IEC TS 62607-6-3:2020
(Main)Nanomanufacturing - Key control characteristics - Part 6-3: Graphene-based material - Domain size: substrate oxidation
Nanomanufacturing - Key control characteristics - Part 6-3: Graphene-based material - Domain size: substrate oxidation
IEC TS 62607:2020 establishes a standardized method to determine the structural key control characteristic
– domain size
for films consisting of graphene grown by chemical vapour deposition (CVD) on copper by
– substrate oxidation.
It provides a fast, facile and reliable method to evaluate graphene domains formed on copper foil or copper film for understanding the effect of the graphene domain size on properties of graphene and enhancing the performance of high speed, flexible, and transparent devices using CVD graphene.
– The domain size determined in accordance with this document will be listed as a key control characteristic in the blank detail specification for graphene IEC 62565-3-1. Domain density is an equivalent measure.
– The domain size as derived by this method is defined as the mean value of size of the domains in the observed area specified by supplier in terms of cm2 or µm2.
– The method is applicable for graphene grown on copper by CVD. The characterization is done on the copper foil before transfer to the final substrate.
– As the method is destructive, the samples cannot be re-launched into the fabrication process.
General Information
- Status
- Published
- Publication Date
- 26-Oct-2020
- Technical Committee
- TC 113 - Nanotechnology for electrotechnical products and systems
- Drafting Committee
- JPT 62607-6-3 - TC 113/JPT 62607-6-3
- Current Stage
- PPUB - Publication issued
- Start Date
- 27-Oct-2020
- Completion Date
- 12-Nov-2020
Overview
IEC TS 62607-6-3:2020 specifies a standardized, reproducible method to determine the graphene domain size for films grown by chemical vapour deposition (CVD) on copper using substrate oxidation. The Technical Specification defines domain size as the mean area of graphene domains in the observed area (reported in cm² or µm²), and notes domain density as an equivalent metric. The measurement is performed on the copper foil/film prior to transfer and is a destructive test - samples cannot be returned to production.
Keywords: IEC TS 62607-6-3:2020, graphene domain size, substrate oxidation, CVD graphene, copper foil, nanomanufacturing, key control characteristic.
Key topics and technical requirements
- Scope and purpose
- Establishes a fast, facile and reliable method to evaluate graphene domains formed on copper by substrate oxidation.
- Designed to link domain size to functional properties of graphene for device performance improvement.
- Measurement principle
- Oxidation of the copper substrate selectively through graphene boundaries reveals domain boundaries for imaging and analysis.
- Sample preparation and measurement
- Characterization is carried out on CVD-grown graphene on copper before any transfer steps.
- The method includes calibration requirements (reference to ASTM E1951-14) and defined ambient/measurement conditions.
- Analysis and reporting
- Domain size reported as mean area over the supplier-specified observed area.
- Measurement protocol, data to be reported (product/sample ID, test conditions, measurement results) and worked examples (optical/SEM imaging and image analysis tools) are provided.
- Limitations
- Method applies to graphene grown on copper by CVD only.
- Destructive nature prevents reuse of tested samples in fabrication.
Applications and practical value
- Quality control and process monitoring for manufacturers of CVD graphene on copper foil or copper films.
- Materials and process engineers evaluating how domain size and domain density affect electrical, thermal and mechanical properties.
- R&D and production teams developing high-speed, flexible, and transparent electronic/optoelectronic devices (e.g., FETs, transparent electrodes, flexible displays).
- Enables suppliers to specify a key control characteristic (KCC) for graphene in the blank detail specification IEC 62565-3-1.
Who should use this standard
- Graphene producers, process engineers, QC labs, materials scientists, device integrators, and certification bodies needing a standardized, reproducible method to quantify graphene domain size for product specifications and performance correlation.
Related standards
- IEC 62565-3-1 (blank detail specification for graphene) - lists the domain size KCC determined by this method.
- ASTM E1951-14 - referenced for microscope magnification calibration.
This Technical Specification supports consistent, comparable reporting of graphene domain metrics across suppliers and users, improving traceability and device performance optimization in nanomanufacturing.
