FprEN IEC 63567-1:2026

• Status: Not Published
• Publication Date: 07-Feb-2027
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Current Stage: 5020 - Vote circulated - Formal Approval
• Start Date: 25-Sep-2026
• Completion Date: 25-Sep-2026
• Ref Project: kSIST FprEN IEC 63567-1:2026 - Semiconductor devices - Performance evaluation of semiconductor processing components and inspection equipment - Part 1: Transmittance evaluation method of EUV pellicle

FprEN IEC 63567-1:2026 specifies a method for measuring the transmittance of extreme ultraviolet (EUV) pellicles used in extreme ultraviolet lithography (EUVL). It defines the measurement setup, specimen handling, calculation approach and test report content for single-pass and double-pass transmittance so laboratories, suppliers and buyers can compare results on the same basis.

What does FprEN IEC 63567-1:2026 specify?

FprEN IEC 63567-1:2026 covers EUV pellicles used on the front side of a reflective mask or reflective reticle to protect the mask from contaminant particles during EUV exposure. The document is organized into Clauses 1 to 8, with one informative annex.

Part of the document	What it covers
Clause 1	Scope for EUV pellicle transmittance measurement
Clause 2	Normative references
Clause 3	Terms, definitions, symbols and abbreviated terms
Clause 4	Apparatus and measurement conditions
Clause 5	Specimen preparation
Clause 6	Transmittance evaluation process
Clause 7	Transmittance calculation
Clause 8	Test report
Annex A	Informative explanations and examples

Clause 4 through Clause 7 are the practical core. They tell the reader how to set up the instrument, prepare the specimen, run the measurement and calculate the result in a way that matches EUVL use.

What are the key requirements of FprEN IEC 63567-1:2026?

Measurement apparatus

Clause 4 says the transmittance evaluation apparatus is built for both single-pass and double-pass measurement. FprEN IEC 63567-1:2026 requires EUV light in the same spectrum region as the EUV exposure tool, a high-vacuum environment, a pellicle positioning stage, a pellicle holder, EUV optics, a beam splitter (BS) and two detectors.

In practice, this means the test set-up must reproduce exposure-like conditions rather than using a general optical bench. The pellicle holder keeps the sample fixed, and the positioning stage supports transmittance mapping, defect location and cleaning-related checks.

Source condition, accuracy and noise control

Clause 4.3 requires a light source in the same EUV spectrum region as the exposure tool. Clause 4.4 sets the measurement accuracy target as a mean deviation of less than 0.1% across multiple measurements, as agreed by customer and supplier. Clause 4.5 says noise such as dark current shall be suppressed, for example by cooling the detector.

For the reader, this means the measurement result depends on stable source power, low detector noise and a suitable signal-to-noise ratio. The BS and two-detector arrangement are used to reduce the effect of source fluctuations on the result.

Specimen preparation

Clause 5.1 requires the pellicle membrane and frame to be visually clean and properly formed, with no membrane or frame extending beyond the frame wall and no visually detectable stringers, burrs, anodization irregularities or particles. Clause 5.2 sets storage at 21 ± 2 °C and 40 ± 15% relative humidity. Clause 5.3 requires at least 4 h of preconditioning in the measurement environment.

In practice, the specimen must be stabilized before test so that temperature and humidity do not distort the transmittance reading.

Measurement process and calculation

Clause 6 separates the method into double-pass and single-pass transmittance. The process first measures EUV power without the pellicle, then with the pellicle in place, and repeats the steps as agreed by customer and supplier.

Clause 7 defines transmittance as the ratio of power after passing through the pellicle to incident power. For double-pass transmittance, the calculation uses detector 1 and detector 2 data with BS correction for source fluctuation. For single-pass transmittance, the calculation uses the corresponding single-pass detector readings. The practical result is a transmittance value tied to the actual EUV exposure geometry.

Test report

Clause 8 requires the report to include the testing laboratory, the commissioning party, the test date and the specimen description. If the sample is damaged during measurement, the report shall also include a photograph of the damage and the cause.

What terms does FprEN IEC 63567-1:2026 define?

