SIST EN 62373:2007

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET)

Stabilitätsprüfung unter Temperatur-Spannungs-Beanspruchung für Feldeffekttransistoren mit Metalloxid-Halbleiter (MOSFET)

Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)

Fournit une procédure d'essai pour la stabilité de température en polarisation (essai BT) des MOSFET (transistor à effet de champ métaloxyde-semiconducteurs)

Preskušanje ravnotežne temperaturne stabilnosti za kovinsko-oksidne polprevodniške tranzistorje na poljski efekt (MOSFET) (IEC 62373:2006)

General Information

• Status: Published
• Publication Date: 31-Dec-2006
• ICS: 31.080.30 - Transistors
• Technical Committee: SS EIT - Technical Board for the electrotechnical, information technology and telecommunications fields
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 01-Jan-2007
• Due Date: 01-Jan-2007
• Completion Date: 01-Jan-2007
• Ref Project: EN 62373:2006 - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Overview

EN 62373:2006 (adoption of IEC 62373:2006) defines a standardized bias‑temperature (BT) stability test for metal‑oxide semiconductor field‑effect transistors (MOSFETs). Published by CLC/CENELEC, the standard provides test procedures, measurement definitions and handling requirements to evaluate MOSFET degradation under sustained bias and elevated temperature. It is intended for device‑level and wafer‑level reliability assessment of MOSFETs used in power and logic applications.

Key topics and technical requirements

• Purpose: Measure BT‑induced shifts in electrical parameters (degradation due to mobile ions, charge trapping, interface traps, carrier injection into oxide).
• Measured parameters (examples defined in the standard):
  • Constant‑current threshold voltage (Vth‑ci) - gate voltage where IDS = 0.1 µA/µm × W (W = gate width in µm).
  • Extrapolated threshold voltage (Vth‑ext) - from I–V curve extrapolation in linear region.
  • Saturated and linear drain currents (IDS,sat, ID,lin), drain leakage (ID,leak), maximum transconductance (Gm,max), gate leakage (Ig), breakdown voltage (VBDSS), substrate leakage (Isub).
• Test equipment & handling:
  • High‑temperature oven or wafer prober with hot chuck for wafer‑level reliability (WLR) tests.
  • DC measurement instruments capable of extracting the specified parameters.
  • ESD protection and handling procedures (wrist straps, ESD protection circuits recommended on gate).
• Test samples:
  • Use a minimum channel length for the targeted technology; recommended gate widths typically 3 µm to 20 µm unless otherwise required.
  • Preferably four separate external terminals (gate, source, drain, substrate).
• Stress conditions & procedure:
  • Apply elevated temperature and gate bias (positive for N‑channel, negative for P‑channel) for defined durations.
  • Include initial/read‑point/final measurements and optional pre‑stress to optimize stress conditions.
  • Oxide electric field expressed as Eox = Vox / tox (tox determined by documented method).

Applications and who uses it

• Semiconductor manufacturers conducting reliability qualification for MOSFET process technologies.
• Device and test engineers performing lifetime projection, failure analysis or design validation.
• Quality assurance teams verifying packaging effects (including ESD protection) and wafer‑level reliability (WLR).
• Suppliers and integrators who need standardized test results for component selection in power electronics, automotive, and industrial systems.

Related standards

• IEC 62373:2006 - original international standard (text adopted unchanged as EN 62373:2006).
• Standards and guidelines for ESD handling and electrical test instrumentation (referenced normatively within EN/IEC publications).

Keywords: EN 62373:2006, bias‑temperature stability test, MOSFET reliability, BT test, IEC 62373, wafer level reliability, threshold voltage, gate leakage, oxide electric field.

Standards Content (Sample)

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EUROPEAN STANDARD
EN 62373
NORME EUROPÉENNE
August 2006
EUROPÄISCHE NORM
ICS 31.080
English version
Bias-temperature stability test for
metal-oxide, semiconductor, field-effect transistors
(MOSFET)
(IEC 62373:2006)
Essai de stabilité de température en Stabilitätsprüfung unter
polarisation pour transistors à effet de Temperatur-Spannungs-Beanspruchung
champ métal-oxyde-semiconducteur für Feldeffekttransistoren mit
(MOSFET) Metalloxid-Halbleiter (MOSFET)
(CEI 62373:2006) (IEC 62373:2006)

This European Standard was approved by CENELEC on 2006-08-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,
Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels

© 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62373:2006 E
Foreword
The text of document 47/1862/FDIS, future edition 1 of IEC 62373, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62373 on 2006-08-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2007-05-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2009-08-01
__________
Endorsement notice
The text of the International Standard IEC 62373:2006 was approved by CENELEC as a European
Standard without any modification.
__________
NORME CEI
INTERNATIONALE
IEC
INTERNATIONAL
Première édition
STANDARD
First edition
2006-07
Essai de stabilité de température en polarisation
pour transistors à effet de champ métal-oxyde-
semiconducteur (MOSFET)
Bias-temperature stability test for metal-oxide,
semiconductor, field-effect transistors (MOSFET)

 IEC 2006 Droits de reproduction réservés  Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
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International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: [phone] Telefax: [phone] E-mail: [e-mail] Web: www.iec.ch
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Pour prix, voir catalogue en vigueur
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62373  IEC:2006 – 3 –
CONTENTS
FOREWORD.5
INTRODUCTION.9

1 Scope.11
2 Terms and definitions .11
3 Test equipment.15
3.1 Equipment.15
3.2 Requirement for handling .15
4 Test sample.17
4.1 Sample.17
4.2 Packaging .17
4.3 ESD protection circuit.17
5 Procedure .19
5.1 Initial measurement and read point measurement.19
5.2 Test.19
5.3 Notes for field MOSFET .21
5.4 Judgment .23

Annex A (informative) Wafer level reliability test (WLR test).25

Bibliography.27

Figure 1 – V -I curve to explain V .13
GS DS th-ex
Figure 2 – Connection between MOSFET electrodes and external terminals .17
Figure 3 – Example of ESD protection circuit .19
Figure 4 – MOSFET BT test circuit (Nch) .21

62373  IEC:2006 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE,
SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)

FOREWORD
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International Standard IEC 62373 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/1862/FDIS 47/1875/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

62373  IEC:2006 – 7 –
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
62373  IEC:2006 – 9 –
INTRODUCTION
Under the stress of high temperature, and when high gate-source voltage is applied over a
long period of time, MOSFET degrades; saturation current decreases and the absolute value
of threshold voltage increases.
Known causes of degradation include mobile ion contamination, charge damage and the
creation of interface traps at SiO /Si interface or fixed charge by the carrier flow into the oxide.
62373  IEC:2006 – 11 –
BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE,
SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)

1 Scope
This International Standard provides a test procedure for a bias-temperature (BT) stability test
of metal-oxide semiconductor, field-eff
...