Frequently Asked Questions
IEC TS 62607-6-3:2020 is a technical specification published by the International Electrotechnical Commission (IEC). Its full title is "Nanomanufacturing - Key control characteristics - Part 6-3: Graphene-based material - Domain size: substrate oxidation". This standard covers: IEC TS 62607:2020 establishes a standardized method to determine the structural key control characteristic – domain size for films consisting of graphene grown by chemical vapour deposition (CVD) on copper by – substrate oxidation. It provides a fast, facile and reliable method to evaluate graphene domains formed on copper foil or copper film for understanding the effect of the graphene domain size on properties of graphene and enhancing the performance of high speed, flexible, and transparent devices using CVD graphene. – The domain size determined in accordance with this document will be listed as a key control characteristic in the blank detail specification for graphene IEC 62565-3-1. Domain density is an equivalent measure. – The domain size as derived by this method is defined as the mean value of size of the domains in the observed area specified by supplier in terms of cm2 or µm2. – The method is applicable for graphene grown on copper by CVD. The characterization is done on the copper foil before transfer to the final substrate. – As the method is destructive, the samples cannot be re-launched into the fabrication process.
IEC TS 62607:2020 establishes a standardized method to determine the structural key control characteristic – domain size for films consisting of graphene grown by chemical vapour deposition (CVD) on copper by – substrate oxidation. It provides a fast, facile and reliable method to evaluate graphene domains formed on copper foil or copper film for understanding the effect of the graphene domain size on properties of graphene and enhancing the performance of high speed, flexible, and transparent devices using CVD graphene. – The domain size determined in accordance with this document will be listed as a key control characteristic in the blank detail specification for graphene IEC 62565-3-1. Domain density is an equivalent measure. – The domain size as derived by this method is defined as the mean value of size of the domains in the observed area specified by supplier in terms of cm2 or µm2. – The method is applicable for graphene grown on copper by CVD. The characterization is done on the copper foil before transfer to the final substrate. – As the method is destructive, the samples cannot be re-launched into the fabrication process.
IEC TS 62607-6-3:2020 is classified under the following ICS (International Classification for Standards) categories: 07.030 - Physics. Chemistry; 07.120 - Nanotechnologies. The ICS classification helps identify the subject area and facilitates finding related standards.
You can purchase IEC TS 62607-6-3:2020 directly from iTeh Standards. The document is available in PDF format and is delivered instantly after payment. Add the standard to your cart and complete the secure checkout process. iTeh Standards is an authorized distributor of IEC standards.
Standards Content (Sample)
IEC TS 62607-6-3 ®
Edition 1.0 2020-10
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 6-3: Graphene-based material – Domain size: substrate oxidation
All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from
either IEC or IEC's member National Committee in the country of the requester. If you have any questions about IEC
copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or
your local IEC member National Committee for further information.
IEC Central Office Tel.: +41 22 919 02 11
3, rue de Varembé info@iec.ch
CH-1211 Geneva 20 www.iec.ch
Switzerland
About the IEC
The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes
International Standards for all electrical, electronic and related technologies.
About IEC publications
The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the
latest edition, a corrigendum or an amendment might have been published.
IEC publications search - webstore.iec.ch/advsearchform Electropedia - www.electropedia.org
The advanced search enables to find IEC publications by a The world's leading online dictionary on electrotechnology,
variety of criteria (reference number, text, technical containing more than 22 000 terminological entries in English
committee,…). It also gives information on projects, replaced and French, with equivalent terms in 16 additional languages.
and withdrawn publications. Also known as the International Electrotechnical Vocabulary
(IEV) online.
IEC Just Published - webstore.iec.ch/justpublished
Stay up to date on all new IEC publications. Just Published IEC Glossary - std.iec.ch/glossary
details all new publications released. Available online and 67 000 electrotechnical terminology entries in English and
once a month by email. French extracted from the Terms and Definitions clause of
IEC publications issued since 2002. Some entries have been
IEC Customer Service Centre - webstore.iec.ch/csc collected from earlier publications of IEC TC 37, 77, 86 and
If you wish to give us your feedback on this publication or CISPR.
need further assistance, please contact the Customer Service
Centre: sales@iec.ch.
