ASTM F980-10

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

SIGNIFICANCE AND USE
Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in them. A determination of hardness is often necessary for the short term (≈100 μs) as well as long term (permanent damage) following exposure. See Practice E722.
SCOPE
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.  
1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1) , but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard.
1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 09-Jun-1996
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaces: ASTM F980-92 - Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
• Effective Date: 10-Jun-1996
• Replaced By: ASTM F980-10e1 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
• Effective Date: 01-Dec-2010
• Referred By: ASTM E1854-19 - Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
• Effective Date: 10-Jun-1996
• Referred By: ASTM F1190-18 - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
• Effective Date: 10-Jun-1996

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: F980 − 10
StandardGuide for
Measurement of Rapid Annealing of Neutron-Induced
1
Displacement Damage in Silicon Semiconductor Devices
ThisstandardisissuedunderthefixeddesignationF980;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginal
adoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscript
epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope E666Practice for CalculatingAbsorbed Dose From Gamma
or X Radiation
1.1 This guide defines the requirements and procedures for
E720Guide for Selection and Use of Neutron Sensors for
testing silicon discrete semiconductor devices and integrated
Determining Neutron Spectra Employed in Radiation-
circuits for rapid-annealing effects from displacement damage
Hardness Testing of Electronics
resulting from neutron radiation. This test will produce degra-
E721Guide for Determining Neutron Energy Spectra from
dation of the electrical properties of the irradiated devices and
Neutron Sensors for Radiation-Hardness Testing of Elec-
should be considered a destructive test. Rapid annealing of
tronics
displacement damage is usually associated with bipolar tech-
E722PracticeforCharacterizingNeutronFluenceSpectrain
nologies.
Terms of an Equivalent Monoenergetic Neutron Fluence
1.1.1 Heavy ion beams can also be used to characterize
2 for Radiation-Hardness Testing of Electronics
displacement damage annealing (1) , but ion beams have
E1854Practice for Ensuring Test Consistency in Neutron-
significant complications in the interpretation of the resulting
Induced Displacement Damage of Electronic Parts
devicebehaviorduetotheassociatedionizingdose.Theuseof
E1855Test Method for Use of 2N2222A Silicon Bipolar
pulsed ion beams as a source of displacement damage is not
Transistors as Neutron Spectrum Sensors and Displace-
within the scope of this standard.
ment Damage Monitors
1.2 The values stated in SI units are to be regarded as
E1894Guide for Selecting Dosimetry Systems for Applica-
standard. No other units of measurement are included in this
tion in Pulsed X-Ray Sources
standard.
F1032Guide for Measuring Time-Dependent Total-Dose
1.3 This standard does not purport to address all of the Effects in Semiconductor Devices Exposed to Pulsed
safety concerns, if any, associated with its use. It is the
Ionizing Radiation (Discontinued 1994) (Withdrawn
4
responsibility of the user of this standard to consult and
1994)
establish appropriate safety and health practices and deter-
mine the applicability of regulatory limitations prior to use. 3. Terminology
3.1 Definitions of Terms Specific to This Standard:
2. Referenced Documents
3.1.1 annealing function—the ratio of the change in the
3
2.1 ASTM Standards: displacementdamagemetric(asmanifestedindeviceparamet-
E264Test Method for Measuring Fast-Neutron Reaction ric measurements) as a function of time following a pulse of
Rates by Radioactivation of Nickel neutrons and the change in the residual late-time displacement
damage metric remaining at the time the initial damage
E265Test Method for Measuring Reaction Rates and Fast-
Neutron Fluences by Radioactivation of Sulfur-32 achieves quasi equilibrium.
3.1.1.1 Discussion—This late-time quasi-equilibrium time
is sometimes set to a fixed time on the order of approximately
1
1000 s, or it is, as inTest Method E1855, set to a displacement
This guide is under the jurisdiction of ASTM Committee F01 on Electronics
and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space
damage measurement made after low temperature thermal
Radiation Effects.
stabilizing anneal procedure of 80°C for 2 h. Fig. 1 shows an
Current edition approved Dec. 1, 2010. Published January 2011. Originally
example of the annealing function for a 2N2907 pnp bipolar
approved in 1986. Last previous edition approved in 2003 as F980M–96(2003).
DOI: 10.1520/F0980-10. transistor with an operational current of 2 mAduring and after
2
Theboldfacenumbersinparenthesesrefertothelistofreferencesattheendof
the irradiation. The displacement damage metric of interest is
this standard.
3
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
4
Standards volume information, refer to the standard’s Document Summary page on The last approved version of this historical standard is referenced on
the ASTM website. www.astm.org.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1

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F980 − 10
FIG. 1 Example Annealing Function for a 2N2907 Bipolar Transistor
often the reciprocal gain change in a bipolar device. This 3.1.3.1 Discussion—For reactor neutron ir
...

This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation:F980M–96 (Reapproved 2003) Designation: F980 – 10
Standard Guide for
Measurement of Rapid Annealing of Neutron-Induced
Displacement Damage in Silicon Semiconductor Devices
1
(Metric)
This standard is issued under the fixed designation F980M;F980; the number immediately following the designation indicates the year
of original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval.
A superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1 Thisguidedefinestherequirementsandproceduresfortestingsilicondiscretesemiconductordevicesandintegratedcircuits
for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the
electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage
is usually associated with bipolar technologies.
1.2
2
1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1) , but ion beams have significant
complicationsintheinterpretationoftheresultingdevicebehaviorduetotheassociatedionizingdose.Theuseofpulsedionbeams
as a source of displacement damage is not within the scope of this standard.
1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of
regulatory limitations prior to use.
2. Referenced Documents
3
2.1 ASTM Standards:
E264 Test Method for Measuring Fast-Neutron Reaction Rates by Radioactivation of Nickel
E265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
E666 Practice for Calculating Absorbed Dose From Gamma or X Radiation
E720 Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness
Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
E722 Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for
Radiation-Hardness Testing of Electronics
E1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
E1855 Test Method for Use of 2N2222ASilicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage
Monitors
E1894 Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
F1032 Guide for Measuring Time-Dependent Total-Dose Effects in Semiconductor Devices Exposed to Pulsed Ionizing
Radiation (Discontinued 1994)
3. Terminology
3.1 Definitions of Terms Specific to This Standard:
1
This guide is under the jurisdiction of ASTM Committee F01 on Electronics and is the direct responsibility of Subcommittee F01.11 .
Current edition approved June 10, 2003. Published June 2003. Originally approved in 1986. Last previous edition approved in 1996 as F980M–96. DOI:
10.1520/F0980M-96R03.on Nuclear and Space Radiation Effects.
Current edition approved Dec. 1, 2010. Published January 2011. Originally approved in 1986. Last previous edition approved in 2003 as F980M – 96(2003). DOI:
10.1520/F0980-10.
2
For referencedASTM standards, visit theASTM website, www.astm.org, or contactASTM Customer Service at [e-mail]. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
2
The boldface numbers in parentheses refer to the list of references at the end of this standard.
3
The boldface numbers in parentheses refer to the list of references at the end of this standard.
3
For referencedASTM standards, visit theASTM website, www.astm.org, or contactASTM Customer Service at [e-mail]. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

---------------------- Page: 1 ----------------------
F980 – 10
3.1.1 annealing factorfunction—the ratio of the change in the displacement damage metric (as manifested in device parametric
measurements) as a function of time following a pulse of neutrons
...