EN 62373:2006

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET)

Stabilitätsprüfung unter Temperatur-Spannungs-Beanspruchung für Feldeffekttransistoren mit Metalloxid-Halbleiter (MOSFET)

Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)

Fournit une procédure d'essai pour la stabilité de température en polarisation (essai BT) des MOSFET (transistor à effet de champ métaloxyde-semiconducteurs)

Preskušanje ravnotežne temperaturne stabilnosti za kovinsko-oksidne polprevodniške tranzistorje na poljski efekt (MOSFET) (IEC 62373:2006)

General Information

• Status: Published
• Publication Date: 09-Aug-2006
• Withdrawal Date: 31-Jul-2009
• ICS: 31.080 - Semiconductor devices
• Technical Committee: CLC/SR 47 - Semiconductor devices
• Drafting Committee: IEC/TC 47 - IEC_TC_47
• Parallel Committee: IEC/TC 47 - IEC_TC_47
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 10-Aug-2006
• Completion Date: 10-Aug-2006
• Ref Project: SIST EN 62373:2007 - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Standards Content (Sample)

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EUROPEAN STANDARD
EN 62373

NORME EUROPÉENNE
August 2006
EUROPÄISCHE NORM

ICS 31.080


English version


Bias-temperature stability test for
metal-oxide, semiconductor, field-effect transistors
(MOSFET)
(IEC 62373:2006)


Essai de stabilité de température en Stabilitätsprüfung unter
polarisation pour transistors à effet de Temperatur-Spannungs-Beanspruchung
champ métal-oxyde-semiconducteur für Feldeffekttransistoren mit
(MOSFET) Metalloxid-Halbleiter (MOSFET)
(CEI 62373:2006) (IEC 62373:2006)




This European Standard was approved by CENELEC on 2006-08-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,
Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels


© 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62373:2006 E

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EN 62373:2006 - 2 -
Foreword
The text of document 47/1862/FDIS, future edition 1 of IEC 62373, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62373 on 2006-08-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2007-05-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2009-08-01
__________
Endorsement notice
The text of the International Standard IEC 62373:2006 was approved by CENELEC as a European
Standard without any modification.
__________

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NORME CEI
INTERNATIONALE
IEC



62373
INTERNATIONAL


Première édition
STANDARD

First edition

2006-07


Essai de stabilité de température en polarisation
pour transistors à effet de champ métal-oxyde-
semiconducteur (MOSFET)
Bias-temperature stability test for metal-oxide,
semiconductor, field-effect transistors (MOSFET)

 IEC 2006 Droits de reproduction réservés  Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: [phone] Telefax: [phone] E-mail: [e-mail] Web: www.iec.ch
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Commission Electrotechnique Internationale
International Electrotechnical Commission
МеждународнаяЭлектротехническаяКомиссия
Pour prix, voir catalogue en vigueur
For price, see current catalogue

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62373  IEC:2006 – 3 –
CONTENTS
FOREWORD.5
INTRODUCTION.9

1 Scope.
...