IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

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IEC 60747-5-4:2022(E) specifies the terminology, the essential ratings and characteristics as well as the measuring methods of semiconductor lasers.
This edition includes the following significant technical changes with respect to the previous edition:  
References for the terms and definitions related to the lighting area, IEC 60050-845, are revised based on IEC 60050-845:2020;
Emission angle is changed to radiation angle in 3.3.2;
Definitions of rise time and fall time in 3.4.1 are revised based on the publication IEC 60050-521:2002;
Spectral linewidth is added to Table 1 in Clause 4;
Conditions for carrier-to-noise ratio of Table 1 in Clause 4 is amended.
Error in the equation for carrier-to-noise ratio in 5.2.2 is corrected;
Precaution against the equipment used for carrier-to-noise ratio measurement is added in 5.2.2;
Explanation for the measurement method of the small signal cut-off frequency in 5.3.2 of the first edition is deleted because it has been defined in the latest version of ISO 11554;
Reference document for the lifetime in 5.4 is amended;
Precaution against the measuring arrangement used for the half-intensity width and 1/e2-intensity is added in 5.5.3;
Reference tables in Annex A, Annex B and Annex C are revised by following the latest version of ISO publications.

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IEC 60749-10:2022 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.
This edition cancels and replaces the first edition published in 2002. This edition includes the following significant technical changes with respect to the previous edition:  
covers both unattached components and components attached to printed wiring boards;
tolerance limits modified for peak acceleration and pulse duration;
mathematical formulae added for velocity change and equivalent drop height.

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IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

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IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

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IEC 60749-28:2022 is available as IEC 60749-28:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. This edition includes the following significant technical changes with respect to the previous edition: - a new subclause and annex relating to the problems associated with CDM testing of integrated circuits and discrete semiconductors in very small packages; - changes to clarify cleaning of devices and testers.

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In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices [1]
b) GaN integrated power solutions
c) the above in wafer and package levels
Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications.
The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.

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IEC 60747-5-14:2022(E) specifies the measuring method of the surface temperature of single LED die or package, based on the thermoreflectance (TR) method. TR is the effect that the reflectance of light changes with the temperature of a substance. This part measures relative change in the reflectance of light from a metal film deposited nearby on the metallurgical pn junction as the relative change in the LED junction temperature. The surface temperature can be approximated as the junction temperature when the thermal resistance effect between the metal surface and the pn junction is negligibly small.

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IEC 60749-28:2022 is available as IEC 60749-28:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. This edition includes the following significant technical changes with respect to the previous edition:
- a new subclause and annex relating to the problems associated with CDM testing of integrated circuits and discrete semiconductors in very small packages;
- changes to clarify cleaning of devices and testers.

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IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices;
b) GaN integrated power solutions;
c) the above in wafer and package levels.
The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.

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This International Standard defines type, production and optional tests on thyristor valves used in thyristor controlled reactors (TCR), thyristor switched reactors (TSR) and thyristor switched capacitors (TSC) forming part of static VAR compensators (SVC) for power system applications. The requirements of the standard apply both to single valve units (one phase) and to multiple valve units (several phases).
Clauses 4 to 7 detail the type tests, i.e. tests which are carried out to verify that the valve design meets the requirements specified. Clause 8 covers the production tests, i.e. tests which are carried out to verify proper manufacturing. Clauses 9 and 10 detail optional tests, i.e. tests additional to the type and production tests.

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No scope available

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This part of IEC 60749 details the procedures for the measurement of the characteristic
properties of moisture diffusivity and water solubility in organic materials used in the
packaging of semiconductor components.
These two material properties are important parameters for the effective reliability
performance of plastic packaged semiconductors after exposure to moisture and being
subjected to high-temperature solder reflow.

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2021-05-26: This A11 includes the updated Annexes ZA & ZZ, it will allow citation of EN IEC 62031:2020, published without the link to LVD directive

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IEC 60749-39:2021 is available as IEC 60749-39:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-39:2021 details the procedures for the measurement of the characteristic properties of moisture diffusivity and water solubility in organic materials used in the packaging of semiconductor components. These two material properties are important parameters for the effective reliability performance of plastic packaged semiconductors after exposure to moisture and being subjected to high-temperature solder reflow. This edition includes the following significant technical changes with respect to the previous edition:
- updated procedure for "dry weight" determination.

