ASTM E1855-10
(Test Method)Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
SIGNIFICANCE AND USE
The neutron spectrum in a test (simulation) environment must be known in order to use a measured device response in the test environment to predict the device performance in an operational environment (see Practice E1854). Typically, neutron spectra are determined by use of a set of sensors that have response functions that are sensitive over the neutron energy region to which the device under test (DUT) responds (see Guide E721). In particular, for silicon bipolar devices exposed in reactor neutron spectra, this effective energy range is between 0.01 and 10 MeV. A typical set of activation reactions that lack fission reactions from nuclides such as 235U, 237Np, or 239Pu, will have very poor sensitivity to the spectrum between 0.01 and 2 MeV. For a pool-type reactor spectrum, 70 % of the DUT electronic damage response may lie in this range. Often, fission foils are not included in the sensor set for spectrum determinations because their use must be licensed, and they require special handling for health physics considerations. The silicon transistors provide the needed response to define the spectrum in this critical range.
If fission foils are a part of the sensor set, the silicon sensor provides confirmation of the spectrum shape.
Bipolar transistors, such as type 2N2222A, are inexpensive, are smaller than fission foils contained in a boron ball, and are sensitive to a part of the neutron spectrum important to the damage of modern silicon electronics. They also can be used directly in arrays to map 1-MeV(Si) equivalent fluence. The proper set of steps to take in reading the transistor-gain degradation is the primary subject of this test method.
SCOPE
1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV(Si) equivalent displacement damage fluence monitors.
1.2 The neutron displacement damage is especially valuable as a neutron spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 × 10 12 n/cm2 and 1 × 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.
1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.
1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.
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Designation: E1855 − 10
StandardTest Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
1
Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
2
1. Scope 2.2 ASTM Standards:
E170Terminology Relating to Radiation Measurements and
1.1 This test method covers the use of 2N2222A silicon
Dosimetry
bipolar transistors as dosimetry sensors in the determination of
E261Practice for Determining Neutron Fluence, Fluence
neutron energy spectra, and as silicon 1-MeV(Si) equivalent
Rate, and Spectra by Radioactivation Techniques
displacement damage fluence monitors.
E265Test Method for Measuring Reaction Rates and Fast-
1.2 Theneutrondisplacementdamageisespeciallyvaluable
Neutron Fluences by Radioactivation of Sulfur-32
asaneutronspectrumsensorintherange0.1to2.0MeVwhen
E720Guide for Selection and Use of Neutron Sensors for
fissionfoilsarenotavailable.Ithasbeenappliedinthefluence
Determining Neutron Spectra Employed in Radiation-
12 2 14 2
range between2×10 n/cm and1×10 n/cm and should
Hardness Testing of Electronics
15 2
be useful up to 10 n/cm . This test method details the steps
E721Guide for Determining Neutron Energy Spectra from
fortheacquisitionanduseofsilicon1-MeVequivalentfluence
Neutron Sensors for Radiation-Hardness Testing of Elec-
information (in a manner similar to the use of activation foil
tronics
data) for the determination of neutron spectra.
E722PracticeforCharacterizingNeutronFluenceSpectrain
1.3 In addition, this sensor can provide important confirma- Terms of an Equivalent Monoenergetic Neutron Fluence
for Radiation-Hardness Testing of Electronics
tion of neutron spectra determined with other sensors, and
yields a direct measurement of the silicon 1-MeV fluence by E844Guide for Sensor Set Design and Irradiation for
Reactor Surveillance, E 706 (IIC)
the transfer technique.
E944Guide for Application of Neutron Spectrum Adjust-
1.4 The values stated in SI units are to be regarded as
ment Methods in Reactor Surveillance, E 706 (IIA)
standard. No other units of measurement are included in this
E1854Practice for Ensuring Test Consistency in Neutron-
standard.
Induced Displacement Damage of Electronic Parts
1.5 This standard does not purport to address all of the
E2005Guide for Benchmark Testing of Reactor Dosimetry
safety concerns, if any, associated with its use. It is the
in Standard and Reference Neutron Fields
responsibility of the user of this standard to establish appro-
E2450Practice for Application of CaF (Mn) Thermolumi-
2
priate safety and health practices and determine the applica-
nescence Dosimeters in Mixed Neutron-Photon Environ-
bility of regulatory requirements prior to use.
ments
2. Referenced Documents
3. Terminology
2.1 The ASTM standards E170, E261, and E265 provide a
3.1 Symbols:
background for understanding how sensors are used in radia-
Φ =thesilicon1-MeVequivalentfluence(seePracticeE722).
