ASTM F1190-99(2005)
(Practice)Standard Guide for Neutron Irradiation of Unbiased Electronic Components
Standard Guide for Neutron Irradiation of Unbiased Electronic Components
SIGNIFICANCE AND USE
Semiconductor devices are permanently damaged by reactor spectrum neutrons. The effect of such damage on the performance of an electronic component can be determined by measuring the component electrical characteristics before and after exposure to fast neutrons in the neutron fluence range of interest. The resulting data can be utilized in the design of electronic circuits that are tolerant of the degradation exhibited by that component.
This guide provides a method by which the exposure of silicon and gallium arsenide semiconductor devices to neutron irradiation may be performed in a manner that is repeatable and which will allow comparison to be made of data taken at different facilities.
For semiconductors other than silicon and gallium arsenide, this guide provides a method that can improve consistency in the measurements and assurance that data from various facilities can be compared on the same equivalence fluence scale when the applicable validated 1-MeV damage functions are codified in National standards. In the absence of a validated 1-MeV damage function, the non-ionizing energy loss (NIEL) as a function incident neutron energy, normalized to the NIEL at 1 MeV, may be used as an approximation. See Practice E 722 for a description of the method.
SCOPE
1.1 This guide strictly applies only to the exposure of unbiased silicon (SI) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation from a nuclear reactor source to determine the permanent damage in the components. Validated 1-MeV damage functions codified in National Standards are not currently available for other semiconductor materials.
1.2 Elements of this guide with the deviations noted may also be applicable to the exposure of semiconductors comprised of other materials except that validated 1-MeV damage functions codified in National standards are not currently available.
1.3 Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined using appropriate electrical test methods.
1.4 This guide addresses those issues and concerns pertaining to irradiations with reactor spectrum neutrons.
1.5 System and subsystem exposures and test methods are not included in this guide.
1.6 This guide is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 109 to 1016 n/cm 2.
1.7 This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.
1.8 This guide provides an alternative to Test Method 1017.3, Neutron Displacement Testing, a component of MIL-STD-883 and MIL-STD-750. The Department of Defense has restricted use of these MIL-STDs to programs existing in 1995 and earlier.
This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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Designation:F1190–99(Reapproved2005)
Standard Guide for
Neutron Irradiation of Unbiased Electronic Components
This standard is issued under the fixed designation F1190; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 2. Referenced Documents
1.1 This guide strictly applies only to the exposure of 2.1 ASTM Standards:
unbiased silicon (SI) or gallium arsenide (GaAs) semiconduc- E170 TerminologyRelatingtoRadiationMeasurementsand
tor components (integrated circuits, transistors, and diodes) to Dosimetry
neutron radiation from a nuclear reactor source to determine E264 Test Method for Measuring Fast-Neutron Reaction
the permanent damage in the components. Validated 1-MeV Rates by Radioactivation of Nickel
damage functions codified in National Standards are not E265 Test Method for Measuring Reaction Rates and Fast-
currently available for other semiconductor materials. Neutron Fluences by Radioactivation of Sulfur-32
1.2 Elements of this guide with the deviations noted may E668 Practice for Application of Thermoluminescence-
also be applicable to the exposure of semiconductors com- Dosimetry(TLD)SystemsforDeterminingAbsorbedDose
prised of other materials except that validated 1-MeV damage in Radiation-Hardness Testing of Electronic Devices
functions codified in National standards are not currently E720 Guide for Selection and Use of Neutron Sensors for
available. Determining Neutron Spectra Employed in Radiation-
1.3 Only the conditions of exposure are addressed in this Hardness Testing of Electronics
guide. The effects of radiation on the test sample should be E721 Guide for Determining Neutron Energy Spectra from
determined using appropriate electrical test methods. Neutron Sensors for Radiation-Hardness Testing of Elec-
1.4 This guide addresses those issues and concerns pertain- tronics
ing to irradiations with reactor spectrum neutrons. E722 Practice for Characterizing Neutron Fluence Spectra
1.5 System and subsystem exposures and test methods are inTerms of an Equivalent Monoenergetic Neutron Fluence
not included in this guide. for Radiation-Hardness Testing of Electronics
1.6 This guide is applicable to irradiations conducted with E1249 Practice for Minimizing Dosimetry Errors in Radia-
the reactor operating in either the pulsed or steady-state mode. tion Hardness Testing of Silicon Electronic Devices Using
The range of interest for neutron fluence in displacement Co-60 Sources
damage semiconductor testing range from approximately 10 E1250 Test Method forApplication of Ionization Chambers
16 2
to 10 n/cm . to Assess the Low Energy Gamma Component of
1.7 This guide does not address neutron-induced single or Cobalt-60 Irradiators Used in Radiation-Hardness Testing
multiple neutron event effects or transient annealing. of Silicon Electronic Devices
1.8 This guide provides an alternative to Test Method E1854 Practice for Ensuring Test Consistency in Neutron-
1017.3, Neutron Displacement Testing, a component of MIL- Induced Displacement Damage of Electronic Parts
STD-883 and MIL-STD-750. The Department of Defense has F980M Guide for Measurement of Rapid Annealing of
restricted use of these MIL-STDs to programs existing in 1995 Neutron-Induced Displacement Damage in Silicon Semi-
and earlier. conductor Devices (Metric)
1.9 This standard does not purport to address all of the F1892 Guide for Ionizing Radiation (Total Dose) Effects
safety concerns, if any, associated with its use. It is the Testing of Semiconductor Devices
responsibility of the user of this standard to establish appro- 2.2 Other Documents:
priate safety and health practices and determine the applica- 2.2.1 The Department of Defense publishes every few
bility of regulatory limitations prior to use. years a compendium of nuclear reactor facilities that may be
suitable for neutron irradiation of electronic components:
This guide is under the jurisdiction of ASTM Committee F01 on Electronics
and is the direct responsibility of Subcommittee F01.11 on Quality and Hardness
Assurance. For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Current edition approved Jan. 1, 2005. Published January 2005. Originally contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
approved in 1988. Last previous edition approved in 1999 as F1190 – 99. DOI: Standards volume information, refer to the standard’s Document Summary page on
10.1520/F1190-99R05. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
F1190–99 (2005)
DASIAC SR-94-009, April 1996, Guide to Nuclear Weap- Practice E1854 contains detailed guidance to assist the user in
ons Effects Simulation Facilities and Techniques selecting a reactor facility that is certified to be adequately
