ASTM F1190-11

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

SIGNIFICANCE AND USE
Semiconductor devices can be permanently damaged by reactor spectrum neutrons (1, 2) . The effect of such damage on the performance of an electronic component can be determined by measuring the component’s electrical characteristics before and after exposure to fast neutrons in the neutron fluence range of interest. The resulting data can be utilized in the design of electronic circuits that are tolerant of the degradation exhibited by that component.
This guide provides a method by which the exposure of silicon and gallium arsenide semiconductor devices to neutron irradiation may be performed in a manner that is repeatable and which will allow comparison to be made of data taken at different facilities.
For semiconductors other than silicon and gallium arsenide, applicable validated 1-MeV damage functions are not available in codified National standards. In the absence of a validated 1-MeV damage function, the non-ionizing energy loss (NIEL) or the displacement kerma, as a function incident neutron energy, normalized to the response in the 1 MeV energy region, may be used as an approximation. See Practice E722 for a description of the method used to determine the damage functions in Si and GaAs (3).
SCOPE
1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation from a nuclear reactor source to determine the permanent damage in the components. Validated 1-MeV displacement damage functions codified in National Standards are not currently available for other semiconductor materials.
1.2 Elements of this guide, with the deviations noted, may also be applicable to the exposure of semiconductors comprised of other materials except that validated 1-MeV displacement damage functions codified in National standards are not currently available.
1.3 Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined using appropriate electrical test methods.
1.4 This guide addresses those issues and concerns pertaining to irradiations with reactor spectrum neutrons.
1.5 System and subsystem exposures and test methods are not included in this guide.
1.6 This guide is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 109 to 1016 1-MeV n/cm2.
1.7 This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.
1.8 This guide provides an alternative to Test Method 1017.3, Neutron Displacement Testing, a component of MIL-STD-883 and MIL-STD-750. The Department of Defense has restricted use of these MIL-STDs to programs existing in 1995 and earlier.
1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 30-Sep-2011
• ICS: 31.020 - Electronic components in general
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaces: ASTM F1190-99(2005) - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
• Effective Date: 01-Oct-2011
• Referred By: ASTM E2450-23 - Standard Practice for Application of CaF<inf>2</inf>(Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments
• Effective Date: 01-Oct-2011
• Referred By: ASTM E1854-19 - Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
• Effective Date: 01-Oct-2011

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: F1190 − 11
Standard Guide for
1
Neutron Irradiation of Unbiased Electronic Components
This standard is issued under the fixed designation F1190; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope priate safety and health practices and determine the applica-
bility of regulatory limitations prior to use.
1.1 This guide strictly applies only to the exposure of
unbiased silicon (Si) or gallium arsenide (GaAs) semiconduc-
2. Referenced Documents
tor components (integrated circuits, transistors, and diodes) to
2
2.1 ASTM Standards:
neutron radiation from a nuclear reactor source to determine
E264Test Method for Measuring Fast-Neutron Reaction
the permanent damage in the components. Validated 1-MeV
Rates by Radioactivation of Nickel
displacement damage functions codified in National Standards
E265Test Method for Measuring Reaction Rates and Fast-
are not currently available for other semiconductor materials.
Neutron Fluences by Radioactivation of Sulfur-32
1.2 Elements of this guide, with the deviations noted, may
E668 Practice for Application of Thermoluminescence-
also be applicable to the exposure of semiconductors com-
Dosimetry (TLD) Systems for Determining Absorbed
prisedofothermaterialsexceptthatvalidated1-MeVdisplace-
DoseinRadiation-HardnessTestingofElectronicDevices
ment damage functions codified in National standards are not
E720Guide for Selection and Use of Neutron Sensors for
currently available.
Determining Neutron Spectra Employed in Radiation-
1.3 Only the conditions of exposure are addressed in this
Hardness Testing of Electronics
guide. The effects of radiation on the test sample should be
E721Guide for Determining Neutron Energy Spectra from
determined using appropriate electrical test methods.
Neutron Sensors for Radiation-Hardness Testing of Elec-
tronics
1.4 This guide addresses those issues and concerns pertain-
E722PracticeforCharacterizingNeutronFluenceSpectrain
ing to irradiations with reactor spectrum neutrons.
Terms of an Equivalent Monoenergetic Neutron Fluence
1.5 System and subsystem exposures and test methods are
for Radiation-Hardness Testing of Electronics
not included in this guide.
E1249Practice for Minimizing Dosimetry Errors in Radia-
1.6 This guide is applicable to irradiations conducted with
tionHardnessTestingofSiliconElectronicDevicesUsing
the reactor operating in either the pulsed or steady-state mode.
Co-60 Sources
The range of interest for neutron fluence in displacement
E1250Test Method forApplication of Ionization Chambers
9
damage semiconductor testing range from approximately 10
to Assess the Low Energy Gamma Component of
16 2
to 10 1-MeV n/cm .
Cobalt-60 Irradiators Used in Radiation-Hardness Testing
of Silicon Electronic Devices
1.7 This guide does not address neutron-induced single or
E1854Practice for Ensuring Test Consistency in Neutron-
multiple neutron event effects or transient annealing.
Induced Displacement Damage of Electronic Parts
1.8 This guide provides an alternative to Test Method
E1855Test Method for Use of 2N2222A Silicon Bipolar
1017.3, Neutron Displacement Testing, a component of MIL-
Transistors as Neutron Spectrum Sensors and Displace-
STD-883 and MIL-STD-750. The Department of Defense has
ment Damage Monitors
restricteduseoftheseMIL-STDstoprogramsexistingin1995
E2450Practice for Application of CaF (Mn) Thermolumi-
2
and earlier.
nescence Dosimeters in Mixed Neutron-Photon Environ-
1.9 This standard does not purport to address all of the
ments
safety concerns, if any, associated with its use. It is the
F980 Guide for Measurement of Rapid Annealing of
responsibility of the user of this standard to establish appro-
Neutron-Induced Displacement Damage in Silicon Semi-
conductor Devices
1
This guide is under the jurisdiction of ASTM Committee F01 on Electronics
and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space
2
Radiation Effects. For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Current edition approved Oct. 1, 2011. Published October 2011. Originally contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
approvedin1988.Lastpreviouseditionapprovedin2005asF1190–99(2005).DOI: Standards volume information, refer to the standard’s Document Summary page on
10.1520/F1190-11. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1

