ASTM E1855-05e1

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

SCOPE
1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors.
1.2 The neutron displacement damage is especially valuable as a spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 X 1012 n/cm2 and 1 X 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.
1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.

General Information

• Status: Historical
• Publication Date: 30-Jun-2005
• ICS: 31.200 - Integrated circuits. Microelectronics
• Technical Committee: E10 - Nuclear Technology and Applications
• Drafting Committee: E10.07 - Radiation Dosimetry for Radiation Effects on Materials and Devices

Relations

• Replaces: ASTM E1855-05 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
• Effective Date: 01-Jul-2005
• Replaced By: ASTM E1855-10 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
• Effective Date: 01-Oct-2010
• Referred By: ASTM F1190-18 - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
• Effective Date: 01-Jul-2005
• Referred By: ASTM F980-16 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
• Effective Date: 01-Jul-2005
• Referred By: ASTM E1854-19 - Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
• Effective Date: 01-Jul-2005
• Referred By: ASTM E721-22 - Standard Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
• Effective Date: 01-Jul-2005

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
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Designation:E1855–05
Standard Test Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
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Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
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´ NOTE—Editorial changes were made throughout in September 2005.
1. Scope E170 TerminologyRelatingtoRadiationMeasurementsand
Dosimetry
1.1 This test method covers the use of 2N2222A silicon
E261 Practice for Determining Neutron Fluence, Fluence
bipolartransistorsasdosimetrysensorsinthedeterminationof
Rate, and Spectra by Radioactivation Techniques
neutron energy spectra, and as silicon 1-MeV equivalent
E265 Test Method for Measuring Reaction Rates and Fast-
displacement damage fluence monitors.
Neutron Fluences by Radioactivation of Sulfur-32
1.2 Theneutrondisplacementdamageisespeciallyvaluable
E720 Guide for Selection and Use of Neutron Sensors for
as a spectrum sensor in the range 0.1 to 2.0 MeV when fission
Determining Neutron Spectra Employed in Radiation-
foils are not available. It has been applied in the fluence range
12 2 14 2
Hardness Testing of Electronics
between 2 3 10 n/cm and 1 3 10 n/cm and should be
15 2
E721 Guide for Determining Neutron Energy Spectra from
useful up to 10 n/cm . This test method details the steps for
Neutron Sensors for Radiation-Hardness Testing of Elec-
the acquisition and use of silicon 1-MeV equivalent fluence
tronics
information (in a manner similar to the use of activation foil
E722 Practice for Characterizing Neutron Fluence Spectra
data) for the determination of neutron spectra.
inTermsofanEquivalentMonoenergeticNeutronFluence
1.3 In addition, this sensor can provide important confirma-
for Radiation-Hardness Testing of Electronics
tion of neutron spectra determined with other sensors, and
E844 Guide for Sensor Set Design and Irradiation for
yields a direct measurement of the silicon 1-MeV fluence by
Reactor Surveillance, E 706(IIC)
the transfer technique.
E944 Guide for Application of Neutron Spectrum Adjust-
1.4 This standard does not purport to address all of the
ment Methods in Reactor Surveillance, E 706 (IIA)
safety concerns, if any, associated with its use. It is the
E1854 Practice for Ensuring Test Consistency in Neutron-
responsibility of the user of this standard to establish appro-
Induced Displacement Damage of Electronic Parts
priate safety and health practices and determine the applica-
E2005 Guide for Benchmark Testing of Reactor Dosimetry
bility of regulatory requirements prior to use.
in Standard and Reference Neutron Fields
2. Referenced Documents
3. Terminology
2.1 The ASTM standards E170, E261, and E265 provide a
3.1 Symbols:
background for understanding how sensors are used in radia-
F =thesilicon1-MeVequivalentfluence(seePracticeE722).
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tion measurements and general dosimetry. The rest of the
h =i /i where i is the collector current and i is the base
standards referenced in the list discuss the choice of sensors, FE c b c b
current, in a common emitter circuit.
spectrumdeterminationswithsensordata,andthepredictionof
neutron displacement damage in some semiconductor devices,
4. Summary of Test Method
particularly silicon.
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4.1 Gaindegradationof2N2222Asiliconbipolartransistors
2.2 ASTM Standards:
measured in a test (simulation) environment is compared with
that measured in a reference neutron environment. The F in
1r
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ThistestmethodisunderthejurisdictionofASTMCommitteeE10onNuclear
thereferenceenvironmentisderivedfromtheknownreference
Technology and Applications and is the direct responsibility of Subcommittee
spectrum and is used to determine a measured F in the test
1t
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices.
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environment (1,2) by the transfer technique. The subscripts r
Current edition approved July 1, 2005. Published August 2005. Originally
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approved in 1996. Last previous edition approved in 2004 as E1855–04 . DOI:
and t refer to the reference and test environments respectively.
10.1520/E1855-05E01.
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For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
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Standards volume information, refer to the standard’s Document Summary page on The boldface numbers in parentheses refer to a list of references at the end of
the ASTM website. this test method.
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E1855–05
4.2 The measured
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