2.3 The Office of the Federal Register, National Archives calibrated.
and Records Administration publishes several documents that 4.1.2 Prepare test plan and fixtures,
delineate the regulatory requirements for handling and trans- 4.1.3 Conduct pre-irradiation electrical test of the test
porting radioactive semiconductor components: sample,
Code of Federal Regulations: Title 10 (Energy), Part 20, 4.1.4 Expose test sample and dosimeters,
Standards for Protection Against Radiation 4.1.5 Retrieve irradiated test sample,
Code of Federal Regulations: Title 10 (Energy), Part 30, 4.1.6 Read dosimeters,
Rules of General Applicability to Domestic Licensing of 4.1.7 Conduct post-irradiation electrical tests, and
Byproduct Material 4.1.8 Repeat 4.1.4 through 4.1.7 until the desired cumula-
Code of Federal Regulations: Title 49 (Transportation), tive fluence is achieved or until degradation of the test device
Parts 100 to 177 will not allow any further useful data to be taken.
4.2 Operations addressed in this guide are only those
3. Terminology
relating to reactor facility selection, irradiation procedure and
fixture development, positioning and exposure of the test
3.1 1 MeV equivalent fluence—this expression is used by
sample, and shipment of the irradiated samples to the parent
the radiation-hardness testing community to refer to the char-
facility. Dosimetry methods are covered in existing ASTM
acterization of an incident neutron energy fluence spectrum,
standards referenced in Section 2, and many pre- and post-
F(E), in terms of the fluence of monoenergetic neutrons at 1
exposure electrical measurement procedures are contained in
MeV energy required to produce the same displacement
the literature. Dosimetry is usually supplied by the reactor
damage in a specified irradiated material as F(E) (see Practice
facility.
E722 for details).
3.1.1 Discussion—Historically, the material has been as-
5. Significance and Use
sumed to be silicon (Si). The emergence of gallium arsenide
5.1 Semiconductor devices are permanently damaged by
(GaAs) as a significant alternate semiconductor material,
reactor spectrum neutrons. The effect of such damage on the
whose radiation damage effects mechanisms differ substan-
performance of an electronic component can be determined by
tially from Si based devices, requires that future use of the 1
measuring the component electrical characteristics before and
MeV equivalent fluence expression include the explicit speci-
after exposure to fast neutrons in the neutron fluence range of
fication of the irradiation semiconductor material.
interest. The resulting data can be utilized in the design of
3.2 silicon damage equivalent (SDE)—expression synony-
electronic circuits that are tolerant of the degradation exhibited
mous with “1 MeV equivalent fluence in silicon.”
by that component.
3.3 equivalent monoenergetic neutron fluence
5.2 This guide provides a method by which the exposure of
(F )—an equivalent monoenergetic neutron fluence
eq,Eref, mat.
silicon and gallium arsenide semiconductor devices to neutron
that characterizes an incident energy-fluence spectrum, F(E),
irradiationmaybeperformedinamannerthatisrepeatableand
in terms of the fluence of monoenergetic neutrons at a specific
which will allow comparison to be made of data taken at
energy, Eref, required to produce the same displacement
different facilities.
damage in a specified irradiated material, mat (see Practice
5.3 For semiconductors other than silicon and gallium
E722 for details).
arsenide, this guide provides a method that can improve
3.3.1 Discussion—The appropriate expressions for com-
consistency in the measurements and assurance that data from
monly used 1 MeV equivalent fluence are F for
eq, 1 MeV, Si
various facilities can be compared on the same equivalence
silicon semiconductor devices and F for gallium
eq, 1 MeV, GaAs
fluence scale when the applicable validated 1-MeV damage
arsenide based devices. See Practice E722 for a more thorough
functions are codified in National standards. In the absence of
treatment of the meaning and significant limitations imposed
a validated 1-MeV damage function, the non-ionizing energy
on the use of these expressions.
loss (NIEL) as a function incident neutron energy, normalized
to the NIEL at 1 MeV, may be used as an approximation. See
4. Summary of Guide
Practice E722 for a description of the method.
