ASTM E1855-15
(Test Method)Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
SIGNIFICANCE AND USE
5.1 The neutron test spectrum must be known in order to use a measured device response to predict the device performance in an operational environment (E1854). Typically, neutron spectra are determined by use of a set of sensors with response functions sensitive over the neutron energy region to which the device under test (DUT) responds (E721). For silicon bipolar devices exposed in reactor neutron spectra, this effective energy range is between 0.01 and 10 MeV. A typical set of activation reactions that lack fission reactions from nuclides such as 235U, 237Np, or 239Pu, will have very poor sensitivity to the spectrum between 0.01 and 2 MeV. For a pool-type reactor spectrum, 70 % of the DUT electronic damage response may lie in this range.
5.2 When dosimeters with a significant response in the 10 keV to 2 MeV energy region, such as fission foils, are unavailable, silicon transistors may provide a dosimeter with the needed response to define the spectrum in this critical energy range. When fission foils are part of the sensor set, the silicon sensor provides confirmation of the spectral shape in this energy region.
5.3 Silicon bipolar transistors, such as type 2N2222A, are inexpensive, smaller than fission foils contained in a boron ball, and sensitive to a part of the neutron spectrum important to the damage of modern silicon electronics. They also can be used directly in arrays to map 1 Mev(Si) equivalent displacement damage fluence. The proper set of steps to take in reading the transistor-gain degradation is described in this test method.
5.4 The energy-dependence of the displacement damage function for silicon is found in E722. The major portion of the response for the silicon transistors will generally be above 100 keV.
SCOPE
1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra and as 1 Mev(Si) equivalent displacement damage fluence monitors.
1.2 The neutron displacement in silicon can serve as a neutron spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 × 1012 n/cm 2 to 1 × 1014 n/cm2 and should be useful up to 1 × 1015 n/cm2. This test method details the acquisition and use of 1 Mev(Si) equivalent fluence information for the partial determination of the neutron spectra by using 2N2222A transistors.
1.3 This sensor yields a direct measurement of the silicon 1 Mev equivalent fluence by the transfer technique.
1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.
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Designation: E1855 − 15
Standard Test Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
1
Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
2
1. Scope 2.2 ASTM Standards:
E170Terminology Relating to Radiation Measurements and
1.1 This test method covers the use of 2N2222A silicon
Dosimetry
bipolar transistors as dosimetry sensors in the determination of
E261Practice for Determining Neutron Fluence, Fluence
neutron energy spectra and as 1 Mev(Si) equivalent displace-
Rate, and Spectra by Radioactivation Techniques
ment damage fluence monitors.
E265Test Method for Measuring Reaction Rates and Fast-
Neutron Fluences by Radioactivation of Sulfur-32
1.2 The neutron displacement in silicon can serve as a
E720Guide for Selection and Use of Neutron Sensors for
neutron spectrum sensor in the range 0.1 to 2.0 MeV when
Determining Neutron Spectra Employed in Radiation-
fissionfoilsarenotavailable.Ithasbeenappliedinthefluence
12 2 14 2
Hardness Testing of Electronics
range between2×10 n/cm to1×10 n/cm and should be
15 2
E721Guide for Determining Neutron Energy Spectra from
useful up to1×10 n/cm . This test method details the
Neutron Sensors for Radiation-Hardness Testing of Elec-
acquisition and use of 1 Mev(Si) equivalent fluence informa-
tronics
tion for the partial determination of the neutron spectra by
E722PracticeforCharacterizingNeutronFluenceSpectrain
using 2N2222A transistors.
Terms of an Equivalent Monoenergetic Neutron Fluence
1.3 This sensor yields a direct measurement of the silicon 1
for Radiation-Hardness Testing of Electronics
Mev equivalent fluence by the transfer technique.
E844Guide for Sensor Set Design and Irradiation for
Reactor Surveillance, E 706 (IIC)
1.4 The values stated in SI units are to be regarded as
E944Guide for Application of Neutron Spectrum Adjust-
standard. No other units of measurement are included in this
ment Methods in Reactor Surveillance, E 706 (IIA)
standard.