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This part of IEC 63244 provides general requirements and specifications of the semiconductor
devices for the performance and reliability evaluations of wireless power transfer and charging
systems. For the performance evaluations, this part covers various characterization parameters
and symbols, general system diagrams, and test setups and test conditions.
This document also describes classifications of the wireless power transfer technologies.

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IEC 62830-8:2021(E) specifies terms, definitions, symbols, test, and evaluation methods used to determine the performance characteristics of flexible and stretchable supercapacitor for practical use in low power electronics such as energy storage devices for energy harvesting, flexible and stretchable electronics, low-power devices, IoT applications, etc. This document is applicable to all the flexible and stretchable supercapacitor for consumers and manufacturers, without any limitations of device technology and size.

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This part of IEC 63287 gives guidelines for reliability qualification plans of semiconductor
integrated circuit products. This document is not intended for military- and space-related
applications.
NOTE 1 The manufacturer can use flexible sample sizes to reduce cost and maintain reasonable reliability by this
guideline adaptation based on EDR-4708, AEC Q100, JESD47 or other relevant document can also be applicable if
it is specified.
NOTE 2 The Weibull distribution method used in this document is one of several methods to calculate the
appropriate sample size and test conditions of a given reliability project

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This part of IEC 62435 specifies storage practices encompassing silicon and semiconductor
device building blocks of all types that are integrated together to into products in the form of
either packages or boards that can be stored as fully assembled units or partial assemblies.
Special attention is given to memories as components and assemblies although methods also
apply to heterogeneous components. Guidelines and requirements for customer-supplier
interaction are provided to manage the complexity.
NOTE In IEC 62435 (all parts), the term "components" is used interchangeably with dice, wafers, passives and
packaged devices.

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IEC TR 60747-5-12:2021(E) discusses the terminology and the measuring methods of optoelectronic efficiencies of single light emitting diode (LED) chip or package without phosphor. White LEDs for lighting applications are out of the scope of this part.
This technical report provides guidance on
- terminology of optoelectronic efficiencies of single LED chip or package without phosphor, such as the power efficiency (PE), the external quantum efficiency (EQE), the voltage efficiency (VE), the light extraction efficiency (LEE), the internal quantum efficiency (IQE), the injection efficiency (IE), and the radiative efficiency (RE);
- test methods of optoelectronic efficiencies of the PE, the EQE, the VE, the LEE, and the IQE;
- review of various IQE measurement methods reported so far in view of accuracy and practical applicability;
- the measuring method of the LED IQE based on the temperature-dependent electroluminescence (TDEL);
- the measuring method of the LED IQE based on the room-temperature reference-point method (RTRM);
- the measuring method of the radiative and nonradiative currents of an LED;
- the relationship between the IQE and the VE, which leads to introduction of a new LED efficiency, the active efficiency (AE) as AE = VE × IQE.

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IEC 61954:2021 is available as IEC 61954:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 61954:2021 defines type, production and optional tests on thyristor valves used in thyristor controlled reactors (TCR), thyristor switched reactors (TSR) and thyristor switched capacitors (TSC) forming part of static VAR compensators (SVC) for power system applications. The requirements of the document apply both to single valve units (one phase) and to multiple valve units (several phases). Clauses 4 to 7 detail the type tests, i.e. tests which are carried out to verify that the valve design meets the requirements specified. Clause 8 covers the production tests, i.e. tests which are carried out to verify proper manufacturing. Clauses 9 and 10 detail optional tests, i.e. tests additional to the type and production tests. This edition includes the following significant technical changes with respect to the previous edition: important clarifications were made in 4.4.1.2, 5.1.2.2, 5.1.3.2, 5.2.3.2, 6.1.2.2, 6.1.2.4, 6.1.3.2, 6.2.2.2, 6.2.2.4, 6.3.2.2 and 9.3.2.

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IEC 63244-1:2021 provides general requirements and specifications of the semiconductor devices for the performance and reliability evaluations of wireless power transfer and charging systems. For the performance evaluations, this part covers various characterization parameters and symbols, general system diagrams, and test setups and test conditions.
This document also describes classifications of the wireless power transfer technologies.

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IEC 62047-40:2021(E) specifies the test conditions and methods of micro-electromechanical inertial shock switch threshold. This document applies to normally open micro-electromechanical inertial shock switch.

