Semiconductor devices - Mechanical and climatic test methods - Part 43: Guidelines for IC reliability qualification plans

IEC 60749-43:2017 gives guidelines for reliability qualification plans of semiconductor integrated circuit products (ICs). This document is not intended for military- and space-related applications.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 43: Leitfaden Pläne zur Zuverlässigkeitsqualifikation von integrierten Schaltungen

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 43: Lignes directrices concernant les plans de qualification de la fiabilité des CI

L’IEC 60749-43:2017 fournit des lignes directrices concernant les plans de qualification de la fiabilité des produits de circuits intégrés (CI) à semiconducteurs. Le présent document n’est pas destiné aux applications militaires et spatiales.

Polprevodniški elementi - Mehanske in klimatske preskusne metode - 43. del: Smernice za načrtovanje ocenjevanja zanesljivosti integriranih vezij (IEC 60749-43:2017)

Ta del standarda IEC 60749 podaja smernice za načrtovanje ocenjevanja zanesljivosti polprevodniških integriranih vezij (IC). Ta dokument ni namenjen za vojaško uporabo in uporabo v vesolju.
OPOMBA 1: Proizvajalec lahko uporablja vzorce različnih velikosti, da zmanjša stroške in ohrani razumno zanesljivost skladno s to prilagoditvijo smernic, ki temelji na dokumentih EDR-4708, AEC Q100, JESD47 ali drugih ustreznih dokumentih, ki se lahko uporabijo, če so navedeni.
OPOMBA 2: Metoda z Weibullovo porazdelitvijo, ki se uporablja v tem dokumentu, je ena izmed številnih metod za izračun primerne velikosti vzorca in preskusnih pogojev za dano ocenjevanje zanesljivosti.

General Information

Status
Published
Publication Date
31-Aug-2017
Drafting Committee
Current Stage
6060 - Document made available
Due Date
01-Sep-2017
Completion Date
01-Sep-2017

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SLOVENSKI STANDARD
SIST EN 60749-43:2017
01-november-2017
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Semiconductor devices - Mechanical and climatic test methods - Part 43: Guidelines for

IC reliability qualification plans (IEC 60749-43:2017)

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie

43: Directives concernant les plans de qualification de la fiabilité des CI (IEC 60749-

43:2017)
Ta slovenski standard je istoveten z: EN 60749-43:2017
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
SIST EN 60749-43:2017 en

2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 60749-43:2017
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SIST EN 60749-43:2017
EUROPEAN STANDARD EN 60749-43
NORME EUROPÉENNE
EUROPÄISCHE NORM
September 2017
ICS 31.080.01
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 43: Guidelines for IC reliability qualification plans
(IEC 60749-43:2017)

Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische

mécaniques et climatiques - Partie 43: Lignes directrices Prüfverfahren - Teil 43: Leitfaden Pläne zur

concernant les plans de qualification de la fiabilité des CI Zuverlässigkeitsqualifikation von integrierten Schaltungen

(IEC 60749-43:2017) (IEC 60749-43:2017)

This European Standard was approved by CENELEC on 2017-07-20. CENELEC members are bound to comply with the CEN/CENELEC

Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC

Management Centre or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other language made by translation

under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the

same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,

Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,

Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,

Switzerland, Turkey and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels

© 2017 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.

Ref. No. EN 60749-43:2017 E
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SIST EN 60749-43:2017
EN 60749-43:2017
European foreword
The text of document 47/2389/FDIS, future edition 1 of IEC 60749-43, prepared by

IEC/TC 47 "Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved

by CENELEC as EN 60749-43:2017.
The following dates are fixed:
(dop) 2018-04-20
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2020-07-20
standards conflicting with the
document have to be withdrawn

Attention is drawn to the possibility that some of the elements of this document may be the subject of

patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.

Endorsement notice

The text of the International Standard IEC 60749-43:2017 was approved by CENELEC as a European

Standard without any modification.

