ASTM F615M-95
(Practice)Standard Practice for Determining Safe Current Pulse-Operating Regions for Metallization on Semiconductor Components [Metric]
Standard Practice for Determining Safe Current Pulse-Operating Regions for Metallization on Semiconductor Components [Metric]
SCOPE
1.1 This practice covers procedures for determining operating regions that are safe from metallization burnout induced by current pulses of less than 1-s duration.
Note 1—In this practice, "metallization" refers to metallic layers on semiconductor components such as interconnect patterns on integrated circuits. The principles of the practice may, however, be extended to nearly any current-carrying path. The term "burnout" refers to either fusing or vaporization.
1.2 This practice is based on the application of unipolar rectangular current test pulses. An extrapolation technique is specified for mapping safe operating regions in the pulse-amplitude versus pulse-duration plane. A procedure is provided in to relate safe operating regions established from rectangular pulse data to safe operating regions for arbitrary pulse shapes.
1.3 This practice is not intended to apply to metallization damage mechanisms other than fusing or vaporization induced by current pulses and, in particular, is not intended to apply to long-term mechanisms, such as metal migration.
1.4 This practice is not intended to determine the nature of any defect causing failure.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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Designation: F 615M – 95
METRIC
Standard Practice for
Determining Safe Current Pulse-Operating Regions for
1
Metallization on Semiconductor Components [Metric]
This standard is issued under the fixed designation F 615M; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope 3. Summary of Practice
1.1 This practice covers procedures for determining operat- 3.1 Specimens are selected from the population being evalu-
ing regions that are safe from metallization burnout induced by ated.
current pulses of less than 1-s duration. 3.2 The d-c resistance of each specimen is measured.
3.3 Each specimen is subjected to stress from rectangular
NOTE 1—In this practice, “metallization” refers to metallic layers on
current pulses varying in amplitude and duration according to
semiconductor components such as interconnect patterns on integrated
a predetermined schedule of pulse width and amplitudes.
circuits. The principles of the practice may, however, be extended to
nearly any current-carrying path. The term “burnout” refers to either 3.4 A second d-c resistance measurement is made on each
fusing or vaporization.
specimen after each pulse, and it is characterized as having
failed or survived.
1.2 This practice is based on the application of unipolar
3.5 The number, x, of specimens surviving and the total
rectangular current test pulses. An extrapolation technique is
number, n, of specimens tested at each pulse width and
specified for mapping safe operating regions in the pulse-
amplitude are analyzed statistically to determine the burnout
amplitude versus pulse-duration plane. A procedure is provided
level at each test pulse width for the desired burnout survival
in Appendix X2 to relate safe operating regions established
probability and confidence level.
from rectangular pulse data to safe operating regions for
3.6 A point corresponding to the burnout level (at the
arbitrary pulse shapes.
desired probability and confidence level) is plotted for each of
1.3 This practice is not intended to apply to metallization
the test pulse duration values in the pulse-amplitude, pulse-
damage mechanisms other than fusing or vaporization induced
duration plane. Based on these points, an extrapolation tech-
by current pulses and, in particular, is not intended to apply to
nique is used to plot the boundary of the safe operating region.
long-term mechanisms, such as metal migration.
3.7 The following items are not specified by the practice and
1.4 This practice is not intended to determine the nature of
are subject to agreement by the parties to the test:
any defect causing failure.
3.7.1 The procedure by which the specimens are to be
1.5 This standard does not purport to address all of the
selected.
safety concerns, if any, associated with its use. It is the
3.7.2 Test patterns that will be representative of adjacent
responsibility of the user of this standard to establish appro-
metallization on a die or wafer (5.3).
priate safety and health practices and determine the applica-
3.7.3 The schedule of pulse amplitudes and durations to be
bility of regulatory limitations prior to use.
applied to the test samples (9.8).
2. Terminology
3.7.4 The level of probability and confidence to be used in
calculations to establish the boundary of the safe operating
2.1 Definitions of Terms Specific to This Standard:
region (10.1).
2.1.1 failure—a change in the measured resistance of
3.7.5 The amount of change of resistance that will define the
610 % DR/R or as agreed upon by the parties to the test.
criterion for failure.
3.7.6 The statistical model to be used to determine the
1
This practice is under the jurisdiction of ASTM Committee F01 on Electronics
burnout probability at a desired stress level.
and is the direct responsibility of Subcommittee F01.11 on Quality and Hardness
3.7.7 The form and content of the report.
Assurance.
Current edition approved May 15, 1995. Published July 1995.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
F 615M – 95
4. Significance and Use an open circuit; the molten metal may become redistributed so
that the defect appears cured and will lead to failure on
4.1 Solid-state electronic devices subjected to stresses from
successive pulses.
excessive current pulses sometimes fail because a portion of
the metallization fus
...
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