ASTM F616M-96
(Test Method)Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
SCOPE
1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.
Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.
1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.
1.3 The d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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Standards Content (Sample)
NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 616M – 96
METRIC
Standard Test Method for
1
Measuring MOSFET Drain Leakage Current [Metric]
This standard is issued under the fixed designation F 616M; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope 4.2 Before this test method can be implemented, test con-
ditions appropriate for the MOSFET to be measured must be
1.1 This test method covers the measurement of MOSFET
selected and agreed upon by the parties to the test. Conditions
(Note 1) drain leakage current.
will vary from one MOSFET type to another and are deter-
NOTE 1—MOS is an acronym for metal-oxide semiconductor; FET is
mined in part by the intended application. The following items
an acronym for field-effect transistor.
are not specified by this test method, and shall be agreed upon
1.2 This test method is applicable to all enhancement-mode
between the parties to the test.
and depletion-mode MOSFETs. This test method specifies
4.2.1 Permissible range of ambient temperature.
positive voltage and current, conventions specifically appli-
4.2.2 Drain to source voltage V at which the measurement
DS
cable to n-channel MOSFETs. The substitution of negative
is to be made.
voltage and negative current makes the method directly appli-
4.2.3 Gate to source voltage V at which the measurement
GS
cable to p-channel MOSFETs.
is to be made. For most MOSFETs, use a gate voltage
1.3 This d-c test method is applicable for the range of drain
approximately 5 V different from the saturated threshold
voltages greater than 0 V but less than the drain breakdown
voltage, in the direction of lesser drain current.
voltage.
NOTE 2—To avoid the possibility of forward biasing the gate protection
1.4 This standard does not purport to address all of the
diodes, the gate should not be permitted to have a potential with respect
safety concerns, if any, associated with its use. It is the
to the substrate (or source, if no substrate connection is provided) of a sign
responsibility of the user of this standard to establish appro-
opposite that of the drain potential with respect to the substrate (or
priate safety and health practices and determine the applica-
source), unless the manufacturer’s specifications expressly permit such a
condition.
bility of regulatory limitations prior to use.
5. Significance and Use
2. Referenced Documents
5.1 The drain leakage current is a basic MOSFET parameter
2.1 ASTM Standards:
2
that must be determined for the design and application of
E 178 Practice for Dealing with Outlying Observations
discrete MOSFETs and MOS-integrated circuits. The drain
3. Terminology
leakage current of the MOSFET is utilized in circuit design to
determine performance attributes such as power dissipation,
3.1 Definition:
noise margin, charge storage time, amplifier effects, etc., of
3.1.1 drain leakage current of a MOSFET—the d-c current
digital and analog circuitry.
from the drain terminal when the relationship of the gate
voltage to the threshold voltage is such that the MOSFET is in
6. Interferences
the OFF state.
6.1 Care must be taken to prevent electrical voltage over-
4. Summary of Test Method
stress damage to the gate dielectric as a result of device
handling during the leakage current measurement. Under
4.1 The drain current of the MOSFET under test is mea-
certain conditions, electrostatic discharge from the human
sured at a specified drain voltage with the MOSFET in the OFF
body can result in permanent damage to the gate insulator.
condition.
6.2 Valid drain leakage current data will be obtained only if
the magnitude of the drain voltage applied during the drain
1
This test method is under the jurisdiction of ASTM Committee F-1 on
leakage current measurement is less than the drain-substrate
Electronics and is the direct responsibility of Subcommittee F01.11 on Quality and
junction breakdown voltage.
Hardness Assurance.
Current edition approved June 10, 1996. Published August 1996. Originally
published as F 616 – 80. Last previous edition F 616 – 92.
2
Annual Book of ASTM Standards, Vol 14.02.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
F 616M – 96
6.3 The high (positive) input of the ammeter (A1) must 7.5 Temperature-Measuring Device, capable of measuring
always be connected to the drain side of the MOSFET, the temperature in the vicinity
...
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