ASTM F980M-96(2003)

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]

SIGNIFICANCE AND USE
Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in them. A determination of hardness is often necessary for the short term (≈100 μs) as well as long term (permanent damage) following exposure.
SCOPE
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 09-Jun-1996
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaces: ASTM F980M-96 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]
• Effective Date: 10-Jun-1996

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
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Designation:F980M–96 (Reapproved 2003)
Standard Guide for
Measurement of Rapid Annealing of Neutron-Induced
Displacement Damage in Silicon Semiconductor Devices
1
(Metric)
This standard is issued under the fixed designation F980M; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 3. Terminology
1.1 This guide defines the requirements and procedures for 3.1 Definitions of Terms Specific to This Standard:
testing silicon discrete semiconductor devices and integrated 3.1.1 annealing factor—the ratio of the displacement dam-
circuits for rapid-annealing effects from displacement damage age (as manifested in device parametric measurements) as a
resulting from neutron radiation. This test will produce degra- function of time following a pulse of neutrons and the
dation of the electrical properties of the irradiated devices and displacement damage remaining at the time the initial damage
should be considered a destructive test. Rapid annealing of achieves quasi equilibrium, approximately 1000 s.
displacement damage is usually associated with bipolar tech- 3.1.1.1 Discussion—Annealing factors have typical values
nologies. of 2 to 10 for these periods of time following irradiation; see
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1.2 This standard does not purport to address all of the Refs (1, 2, 3, 4, 5, 6, 7).
safety concerns, if any, associated with its use. It is the 3.1.2 in situ tests—electrical measurements made on de-
responsibility of the user of this standard to consult and vices before, after, or during irradiation while they remain in
establish appropriate safety and health practices and deter- the immediate vicinity of the irradiation location. All rapid-
mine the applicability of regulatory limitations prior to use. annealing measurements are performed in situ because mea-
surement must begin immediately following irradiation (usu-
2. Referenced Documents
ally <1 ms).
2
2.1 ASTM Standards:
3.1.3 remote tests—electrical measurements made on de-
E666 PracticeforCalculatingAbsorbedDoseFromGamma vices that are physically removed from the irradiation location.
or X Radiation
For the purpose of this guide, remote tests are used only for the
E720 Guide for Selection and Use of Neutron Sensors for characterization of the parts before and after they are subjected
Determining Neutron Spectra Employed in Radiation- to the neutron radiation (see 6.4).
Hardness Testing of Electronics
4. Summary of Guide
E721 Guide for Determining Neutron Energy Spectra from
Neutron Sensors for Radiation-Hardness Testing of Elec- 4.1 Arapid-annealing radiation test requires continual time-
tronics sequential electrical-parameter measurements of key param-
E722 Practice for Characterizing Neutron Fluence Spectra eters of a device be made immediately following exposure to a
inTerms of an Equivalent Monoenergetic Neutron Fluence pulse of neutron radiation capable of causing significant
for Radiation-Hardness Testing of Electronics displacement damage.
F1032 Guide for Measuring Time-Dependent Total-Dose 4.2 Because many factors enter into the effects of the
Effects in Semiconductor Devices Exposed to Pulsed radiation on the part, parties to the test must establish many
3
Ionizing Radiation (Discontinued 1994) circumstances of the test before the validity of the test can be
established or the results of one group of parts can be
meaningfully compared with those of another group. Those
1 factors that must be established are as follows:
This guide is under the jurisdiction of ASTM Committee F01 on Electronics
and is the direct responsibility of Subcommittee F01.11 . 4.2.1 Radiation Source—The type and characteristics of the
Current edition approved June 10, 2003. Published June 2003. Originally
neutron radiation source to be used (see 6.2).
approved in 1986. Last previous edition approved in 1996 as F980M – 96. DOI:
4.2.2 Dose Rate Range—The range of ionizing dose rates
10.1520/F0980M-96R03.
2
within which the neutron exposures must take place. These
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
Standards volume information, refer to the standard’s Document Summary page on
the ASTM website.
3 4
Withdrawn. The last approved version of this historical standard is referenced The boldface numbers in parentheses refer to the list of references at the end of
on www.astm.org. this standard.
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