In the official version, for Bibliography, the following notes have to be added for the standards

indicated:
IEC 60068-2-1 NOTE Harmonized as EN 60068-2-1.
IEC 60068-2-30 NOTE Harmonized as EN 60068-2-30.
IEC 60749-11 NOTE Harmonized as EN 60749-11.
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SIST EN 60749-43:2017
EN 60749-43:2017
Annexe ZA
(normative)
Références normatives à d'autres publications internationales
avec les publications européennes correspondantes

Les documents suivants, en tout ou en partie, sont référencés normativement dans le présent

document et sont indispensables pour son application. Pour les références datées, seule l'édition citée

s'applique. Pour les références non-datées, la dernière édition du document référencé (y compris les

amendements) s'applique.

NOTE 1 Dans le cas où une publication internationale est modifiée par des modifications communes, indiqué par (mod),

l'EN/le HD correspondant(e) s'applique.

NOTE 2 Les informations les plus récentes concernant les dernières versions des Normes Européennes listées dans la

présente annexe sont disponibles à l'adresse suivante: www.cenelec.eu.
Publication Année Titre EN/HD Année
IEC 60749-5 - Semiconductor devices - Mechanical and EN 60749-5 -
climatic test methods - Part 5: Steady-state
temperature humidity bias life test
IEC 60749-6 - Semiconductor devices - Mechanical and EN 60749-6 -
climatic test methods - Part 6: Storage at
high temperature
IEC 60749-15 - Dispositifs a semiconducteurs - Méthodes EN 60749-15 -
d¿essais mécaniques et climatiques --
Partie 15: Résistance à la température de
soudage pour dispositifs par trous
traversants
IEC 60749-20 - Dispositifs à semiconducteurs - Méthodes EN 60749-20 -
d'essais mécaniques et climatiques --
Partie 20: Résistance des CMS à boîtiers
plastique à l'effet combiné de l'humidité et
de la chaleur de brasage
IEC 60749-21 - Dispositifs à semiconducteurs - Méthodes EN 60749-21 -
d'essais mécaniques et climatiques --
Partie 21: Brasabilité
IEC 60749-23 - Dispositifs à semiconducteurs - Méthodes EN 60749-23 -
d'essais mécaniques et climatiques --
Partie 23: Durée de vie en
fonctionnemement à haute température
IEC 60749-25 - Dispositifs à semiconducteurs - Méthodes EN 60749-25 -
d'essais mécaniques et climatiques --
Partie 25: Cycles de température
IEC 60749-26 - Dispositifs à semiconducteurs - Méthodes EN 60749-26 -
d'essais mécaniques et climatiques --
Partie 26: Essai de sensibilité aux
décharges électrostatiques (DES) - Modèle
du corps humain (HBM)
IEC 60749-28 - Dispositifs à semiconducteurs - Méthodes EN 60749-28 -
d'essai mécaniques et climatiques - Partie
28: Essai de sensibilité aux décharges
électrostatiques (DES) Modèle de dispositif
chargé par contact direct (DC-CDM)
IEC 60749-29 - Dispositifs à semiconducteurs - Méthodes EN 60749-29 -
d'essais mécaniques et climatiques --
Partie 29: Essai de verrouillage
IEC 60749-42 - Semiconductor devices - Mechanical and EN 60749-42 -
climatic test methods -- Part 42:
Temperature humidity storage
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SIST EN 60749-43:2017
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SIST EN 60749-43:2017
IEC 60749-43
Edition 1.0 2017-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Mechanical and climatic test methods –
Part 43: Guidelines for IC reliability qualification plans
Dispositifs à semiconducteurs – Méthodes d'essais mécaniques et climatiques –

Partie 43: Lignes directrices concernant les plans de qualification de la fiabilité

des CI
INTERNATIONAL
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ICS 31.080.01 ISBN 978-2-8322-4471-5

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SIST EN 60749-43:2017
– 2 – IEC 60749-43:2017 © IEC 2017
CONTENTS

FOREWORD ........................................................................................................................... 4

INTRODUCTION ..................................................................................................................... 6

1 Scope .............................................................................................................................. 7

2 Normative references ...................................................................................................... 7

3 Terms and definitions ...................................................................................................... 8

4 Product categories and applications ................................................................................ 8

5 Failure ............................................................................................................................. 9

5.1 Failure distribution .................................................................................................. 9

5.2 Early failure .......................................................................................................... 10

5.2.1 Description .................................................................................................... 10

5.2.2 Early failure rate ............................................................................................ 11

5.2.3 Screening ...................................................................................................... 14

5.3 Random failure ..................................................................................................... 17