---------------------- Page: 1 ----------------------
F1190 − 11
F1892Guide for Ionizing Radiation (Total Dose) Effects 4. Summary of Guide
Testing of S
...

This document is not anASTM standard and is intended only to provide the user of anASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation:F1190–99(Reapproved2005) Designation: F1190 – 11
Standard Guide for
1
Neutron Irradiation of Unbiased Electronic Components
This standard is issued under the fixed designation F1190; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1 This guide strictly applies only to the exposure of unbiased silicon (SI)(Si) or gallium arsenide (GaAs) semiconductor
components (integrated circuits, transistors, and diodes) to neutron radiation from a nuclear reactor source to determine the
permanent damage in the components. Validated 1-MeV displacement damage functions codified in National Standards are not
currently available for other semiconductor materials.
1.2 Elements of this guide, with the deviations noted, may also be applicable to the exposure of semiconductors comprised of
other materials except that validated 1-MeV displacement damage functions codified in National standards are not currently
available.
1.3 Onlytheconditionsofexposureareaddressedinthisguide.Theeffectsofradiationonthetestsampleshouldbedetermined
using appropriate electrical test methods.
1.4 This guide addresses those issues and concerns pertaining to irradiations with reactor spectrum neutrons.
1.5 System and subsystem exposures and test methods are not included in this guide.
1.6 This guide is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The
9 16
range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 10 to 10
2
1-MeV n/cm
n/cm .
1.7 This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.
1.8 This guide provides an alternative to Test Method 1017.3, Neutron Displacement Testing, a component of MIL-STD-883
and MIL-STD-750. The Department of Defense has restricted use of these MIL-STDs to programs existing in 1995 and earlier.
1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory
limitations prior to use.
2. Referenced Documents
2.1 ASTM Standards:
2
E170Terminology Relating to Radiation Measurements and Dosimetry ASTM Standards:
E264 Test Method for Measuring Fast-Neutron Reaction Rates by Radioactivation of Nickel
E265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
E668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in
Radiation-Hardness Testing of Electronic Devices
E720 Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness
Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
E722 Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for
Radiation-Hardness Testing of Electronics
E1249 Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60
Sources
E1250 Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60
Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
E1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
1
This guide is under the jurisdiction ofASTM Committee F01 on Electronics and is the direct responsibility of Subcommittee F01.11 on Quality and HardnessAssurance.
Current edition approved Jan. 1, 2005. Published January 2005. Originally approved in 1988. Last previous edition approved in 1999 as F1190–99. DOI:
10.1520/F1190-99R05.on Nuclear and Space Radiation Effects.
Current edition approved Oct. 1, 2011. Published October 2011. Originally approved in 1988. Last previous edition approved in 2005 as F1190–99(2005). DOI:
10.1520/F1190-11.
2
For referencedASTM standards, visit theASTM website, www.astm.org, or contactASTM Customer Service at [e-mail]. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © AST
...