• Extreme ultraviolet lithography (EUVL) is pattern creation on semiconductor wafers using short-wavelength EUV light, such as 13.5 nm.
• Multilayer mirror (ML) is a mirror coated with alternating layers of two materials to reflect X-ray and EUV light efficiently.
• Chief ray of angle (CRA) is the angle of the central ray within a light cone.
• Pellicle is a protective film or membrane used to prevent contamination during the lithography process.
• Extreme ultraviolet mask is a reflective photomask with a multilayer and patterned absorber used in EUVL.
• Full-size pellicle is a pellicle covering the full photomask area.
• Coupon-size pellicle is a smaller pellicle used for testing membrane properties.
• Single-pass transmittance is the ratio of photons passing through the material once to incident photons.
• Double-pass transmittance is the ratio of photons passing through the material twice to incident photons.

Who uses FprEN IEC 63567-1:2026?

FprEN IEC 63567-1:2026 is used by laboratories, pellicle suppliers, EUV lithography tool developers, semiconductor manufacturers and inspection equipment teams. They use it to measure pellicle transmittance, check uniformity, locate contamination defects, compare measurement methods and prepare test reports for customer-supplier review.

Quality and purchasing teams can also use it when they need a common method for requesting data or comparing pellicle lots. The value in practice is consistent communication about what was measured, under what EUV conditions and with what calculation method.

What does the FprEN IEC 63567-1:2026 document contain?

The document contains apparatus schematics, measurement-process diagrams and the calculation approach for both double-pass and single-pass transmittance. Figure 1 shows example apparatus layouts, and Figure 2 shows the measurement sequence.

Table 1 lists the symbols and abbreviated terms used in the method. Annex A gives explanatory material, including example pellicle images, scanning-method results and point-to-point results, which help readers understand how the method is applied to real samples.

The bibliography points to other IEC publications on optical transmittance measurement, which can be useful for readers comparing methods across different materials and applications.

SLOVENSKI STANDARD
oSIST prEN IEC 63567-1:2026
01-februar-2026
Polprevodniški elementi - Vrednotenje učinkovitosti komponent za obdelavo
polprevodnikov in opreme za pregledovanje - 1. del: Metoda ocenjevanja
prepustnosti pelikule EUV
Semiconductor devices - Performance evaluation of semiconductor processing
components and inspection equipment - Part 1: Transmittance evaluation method of
EUV pellicle
Ta slovenski standard je istoveten z: prEN IEC 63567-1:2025
ICS:
31.080.99 Drugi polprevodniški elementi Other semiconductor devices
oSIST prEN IEC 63567-1:2026 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

oSIST prEN IEC 63567-1:2026
oSIST prEN IEC 63567-1:2026
47/2976/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 63567-1 ED1
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2025-12-19 2026-03-13
SUPERSEDES DOCUMENTS:
47/2860/CD, 47/2935/CC
IEC TC 47 : SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Cheolung Cha
OF INTEREST TO THE FOLLOWING COMMITTEES: HORIZONTAL FUNCTION(S):

ASPECTS CONCERNED:
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the final stage for submitting ISC clauses. (SEE AC/22/2007 OR NEW GUIDANCE DOC).

TITLE:
Semiconductor devices - Performance evaluation of semiconductor processing components
and inspection equipment - Part 1: Transmittance evaluation method of EUV pellicle

