Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as “burn-in”, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 23: Lebensdauer bei hoher Temperatur

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 23: Durée de vie en fonctionnemement à haute température

Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 23. del: Obratovalna življenjska doba pri visoki temperaturi - Dopolnilo A1 (IEC 60749-23:2004/A1:2011)

Ta preskus se uporablja za določevanje učinkov pogojev vplivanja in temperature na elemente v trdnem stanju v času. Pospešeno posnema delovne razmere elementov in se uporablja predvsem za kvalifikacijo in spremljanje zanesljivosti elementov. Za presejanje okvar, povezanih s smrtnostjo dojenčkov, se lahko uporabi oblika kratkotrajnega visokotemperaturnega vpliva na življenjsko dobo, splošno znana kot »vžiganje«. Natančna uporaba in izvedba vžiganja nista zajeti v tem standardu.

General Information

Status
Published
Publication Date
03-Mar-2011
Drafting Committee
Parallel Committee
Current Stage
6060 - Document made available
Due Date
04-Mar-2011
Completion Date
04-Mar-2011

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Standards Content (sample)

SLOVENSKI STANDARD
SIST EN 60749-23:2004/A1:2011
01-maj-2011
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 23. del:
Obratovalna življenjska doba pri visoki temperaturi - Dopolnilo A1 (IEC 60749-
23:2004/A1:2011)
Semiconductor devices - Mechanical and climatic test methods - Part 23: High
temperature operating life (IEC 60749-23:2004/A1:2011)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 23:
Lebensdauer bei hoher Temperatur (IEC 60749-23:2004/A1:2011)

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie

23: Durée de vie en fonctionnemement à haute température (CEI 60749-
23:2004/A1:2011)
Ta slovenski standard je istoveten z: EN 60749-23:2004/A1:2011
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 60749-23:2004/A1:2011 en

2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 60749-23:2004/A1:2011
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SIST EN 60749-23:2004/A1:2011
EUROPEAN STANDARD
EN 60749-23/A1
NORME EUROPÉENNE
March 2011
EUROPÄISCHE NORM
ICS 31.080.01
English version
Semiconductor devices -
Mechanical and climatic test methods -
Part 23: High temperature operating life
(IEC 60749-23:2004/A1:2011)
Dispositifs à semiconducteurs - Halbleiterbauelemente -
Méthodes d'essais mécaniques et Mechanische und klimatische
climatiques - Prüfverfahren -
Partie 23: Durée de vie en Teil 23: Lebensdauer bei hoher
fonctionnemement à haute température Temperatur
(CEI 60749-23:2004/A1:2011) (IEC 60749-23:2004/A1:2011)

This amendment A1 modifies the European Standard EN 60749-23:2004; it was approved by CENELEC on

2011-03-03. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which

stipulate the conditions for giving this amendment the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on

application to the Central Secretariat or to any CENELEC member.

This amendment exists in three official versions (English, French, German). A version in any other language

made by translation under the responsibility of a CENELEC member into its own language and notified to the

Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,

the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,

Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,

Spain, Sweden, Switzerland and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Management Centre: Avenue Marnix 17, B - 1000 Brussels

© 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.

Ref. No. EN 60749-23:2004/A1:2011 E
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SIST EN 60749-23:2004/A1:2011
EN 60749-23:2004/A1:2011 - 2 -
Foreword

The text of document 47/2017/CDV, future amendment 1 to IEC 60749-23:2004, prepared by IEC TC 47,

Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by

CENELEC as amendment A1 to
...

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