IEC TS 62607-6-3 ®
Edition 1.0 2020-10
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 6-3: Graphene-based material – Domain size: substrate oxidation
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.030, ICS 07.120 ISBN 978-2-8322-8939-6 0
– 2 – IEC TS 62607-6-3:2020 © IEC 2020
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
3.1 General terms . 8
3.2 Graphene related terms . 8
3.3 Key control characteristics measured in accordance with this document . 9
4 General . 9
4.1 Measurement principle . 9
4.2 Sample preparation method . 10
4.3 Measurement system . 11
4.4 Description of measurement equipment/apparatus . 12
4.5 Calibration standards . 12
4.6 Ambient conditions during measurement . 12
5 Measurement procedure . 12
5.1 Calibration of measurement equipment . 12
5.2 Detailed protocol of the measurement procedure . 12
5.2.1 General . 12
5.2.2 Example . 13
6 Results to be reported . 13
6.1 General . 13
6.2 Product/sample identification . 13
6.3 Test conditions . 13
6.4 Measurement specific information . 14
6.5 Test results . 14
Annex A (informative) Worked example . 15
A.1 Example. 15
A.2 Sampling plan . 18
A.3 Format of the test report . 19
Annex B (informative) Alternative methods for evaluating graphene domains and
defects . 21
Bibliography . 22
Figure 1 – Applications of graphene . 6
Figure 2 – Schematics for oxidation of copper foil through the graphene boundaries. 10
Figure 3 – Optical image of the graphene domains on Cu foil . 11
Figure 4 – Schematic view of oxidation system . 11
Figure 5 – Optical images of graphene/Cu after oxidation and analysed grain size
distribution . 12
Figure 6 – Example of domain size analysis . 13
Figure A.1 – Photograph of graphene/Cu foil (7cm × 7 cm) for graphene grown at
1 050 °C by CVD with CH . 15
Figure A.2 – SEM image of graphene/Cu after oxidation at the points as specified in
Figure A.6 . 16
Figure A.3 – Measuring graphene domain size of Figure A.2 using Image J . 16
Figure A.4 –Domain size distribution and average domain size of graphene shown in
Figure A.2 . 17
Figure A.5 – Accumulative domain size distribution shown in Figure A.4 and average
domain size of graphene measured at 9 points shown in Figure A.6 . 18
Figure A.6 – Location of the analysed area on the sample . 18
Figure B.1 – Typical methods for observing graphene domain and grain boundaries . 21
Table A.1 – Product identification (in accordance with IEC 62565-3-1) . 19
Table A.2 – General material description (in accordance with IEC 62565-3-1). 19
Table A.3 – Measurement related information . 19
Table A.4 – KCC measurement results . 20
– 4 – IEC TS 62607-6-3:2020 © IEC 2020
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 6-3: Graphene-based material –
Domain size: substrate oxidation
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their
preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
may participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence between
any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
The main task of IEC technical committees is to prepare International Standards. In exceptional
circumstances, a technical committee may propose the publication of a Technical Specification
when
• the required support cannot be obtained for the publication of an International Standard,
despite repeated efforts, or
• the subject is still under technical development or where, for any other reason, there is the
future but no immediate possibility of an agreement on an International Standard.
Technical Specifications are subject to review within three years of publication to decide
whether they can be transformed into International Standards.
IEC TS 62607-6-3, which is a Technical Specification, has been prepared by technical
committee 113, Nanotechnology for electrotechnical products and systems.
The text of this Technical Specification is based on the following documents:
Enquiry draft Report on voting
113/496/DTS 113/549/RVDTS
Full information on the voting for the approval of this Technical Specification can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC TS 62607 series, published under the general title
Nanomanufacturing – Key control characteristics, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct understanding
of its contents. Users should therefore print this document using a colour printer.
– 6 – IEC TS 62607-6-3:2020 © IEC 2020
INTRODUCTION
Graphene with two-dimensional honeycomb structures of carbon atoms is known to have
exceptional electrical, thermal, and mechanical properties. Because of these properties,
graphene is considered for applications in high speed, flexible and transparent devices.
Figure 1 shows the images of graphene field effect transistor, flexible touch screen in display,
and transparent electrode in solar cell. These applications of graphene are promising
candidates for nanoelectronics and optoelectronics. Graphene has been widely investigated by
researchers from academic institutions, research institutes, and industries.
Figure 1 – Applications of graphene
Graphene synthesized on Cu or Ni substrate by chemical vapour deposition (CVD) is composed
of graphene domains formed during the nucleation and initial growth stage. Graphene defects,
such as pinholes, domain boundaries, and cracks, can be formed during the CVD growth or the
transfer process.
Properties of graphene are related to the size and distribution of graphene domains and defects.
As graphene domain size is increased and graphene defects are reduced, electrical and thermal
properties of graphene are improved.
Graphene domains and defects are usually observed by atomic force microscopy (AFM),
scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman
spectroscopy, and scanning tunnelling microscopy (STM). These analysis methods may cause
inconvenience in preparing a sample for analysis and require very expensive equipment that
provides only local information of several micrometres and below.