PROPOSED STABILITY DATE: 2029
NOTE FROM TC/SC OFFICERS:
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oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
1 CONTENTS
3 FOREWORD . 2
4 1 Scope . 4
5 2 Normative references . 4
6 3 Terms, definitions, symbols, and abbreviated terms . 4
7 3.1 Terms and definitions. 4
8 3.2 Symbols and abbreviated terms . 5
9 4 Apparatus . 5
10 4.1 General . 5
11 4.2 Requirements and components for transmittance evaluation apparatus of
12 pellicle . 6
13 4.3 EUV light source condition . 7
14 4.4 Accuracy of EUV pellicle transmittance measurement . 7
15 4.5 Controlling noise induced by instruments . 7
16 5 Specimen preparation . 7
17 5.1 Specimen requirements . 7
18 5.2 Storage conditions . 7
19 5.3 Preconditioning for measurements . 7
20 6 Transmittance evaluation process of EUV pellicle . 8
21 6.1 General . 8
22 6.2 Measurement process . 8
23 7 Determining the transmittance via calculation . 8
24 7.1 General . 8
25 7.2 Determining double-pass transmittance of pellicle . 9
26 7.3 Determining Single-pass transmittance for pellicle . 9
27 8 Test report . 10
28 Annex A (informative) Transmittance of extreme ultraviolet pellicle . 11
29 A.1 General . 11
30 A.2 Examples of pellicle images and test results . 11
31 Bibliography . 13
33 Figure 1 –Examples of the transmittance evaluation apparatuses for the EUV pellicle,
34 illustrating the optical system for evaluating a) double-pass transmittance and b)
35 single-pass transmittance of the pellicle . 6
36 Figure 2 – Schematics of the measurement process of a1) and a2) double-pass
37 transmittance of the pellicle and b1) and b2) single-pass transmittance of the pellicle. . 8
38 Figure A.1 – a) Photograph of EUV pellicle and b) schematic cross-sectional image of
39 EUV pellicle . 11
40 Figure A.2 – Examples of the sample image and test results of the scanning method . 12
41 Figure A.3 – Examples of the point-to-point method test results: a) depicts the
42 measured positions on the pellicle image of a coupon size, b) shows the EUV
43 transmittance in relation to the measured positions from a) . 12
45 Table 1 – Letter symbols and abbreviated terms . 5
oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
47 INTERNATIONAL ELECTROTECHNICAL COMMISSION
48 ____________
50 SEMICONDUCTOR DEVICES -
51 PERFORMANCE EVALUATION OF SEMICONDUCTOR PROCESSING
52 COMPONENTS AND INSPECTION EQUIPMENT
54 Part 1: Transmittance evaluation method of EUV pellicle
56 FOREWORD
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93 IEC 63567-1 has been prepared by IEC technical committee 47: Semiconductor devices. It is
94 an International Standard.
95 The text of this International Standard is based on the following documents:
Draft Report on voting
XX/XX/FDIS XX/XX/RVD
oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
97 Full information on the voting for its approval can be found in the report on voting indicated in
98 the above table.
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109 • reconfirmed,
110 • withdrawn,
111 • replaced by a revised edition, or
112 • amended.
oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
114 SEMICONDUCTOR DEVICES -
115 PERFORMANCE EVALUATION OF SEMICONDUCTOR PROCESSING
116 COMPONENTS AND INSPECTION EQUIPMENT
118 Part 1: Transmittance evaluation method of EUV pellicle
121 1 Scope
122 This part of IEC 63567-1 proposes a method of measuring the transmittance of extreme
123 ultraviolet (EUV) pellicle used for extreme ultraviolet lithography (EUVL) and provides
124 guidelines on the conditions of the transmittance measurement instrument using EUV with a
125 short wavelength and methods for calculating EUV transmittance.
126 The scope of this document applies to all types of membranes attached to the front side of a
127 reflective mask (or reflective reticle) used in EUVL to physically protect the reflective mask from
128 contaminant particles generated inside the chamber during EUV exposure.
129 2 Normative references
130 There are no normative references in this document.
131 3 Terms, definitions, symbols, and abbreviated terms
132 For the purposes of this document, the following terms and definitions apply.
133 ISO and IEC maintain terminology databases for use in standardization at the following
134 addresses:
135 • IEC Electropedia: available at https://www.electropedia.org/
136 • ISO Online browsing platform: available at https://www.iso.org/obp
137 3.1 Terms and definitions
138 3.1.1
139 extreme ultraviolet lithography
140 EUVL
141 pattern creation on semiconductor wafers using short-wavelength EUV light (e.g., 13.5 nm
142 wavelength), a technique enabling efficient production of smaller electronic devices in
143 semiconductor manufacturing
144 3.1.2
145 multilayer mirror
146 ML
147 mirror coated with alternating layers of two different materials enabling efficient reflection of X -
148 ray and EUV light
149 3.1.3
150 chief ray of angle
151 CRA
152 angle of central ray within a light cone
oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
153 3.1.4
154 pellicle
155 protective film or membrane for preventing contamination during the lithography process
156 3.1.5
157 extreme ultraviolet mask
158 reflective photomask engraved with circuit patterns utilized in EUVL, consisting of a multilayer
159 and patterned absorber
160 Note 1 to entry: The alternative terms “EUV reticle” and “EUV photomask” are also often used in technical documents.
161 3.1.6
162 full-size pellicle
163 pellicle covering the entire surface area of a photomask, for instance, a full-size pellicle in EUVL
164 measures 110×144 𝑚𝑚
165 3.1.7
166 coupon-size pellicle
167 pellicle smaller than full-size pellicle, fabricated for testing optical, thermal, chemical, and
168 mechanical properties of the membrane materials
169 Note 1 to entry: The alternative term “pellicle coupon” is also often used in documents.
170 3.1.8
171 single-pass transmittance
172 ratio of photons passing thr
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