ASTM F1893-11

Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices

SIGNIFICANCE AND USE
The use of FXR or LINAC radiation sources for the determination of high dose-rate burnout in semiconductor devices is addressed in this guide. The goal of this guide is to provide a systematic approach to testing semiconductor devices for burnout or survivability.
The different types of failure modes that are possible are defined and discussed in this guide. Specifically, failure can be defined by a change in device parameters, or by a catastrophic failure of the device.
This guide can be used to determine if a device survives (that is, continues to operate and function within the specified performance parameters) when irradiated to a predetermined dose-rate level; or, the guide can be used to determine the dose-rate burnout failure level (that is, the minimum dose rate at which burnout failure occurs). However, since this latter test is destructive, the minimum dose-rate burnout failure level must be determined statistically.
SCOPE
1.1 This guide defines the detailed requirements for testing semiconductor devices for short-pulse high dose-rate ionization-induced survivability and burnout failure. The test facility shall be capable of providing the necessary dose rates to perform the measurements. Typically, large flash X-ray (FXR) machines operated in the photon mode, or FXR e-beam facilities are utilized because of their high dose-rate capabilities. Electron Linear Accelerators (LINACs) may be used if the dose rate is sufficient. Two modes of test are described: (1) A survivability test, and (2) A burnout failure level test.
1.2 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.

General Information

• Status: Historical
• Publication Date: 31-Dec-2010
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaces: ASTM F1893-98(2003) - Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
• Effective Date: 01-Jan-2011
• Replaced By: ASTM F1893-18 - Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices (Withdrawn 2023)
• Effective Date: 01-Mar-2018

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: F1893 − 11
Guide for
Measurement of Ionizing Dose-Rate Survivability and
1
Burnout of Semiconductor Devices
This standard is issued under the fixed designation F1893; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 3.1.1 burnout failure level test—a test performed to deter-
mine the maximum dose-rate level the device survives and the
1.1 This guide defines the detailed requirements for testing
minmumdose-ratelevelwherethedeviceexperiencesburnout.
semiconductor devices for short-pulse high dose-rate
3.1.1.1 Discussion—In such a test, semiconductor devices
ionization-induced survivability and burnout failure. The test
are exposed to a series of irradiations of increasing dose-rate
facility shall be capable of providing the necessary dose rates
levels.The maximum dose rate at which the device survives is
to perform the measurements. Typically, large flash X-ray
determined for worst-case bias conditions. The burnout failure
(FXR) machines operated in the photon mode, or FXR e-beam
level test is always a destructive test.
facilities are utilized because of their high dose-rate capabili-
ties.ElectronLinearAccelerators(LINACs)maybeusedifthe
3.1.2 dose rate—the amount of energy absorbed per unit
dose rate is sufficient. Two modes of test are described: (1)A
mass of a material per unit time during exposure to the
survivability test, and ( 2) A burnout failure level test.
radiation field (typically, expressed in units of Gy(material)/s).
For pulsed radiation sources, dose rate typically refers to the
1.2 The values stated in International System of Units (SI)
peak dose rate during the pulse.
are to be regarded as standard. No other units of measurement
are included in this standard.
3.1.3 dose rate induced latchup—regenerativedeviceaction
in which a parasitic region (for example, a four (4) layer
2. Referenced Documents
p-n-p-n or n-p-n-p path) is turned on by the photocurrent
2
2.1 ASTM Standards:
generated by a pulse of ionizing radiation, and remains on for
E170Terminology Relating to Radiation Measurements and
an indefinite period of time after the photocurrent subsides.
Dosimetry
The device will remain latched as long as the power supply
E668 Practice for Application of Thermoluminescence-
delivers voltage greater than the holding voltage and current
Dosimetry (TLD) Systems for Determining Absorbed
greater than the holding current. Latchup disrupts normal
DoseinRadiation-HardnessTestingofElectronicDevices
circuit operation in some portion of the circuit, and may also
E1894Guide for Selecting Dosimetry Systems forApplica-
cause catastrophic failure due to local heating of semiconduc-
tion in Pulsed X-Ray Sources
tor regions, metallization or bond wires.
F526Test Method for Using Calorimeters for Total Dose
3.1.4 failure condition—a device is considered to have
Measurements in Pulsed Linear Accelerator or Flash
undergone burnout failure if the device experiences one of the
X-ray Machines
2 following conditions.
2.2 ISO/ASTM Standard:
(1) functional failure—a device failure where the device under
51275Practice for Use of a Radiochromic Film Dosimetry
test, (DUT) fails functional tests following exposure.
System
(2) parametric failure—a device failure where the device
3. Terminology under test, (DUT) fails parametric measurements after expo-
sure.
3.1 Definitions:
3.1.4.1 Discussion—Functional or parametric failures may
becausedbytotalionizingdosemechanisms.Seeinterferences
1
ThisguideisunderthejurisdictionofCommitteeF01onElectronics,andisthe
for additional discussion.
direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation
Effects.
3.1.5 high dose-rate burnout—permanentdamagetoasemi-
Current edition approved Jan. 1, 2011. Published January 2011. Originally
conductor device caused by abnormally large currents flowing
approvedin1998.Lastpreviouseditionapprovedin2003asF1893-98(2003).DOI:
10.1520/F1893-11. in junctions and resulting in a discontinuity in the normal
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
current flow in the device.
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
3.1.5.1 Discussion—This effect strongly depends on the
Standards volume information, refer to the standard’s Document Summary page on
the ASTM website. mode of operation and bias conditions. Temperature may also
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1