1
tion measurements and general dosimetry. The rest of the
h = i /i where i is the collector current and i is the base
FE c b c b
standards referenced in the list discuss the choice of sensors,
current, in a common emitter circuit.
spectrumdeterminationswithsensordata,andthepredictionof
4. Summary of Test Method
neutron displacement damage in some semiconductor devices,
particularly silicon.
4.1 Gaindegradationof2N2222Asiliconbipolartransistors
measured in a test (simulation) environment is compared with
that measured in a reference neutron environment. The Φ in
1r
1
ThistestmethodisunderthejurisdictionofASTMCommitteeE10onNuclear
Technology and Applicationsand is the direct responsibility of Subcommittee
2
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices. For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Current edition approved Oct. 1, 2010. Published October 2010. Originally contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
ε1
approved in 1996. Last previous edition approved in 2005 as E1855–05 . DOI: Standards volume information, refer to the standard’s Document Summary page on
10.1520/E1855-10. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1
---------------------- Page: 1 ----------------------
E1855 − 10
thereferenceenvironmentisderivedfromtheknownreference 5.3 Bipolar transistors, such as type 2N2222A, are
spectrum and is used to determine a measured Φ in the test inexpensive, are smaller than fission foils contai
...
This document is not anASTM standard and is intended only to provide the user of anASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
´1
Designation:E1855–05 Designation:E1855–10
Standard Test Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
1
Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1
´ NOTE—Editorial changes were made throughout in September 2005.
1. Scope
1.1 Thistestmethodcoverstheuseof2N2222Asiliconbipolartransistorsasdosimetrysensorsinthedeterminationofneutron
energy spectra, and as silicon 1-MeV(Si) equivalent displacement damage fluence monitors.
1.2 The neutron displacement damage is especially valuable as a neutron spectrum sensor in the range 0.1 to 2.0 MeV when
12 2 14 2
fission foils are not available. It has been applied in the fluence range between 2 3 10 n/cm and 1 3 10 n/cm and should
15 2
be useful up to 10 n/cm . This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence
information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.
1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a
direct measurement of the silicon 1-MeV fluence by the transfer technique.
1.4
1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory
requirements prior to use.
2. Referenced Documents
2.1 The ASTM standards E170, E261, and E265 provide a background for understanding how sensors are used in radiation
measurements and general dosimetry. The rest of the standards referenced in the list discuss the choice of sensors, spectrum
determinations with sensor data, and the prediction of neutron displacement damage in some semiconductor devices, particularly
silicon.
2
2.2 ASTM Standards:
E170 Terminology Relating to Radiation Measurements and Dosimetry
E261 Practice for Determining Neutron Fluence, Fluence Rate, and Spectra by Radioactivation Techniques
E265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
E720 Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness
Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
E722 Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for
Radiation-Hardness Testing of Electronics
E844 Guide for Sensor Set Design and Irradiation for Reactor Surveillance, E 706(IIC)
E944 Guide for Application of Neutron Spectrum Adjustment Methods in Reactor Surveillance, E 706 (IIA)
E1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
E2005 Guide for Benchmark Testing of Reactor Dosimetry in Standard and Reference Neutron Fields Guide for Benchmark
Testing of Reactor Dosimetry in Standard and Reference Neutron Fields
E2450 Practice for Application of CaF (Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments
2
1
This test method is under the jurisdiction of ASTM Committee E10 on Nuclear Technology and Applications and is the direct responsibility of Subcommittee E10.07
on Radiation Dosimetry for Radiation Effects on Materials and Devices.
Current edition approved JulyOct. 1, 2005.2010. Published August 2005.October 2010. Originally approved in 1996. Last previous edition approved in 20042005 as
´1
E1855–045 . DOI: 10.1520/E1855-05E01. DOI: 10.1520/E1855-10.
2
ForreferencedASTMstandards,visittheASTMwebsite,www.astm.org,orcontactASTMCustomerServiceatservice@astm.org.ForAnnualBookofASTMStandards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1
---------------------- Page: 1 ----------------------
E1855–10
3. Terminology
3.1 Symbols:
F =the silicon 1-MeV equivalent fluence (see P
...
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