kSIST FprEN IEC 63567-1:2026

• Status: Not Published
• Public Enquiry End Date: 28-Feb-2026
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 5020 - Formal vote (FV) (Adopted Project)
• Start Date: 30-Sep-2026
• Due Date: 18-Nov-2026
• Completion Date: 02-Oct-2026
• Ref Project: FprEN IEC 63567-1:2026 - Semiconductor devices - Performance evaluation of semiconductor processing components and inspection equipment - Part 1: Transmittance evaluation method of EUV pellicle

kSIST FprEN IEC 63567-1:2026 is the SIST publication of IEC 63567-1 for evaluating the transmittance of EUV pellicles used in extreme ultraviolet lithography (EUVL). It specifies the measurement setup, specimen preparation, calculation method, and test report content for both single-pass and double-pass transmittance so laboratories, pellicle developers, and mask suppliers can compare results on the same basis.

What does kSIST FprEN IEC 63567-1:2026 specify?

kSIST FprEN IEC 63567-1:2026 specifies a method for measuring the transmittance of an extreme ultraviolet (EUV) pellicle and the conditions for doing that measurement with EUV light. The document is focused on membranes attached to the front side of a reflective mask or reflective reticle in EUVL, where the pellicle protects the mask from contaminant particles.

The document is organized into clauses on terms, apparatus, specimen preparation, measurement process, calculation, and test report, plus one informative annex with examples.

Clause or annex	What it covers
Clause 3	Terms, definitions, symbols, and abbreviated terms
Clause 4	Apparatus for transmittance evaluation
Clause 5	Specimen preparation
Clause 6	Transmittance evaluation process
Clause 7	Calculation of transmittance
Clause 8	Test report content
Annex A	Explanations and example images and results

What are the key requirements of kSIST FprEN IEC 63567-1:2026?

Clause 4 - Apparatus and measurement conditions

kSIST FprEN IEC 63567-1:2026 requires a transmittance evaluation apparatus that uses the same EUV spectrum region as the EUV exposure tool, operates in a high-vacuum environment, and supports both single-pass and double-pass measurements. That matters because EUV light is strongly absorbed by air, and the measurement has to reflect use conditions rather than a convenient laboratory setup.

Clause 4 also calls for pellicle positioning, a pellicle holder, EUV optics matched to the chief ray of angle (CRA) of the angle of incidence used in exposure, a beam splitter (BS), and two detectors. In practice, this lets the operator position the pellicle accurately, reduce vibration and source-fluctuation effects, and measure both the reference beam and the beam that passes through the pellicle.

Clause 4.4 and 4.5 - Measurement quality

kSIST FprEN IEC 63567-1:2026 sets a mean deviation target of less than 0.1% across multiple measurements, as agreed between customer and supplier. It also requires noise control, including detector cooling and suitable signal-to-noise ratio settings, so that dark current and other instrument noise do not distort the result.

Clause 5 - Specimen preparation

kSIST FprEN IEC 63567-1:2026 requires the pellicle membrane and frame to be free from visible defects such as stringers, machining burrs, anodization irregularities, and particles. It also specifies storage at 21 ± 2 °C and 40 ± 15% relative humidity, plus at least 4 h preconditioning in the measurement environment, so the specimen reaches a stable state before test.

Clauses 6 and 7 - Measurement and calculation

kSIST FprEN IEC 63567-1:2026 defines two measurement routes: double-pass transmittance and single-pass transmittance. The process first measures the EUV beam without the pellicle and then with the pellicle in place, repeating the sequence as agreed, which gives the power ratio needed for transmittance.

Clause 7 then calculates transmittance from the measured beam powers. For double-pass measurements, the BS is used to correct for source fluctuation, and single-pass transmittance is derived from the single-pass measurement method. This is the part that turns detector readings into a comparable transmittance value.

Clause 8 - Test report

kSIST FprEN IEC 63567-1:2026 requires the report to identify the testing laboratory, the commissioning laboratory, the test date, and the specimen description. If the sample is damaged during measurement, the report also includes a photograph and the cause of damage, which is useful for traceability and failure analysis.

What terms does kSIST FprEN IEC 63567-1:2026 define?

