ASTM F2113-01

Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications

SCOPE
1.1 This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.
1.2 This standard sets purity grade levels, analytical methods and impurity content reporting method and format.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

General Information

• Status: Historical
• Publication Date: 09-Jun-2001
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.17 - Sputter Metallization

Relations

• Replaced By: ASTM F2113-01e1 - Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications
• Effective Date: 10-Jun-2001
• Referred By: ASTM F3192-16 - Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization (Withdrawn 2023)
• Effective Date: 10-Jun-2001

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 2113 – 01
Standard Guide for
Analysis and Reporting the Impurity Content and Grade of
High Purity Metallic Sputtering Targets for Electronic Thin
Film Applications
This standard is issued under the fixed designation F 2113; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope be specified in the target specification. Elements not detected
will be counted and reported as present at the minimum
1.1 This guide covers sputtering targets used as thin film
detection limit (“mdl”) for the method used. Additional ele-
source material in fabricating semiconductor electronic de-
ments may be analyzed and reported as agreed upon between
vices. It should be used to develop target specifications for
the purchaser and the supplier, but these elements shall not be
specific materials and should be referenced therein.
counted in defining the grade designation.
1.2 This standard sets purity grade levels, analytical meth-
4.3 Certain elements may present particular analysis prob-
ods and impurity content reporting method and format.
lems, such as interferences. The limits, analysis method, and
1.2.1 The grade designation is a measure of total metallic
mdl may, in such cases, be as agreed upon between the
impurity content. The grade designation does not necessarily
purchaser and the supplier.
indicate suitability for a particular application because factors
4.4 Nonmetallic elements, which shall be analyzed and
other than total metallic impurity may influence performance.
reported, are carbon, hydrogen, nitrogen, oxygen, and sulfur.
2. Referenced Documents Maximum limits for nonmetallic impurities shall be agreed
upon between the purchaser and the supplier.
2.1 ASTM Standards:
4.5 Acceptable limits and analytical techniques for particu-
F 1593 Test Method for Trace Metallic Impurities in Elec-
lar elements in critical applications may be agreed upon
tronic Grade Aluminum by High Mass-Resolution Glow-
between the purchaser and the supplier.
Discharge Mass Spectrometer
5. Classification
3. Terminology
5.1 Grades of metallic sputtering targets are defined in Table
3.1 Definitions of Terms Specific to This Standard:
1, based upon total metallic impurity content of the set of
3.1.1 finished product, n—for the purpose of this standard,
elements as specified in 4.1. Impurity contents are reported in
a “finished product” is a manufactured sputtering target, ready
parts per million by weight (wt ppm).
for use.
5.2 Purity grade and total metallic impurity levels are based
3.1.2 material lot, n—for the purpose of this standard,a
upon the set of elements as specified in 4.1.
“lot” is material consolidated into one ingot, and processed as
one continuous batch in subsequent thermal-mechanical treat-
6. Sampling
ments.
6.1 Analysis for impurities and gases shall be performed on
3.1.3 target specification, n—for the purpose of this stan-
samples that represent the finished sputtering target.
dard, a specification for a sputtering target source material for
6.1.1 Unless otherwise agreed upon between the purchaser
electronic thin film applications.
and the supplier, impurity analyses for metallic and nonmetal-
3.2 Abbreviations:
lic impurities shall be made by the supplier for one or more
3.2.1 mdl—minimum detection limit
sample specimens that are representative of the production lot.
4. Impurities If more than one sample specimen is used, the results of the
analyses shall be averaged to establish conformance with the
4.1 The minimum set of metallic impurity elements to be
grade designation (5.1), other metallic impurity limits (4.2, 4.3,
analyzed shall be developed and listed in the target specifica-
and 4.5), and the agreed upon limits for nonmetallic content
tion or agreed upon by the purchaser and supplier.
(4.4).
4.2 Acceptable analysis methods and detection limits are to
7. Analytical Methods
This guide is under the jurisdiction of ASTM Committee F01 on Electronics
7.1 Analysis for impurities listed as specified in Section 4
and is the direct responsibility of Subcommittee F01.17 on Sputtered Thin Films.
shall be performed using meth
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