Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films

IEC 62047-8:2011 specifies the strip bending test method to measure tensile properties of thin films with high accuracy, repeatability, moderate effort of alignment and handling compared to the conventional tensile test. This testing method is valid for test pieces with a thickness between 50 nm and several mum, and with an aspect ratio (ratio of length to thickness) of more than 300. The hanging strip (or bridge) between two fixed supports are widely adopted in MEMS or micro-machines. It is much easier to fabricate these strips than the conventional tensile test pieces. The test procedures are so simple to be readily automated. This international standard can be utilized as a quality control test for MEMS production since its testing throughput is very high compared to the conventional tensile test.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 8: Streifen-Biege-Prüfverfahren zur Messung von Zugbeanspruchungsmerkmalen dünner Schichten

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 8: Méthode d'essai de la flexion de bandes en vue de la mesure des propriétés de traction des couches minces

La CEI 62047-8:2011 spécifie la méthode d'essai de flexion de bandes, afin de mesurer les propriétés de traction des couches minces avec une haute précision, répétabilité, un effort modéré d'alignement et de manipulation en comparaison de l'essai de traction conventionnel. La méthode d'essai est valable pour les éprouvettes d'essai dont l'épaisseur est comprise entre 50 nm et plusieurs mum, et dont le rapport, (soit le rapport de la longueur de l'éprouvette à son épaisseur) est supérieur 300. La bande suspendue (ou le pont) entre deux supports fixés est largement adoptée dans les MEMS ou dans les micromachines. Ces bandes sont bien plus faciles à fabriquer que les éprouvettes d'essai à la traction conventionnelles. Les procédures d'essai sont si simples qu'elles sont aisément automatisées. La présente norme internationale peut être utilisée en tant qu'essai de contrôle de la qualité pour la production des MEMS étant donné que son débit d'essai est très élevé comparé à l'essai de traction conventionnel.

Polprevodniški elementi - Mikroelektromehanski elementi - 8. del: Preskusna metoda z upogibanjem traku za merjenje nateznih lastnosti tankih plasti

Ta mednarodni standard opredeljuje preskusno metodo z upogibanjem traku za merjenje nateznih lastnosti tankih plasti z visoko natančnostjo, ponovljivostjo, zmernim naporom pri naravnavi in ravnanju v primerjavi s konvencionalnim nateznim preskusom. Ta metoda preskušanja velja za preskušance debeline med 50 nm in nekaj mm in z razmerjem dolžina/debelina več kot 300. Viseči trak (ali most) med dvema pritrjenima oporama se široko uporablja pri MEMS ali mikrostrojih. Mnogo lažje je proizvesti te trakove kot preskušance za konvencionalni natezni preskus. Postopki preskušanja so tako preprosti, da jih je mogoče hitro avtomatizirati. Ta mednarodni standard se lahko uporabi kot kontrolni preskus kakovosti za proizvodnjo MEMS, saj je njegova prepustnost količine na enoto časa zelo visoka v primerjavi s konvencionalnim nateznim preskusom.

General Information

Status
Published
Publication Date
05-May-2011
Withdrawal Date
17-Apr-2014
Current Stage
6060 - Document made available - Publishing
Start Date
06-May-2011
Completion Date
06-May-2011

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SLOVENSKI STANDARD
01-julij-2011
Polprevodniški elementi - Mikroelektromehanski elementi - 8. del: Preskusna
metoda z upogibanjem traku za merjenje nateznih lastnosti tankih plasti
Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test
method for tensile property measurement of thin films
Ta slovenski standard je istoveten z: EN 62047-8:2011
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD
EN 62047-8
NORME EUROPÉENNE
May 2011
EUROPÄISCHE NORM
ICS 31.080.99
English version
Semiconductor devices -
Micro-electromechanical devices -
Part 8: Strip bending test method for tensile property measurement of thin
films
(IEC 62047-8:2011)
Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Dispositifs microélectromécaniques - Bauelemente der Mikrosystemtechnik -
Partie 8: Méthode d'essai de la flexion de Teil 8: Streifen-Biege-Prüfverfahren zur
bandes en vue de la mesure des Messung von
propriétés de traction des couches minces Zugbeanspruchungsmerkmalen dünner
(CEI 62047-8:2011) Schichten
(IEC 62047-8:2011)
This European Standard was approved by CENELEC on 2011-04-18. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

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the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
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Spain, Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Management Centre: Avenue Marnix 17, B - 1000 Brussels

© 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-8:2011 E
Foreword
The text of document 47F/71/FDIS, future edition 1 of IEC 62047-8, prepared by SC 47F,
Micro-electromechanical systems, of IEC TC 47, Semiconductor devices, was submitted to the IEC-
CENELEC parallel vote and was approved by CENELEC as EN 62047-8 on 2011-04-18.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
(dop) 2012-01-18
national standard or by endorsement
– latest date by which the national standards conflicting
(dow) 2014-04-18
with the EN have to be withdrawn
__________
Endorsement notice
The text of the International Standard IEC 62047-8:2011 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards indicated:
IEC 62047-2:2006 NOTE  Harmonized as EN 62047-2:2006 (not modified).
IEC 62047-3:2006 NOTE  Harmonized as EN 62047-3:2006 (not modified).
__________
IEC 62047-8 ®
Edition 1.0 2011-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 8: Strip bending test method for tensile property measurement of thin films

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 8: Méthode d’essai de la flexion de bandes en vue de la mesure des
propriétés de traction des couches minces

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX R
ICS 31.080.99 ISBN 978-2-88912-395-7

– 2 – 62047-8 Ó IEC:2011
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 5
4.1 General . 5
4.2 Actuator . 6
4.3 Load tip . 6
4.4 Alignment mechanism . 6
4.5 Force and displacement sensors . 6
4.6 Test environment. 6
5 Test piece . 6
5.1 General . 6
5.2 Shape of test piece . 7
5.3 Measurement of test piece dimension . 7
6 Test procedure and analysis . 8
6.1 General . 8
6.2 Data analysis . 8
7 Test report. 9
Annex A (informative) Data analysis: Test results by using nanoindentation apparatus . 10
Annex B (informative) Test piece fabrication: MEMS process . 13
Annex C (informative) Effect of misalignment and geometry on property measurement . 15
Bibliography . 18

Figure 1 – Thin film test piece . 7
Figure 2 – Schematic of strip bending test . 9
Figure A.1 – Three successive indents for determining the reference location of a test
piece . 10
Figure A.2 – A schematic view of nanoindentation apparatus . 11
Figure A.3 – Actuator force vs. deflection curves for strip bending test and for leaf
spring test . 11
Figure A.4 – Force vs. deflection curve of a test piece after compensating the stiffness
of the leaf spring . 12
Figure B.1 – Fabrication procedure for test piece . 13
Figure C.1 – Finite element analysis of errors based on the constitutive data of Au thin
film of 1 mm thick . 16
Figure C.2 – Translational (d) and angular (a, b, g) misalignments . 17

Table 1 – Symbols and designations of a test piece . 7

62047-8 Ó IEC:2011 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 8: Strip bending test method
for tensile property measurement of thin films

FOREWORD
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9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-8 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices
The text of this standard is based on the following documents:
FDIS Report on voting
47F/71/FDIS 47F/77/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts of IEC 62047, under the general title Semiconductor devices – Micro-
electromechanical devices can be found on the IEC website.

– 4 – 62047-8 Ó IEC:2011
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
62047-8 Ó IEC:2011 – 5 –
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 8: Strip bending test method
for tensile property measurement of thin films

1 Scope
This international standard specifies the strip bending test
...

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