• EUVL - extreme ultraviolet lithography, the wafer patterning process that uses short-wavelength EUV light.
• ML - multilayer mirror, a mirror with alternating layers that reflects EUV light efficiently.
• CRA - chief ray of angle, the angle of the central ray within a light cone.
• Pellicle - a protective film or membrane that prevents contamination during lithography.
• Extreme ultraviolet mask - a reflective photomask with a multilayer and patterned absorber used in EUVL.
• Beam splitter (BS) - a component that divides the EUV beam so source fluctuations can be corrected during measurement.
• Double-pass transmittance - the transmittance based on EUV light passing through the pellicle twice.
• Single-pass transmittance - the transmittance based on EUV light passing through the pellicle once.

Who uses kSIST FprEN IEC 63567-1:2026?

kSIST FprEN IEC 63567-1:2026 is used in the semiconductor and EUV lithography supply chain. Pellicle manufacturers use it to characterize membrane transmission, mask and reticle suppliers use it to assess protective pellicles, and metrology or inspection laboratories use it to run the measurements.

It is also relevant to quality managers, technical buyers, and engineering teams that compare supplier data or define acceptance testing. The practical tasks are setting up the measurement, preparing and conditioning specimens, calculating transmittance, and documenting the result in a consistent report.

What does the kSIST FprEN IEC 63567-1:2026 document contain?

The document contains apparatus schematics, measurement-process schematics, calculation equations, and test-report content. Figure 1 shows example apparatus layouts for double-pass and single-pass measurement, and Figure 2 shows the measurement sequence for both methods.

Annex A gives explanatory material and example pellicle images and test results. It includes examples based on scanning and point-to-point methods, which helps readers understand how transmittance data can be mapped across a pellicle membrane.

SLOVENSKI STANDARD
oSIST prEN IEC 63567-1:2026
01-februar-2026
Polprevodniški elementi - Vrednotenje učinkovitosti komponent za obdelavo
polprevodnikov in opreme za pregledovanje - 1. del: Metoda ocenjevanja
prepustnosti pelikule EUV
Semiconductor devices - Performance evaluation of semiconductor processing
components and inspection equipment - Part 1: Transmittance evaluation method of
EUV pellicle
Ta slovenski standard je istoveten z: prEN IEC 63567-1:2025
ICS:
31.080.99 Drugi polprevodniški elementi Other semiconductor devices
oSIST prEN IEC 63567-1:2026 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

oSIST prEN IEC 63567-1:2026
oSIST prEN IEC 63567-1:2026
47/2976/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 63567-1 ED1
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2025-12-19 2026-03-13
SUPERSEDES DOCUMENTS:
47/2860/CD, 47/2935/CC
IEC TC 47 : SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Cheolung Cha
OF INTEREST TO THE FOLLOWING COMMITTEES: HORIZONTAL FUNCTION(S):

ASPECTS CONCERNED:
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
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TITLE:
Semiconductor devices - Performance evaluation of semiconductor processing components
and inspection equipment - Part 1: Transmittance evaluation method of EUV pellicle