Facile, fast, reliable methods of evaluating graphene domains have not yet been established
and urgently need to be developed.
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 6-3: Graphene-based material –
Domain size: substrate oxidation
1 Scope
This part of IEC TS 62607 establishes a standardized method to determine the structural key
control characteristic
– domain size
for films consisting of graphene grown by chemical vapour deposition (CVD) on copper by
– substrate oxidation.
It provides a fast, facile and reliable method to evaluate graphene domains formed on copper
foil or copper film for understanding the effect of the graphene domain size on properties of
graphene and enhancing the performance of high speed, flexible, and transparent devices using
CVD graphene.
– The domain size determined in accordance with this document will be listed as a key control
characteristic in the blank detail specification for graphene IEC 62565-3-1. Domain density
is an equivalent measure.
– The domain size as derived by this method is defined as the mean value of size of the
2 2
domains in the observed area specified by supplier in terms of cm or µm .
– The method is applicable for graphene grown on copper by CVD. The characterization is
done on the copper foil before transfer to the final substrate.
– As the method is destructive, the samples cannot be re-launched into the fabrication process.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
ASTM E1951-14, Standard Guide for Calibrating Reticles and Light Microscope Magnification
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
– 8 – IEC TS 62607-6-3:2020 © IEC 2020
3.1
...
제목: IEC TS 62607-6-3:2020 -나노제조 - 주요 제어 특성 - 파트 6-3: 그래핀 기반 재료 - 도메인 크기: 기판 산화물 내용: IEC TS 62607:2020은 화학 기상 증착법 (CVD)을 사용하여 구리 위에 성장한 그래핀 필름에 대한 구조적인 주요 제어 특성인 도메인 크기를 결정하는 표준화된 방법을 확립한다. 이는 CVD 그래핀을 사용하여 고속, 유연 및 투명한 기기의 성능을 향상시키기 위해 구리 호일 또는 구리 필름 위에 형성된 그래핀 도메인의 영향을 이해하는 데 도움이 되는 빠르고 쉬운 방법을 제공한다. 이 문서에 따라 결정된 도메인 크기는 그래핀에 대한 빈 세부 명세서인 IEC 62565-3-1에 주요 제어 특성으로 기재될 것이다. 도메인 밀도는 동등한 측정값이다. 이 방법에 따라 파생된 도메인 크기는 공급업체가 cm2 또는 µm2로 명시한 관찰 영역 내 도메인의 평균 크기로 정의된다. 이 방법은 CVD를 통해 구리 위에 성장한 그래핀에 적용 가능하며, 특성화는 최종 기판으로 이전하기 전의 구리 호일에서 수행된다. 이 방법은 파괴적이기 때문에 샘플은 제조 공정으로 재사용될 수 없다.
The article discusses IEC TS 62607-6-3:2020, which is a standard method for determining the domain size of graphene films grown on copper using chemical vapor deposition and substrate oxidation. It offers a reliable way to evaluate the size of graphene domains on copper foil or film, which can impact the performance of devices using graphene. The domain size will be listed as a key control characteristic in the specification for graphene. The method is destructive, so samples cannot be reused in the fabrication process.
記事のタイトル:IEC TS 62607-6-3:2020 - ナノ製造- 主な制御特性- パート 6-3:グラフェンベースの材料- ドメインサイズ:基板酸化 記事の内容:IEC TS 62607:2020は、化学気相成長(CVD)により銅上に成長させたグラフェンフィルムの構造的な主な制御特性であるドメインサイズを決定するための標準化された方法を確立します。これは、CVDグラフェンを使用して高速、柔軟、透明なデバイスの性能を向上させるために、銅箔または銅フィルム上に形成されたグラフェンドメインの効果を理解するための迅速で簡便かつ信頼性の高い方法を提供します。この文書に従って決定されたドメインサイズは、グラフェンの空白詳細仕様書IEC 62565-3-1で主な制御特性としてリストされます。ドメイン密度は同等の測定です。 この方法によって導かれたドメインサイズは、サプライヤーが指定した観察エリア内のドメインのサイズの平均値として、cm2またはµm2で定義されます。この方法はCVDによって銅上に成長したグラフェンに適用され、特性評価は最終基板への転送前の銅箔上で行われます。この方法は破壊的なため、サンプルは製造プロセスへ再利用することはできません。










Questions, Comments and Discussion
Ask us and Technical Secretary will try to provide an answer. You can facilitate discussion about the standard in here.
Loading comments...