ASTM F1239-94

Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction

SCOPE
1.1 These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related to the amount of interstitial oxygen lost during specified thermal cycles.
1.2 These test methods may be used to compare qualitatively the precipitation characteristics of two or more groups of wafers.
1.3 These test methods may be applied to any - or -type, any orientation Czochralski silicon wafers whose thickness, resistivity, and surface finish are such as to permit the oxygen concentration to be determined by infrared absorption and whose oxygen concentration is such as to produce measurable oxygen loss.
1.4 These test methods are not suitable for determining the width or characteristics of a "denuded zone," a region near the surface of a wafer that is essentially free of oxide precipitates.
1.5 Because these test methods are destructive, suitable sampling techniques must be employed.
1.6 The values stated in SI units are regarded as standard.
1.7  This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.  Specific hazard statements are given in Section 8.

General Information

• Status: Historical
• Publication Date: 09-Jan-2002
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaced By: ASTM F1239-02 - Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction (Withdrawn 2003)
• Effective Date: 10-Jan-2002

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or
withdrawn. Contact ASTM International (www.astm.org) for the latest information.
Designation: F 1239 – 94
AMERICAN SOCIETY FOR TESTING AND MATERIALS
100 Barr Harbor Dr., West Conshohocken, PA 19428
Reprinted from the Annual Book of ASTM Standards. Copyright ASTM
Standard Test Methods for
Oxygen Precipitation Characterization of Silicon Wafers by
1
Measurement of Interstitial Oxygen Reduction
This standard is issued under the fixed designation F 1239; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope F 951 Test Method for Determination of Radial Interstitial
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Oxygen Variation
1.1 These test methods cover complementary procedures for
F 1188 Test Method for Interstitial Atomic Oxygen Content
testing the oxygen precipitation characteristics of silicon wa-
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of Silicon by Infrared Absorption
fers. It is assumed that the precipitation characteristics are
2.2 SEMI Standards:
related to the amount of interstitial oxygen lost during specified
5
C 1 Specifications for Reagents
thermal cycles.
5
C 3 Specifications for Gases
1.2 These test methods may be used to compare qualita-
2.3 Other Standard:
tively the precipitation characteristics of two or more groups of
DIN 50 438, Part 1 Testing of Materials for Semiconductor
wafers.
Technology Determination of Impurity Content in Semi-
1.3 These test methods may be applied to any n-or p-type,
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conductors by Infrared Absorption Oxygen in Silicon
any orientation Czochralski silicon wafers whose thickness,
resistivity, and surface finish are such as to permit the oxygen
3. Summary of Test Method
concentration to be determined by infrared absorption and
3.1 A representative sample is selected from each group of
whose oxygen concentration is such as to produce measurable
wafers to be tested.
oxygen loss.
3.2 The initial value of interstitial oxygen concentration is
1.4 These test methods are not suitable for determining the
measured by the infrared absorption method at the desired
width or characteristics of a “denuded zone,’’ a region near the
points on each wafer.
surface of a wafer that is essentially free of oxide precipitates.
3.3 The wafers are passed through one of two simulation
1.5 Because these test methods are destructive, suitable
thermal cycles. Cycle A consists solely of a precipitation step.
sampling techniques must be employed.
Cycle B consists of a nucleation step followed by a precipita-
1.6 The values stated in SI units are regarded as standard.
tion step.
1.7 This standard does not purport to address all of the 3.4 After the thermal cycle, the oxide film is stripped and
safety concerns, if any, associated with its use. It is the the final value of oxygen concentration is measured at the same
responsibility of the user of this standard to establish appro- points on each wafer using the same technique and instrumen-
priate safety and health practices and determine the applica- tation as was used to determine the initial value.
bility of regulatory limitations prior to use. Specific hazard 3.5 The oxygen reduction is determined for each wafer (or
statements are given in Section 8. for each point on each wafer) tested as the difference between
the initial and final values.
2. Referenced Documents 3.6 If all samples have the same initial oxygen concentra-
tion (within a narrow range), the average oxygen reduction for
2.1 ASTM Standards:
2 each test condition (such as, group or position on wafer) is
D 1193 Specification For Reagent Water
computed, and the appropriate comparisons made.
F 416 Test Method for Detection of Oxidation Induced
3 3.7 If the samples have initial oxygen concentrations that
Defects in Polished Silicon Wafers
cover a relatively wide range, a plot of oxygen reduction
F 612 Practice for Cleaning Surfaces of Polished Silicon
4 against initial oxygen concentration is made for each group or
Slices
position. Again appropriate comparisons can be made.
1 4. Significance and Use
These test methods are under the jurisdiction of ASTM Committee F-01 on
Electronics and are the direct responsibility of Subcommittee F01.06 on Silicon
4.1 Oxide precipitates in the bulk of a silicon substrate
Materials and Process Control.
wafer can act as gettering sites for contamination that may be
Current edition approved Aug. 15, 1994. Published October 1994. Originally
published as F 1239 – 89. Last previous edition F 1239 – 89.
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Annual Book of ASTM Standards, Vol 11.01.
3 5
Annual Book of ASTM Standards, Vol 10.05. Available from Semiconductor Equipment and Materials International, 805 E.
4
Discontinued; see 1992 Annual Book of ASTM Standards, Vol 10.05. Middlefield Rd., Mountain View, CA 94043.
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