5.3.1 Description .................................................................................................... 17

5.3.2 Mean failure rate ........................................................................................... 17

5.4 Wear-out failure .................................................................................................... 20

5.4.1 Description .................................................................................................... 20

5.4.2 Wear-out failure rate ...................................................................................... 20

6 Reliability test ................................................................................................................ 23

6.1 Reliability test description ..................................................................................... 23

6.2 Reliability test plan ............................................................................................... 23

6.2.1 Procedures for creating a reliability test plan ................................................. 23

6.2.2 Estimation of the test time required to confirm the TDDB from the

number of test samples ................................................................................. 26

6.2.3 Estimation of the number of samples required to confirm the TDDB from

the test time................................................................................................... 27

6.3 Reliability test methods ......................................................................................... 28

6.4 Acceleration models for reliability tests ................................................................. 31

6.4.1 Arrhenius model ............................................................................................ 31

6.4.2 V-model: ........................................................................................................ 32

6.4.3 Absolute water vapor pressure model ............................................................ 32

6.4.4 Coffin-Manson model ..................................................................................... 32

7 Stress test methods ....................................................................................................... 32

8 Supplementary tests ...................................................................................................... 33

9 Summary table of assumptions ...................................................................................... 34

10 Summary ....................................................................................................................... 36

Bibliography .......................................................................................................................... 37

Figure 1 – Bathtub curve ....................................................................................................... 10

Figure 2 – Failure process of IC manufacturing lots during the early failure period ............... 11

Figure 3 – Weibull conceptual diagram of the early failure rate ............................................. 12

Figure 4 – Example of a failure ratio: α (in hundreds) and the number of failures for

CL of 60 % ............................................................................................................................ 14

Figure 5 – Screening and estimated early fail rate in Weibull diagram .................................. 15

Figure 6 – Bathtub curve setting the point immediately after production as the origin ........... 16

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SIST EN 60749-43:2017
IEC 60749-43:2017 © IEC 2017 – 3 –

Figure 7 – Bathtub curve setting the point after screening as the origin................................ 17

Figure 8 – Conceptual diagram of calculation method for the mean failure rate from

the exponential distribution ................................................................................................... 18

Figure 9 – Conceptual diagram of calculation method for the mean failure rate as an

extension of early failure ....................................................................................................... 19

Figure 10 – Conceptual diagram of the wear-out failure ........................................................ 21

Figure 11 – Conceptual diagram describing the concept of the acceleration test .................. 21

Figure 12 – Concept of the reliability test in a Weibull diagram (based on sample size) ....... 25

Figure 13 – Concept of the reliability test in a Weibull diagram (based on test time) ............ 28

Figure 14 – Difference in sampling sizes according to the m value (image) ........................... 29

Table 1 – Examples of product categories ............................................................................... 9

Table 2 – Cumulative failure probability 0,1 % over 10 years [×10 ] for the third, fifth

and seventh years ................................................................................................................ 25

Table 3 – Major reliability (life) test methods and purposes ................................................... 30

Table 4 – Examples of the number of test samples and the test time in typical

reliability (life) test methods .................................................................................................. 31

Table 5 – LTPD sampling table for acceptance number Ac = 0 .............................................. 33

Table 6 – Major reliability (strength) test methods and purposes ........................................... 33

Table 7 – Supplementary tests .............................................................................................. 34

Table 8 – Accelerating factors, calculation formulae and numerical values .......................... 35

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SIST EN 60749-43:2017
– 4 – IEC 60749-43:2017 © IEC 2017
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 43: Guidelines for IC reliability qualification plans
FOREWORD

1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising

all national electrotechnical committees (IEC National Committees). The object of IEC is to promote

international co-operation on all questions concerning standardization in the electrical and electronic fields. To

this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,

Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC

Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested

in the subject dealt with may participate in this preparatory work. International, governmental and non-

governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely

with the International Organization for Standardization (ISO) in accordance with conditions determined by

agreement between the two organizations.

2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international

consensus of opinion on the relevant subjects since each technical committee has representation from all

interested IEC National Committees.

3) IEC Publications have the form of recommendations for international use and are accepted by IEC National

Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC

Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any

misinterpretation by any end user.

4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications

transparently to the maximum extent possible in their national and regional publications. Any divergence

between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in

the latter.

