ASTM F76-86(2002)
(Test Method)Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
SIGNIFICANCE AND USE
In order to choose the proper material for producing semiconductor devices, knowledge of material properties such as resistivity, Hall coefficient, and Hall mobility is useful. Under certain conditions, as outlined in the Appendix, other useful quantities for materials specification, including the charge carrier density and the drift mobility, can be inferred.
SCOPE
1.1 These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor specimens. These test methods differ most substantially in their test specimen requirements.
1.1.1 Test Method A, van der Pauw (1) -This test method requires a singly connected test specimen (without any isolated holes), homogeneous in thickness, but of arbitrary shape. The contacts must be sufficiently small and located at the periphery of the specimen. The measurement is most easily interpreted for an isotropic semiconductor whose conduction is dominated by a single type of carrier.
1.1.2 Test Method B, Parallelepiped or Bridge—TypeThis test method requires a specimen homogeneous in thickness and of specified shape. Contact requirements are specified for both the parallelepiped and bridge geometries. These test specimen geometries are desirable for anisotropic semiconductors for which the measured parameters depend on the direction of current flow. The test method is also most easily interpreted when conduction is dominated by a single type of carrier.
1.2 These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for verifying contact quality is given.
Note 1—Practice F 418 covers the preparation of gallium arsenide phosphide specimens.
1.3 The method in Practice F 418 does not provide an interpretation of the results in terms of basic semiconductor properties (for example, majority and minority carrier mobilities and densities). Some general guidance, applicable to certain semiconductors and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user.
1.4 Interlaboratory tests of these test methods (Section 19) have been conducted only over a limited range of resistivities and for the semiconductors, germanium, silicon, and gallium arsenide. However, the method is applicable to other semiconductors provided suitable specimen preparation and contacting procedures are known. The resistivity range over which the method is applicable is limited by the test specimen geometry and instrumentation sensitivity.
1.5 The values stated in acceptable metric units are to be regarded as the standard. The values given in parentheses are for information only. (See also 3.1.4.)
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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Designation:F 76–86 (Reapproved 2002)
Standard Test Methods for
Measuring Resistivity and Hall Coefficient and Determining
1
Hall Mobility in Single-Crystal Semiconductors
ThisstandardisissuedunderthefixeddesignationF76;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginal
adoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscript
epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope arsenide. However, the method is applicable to other semicon-
ductors provided suitable specimen preparation and contacting
1.1 These test methods cover two procedures for measuring
procedures are known. The resistivity range over which the
the resistivity and Hall coefficient of single-crystal semicon-
method is applicable is limited by the test specimen geometry
ductor specimens. These test methods differ most substantially
and instrumentation sensitivity.
in their test specimen requirements.
2 1.5 The values stated in acceptable metric units are to be
1.1.1 Test Method A, van der Pauw (1) —Thistestmethod
regarded as the standard. The values given in parentheses are
requiresasinglyconnectedtestspecimen(withoutanyisolated
for information only. (See also 3.1.4.)
holes), homogeneous in thickness, but of arbitrary shape. The
1.6 This standard does not purport to address all of the
contacts must be sufficiently small and located at the periphery
safety concerns, if any, associated with its use. It is the
of the specimen. The measurement is most easily interpreted
responsibility of the user of this standard to establish appro-
for an isotropic semiconductor whose conduction is dominated
priate safety and health practices and determine the applica-
by a single type of carrier.
bility of regulatory limitations prior to use.
1.1.2 Test Method B, Parallelepiped or Bridge-Type—This
testmethodrequiresaspecimenhomogeneousinthicknessand
2. Referenced Documents
of specified shape. Contact requirements are specified for both
3
2.1 ASTM Standards:
the parallelepiped and bridge geometries. These test specimen
D1125 Test Methods for Electrical Conductivity and Re-
geometries are desirable for anisotropic semiconductors for
sistivity of Water
which the measured parameters depend on the direction of
E177 Practice for Use of the Terms Precision and Bias in
current flow. The test method is also most easily interpreted
ASTM Test Methods
when conduction is dominated by a single type of carrier.
F26 Test Methods for Determining the Orientation of a
1.2 These test methods do not provide procedures for
Semiconductive Single Crystal
shaping, cleaning, or contacting specimens; however, a proce-
F43 Test Methods for Resistivity of Semiconductor Mate-
dure for verifying contact quality is given.
rials
NOTE 1—Practice F418 covers the preparation of gallium arsenide
F47 TestMethodforCrystallographicPerfectionofSilicon
phosphide specimens.
by Preferential Etch Techniques
1.3 The method in Practice F418 does not provide an
F418 Practice for Preparation of Samples of the Constant
interpretation of the results in terms of basic semiconductor
Composition Region of Epitaxial Gallium Arsenide Phos-
properties (for example, majority and minority carrier mobili-
phide for Hall Effect Measurements
ties and densities). Some general guidance, applicable to
2.2 SEMI Standard:
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certain semiconductors and temperature ranges, is provided in
C1 Specifications for Reagents
theAppendix. For the most part, however, the interpretation is
3. Terminology
left to the user.
1.4 Interlaboratory tests of these test methods (Section 19)
3.1 Definitions:
have been conducted only over a limited range of resistivities 3.1.1 Hall coeffıcient—the ratio of the Hall electric field
and for the semiconductors, germanium, silicon, and gallium
(due to the Hall voltage) to the product of the current density
and the magnetic flux density (see X1.4).
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These test methods are under the jurisdiction of ASTM Committee F01 on
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Electronics and are the direct responsibility of Subcommittee F01.15 on Compound For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Semiconductors. contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
Current edition approved May 10, 2002. Published December 1986. Originally Standards volume information, refer to the standard’s Document Summary page on
published as F76–67T. Last previous edition F76–84. the ASTM website.
2 4
Theboldfacenumbersinparenthesesrefertothelistofreferencesattheendof AvailablefromSemiconductorEquipmentandMaterialsInstitute,625EllisSt.,
these test methods. Suite 212, Mountain View, CA 94043.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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