E1854Practice for Ensuring Test Consistency in Neutron-
1.5 This standard does not purport to address all of the
Induced Displacement Damage of Electronic Parts
safety concerns, if any, associated with its use. It is the
E2005Guide for Benchmark Testing of Reactor Dosimetry
responsibility of the user of this standard to establish appro-
in Standard and Reference Neutron Fields
priate safety and health practices and determine the applica-
E2450Practice for Application of CaF (Mn) Thermolumi-
2
bility of regulatory requirements prior to use.
nescence Dosimeters in Mixed Neutron-Photon Environ-
ments
2. Referenced Documents
3. Terminology
2.1 The ASTM standards E170, E261, and E265 provide a
3.1 Symbols:
background for understanding how sensors are used in radia-
Φ =the silicon 1 Mev equivalent fluence (see Practice E722).
1
tion measurements and general dosimetry. The rest of the
h = i /i where i is the collector current and i is the base
FE c b c b
standards referenced in the list discuss the choice of sensors,
current, in a common emitter circuit.
spectrumdeterminationswithsensordata,andthepredictionof
neutron displacement damage in some semiconductor devices,
4. Summary of Test Method
particularly silicon.
4.1 Gaindegradationof2N2222Asiliconbipolartransistors
measured in a test (simulation) environment is compared with
a measured reference neutron environment. The Φ in the
1r
1
ThistestmethodisunderthejurisdictionofASTMCommitteeE10onNuclear
Technology and Applicationsand is the direct responsibility of Subcommittee
2
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices. For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Current edition approved Oct. 1, 2015. Published November 2015. Originally contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
approved in 1996. Last previous edition approved in 2010 as E1855–10. DOI: Standards volume information, refer to the standard’s Document Summary page on
10.1520/E1855-15. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1
---------------------- Page: 1 ----------------------
E1855 − 15
reference environment is derived from the known reference out) at 180°C for 24 h followed by ambient air cooling before
spectrum and is used to determine a measured Φ in the test being used as controls. These control transistors are not
1t
3
environment (1,2) .Thesubscripts rand trefertothereference exposedagaintoradiationd
...
This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation: E1855 − 10 E1855 − 15
Standard Test Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
1
Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron
energy spectra,spectra and as silicon 1-MeV(Si)1 Mev(Si) equivalent displacement damage fluence monitors.
1.2 The neutron displacement damage is especially valuablein silicon can serve as a neutron spectrum sensor in the range 0.1
12 2 14
to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 × 10 n/cm andto 1 × 10
2 15 2
n/cm and should be useful up to 1 × 10 n/cm . This test method details the steps for the acquisition and use of silicon 1-MeV1
Mev(Si) equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron
spectra.for the partial determination of the neutron spectra by using 2N2222A transistors.
1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and This
sensor yields a direct measurement of the silicon 1-MeV 1 Mev equivalent fluence by the transfer technique.
1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory
requirements prior to use.
2. Referenced Documents
2.1 The ASTM standards E170, E261, and E265 provide a background for understanding how sensors are used in radiation
measurements and general dosimetry. The rest of the standards referenced in the list discuss the choice of sensors, spectrum
determinations with sensor data, and the prediction of neutron displacement damage in some semiconductor devices, particularly
silicon.
2
2.2 ASTM Standards:
E170 Terminology Relating to Radiation Measurements and Dosimetry
E261 Practice for Determining Neutron Fluence, Fluence Rate, and Spectra by Radioactivation Techniques
E265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
E720 Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness
Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
E722 Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for
Radiation-Hardness Testing of Electronics
E844 Guide for Sensor Set Design and Irradiation for Reactor Surveillance, E 706 (IIC)
E944 Guide for Application of Neutron Spectrum Adjustment Methods in Reactor Surveillance, E 706 (IIA)
E1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
E2005 Guide for Benchmark Testing of Reactor Dosimetry in Standard and Reference Neutron Fields
E2450 Practice for Application of CaF (Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments
2
1
This test method is under the jurisdiction of ASTM Committee E10 on Nuclear Technology and Applicationsand is the direct responsibility of Subcommittee E10.07 on
Radiation Dosimetry for Radiation Effects on Materials and Devices.
Current edition approved Oct. 1, 2010Oct. 1, 2015. Published October 2010November 2015. Originally approved in 1996. Last previous edition approved in 20052010
ε1
as E1855 – 05E1855 – 10. . DOI: 10.1520/E1855-10.10.1520/E1855-15.
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1
---------------------- Page: 1 ----------------------
E1855 − 15
3. Terminology
3.1 Symbols:
Φ =
...
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