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IEC 63287-1:2021 gives guidelines for reliability qualification plans of semiconductor integrated circuit products. This document is not intended for military- and space-related applications.
NOTE 1 The manufacturer can use flexible sample sizes to reduce cost and maintain reasonable reliability by this guideline adaptation based on EDR-4708, AEC Q100, JESD47 or other relevant document can also be applicable if it is specified.
NOTE 2 The Weibull distribution method used in this document is one of several methods to calculate the appropriate sample size and test conditions of a given reliability project.
This first edition of IEC 63287-1 cancels and replaces the first edition of IEC 60749-43 published in 2017. This edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous edition:  
the document has been renamed and renumbered to distinguish it from the IEC 60749 (all parts);
a new section concerning the concept of "family" has been added with appropriate renumbering of the existing text.

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IEC 62899-503-3:2021(E) specifies a measuring method of contact resistance for printed thin film transistors (TFTs) by the transfer length method (TLM). The method requires the fabrication of a test element group (TEG) with varying channel length (L) between source and drain electrodes. The method is intended for quality assessment of TFT electrode contacts and is suited for determining whether the contact resistance lies within a desired range.

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IEC 60747-5-6:2021 is available as IEC 60747-5-6:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60747-5-6:2021 specifies the terminology, the essential ratings and characteristics, the measuring methods and the quality evaluations of light emitting diodes (LEDs) for general industrial applications such as signals, controllers, sensors, etc.
LEDs for lighting applications are out of the scope of this part of IEC 60747.
LEDs are classified as follows:
- LED package;
- LED flat illuminator;
- LED numeric display and alpha-numeric display;
- LED dot-matrix display;
- infrared-emitting diode (IR LED);
- ultraviolet-emitting diode (UV LED).
LEDs with a heat spreader or having a terminal geometry that performs the function of a heat spreader are within the scope of this part of IEC 60747.
An integration of LEDs and controlgears, integrated LED modules, semi-integrated LED modules, integrated LED lamps or semi-integrated LED lamps, are out of the scope of this part of IEC 60747. This edition includes the following significant technical changes with respect to the previous edition:
- ultraviolet-emitting diodes (UV LED) and their related technical contents were added;
- power efficiency (ηPE) as part of electrical and optical characteristics were added;
- new measuring methods related to thermal resistance were added;
- hydrogen sulphide corrosion test was added to quality evaluation;
- some standards were added to the bibliography.

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IEC 62047-38:2021(E) specifies a test method for measuring the adhesion strength of metal powder paste in the electrical interconnection between micro-electromechanical systems (MEMS) and a circuit board. The typical examples of metal powder paste are anisotropic conductive paste, solder paste, and nanoscale metallic inks. This testing method is valid for metal powder diameters from 10 µm and 500 µm.
In this test method, a uniaxial compression load is applied to metal powder paste using a glass lens simulating an actual MEMS device; then, the adhesion strength is measured by retracting the lens. This test method is proper when the adhesion strength should be analyzed by considering the actual contact area between the MEMS device and metal powder particles.

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IEC 60747-5-13:2021 provides the accelerated test method to assess effects of the tarnishing of silver and silver alloys used for LED packages due to hydrogen sulphide. Particularly, this test method is intended to give information on silver and silver alloy tarnishing effects to the luminous/radiant flux maintenance of LED packages. Additionally, this test method can give information on electric performances of LED packages due to corrosion of silver and silver alloys.
The object of this test is to determine the influence of atmospheres containing hydrogen sulphide on parts of LED packages made of: silver or silver alloy; silver or silver alloy protected with another layer; other metals covered with silver or silver alloy.
Testing other degradations that are susceptible to affect luminous/radiant flux maintenance and/or electric performance (e.g. degradation of copper or silicone parts) is not the object of this test. This test might not be suitable as a general corrosion test, i.e. it might not predict the behaviour of flux and/or electric characteristics and connections in industrial atmospheres. This document is applicable to LED packages for lighting applications only if referenced by an IEC SC 34A document.

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IEC 62047-41:2021 specifies the terminology, essential ratings and characteristics, and measuring methods of RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) circulators and isolators.

