SIST EN 60749-6:2017

Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature (IEC 60749-6:2017)

The purpose of this part of IEC 60749 is to test and determine the effect on all solid state
electronic devices of storage at elevated temperature without electrical stress applied. This
test is typically used to determine the effects of time and temperature, under storage
conditions, for thermally activated failure methods and time-to-failure of solid state electronic
devices, including non-volatile memory devices (data-retention failure mechanisms). This test
is considered non-destructive but should preferably be used for device qualification. If such
devices are used for delivery, the effects of this highly accelerated stress test will need to be
evaluated.
Thermally activated failure mechanisms are modelled using the Arrhenius equation for
acceleration, and guidance on the selection of test temperatures and durations can be found
in IEC 60749-43.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 6: Lagerung bei hoher Temperatur (IEC 60749-6:2017)

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 6: Stockage à haute température (IEC 60749-6:2017)

L’IEC 60749-6:2017 a pour objet de soumettre à essai et de déterminer, sur tous les dispositifs électroniques à semiconducteurs, l’effet du stockage à température élevée sans application de contrainte électrique. Cet essai est typiquement utilisé pour déterminer les effets de la durée d’exposition et de la température, dans des conditions de stockage, sur les modes de défaillance déclenchés par la chaleur et la durée de fonctionnement avant défaillance des dispositifs électroniques à semiconducteurs, comprenant les dispositifs à mémoire non volatile (mécanismes de défaillance liés à la conservation de données). Cet essai est considéré comme non destructif mais il convient de le privilégier pour la qualification des dispositifs. Si de tels dispositifs sont livrés, il est nécessaire d’évaluer les effets de cet essai de contrainte fortement accéléré.
Les modes de défaillance déclenchés par la chaleur sont modélisés à partir de l’équation d’Arrhenius pour l’accélération, et des recommandations concernant le choix des températures d’essai et des durées d’exposition peuvent être consultées dans l’IEC 60749‑43.
Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:
a) conditions d’essai supplémentaires;
b) clarification de l’applicabilité des conditions d’essai.

Polprevodniški elementii - Mehanske in klimatske preskusne metode - 6. del: Shranjevanje pri visoki temperaturi (IEC 60749-6:2017)

Namen tega dela standarda IEC 60749 je preskušanje in ugotavljanje učinka na vse elektronske naprave za shranjevanje v trdnem stanju pri povišani temperaturi brez električne obremenitve. Ta preskus se običajno uporablja za ugotavljanje učinkov časa in temperature (v pogojih shranjevanja) za metode s toplotno aktiviranimi okvarami in merjenjem časa do trenutka okvare elektronskih naprav v trdnem stanju, vključno z nehlapnimi pomnilniškimi napravami (mehanizmi okvare z zadržanjem podatkov). Ta preskus se obravnava kot neporušitveni, vendar ga je treba pri kvalifikaciji naprav uporabljati prednostno. Če se tovrstne naprave uporabljajo za dostavo, je treba ovrednotiti učinke tega preskusa z močno pospešenim obremenjevanjem.
Mehanizmi za toplotno aktivirane okvare so modelirani z Arrheniusovo enačbo za pospeševanje, smernice glede izbire preskusnih temperatur in trajanj pa so na voljo v standardu IEC 60749-43.

General Information

• Status: Published
• Publication Date: 08-Aug-2017
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 21-Jun-2017
• Due Date: 26-Aug-2017
• Completion Date: 09-Aug-2017
• Ref Project: EN 60749-6:2017 - Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

Relations

• Replaces: SIST EN 60749-6:2004 - Semiconductor devices - Mechanical and climatic test methods -- Part 6: Storage at high temperature
• Effective Date: 20-Jun-2017

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN 60749-6:2017
01-september-2017
1DGRPHãþD
SIST EN 60749-6:2004
Polprevodniški elementii - Mehanske in klimatske preskusne metode - 6. del:
Shranjevanje pri visoki temperaturi (IEC 60749-6:2017)
Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high
temperature (IEC 60749-6:2017)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 6: Lagerung
bei hoher Temperatur (IEC 60749-6:2017)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 6:
Stockage à haute température (IEC 60749-6:2017)
Ta slovenski standard je istoveten z: EN 60749-6:2017
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 60749-6:2017 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 60749-6:2017

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SIST EN 60749-6:2017


EUROPEAN STANDARD EN 60749-6

NORME EUROPÉENNE

EUROPÄISCHE NORM
June 2017
ICS 31.080.01 Supersedes EN 60749-6:2002
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 6: Storage at high temperature
(IEC 60749-6:2017)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 6: Stockage à haute Prüfverfahren - Teil 6: Lagerung bei hoher Temperatur
température (IEC 60749-6:2017)
(IEC 60749-6:2017)
This European Standard was approved by CENELEC on 2017-04-07. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,
Switzerland, Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2017 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN 60749-6:2017 E

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SIST EN 60749-6:2017
EN 60749-6:2017
European foreword
The text of document 47/2347/FDIS, future edition 2 of IEC 60749-6, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN 60749-6:2017.
The following dates are fixed:
• latest date by which the document has to be implemented at (dop) 2018-01-07
national level by publication of an identical national
standard or by endorsement
• latest date by which the national standards conflicting with (dow) 2020-04-07
the document have to be withdrawn

This document supersedes EN 60749-6:2002.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Endorsement notice
The text of the International Standard IEC 60749-6:2017 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards indicated:
IEC 60749-20 NOTE Harmonized as EN 60749-20.
1)
IEC 60749-43 NOTE Harmonized as EN 60749-43 .


1) At draft stage.
2

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SIST EN 60749-6:2017



IEC 60749-6

®


Edition 2.0 2017-03




INTERNATIONAL



STANDARD



















Semiconductor devices – Mechanical and climatic test methods –

Part 6: Storage at high temperature



























INTERNATIONAL

ELECTROTECHNICAL


COMMISSION





ICS 31.080.01 ISBN 978-2-8322-4003-8



  Warning! Make sure that you obtained this publication from an authorized distributor.


® Registered trademark of the International Electrotechnical Commission

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SIST EN 60749-6:2017
– 2 – IEC 60749-6:2017 © IEC 2017
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 5
5 Procedure . 5
5.1 Test conditions . 5
5.2 Measurements . 6
5.3 Failure crieria . 6
6 Summary . 7
Bibliography . 8

Table 1 – High temperature storage conditions . 6

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SIST EN 60749-6:2017
IEC 60749-6:2017 © IEC 2017 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 6: Storage at high temperature

FOREWORD
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all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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consensus of opinion on the relevant subjects since each technical committee has representation from all
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3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
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4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum e
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