IEC 62899-503-1:2020
(Main)Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor
Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor
IEC 62899-503-1:2020(E) specifies a test method for displacement current measurement (DCM) for printed thin film transistors (TFTs) or organic thin film transistors (OTFTs).
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IEC 62899-503-1 ®
Edition 1.0 2020-05
INTERNATIONAL
STANDARD
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inside
Printed electronics –
Part 503-1: Quality assessment – Test method of displacement current
measurement for printed thin-film transistor
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IEC 62899-503-1 ®
Edition 1.0 2020-05
INTERNATIONAL
STANDARD
colour
inside
Printed electronics –
Part 503-1: Quality assessment – Test method of displacement current
measurement for printed thin-film transistor
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 29.045; 31.080.30 ISBN 978-2-8322-8378-3
– 2 – IEC 62899-503-1:2020 © IEC 2020
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Abbreviated terms . 7
5 Symbols and units . 7
6 Measuring method of DCM . 8
6.1 Guidelines on measurements of printed TFT channel properties . 8
6.2 Procedure for DCM . 8
6.2.1 Measuring apparatus . 8
6.2.2 Measuring procedure . 8
7 Report . 10
7.1 Experimental conditions . 10
7.2 Appropriate data format . 10
Annex A (informative) Experimental results . 12
A.1 Charge trapping measurement method . 12
A.2 Channel capacitance measurement method . 13
Bibliography . 15
Figure 1 – Example of structure (left) and schema (right) of a measuring device . 8
Figure 2 – Plots of the printed TFT's U , I , I at U = −20V with respect to time . 9
GS s D DS
Figure 3 – Frequency dependence of DCM . 10
Figure A.1 – Plot of DCM at U = 0 V . 13
DS
Figure A.2 – Division of regions according to carrier injection . 14
Table 1 – List of symbols . 7
Table 2 – Environmental factors . 11
Table 3 – Measured properties of the TFT . 11
Table A.1 – Obtained trap charge from four cycles (accumulated) . 13
INTERNATIONAL ELECTROTECHNICAL COMMISSION
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PRINTED ELECTRONICS –
Part 503-1: Quality assessment –
Test method of displacement current
measurement for printed thin-film transistor
FOREWORD
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International Standard IEC 62899-503-1 has been prepared by IEC technical committee
119: Printed Electronics.
The text of this International Standard is based on the following documents:
FDIS Report on voting
119/303/FDIS 119/307/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
– 4 – IEC 62899-503-1:2020 © IEC 2020
A list of all parts in the IEC 62899 series, published under the general title Printed electronics,
can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
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INTRODUCTION
There has been a need for a method to measure and evaluate performance and reliability that
is appropriate for printed thin-film transistors (TFTs). In the case of printed TFTs, there is
much larger parasitic capacitance than dielectric capacitance in the channel. Accordingly,
there has been a need for a method to measure and evaluate the properties for printed TFTs.
Carrier behavior is one such property, and mobility and threshold voltage (V ) for TFTs are
th
other properties. In the case of inorganic TFTs, for example complementary metal-oxide
semiconductor (CMOS) TFTs, carriers are induced by the strong inversion at the
semiconductor/dielectric interface. But in the case of organic or printed TFTs, carrier
generation takes place in the accumulation mode. The total number of carriers in the organic
semiconductor layer can often be insufficient to enrich the carrier concentration at the channel.
There exists a carrier injection. The carrier injection occurs at the interface of the organic
semiconductors' source/drain electrodes. There are three methods to investigate the carrier
injection property, that is, Kelvin probe microscopy, four-terminal measurement, and
displacement current measurement (DCM). Both Kelvin probe microscopy and four-terminal
measurement are indirect methods, but DCM is a direct method to detect charge motion in
semiconductors, molecular thin films, and nanoparticles. In this document, the DCM-based
channel charge trapping and channel capacitance measurement method is proposed as a
measuring method for the carrier properties of organic or printed TFTs.
– 6 – IEC 62899-503-1:2020 © IEC 2020
PRINTED ELECTRONICS –
Part 503-1: Quality assessment –
Test method of displacement current
measurement for printed thin-film transistor
1 Scope
This part of IEC 62899 specifies a test method for displacement current measurement (DCM)
for printed thin-film transistors (TFTs) or organic thin-film transistors (OTFTs).
2 Normative references
The following documents are referred to in the text in such a way that some or all of their
content constitutes requirements of this document. For dated references, only the edition
cited applies. For undated references, the latest edition of the referenced document (including
any amendments) applies.
ISO 291, Plastics – Standard atmospheres for conditioning and testing
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
printed thin-film transistor
printed TFT
device of a field effect transistor whose components, that is, source-drain electrodes,
semiconductor, gate electrode, and insulator, are formed by any kind of printing technologies
3.2
saturation region
operating region of a TFT in which, when the drain volt
...
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