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F1893 − 11
be a factor in damage to the device should latch
...

This document is not anASTM standard and is intended only to provide the user of anASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation:F1893–98 (Reapproved2003) Designation: F1893 – 11
Guide for
Measurement of Ionizing Dose-Rate Survivability and
1
Burnout of Semiconductor Devices
This standard is issued under the fixed designation F1893; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1Thisguidedefinesthedetailedrequirementsfortestingmicrocircuitsforshortpulsehighdose-rateionization-inducedfailure.
Largeflashx-ray(FXR)machinesoperatedinthephotonmode,orFXRe-beamfacilitiesarerequiredbecauseofthehighdose-rate
levels that are necessary to cause burnout. Two modes of test are possible: (
1.1 This guide defines the detailed requirements for testing semiconductor devices for short-pulse high dose-rate ionization-
induced survivability and burnout failure. The test facility shall be capable of providing the necessary dose rates to perform the
measurements. Typically, large flash X-ray (FXR) machines operated in the photon mode, or FXR e-beam facilities are utilized
because of their high dose-rate capabilities. Electron LinearAccelerators (LINACs) may be used if the dose rate is sufficient. Two
modes of test are described: (1) A survivability test, and ( 2) A burnout failure level test.
1.2 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are
included in this standard.
2. Referenced Documents
2
2.1 ASTM Standards:
E666Practice for Calculating Absorbed Dose From Gamma or X Radiation
E170 Terminology Relating to Radiation Measurements and Dosimetry
E668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in
Radiation-HardnessTestingofElectronicDevicesPracticeforApplicationofThermoluminescence-Dosimetry(TLD)Systems
for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
E1894 Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
F526 Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests
2
2.2 ISO/ASTM Standard:
51275 Practice for Use of a Radiochromic Film Dosimetry System
3. Terminology
3.1 Definitions:
3.1.1 dose rate—energy absorbed per unit time per unit mass by a given material that is exposed to the radiation field (Gy/s,
rd/s).
3.1.2high dose-rate burnout—permanent damage to a semiconductor device caused by abnormally large currents flowing in
junctions and resulting in a discontinuity in the normal current flow in the device.
3.1.2.1burnout failure level test—a test performed to determine the maximum dose-rate level the device survives and the
minmum dose-rate level where the device experiences burnout.
3.1.1.1 Discussion—This effect strongly depends on the mode of operation and bias conditions. Temperature may also be a
factor in damage to the device should latchup occur prior to failure. Latchup is known to be temperature dependent. —In such a
test, semiconductor devices are exposed to a series of irradiations of increasing dose-rate levels. The maximum dose rate at which
the device survives is determined for worst-case bias conditions. The burnout failure level test is always a destructive test.
3.1.2 dose rate—the amount of energy absorbed per unit mass of a material per unit time during exposure to the radiation field
(typically,expressedinunitsofGy(material)/s).Forpulsedradiationsources,doseratetypicallyreferstothepeakdoserateduring
the pulse.
1
This guide is under the jurisdiction of Committee F01on Electronics , and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation Effects.
Current edition approved Dec. 1, 2003. Published July 1998. DOI: 10.1520/F1893-98R03.
Current edition approved Jan. 1, 2011. Published January 2011. Originally approved in 1998. Last previous edition approved in 2003 as F1893-98(2003). DOI:
10.1520/F1893-11.
2
For referencedASTM standards, visit theASTM website, www.astm.org, or contactASTM Customer Service at [e-mail]. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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F1893 – 11
3.1.3 dose rate induced latchup—regenerative device acti
...