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ASTM F980-92

(Guide)

Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

SCOPE
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.  
1.2 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of whoever uses this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard information is given in 4.2.7.

General Information

Status
Historical
Publication Date
31-Dec-1991
ICS
31.080.01 - Semiconductor devices in general
Technical Committee
F01 - Electronics
Drafting Committee
F01.11 - Nuclear and Space Radiation Effects
Current Stage
Ref Project

Relations

Replaced By
ASTM F980-10 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
Effective Date
10-Jun-1996

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ASTM F980-92 - Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor DevicesASTM F980-92 - Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
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ASTM F980-92 - Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
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Standards Content (Sample)

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Standard Guide for
The Measurement of Rapid Annealing of Neutron-induced
Displacement Damage in Silicon Semiconductor Devices'
This standard is issued under the fixed designation F 980; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope in the immediate vicinity of the irradiation location. All
rapid-annealing measurements are performed in situ because
1.1 This guide defines the requirements and procedures
measurement must begin immediately following irradiation
for testing silicon discrete semiconductor devices and inte-
(usually <1 ms).
grated circuits for rapid-annealing effects from displacement
3.1.2 remote tests-electrical measurements made on de-
damage resulting from neutron radiation. This test will
vices that are physically removed from the irradiation
produce degradation of the electrical properties of the
location. For the purpose of this guide, remote tests are used
irradiated devices and should be considered a destructive
only for the characterization of the parts before and after
test. Rapid annealing of displacement damage is usually
they are subjected to the neutron radiation (see 6.4).
associated with bipolar technologies.
1.2 This standard does not purport to address all of the
4. Summary of Guide
safety problems, if any, associated with its use. It is the
4.1 A rapid-annealing radiation test requires continual
responsibility of whoever uses this standard to consult and
time-sequential electricd-parameter measurements of key
establish appropriate safety and health practices and deter-
parameters of a device be made immediately following
mine the applicability of regulatory limitations prior to use.
exposure to a pulse of neutron radiation capable of causing
Specific hazard information is given in 4.2.7.
significant displacement damage.
2. Referenced Documents
4.2 Because many factors enter into the effects of the
radiation on the part, parties to the test must establish many
2. i ASTM Standards:
circumstances of the test before the validity of the test can be
E 666 Practice for Calculating Absorbed Dose from
established or the results of one group of parts can be
Gamma or X Radiation2
meaningfully compared with those of another group. Those
E 668 Practice for Application of Thermoluminescence-
factors that must be established are as follows:
Dosimetry (TLD) Systems for Determining Absorbed
4.2.1 Radiation Source-The type and characteristics of
Dose in Radiation-Hardness Testing of Electronic De-
the neutron radiation source to be used (see 6.2).
vices'
4.2.2 Dose Rate Range-The range of ionizing dose rates
E 720 Guide for Selection of a Set of Neutron-Activation
within which the neutron exposures must take place. These
Foils for Determining Neutron Spectra Used in Radia-
dose rates and the subsequent device response should not
tion-Hardness Testing of Electronics2
influence the parametric measurements being made (see 6.6).
E 721 IMethod for Determining Neutron Energy Spectra
4.2.3 Operating Conditions-The test circuit, electrical
with Neutron-Activation Foils for Radiation-Hardness
biases to be applied, and operating sequence (if applicable)
Testing of Electronics2
for the part during and following exposure (see 6.5).
E 722 Practice for Characterizing Neutron Energy Fiuence
4.2.4 Electrical Parameter Measurements-The pre- and
Spectra in Terms of An Equivalent Monoenergetic
post-irradiation measurements to be made on the test unit
Neutron Fiuence for Radiation-Hardness Testing of
and the measurements of changes in the annealing-sensitive
Electronics2
parameters to be made beginning immediately after expo-
F 1032 Guide for Measuring Time-Dependent Total-Dose
sure.
Effects in Semiconductor Devices Exposed to Pulsed
4.2.5 Time Sequence-The exposure time, time after
Ionizing Radiation)
exposure when measurements of the selected parameter(s)
are to begin, time when measurements are to end, and time
3. Terminology
intervals between measurements.
3.1 Descriptions of Terms Specific to This Standard:
4.2.6 Neutron Fluence Levels-The fluence range re-
3.1. I in situ rests-electrical measurements made on
quired to sustain the desired damage to the device.
devices before, after, or during irradiation while they remain
4.2.6.1 Total Dose Levels-If the part is sensitive to an
accompanying type of radiation (such as gamma rays) the
levels to which the part can be exposed before the rapid-
I Th
...

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4.1 Illustrations provided in this guide are intended for use as references to aid in interpreting film or nonfilm images resulting from x-ray examinations (see Table 1) to ascertain quality of assembly and workmanship.  
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1.3 Basis of Application—There are areas in this practice that may require agreement between the cognizant engineering organization and the supplier, or specific direction from the cognizant engineering organization. These items should be addressed in the purchase order, contract, or inspection technique. Specific applications may require adherence to this practice in part or in full. Deviations from this practice shall be enumerated in inspection plan and approved by both cognizant engineering organization and supplier.  
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Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

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5.1 This practice is important in characterizing the radiation hardness of electronic devices irradiated by neutrons. This characterization makes it feasible to predict some changes in operational properties of irradiated semiconductor devices or electronic systems. To facilitate uniformity of the interpretation and evaluation of results of irradiations by sources of different fluence spectra, it is convenient to reduce the incident neutron fluence from a source to a single parameter—an equivalent monoenergetic neutron fluence—applicable to a particular semiconductor material.  
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SCOPE
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5.1 Electronic circuits used in space, military, and nuclear power systems may be exposed to various levels of ionizing radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in such systems.  
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1.8 Displacement damage effects are outside the scope of this guide, as well.  
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Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

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5.1 Many modern integrated circuits, power transistors, and other devices experience SEP when exposed to cosmic rays in interplanetary space, in satellite orbits or during a short passage through trapped radiation belts. It is essential to be able to predict the SEP rate for a specific environment in order to establish proper techniques to counter the effects of such upsets in proposed systems. As the technology moves toward higher density ICs, the problem is likely to become even more acute.  
5.2 This guide is intended to assist experimenters in performing ground tests to yield data enabling SEP predictions to be made.
SCOPE
1.1 This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy ions having an atomic number Z ≥ 2. This description specifically excludes the effects of neutrons, protons, and other lighter particles that may induce SEP via another mechanism. SEP includes any manifestation of upset induced by a single ion strike, including soft errors (one or more simultaneous reversible bit flips), hard errors (irreversible bit flips), latchup (persistent high conducting state), transients induced in combinatorial devices which may introduce a soft error in nearby circuits, power field effect transistor (FET) burn-out and gate rupture. This test may be considered to be destructive because it often involves the removal of device lids prior to irradiation. Bit flips are usually associated with digital devices and latchup is usually confined to bulk complementary metal oxide semiconductor, (CMOS) devices, but heavy ion induced SEP is also observed in combinatorial logic programmable read only memory, (PROMs), and certain linear devices that may respond to a heavy ion induced charge transient. Power transistors may be tested by the procedure called out in Method 1080 of MIL STD 750.  
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SCOPE
1.1 This test method determines the change in length on drying of mortar bars containing hydraulic cement and graded standard sand.  
1.2 The values stated in SI units are to be regarded as standard. When combined standards are referenced, the selection of measurement system is at the user’s discretion subject to the requirements of the referenced standard.  
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. Warning—Fresh hydraulic cementitious mixtures are caustic and may cause chemical burns to skin and tissue upon prolonged exposure).2  
1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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  • Standard
    4 pages
    English language
    sale 15% off