbols 4.1 General General letter symbols are defined in Clause 4 of IEC 60747-1:2006. 4.2 Additional subscripts/symbols
p
= parasitic t = terminal
isol
= isolation m
= mount 4.3 List letter symbols 4.3.1 Voltages and currents Terminal current
ItRMS Isolation voltage
Visol Partial discharge inception voltage
Vi
Partial discharge extinction voltage
Ve
Isolation leakage current
Iisol Peak case non-rupture current (for diode and thyristor devices) IRSMC Peak case non-rupture current (for IGBT and MOSFET devices) ICNR 4.3.2 Mechanical symbols Mounting torque for screws to heat sink Ms Mounting torque for terminal screws
Mt Mounting force F Maximum acceleration in all 3 axis (x, y, z)
a Mass m Flatness of the case (base-plate)
ec Flatness of the cooling surface (heat sink)
es Roughness of the case (base plate)
RZc Roughness of the cooling surface (heat sink)
RZs Thickness of thermal interface material (case - sink) d(c-s) SIST EN 60747-15:2012
60747-15 Ó IEC:2010 – 9 – 4.3.3 Other symbols Total maximum power dissipation per switch at Tc = 25 °C Ptot Parasitic inductance, effective between terminals and chips (to be specified)
Lp Parasitic capacitance between terminals and cooling surface (case, base plate, ground) Cp
Lead resistance between terminal x and related switch x’ rxx’ Terminal temperature Tt Number of power load cycles until failure of a percentage p of a population of devices Nf;p 5 Essential ratings (limiting values) and characteristics 5.1 General Isolated power semiconductor devices should be specified as case rated or heat-sink rated devices. The ratings and characteristics should be quoted at a temperature of 25 °C or another specified elevated temperature. Requirements for multiple devices having a common encapsulation see 5.12 of IEC 60747-1:2006. 5.2 Ratings (limiting values) 5.2.1 Isolation voltage (Visol) Maximum r. m. s. or d. c. value between main terminals and high voltage control terminals at one side and low voltage control terminals (where appropriate) and base plate at the other side for a specified time 5.2.2 Peak case non-rupture current (IRSMC or ICNR) (where appropriate) Maximum value for each main terminal that does not cause the bursting of the case or emission of plasma and particles 5.2.3 Terminal current (ItRMS) (where appropriate),
Maximum r. m. s. value of the current through the main terminal under specified conditions at minimum mounting torque Mt and maximum allowed terminal temperature (Ttmax = Tstg or Ttmax £ Tvjmax) 5.2.4 Total power dissipation (Ptot)
Maximum value per switch at Tc = 25 °C (or Ts = 25 °C), when Tvj = Tvjmax, at d.c. load.
5.2.5 Temperatures
5.2.5.1 Solder temperature (Tsold) Maximum solder temperature Tsold during solder process over a specified solder processing time tsold 5.2.5.2 Storage temperature (Tstg) Minimum and maximum storage temperature SIST EN 60747-15:2012
– 10 – 60747-15 Ó IEC:2010 5.2.6 Mechanical ratings 5.2.6.1 Mounting torque of screws to heat sink (Ms)
Minimum mounting torque that shall be applied to the fixing screws to the heat sink
5.2.6.2 Mounting torque of screws to terminals (Mt)
Minimum mounting torque that shall be applied to screwed terminals
5.2.6.3 Mounting force (F)
Minimum mounting force for pressure mounted devices, fixed by clips, that shall be applied to the isolated pressure contact device
5.2.6.4 Terminal pull-out force (Ft ) Maximum force
5.2.6.5 Acceleration (a)
Maximum value along each axis (x, y, z)
5.2.6.6 Flatness of the heatsink surface (eS) (where appropriate) Maximum deviation from flatness for the heatsink surface over the whole mounting area 5.2.6.7 Roughness of the heatsink surface (RZS) (where appropriate) Maximum roughness of the heatsink surface over the whole mounting area 5.2.7 Climatic ratings (where appropriate) Limiting values of environmental parameters for the final application as follows – ambient temperature – humidity – speed and pressure of air – irradiation by sun and other heat sources – mechanical active substances – chemically active substances – biological issues shall be described in classes as specified in
IEC 60721-3-3:1994,
Table 1.
5.3 Characteristics 5.3.1 Mechanical characteristics 5.3.1.1 Creepage distance along surface (ds) Minimum value of distance along surface of the insulating material of the device between terminals of different potential and to base plate
NOTE 1 IEC 60112 (details to comparative tracking index “CTI”) and IEC 60664-1:2007 Subclause 5.2 apply. NOTE 2 Air gaps between plastic surface and grounded metal or between terminals of opposite polarity smaller than 1,0 mm (for pollution degree 2), or 1,5 mm (pollution degree 3) shorten the countable creepage distance considerably (details see 60664-1:2007, examples). This is essential, if dust, moisture or dirt starts to cover the SIST EN 60747-15:2012
60747-15 Ó IEC:2010 – 11 – surface and increases the leakage current over surface, which might start burning the plastic encapsulation material.
5.3.1.2 Clearance distance in air (da) Minimum value of distance through air between terminals of different potential of the isolated device and to base plate NOTE For details, see IEC 60664-1:2007, (Subclause 4.6 and Subclause 5.1) which shows typical examples of various shapes of clearance distances. 5.3.1.3 Mass (m) of the device
Maximum value excluding accessories (mounting hardware). 5.3.1.4 Flatness of the base plate (eC) (where appropriate) Maximum and minimum allowed deviation from flatness for the base plate and its direction (convex or concave). 5.3.2 Parasitic inductance (Lp) Maximum or typical value between the main terminals of each main current path. 5.3.3 Parasitic capacitances (Cp) Maximum value of parasitic capacitance between the specified main terminal(s) and the cooling surface. 5.3.4 Partial discharge inception voltage (ViM or Vi(RMS)) (where appropriate)
Minimum peak value ViM or r.m.s. value Vi(RMS) between the isolated terminals and the base plate (details, see IEC 60270). 5.3.5 Partial discharge extinction voltage (VeM or Ve(RMS)) (where appropriate) Minimum peak value VeM or r
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