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IEC TS 60747-19-2:2021 provides a guideline of indication of specifications of a low-power sensor being a device or a module allowing autonomous power supply operation, which contributes to the low-power design of a smart sensing unit. Here, the smart sensing unit comprises a smart sensor, a terminal module, and a power supply, which can send output data of the smart sensor to the outside. This part also provides a guideline of indication of specifications of the power supply to drive the smart sensor(s) in the smart sensing unit. Based on these, the three components of the smart sensing unit can be easily selected and combined from the point-of-view of newly designed, low-power, smart sensing units.

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IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

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IEC 60747-14-11:2021(E) defines the terms, definitions, configuration, and test methods can be used to evaluate and determine the performance characteristics of surface acoustic wave-based semiconductor sensors integrated with ultraviolet, illuminance, and temperature sensors. The measurement methods are for DC characteristics and RF characteristics, and the measurement method for RF characteristics includes a direct mode and differential amplifier mode based on feedback oscillation. This document excludes devices dealt with by TC 49: piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection.

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IEC 62830-7:2021 defines terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of linear sliding mode triboelectric energy harvesting devices for practical use. This document is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any limitations on device technology and size.

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IEC 62435-7:2020 on long-term storage applies to micro-electromechanical devices (MEMS) in long-term storage that can be used as part of obsolescence mitigation strategy. Long-term storage refers to a duration that may be more than 12 months for products scheduled for storage. Philosophy, good working practice, and general means to facilitate the successful long-term storage of electronic components are also addressed.

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IEC 62830-5:2021 specifies the test method for measuring generated electric power from flexible thermoelectric devices under bending conditions. This document provides terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance of flexible thermoelectric devices. This document also describes the test conditions such as temperature, temperature difference, contact conditions, insulation and bending radius of flexible thermoelectric devices. This document is applicable to flexible energy harvesting devices for flexible semiconductor devices.

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This part of IEC 60747 specifies the terminology, essential ratings, characteristics, safety test
and the measuring methods of magnetic coupler and capacitive coupler.
It specifies the principles and requirements of insulation and isolation characteristics for
magnetic and capacitive couplers for basic insulation and reinforced insulation.

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This part of IEC 60749 provides a means of assessing the resistance to soldering heat of
semiconductors packaged as plastic encapsulated surface mount devices (SMDs). This test is
destructive.

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The contents of the corrigendum of September 2020 have been included in this copy.

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This part of IEC 60749 establishes a standard procedure for determining the preconditioning
of non-hermetic surface mount devices (SMDs) prior to reliability testing.
The test method defines the preconditioning flow for non-hermetic solid-state SMDs
representative of a typical industry multiple solder reflow operation.
These SMDs are subjected to the appropriate preconditioning sequence described in this
document prior to being submitted to specific in-house reliability testing (qualification and/or
reliability monitoring) in order to evaluate long term reliability (impacted by soldering stress).
NOTE 1 Correlation of moisture-induced stress sensitivity conditions (or moisture sensitivity levels (MSL)) in
accordance with IEC 60749-20 and this document and the actual reflow conditions used are dependent upon
identical temperature measurement by both the semiconductor manufacturer and the board assembler. Therefore,
the temperature at the top of the package on the hottest moisture sensitive SMD during assembly is monitored to
ensure that it does not exceed the temperature at which the components are evaluated.
NOTE 2 For the purpose of this document, SMD is restricted to include only plastic-encapsulated SMDs and other
packages made with moisture-permeable materials.

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This part of IEC 60749 describes a test used to determine whether encapsulated solid state
devices used for through-hole mounting can withstand the effects of the temperature to which
they are subjected during soldering of their leads by using wave soldering.
In order to establish a standard test procedure for the most reproducible methods, the solder
dip method is used because of its more controllable conditions. This procedure determines
whether devices are capable of withstanding the soldering temperature encountered in printed
wiring board assembly operations, without degrading their electrical characteristics or internal
connections.
This test is destructive and may be used for qualification, lot acceptance and as a product
monitor.
The heat is conducted through the leads into the device package from solder heat at the
reverse side of the board. This procedure does not simulate wave soldering or reflow heat
exposure on the same side of the board as the package body.

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This part of IEC 60747 specifies the terminology, essential ratings, characteristics, safety
tests, as well as the measuring methods for photocouplers.
NOTE The term "optocoupler" can also be used instead of "photocoupler".