PROPOSED STABILITY DATE: 2029
NOTE FROM TC/SC OFFICERS:
download this electronic file, to make a copy and to print out the content for the sole purpose of preparing National
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oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
1 CONTENTS
3 FOREWORD . 2
4 1 Scope . 4
5 2 Normative references . 4
6 3 Terms, definitions, symbols, and abbreviated terms . 4
7 3.1 Terms and definitions. 4
8 3.2 Symbols and abbreviated terms . 5
9 4 Apparatus . 5
10 4.1 General . 5
11 4.2 Requirements and components for transmittance evaluation apparatus of
12 pellicle . 6
13 4.3 EUV light source condition . 7
14 4.4 Accuracy of EUV pellicle transmittance measurement . 7
15 4.5 Controlling noise induced by instruments . 7
16 5 Specimen preparation . 7
17 5.1 Specimen requirements . 7
18 5.2 Storage conditions . 7
19 5.3 Preconditioning for measurements . 7
20 6 Transmittance evaluation process of EUV pellicle . 8
21 6.1 General . 8
22 6.2 Measurement process . 8
23 7 Determining the transmittance via calculation . 8
24 7.1 General . 8
25 7.2 Determining double-pass transmittance of pellicle . 9
26 7.3 Determining Single-pass transmittance for pellicle . 9
27 8 Test report . 10
28 Annex A (informative) Transmittance of extreme ultraviolet pellicle . 11
29 A.1 General . 11
30 A.2 Examples of pellicle images and test results . 11
31 Bibliography . 13
33 Figure 1 –Examples of the transmittance evaluation apparatuses for the EUV pellicle,
34 illustrating the optical system for evaluating a) double-pass transmittance and b)
35 single-pass transmittance of the pellicle . 6
36 Figure 2 – Schematics of the measurement process of a1) and a2) double-pass
37 transmittance of the pellicle and b1) and b2) single-pass transmittance of the pellicle. . 8
38 Figure A.1 – a) Photograph of EUV pellicle and b) schematic cross-sectional image of
39 EUV pellicle . 11
40 Figure A.2 – Examples of the sample image and test results of the scanning method . 12
41 Figure A.3 – Examples of the point-to-point method test results: a) depicts the
42 measured positions on the pellicle image of a coupon size, b) shows the EUV
43 transmittance in relation to the measured positions from a) . 12
45 Table 1 – Letter symbols and abbreviated terms . 5
oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
47 INTERNATIONAL ELECTROTECHNICAL COMMISSION
48 ____________
50 SEMICONDUCTOR DEVICES -
51 PERFORMANCE EVALUATION OF SEMICONDUCTOR PROCESSING
52 COMPONENTS AND INSPECTION EQUIPMENT
54 Part 1: Transmittance evaluation method of EUV pellicle
56 FOREWORD
57 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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93 IEC 63567-1 has been prepared by IEC technical committee 47: Semiconductor devices. It is
94 an International Standard.
95 The text of this International Standard is based on the following documents:
Draft Report on voting
XX/XX/FDIS XX/XX/RVD
oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
97 Full information on the voting for its approval can be found in the report on voting indicated in
98 the above table.
99 The language used for the development of this […International Standard, Technical
100 Specification: specify document type…] is English [change language if necessary].
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109 • reconfirmed,
110 • withdrawn,
111 • replaced by a revised edition, or
112 • amended.
oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
114 SEMICONDUCTOR DEVICES -
115 PERFORMANCE EVALUATION OF SEMICONDUCTOR PROCESSING
116 COMPONENTS AND INSPECTION EQUIPMENT
118 Part 1: Transmittance evaluation method of EUV pellicle
121 1 Scope
122 This part of IEC 63567-1 proposes a method of measuring the transmittance of extreme
123 ultraviolet (EUV) pellicle used for extreme ultraviolet lithography (EUVL) and provides
124 guidelines on the conditions of the transmittance measurement instrument using EUV with a
125 short wavelength and methods for calculating EUV transmittance.
126 The scope of this document applies to all types of membranes attached to the front side of a
127 reflective mask (or reflective reticle) used in EUVL to physically protect the reflective mask from
128 contaminant particles generated inside the chamber during EUV exposure.
129 2 Normative references
130 There are no normative references in this document.
131 3 Terms, definitions, symbols, and abbreviated terms
132 For the purposes of this document, the following terms and definitions apply.
133 ISO and IEC maintain terminology databases for use in standardization at the following
134 addresses:
135 • IEC Electropedia: available at https://www.electropedia.org/
136 • ISO Online browsing platform: available at https://www.iso.org/obp
137 3.1 Terms and definitions
138 3.1.1
139 extreme ultraviolet lithography
140 EUVL
141 pattern creation on semiconductor wafers using short-wavelength EUV light (e.g., 13.5 nm
142 wavelength), a technique enabling efficient production of smaller electronic devices in
143 semiconductor manufacturing
144 3.1.2
145 multilayer mirror
146 ML
147 mirror coated with alternating layers of two different materials enabling efficient reflection of X -
148 ray and EUV light
149 3.1.3
150 chief ray of angle
151 CRA
152 angle of central ray within a light cone
oSIST prEN IEC 63567-1:2026
IEC CDV 63567-1 © IEC 2025
153 3.1.4
154 pellicle
155 protective film or membrane for preventing contamination during the lithography process
156 3.1.5
157 extreme ultraviolet mask
158 reflective photomask engraved with circuit patterns utilized in EUVL, consisting of a multilayer
159 and patterned absorber
160 Note 1 to entry: The alternative terms “EUV reticle” and “EUV photomask” are also often used in technical documents.
161 3.1.6
162 full-size pellicle
163 pellicle covering the entire surface area of a photomask, for instance, a full-size pellicle in EUVL
164 measures 110×144 𝑚𝑚
165 3.1.7
166 coupon-size pellicle
167 pellicle smaller than full-size pellicle, fabricated for testing optical, thermal, chemical, and
168 mechanical properties of the membrane materials
169 Note 1 to entry: The alternative term “pellicle coupon” is also often used in documents.
170 3.1.8
171 single-pass transmittance
172 ratio of photons passing thr
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