SIST EN 60749-34:2011

Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling (IEC 60749-34:2010)

This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when lowvoltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 34: Lastwechselprüfung (IEC 60749-34:2010)

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 34: Cycles en puissance (CEI 60749-34:2010)

La CEI 60749-34:2010 décrit une méthode d'essai utilisée pour déterminer la résistance d'un dispositif à semiconducteurs aux contraintes thermiques et mécaniques du fait de la dissipation de puissance de la puce à semiconducteur interne et des connecteurs internes. Cela se produit lorsque des polarisations de fonctionnement à basse tension pour la conduction avant (courants de charge) sont périodiquement appliquées et enlevées en causant des variations rapides de température. L'essai de cycles de puissance est destiné à simuler des applications types en électronique de puissance, et est complémentaire à la durée de vie en fonctionnement à haute température (voir CEI 60749-23). L'exposition à cet essai peut ne pas induire les mêmes mécanismes de défaillances que l'exposition aux cycles de température de l'air-air ou à un changement rapide de température utilisant la méthode du bain à deux fluides. Cet essai provoque une usure et est considéré comme destructif. Cette seconde édition annule et remplace la première édition parue en 2004 et constitue une révision technique. Les modifications importantes par rapport à l'édition antérieure comprennent:  - la spécification des conditions serrées pour des cycles en puissances plus accélérés dans le mode de fatigue de soudure de fil;  - des informations indiquant que dans des conditions d'itérations de puissance sévères, des densités de courant élevées dans une métallisation en couche mince de la puce peuvent déclencher des effets d'électromigration à proximité des fils de connexion.

Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 34. del: Močnostno cikliranje (IEC 60749-34:2010)

Ta del IEC 60749 opisuje preskusno metodo, ki se uporablja za ugotavljanje odpornosti polprevodniških elementov na termalno ali mehanske obremenitve zaradi cikliranja stresanja energije čipov notranjih polprevodnikov in notranjih konektorjev. Do tega pride, kadar se pri nizki napetosti delujoča odstopanja za prevajanja naprej (tokovne obremenitve) redno uvajajo in umikajo in s tem povzročijo hitre spremembe temperature. Preskus močnostnega cikliranja je namenjen simulaciji tipičnih uporab pri napetostnih elektronskih aparatih ter dopolnjuje dobo delovanja pri visoki temperaturi. Izpostavljenost temu preskusu lahko povzroči enake mehanizme odpovedi kot izpostavljenost cikliranju temperature zrak-zrak ali hitri spremembi temperature pri metodi kopeli dveh tekočin. Ta preskus povzroča izrabljenost in se šteje za porušitvenega.

General Information

• Status: Published
• Publication Date: 26-Dec-2010
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 15-Dec-2010
• Due Date: 19-Feb-2011
• Completion Date: 27-Dec-2010
• Ref Project: EN 60749-34:2010 - Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

Relations

• Replaces: SIST EN 60749-34:2004 - Semiconductor devices - Mechanical and climatic test methods -- Part 34: Power cycling
• Effective Date: 01-Dec-2013
• Revised: SIST EN 60749-34:2004 - Semiconductor devices - Mechanical and climatic test methods -- Part 34: Power cycling
• Effective Date: 03-Dec-2013
• Replaces: SIST EN 60749-34:2004 - Semiconductor devices - Mechanical and climatic test methods -- Part 34: Power cycling
• Effective Date: 28-Jan-2023

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN 60749-34:2011
01-februar-2011
1DGRPHãþD
SIST EN 60749-34:2004
3ROSUHYRGQLãNLHOHPHQWL0HWRGH]DPHKDQVNRLQNOLPDWVNRSUHVNXãDQMHGHO
0RþQRVWQRFLNOLUDQMH,(&
Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
(IEC 60749-34:2010)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 34:
Lastwechselprüfung (IEC 60749-34:2010)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
34: Cycles en puissance (CEI 60749-34:2010)
Ta slovenski standard je istoveten z: EN 60749-34:2010
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 60749-34:2011 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 60749-34:2011

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SIST EN 60749-34:2011

EUROPEAN STANDARD
EN 60749-34

NORME EUROPÉENNE
December 2010
EUROPÄISCHE NORM

ICS 31.080.01 Supersedes EN 60749-34:2004


English version


Semiconductor devices -
Mechanical and climatic test methods -
Part 34: Power cycling
(IEC 60749-34:2010)


Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Méthodes d'essais mécaniques et Mechanische und klimatische
climatiques - Prüfverfahren -
Partie 34: Cycles en puissance Teil 34: Lastwechselprüfung
(CEI 60749-34:2010) (IEC 60749-34:2010)




This European Standard was approved by CENELEC on 2010-12-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Management Centre: Avenue Marnix 17, B - 1000 Brussels


© 2010 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60749-34:2010 E

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SIST EN 60749-34:2011
EN 60749-34:2010 - 2 -
Foreword
The text of document 47/2068/FDIS, future edition 2 of IEC 60749-34, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 60749-34 on 2010-12-01.
This European Standard supersedes EN 60749-34:2004.
The significant changes with respect from EN 60749-34:2004 include:
– the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue
mode;
– information that under harsh power cycling conditions high current densities in a thin die metalization
might initiate electromigration effects close to wire bonds.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
(dop) 2011-09-01
national standard or by endorsement
– latest date by which the national standards conflicting
(dow) 2013-12-01
with the EN have to be withdrawn
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 60749-34:2010 was approved by CENELEC as a European
Standard without any modification.
__________

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SIST EN 60749-34:2011
- 3 - EN 60749-34:2010
Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications

The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.

Publication Year Title EN/HD Year

IEC 60747-1 2006 Semiconductor devices - - -
Part 1: General


IEC 60747-2 2000 Semiconductor devices - Discrete devices and - -
integrated circuits -
Part 2: Rectifier diodes


IEC 60747-6 2000 Semi conductor devices - - -
Part 6: Thyristors


IEC 60749-3 - Semiconductor devices - Mechanical and EN 60749-3 -
climatic test methods -
Part 3: External visual examination


IEC 60749-23 - Semiconductor devices - Mechanical and EN 60749-23 -
climatic test methods -
Part 23: High temperature operating life

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SIST EN 60749-34:2011

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SIST EN 60749-34:2011
IEC 60749-34
®
Edition 2.0 2010-10
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE


Semiconductor devices – Mechanical and climatic test methods –
Part 34: Power cycling

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 34: Cycles en puissance

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
L
CODE PRIX
ICS 31.080.01 ISBN 978-2-88912-232-5
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN 60749-34:2011
– 2 – 60749-34 © IEC:2010
CONTENTS
FOREWORD.3
1 Scope and object.5
2 Normative references .5
3 Terms and definitions .5
4 Test apparatus .6
5 Procedure .7
6 Test conditions .7
7 Precautions .8
8 Measurements.9
9 Failure criteria .9
10 Summary.9
Bibliography.10

Figure 1 – Typical load power P and temperature cycle test condition 2.8

Table 1 – Test conditions.8

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SIST EN 60749-34:2011
60749-34 © IEC:2010 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 34: Power cycling


FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-34 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2004 and constitutes a
technical revision. The significant changes with respect from the previous edition include:
– the specification of tighter conditions for more accelerated power cycling in the wire bond
fatigue mode;
– information that under harsh power cycling conditions high current densities in a thin die
...