4.1 Evaluation of neutron radiation-induced damage in
semiconductor components and circuits requires that the fol-
6. Interferences
lowing steps be taken:
6.1 Gamma Effects:
4.1.1 Select a suitable reactor facility where the radiation
6.1.1 All nuclear reactors produce gamma radiation coinci-
environment and exposure geometry desired are both available
dent with the production of neutrons. Gamma rays are pro-
and currently characterized (within the last 15 months). A
duced in the fission process directly and are emitted by fission
reasonably complete list is contained in DASIAC SR-94-009.
products and activated materials. Furthermore, these gamma
rays produce secondary gamma rays and fluorescence photons
in reactor fuel, moderator, and surrounding materials. Conse-
Available from Defense Special Weapons Agency, Washington, DC 20305-
quently, degradation in piecepart performance may be pro-
1000.
duced by gamma rays as well as neutrons, and because of the
Available from the Superintendent of Documents, U.S. Government Printing
Office, Washington, DC 20402. softer photon spectra dose enhancement may be a problem. If
F1190–99 (2005)
a separation of neutron (n) and gamma ray (g) degradation is however, TRIGA reactors inherently produce a very large
desired, either the n/g ratio must be increased to the point at thermal neutron flux. Neutrons interact with the materials of
which gamma effects are negligible or the test sample degra- the devices being irradiated causing them to become radioac-
dation must first be characterized in a “pure” gamma ray tive. Thermal neutrons generally induce higher levels of
environment under zero bias conditions. The use of such data
radioactivity. As a consequence, parts irradiated at TRIGA
from a gamma ray exposure to separate neutron and gamma reactors to moderate or high levels should not be handled or
effects obtained during a neutron exposure may be a complex measured soon after exposure. It is therefore common practice
task. If this approach is taken, Guide F1892 should be used as at TRIGA reactors to shield test parts from the thermal
a reference. Guides E1249 and E1250 should be used to neutrons with borated polyethylene or cadmium shields. Cad-
address dose enhancement issues. mium capture of thermal neutrons produces more gamma rays
thanboroncapture,thusproducingalower n/gratiowhensuch
6.1.2 TRIGA-type reactors (Training Research and Isotope
a shield is used. For this reason, borated polyethylene shields
production reactor manufactured by General Atomics) deliver
are preferred. While most facilities providing neutron irradia-
gamma dose during neutron irradiations that can vary consid-
tion for semiconductor parts will automatically provide the
erably depending on the immediately preceding operating
thermal neutron shields, it is the experimenter’s responsibility
history of the reactor. A TRIGA-type reactor that has been
to verify that such a shield is employed during the irradiation.
operating at a high power level for an extended period prior to
the semiconductor component neutron irradiation will contain
7. Procedure
a larger fission product inventory that will contribute signifi-
cantly higher gamma dose than a reactor that has had no recent
7.1 Reactor Facility Selection:
high level operations. The experimenter must determine the
7.1.1 Reactor Operating Modes and Fluence Levels—Two
maximum gamma dose his experiment can tolerate, and advise
types of reactors are generally used for evaluating the displace-
the facility operator to provide sufficient shielding to meet this
ment effects of neutrons on electronic components. These
limit.
reactors, the FBR and the TRIGA types, can be operated in
6.2 Temperature Effects—Annealing of neutron damage is
either a pulsed or a steady-state mode. The minimum pulse
enhanced at elevated temperatures. Elevated temperatures may
width for the FBR is approximately 50 µs and the TRIGAtype
occur during irradiation, transportation, storage, or electrical
has a nominal pulse width of 10 ms. No rate dependence of
characterization of the test devices.
permanent displacement damage has been observed at these
6.3 Dosimetry Errors— Neutron fluence is typically re-
facilities. In the single-pulse mode, the FBR typically has a
13 2
ported in terms of an equivalent 1 MeVmonoenergetic neutron
maximum fluence (F )upto8 3 10 n/cm outside
eq, 1 MeV, Si
14 2
fluence in the specified irradiated material (F or
eq, 1 MeV, Si
the core and 6 3 10 n/cm inside the core. TRIGA-type
F ) in units of neutrons per square centimeter.
eq, 1 MeV, GaAs reactors have a maximum single pulse fluence that varies with
ASTM guidelines and standards exist for calculating this value
the reactor and the exposure position within the core, but
13 15 2
from measured reactor characteristics. However, reactor facili-
ranges from 5 3 10 to 3 3 10 n/cm . The in-core volume
ties may not routinely remeasure the neutron spectrum, (using
availableforsemiconductorcomponentsformostFBRreactors
Guide E720 and Method E721) at the test sample exposure
and TRIGA type reactors is on the order of 100 cm . Signifi-
sites. A currently valid determination of the neutron spectrum
cantly larger core volumes are available at some facilities.
is needed to provide the essential data
...
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