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IEC 60747-17:2020 specifies the terminology, essential ratings, characteristics, safety test and the measuring methods of magnetic coupler and capacitive coupler.
It specifies the principles and requirements of insulation and isolation characteristics for magnetic and capacitive couplers for basic insulation and reinforced insulation.
This first edition cancels and replaces IEC PAS 60747-17:2011. This edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to IEC PAS 60747-17:2011:
a) introduced lifetime safety factors for improved life time consideration, to comply with widely recognized aging mechanisms of silicone dioxide (TDDB) and thin film polymer isolation layers;
b) significantly improved "end of life testing" paragraph and statistical life time consideration by adding detailed description on process, safety factors, methods of generating data points and respective lifetime interpolations as well as being specific on minimum amount of samples required;
c) introduced concept of certification by similarity, including Annex A, giving guidance on qualification considerations and required certification process;
d) alternative pulse shape allowed for surge pulse testing, to avoid issues due to surge tester availability;
e) various improvements throughout the standard: definitions, for example type of coupler have been improved, introduction of surge impulse VIMP rating, usage of glass transition temperature, pre-conditioning have been redefined for improved usability and better compatibility with today’s design and functionality of couplers, available mold compounds, etc.
The contents of the corrigendum of January 2021 have been included in this copy.

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This part of the IEC 62435 series on long-term storage is applied to passive electronic devices
in long-term storage that can be used as part of obsolescence mitigation strategy. Longterm
storage refers to a duration that can be more than 12 months for product scheduled for
storage. Storage typically begins when components are packed at the originating supplier
where the pack date or date code are assigned to the product. It is the responsibility of the
distributor and the customer to control and manage the aging inventory upon receipt of the
dated product. Alternatively, a supplier-customer agreement can be established to manage
the aging inventory. Philosophy, good working practice, and general means to facilitate the
successful long-term storage of electronic components are also addressed.

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This part of IEC 60749 specifies the procedural requirements for performing valid endurance,
retention and cross-temperature tests based on a qualification specification. Endurance and
retention qualification specifications (for cycle counts, durations, temperatures, and sample
sizes) are specified in JESD47 or are developed using knowledge-based methods such as in
JESD94.

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This part of IEC 61643 specifies standard test circuits and methods for thyristor surge
suppressor (TSS) components. These surge protective components, SPCs, are specially
formulated thyristors designed to limit overvoltages and divert surge currents by clamping and
switching actions. These SPCs are used in the construction of surge protective devices
(SPDs) and equipment used in Information & Communications Technologies (ICT) networks
with voltages up to AC 1 000 V and DC 1 500 V. This document is applicable to gated or nongated
TSS components with third quadrant (-v and –i) characteristics of blocking, conducting
or switching.
This document contains information on
• terminology;
• letter symbols;
• essential ratings and characteristics;
• rating verification and characteristic measurement;
This document does not apply to the conventional three-terminal thyristors as covered by
IEC 60747-6.

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IEC 60749-20:2020 is available as IEC 60749-20:2020 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-20:2020 provides a means of assessing the resistance to soldering heat of semiconductors packaged as plastic encapsulated surface mount devices (SMDs). This test is destructive. This edition includes the following significant technical changes with respect to the previous edition:
- incorporation of a technical corrigendum to IEC 60749-20:2008 (second edition );
- inclusion of new Clause 3;
- inclusion of explanatory notes.

  • Standard
    55 pages
    English and French language
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IEC 60749-30:2020 is available as IEC 60749-30:2020 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.
IEC 60749-30:2020 establishes a standard procedure for determining the preconditioning of non-hermetic surface mount devices (SMDs) prior to reliability testing.
The test method defines the preconditioning flow for non-hermetic solid-state SMDs representative of a typical industry multiple solder reflow operation.
These SMDs are subjected to the appropriate preconditioning sequence described in this document prior to being submitted to specific in-house reliability testing (qualification and/or reliability monitoring) in order to evaluate long term reliability (impacted by soldering stress). This edition includes the following significant technical changes with respect to the previous edition:
- inclusion of new Clause 3;
- expansion of 6.7 on solder reflow;
- inclusion of explanatory notes and clarifications.

  • Standard
    26 pages
    English and French language
    sale 15% off