ASTM F1190-99

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

SCOPE
1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of exposure are addressed in this practice. The effects of radiation on the test sample should be determined using appropriate electrical test methods.
1.2 System and subsystem exposures and test methods are not included in this practice.
1.3 This practice is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The practical limits for neutron fluence ([phi]eq,1MeV,Si or [phi]eq,1MeV,GaAs) in semiconductor testing range from approximately 10  to 10 16  n/cm .
1.4 This practice addresses those issues and concerns pertaining to irradiations with neutrons of energies greater than 10 keV.
1.5 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 09-Jan-1999
• ICS: 31.020 - Electronic components in general
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaced By: ASTM F1190-99(2005) - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
• Effective Date: 01-Jan-2005

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation:F 1190–99
Standard Guide for
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Neutron Irradiation of Unbiased Electronic Components
This standard is issued under the fixed designation F 1190; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (ε) indicates an editorial change since the last revision or reapproval.
1. Scope 2. Referenced Documents
1.1 This guide strictly applies only to the exposure of 2.1 ASTM Standards:
unbiased silicon (SI) or gallium arsenide (GaAs) semiconduc- E 170 Terminology Relating to Radiation Measurements
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tor components (integrated circuits, transistors, and diodes) to and Dosimetry
neutron radiation from a nuclear reactor source to determine E 264 Test Method for Determining Fast-Neutron Reac-
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the permanent damage in the components. Validated 1-MeV tion Rates by Radioactivation of Nickel
damage functions codified in National Standards are not E 265 Test Method for Measuring Reaction Rates and
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currently available for other semiconductor materials. Fast-Neutron Fluences by Radioactivation of Sulfur–32
1.2 Elements of this guide with the deviations noted may E 668 Practice for Application of Thermoluminescence
also be applicable to the exposure of semiconductors com- Dosimetry(TLD)SystemsforDeterminingAbsorbedDose
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prised of other materials except that validated 1-MeV damage in Radiation-Hardness Testing of Electronic Devices
functions codified in National standards are not currently E 720 Guide for Selection and Use of Neutron-Activation
available. Foils for Determining Neutron Spectra Employed in
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1.3 Only the conditions of exposure are addressed in this Radiation-Hardness Testing of Electronics
guide. The effects of radiation on the test sample should be E 721 Method for Determining Neutron Energy Spectra
determined using appropriate electrical test methods. with Neutron-Activation Foils for Radiation-Hardness
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1.4 This guide addresses those issues and concerns pertain- Testing of Electronics
ing to irradiations with reactor spectrum neutrons. E 722 Practice for Characterizing Neutron Energy Fluence
1.5 System and subsystem exposures and test methods are Spectra in Terms of an Equivalent Monoenergetic Neutron
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not included in this guide. Fluence for Radiation-Hardness Testing of Electronics
1.6 This guide is applicable to irradiations conducted with E 1249 Practice for Minimizing Dosimetry Errors in Radia-
the reactor operating in either the pulsed or steady-state mode. tion Hardness Testing of Silicon Electronic Devices Using
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The range of interest for neutron fluence in displacement Co-60 Sources
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damage semiconductor testing range from approximately 10 E 1250 Test Method for Application of Ionization Cham-
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to 10 n/cm . bers to Assess the Low Energy Gamma Component of
1.7 This guide does not address neutron-induced single or Cobalt-60 Irradiators Used in Radiation-Hardness Testing
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multiple neutron event effects or transient annealing. of Silicon Electronic Devices
1.8 This guide provides an alternative to Test Method E 1854 Practice for Ensuring Test Consistency in Neutron-
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1017.3, Neutron Displacement Testing, a component of MIL- Induced Displacement Damage of Electronic Parts
STD-883 and MIL-STD-750. The Department of Defense has F 980 Guide for the Measurement of Rapid Annealing of
restricted use of these MIL-STDs to programs existing in 1995 Neutron-Induced Displacement Damage in Semiconductor
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and earlier. Devices.
1.9 This standard does not purport to address all of the F 1892 Guide for Ionizing Radiation (Total Dose) Effects
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safety concerns, if any, associated with its use. It is the Testing of Semiconductor Devices
responsibility of the user of this standard to establish appro- 2.2 Other Documents:
priate safety and health practices and determine the applica- 2.2.1 The Department of Defense publishes every few
bility of regulatory limitations prior to use. years a compendium of nuclear reactor facilities that may be
suitable for neutron irradiation of electronic components:
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This practice is under the jurisdiction ofASTM Committee F-1 on Electronics
and is the direct responsibility of Subcommittee F01.11 on Quality and Hardness
Assurance.
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Current edition approved Jan. 10, 1999. Published March 1999. Originally Annual Book of ASTM Standards, Vol 12.02.
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published as F 1190 – 88. Last previous edition F 1190 – 93. Annual Book of ASTM Standards, Vol 10.04.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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F 1190
DASIAC SR-94-009, April 1996, Guide to Nuclear Weap- Practice E 1854 contains detailed guidance to assist the us
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