5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity

assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any

services carried out by independent certification bodies.

6) All users should ensure that they have the latest edition of this publication.

7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and

members of its technical committees and IEC National Committees for any personal injury, property damage or

other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and

expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC

Publications.

8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is

indispensable for the correct application of this publication.

9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of

patent rights. IEC shall not be held responsible for identifying any or all such patent rights.

International Standard IEC 60749-43 has been prepared by IEC technical committee 47:

Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47/2389/FDIS 47/2406/RVD

Full information on the voting for the approval of this International Standard can be found in

the report on voting indicated in the above table.

This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

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SIST EN 60749-43:2017
IEC 60749-43:2017 © IEC 2017 – 5 –

A list of all parts in the IEC 60749 series, published under the general title Semiconductor

devices – Mechanical and climatic test methods, can be found on the IEC website.

The committee has decided that the contents of this document will remain unchanged until the

stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to

the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates

that it contains colours which are considered to be useful for the correct

understanding of its contents. Users should therefore print this document using a

colour printer.
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SIST EN 60749-43:2017
– 6 – IEC 60749-43:2017 © IEC 2017
INTRODUCTION

This document provides guidelines for semiconductor IC vendors in the preparation of

detailed reliability test plans for device qualification. Such plans are intended to be prepared

before commencing qualification tests and after consultation with the user of their

semiconductor integrated circuit product.

The guideline gives some examples for creating reliability qualification test plans to determine

appropriate reliability test conditions based on the quality standards demanded in use

conditions for each application of semiconductor integrated circuits. Categories are set for

automotive applications and for general applications as a target of reliability. The grade for

automotive use is further classified into two grades according to applications. The guideline

assumes annual operating hours, useful life, etc. for each grade, and defines the verification

methods for early failure rate and wear-out failure to propose appropriate reliability tests, and

at the same time, presents concepts to properly ensure the quality of semiconductor

integrated circuits using screening techniques which are designed to reduce the early failure

rate.

Note that the test conditions and the values of acceleration factors presented in this guideline

are shown to provide examples of calculations for obtaining reliability test conditions in order

to verify the required quality standards, and are not designed to define the standards to

ensure reliability of semiconductor integrated circuits.

NOTE Qualification tests are tests in which the semiconductor vendor takes account of the reliability required by

its product users.
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SIST EN 60749-43:2017
IEC 60749-43:2017 © IEC 2017 – 7 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS
Part 43: Guidelines for IC reliability qualification plans
1 Scope

This part of IEC 60749 gives guidelines for reliability qualification plans of semiconductor

integrated circuit products (ICs). This document is not intended for military- and space-related

applications.

NOTE 1 The manufacturer can use flexible sample sizes to reduce cost and maintain reasonable reliability by this

guideline adaptation based on EDR-4708, AEC Q100, JESD47 or other relevant document can also be applicable if

it is specified.

NOTE 2 The Weibull distribution method used in this document is one of several methods to calculate the

appropriate sample size and test conditions of a given reliability project.
2 Normative references

The following documents are referred to in the text in such a way that some or all of their

content constitutes requirements of this document. For dated references, only the edition

cited applies. For undated references, the latest edition of the referenced document (including

any amendments) applies.

IEC 60749-5, Semiconductor devices – Mechanical and climatic test methods – Part 5:

Steady-state temperature humidity bias life test

IEC 60749-6, Semiconductor devices – Mechanical and climatic test methods – Part 6:

Storage at high temperature

IEC 60749-15, Semiconductor devices – Mechanical and climatic test methods – Part 15:

Resistance to soldering temperature for through-hole mounted devices

IEC 60749-20, Semiconductor devices – Mechanical and climatic test methods – Part 20:

Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering

heat

IEC 60749-21, Semiconductor devices – Mechanical and climatic test methods – Part 21:

Solderability

IEC 60749-23, Semiconductor devices – Mechanical and climatic test methods – Part 23: High

temperature operating life

IEC 60749-25, Semiconductor devices – Mechanical and climatic test methods – Part 25:

Temperature cycling

IEC 60749-26, Semiconductor devices – Mechanical and climatic test methods – Part 26:

Electrostatic discharge (ESD) sensitivity testing – Human body model (HBM)

IEC 60749-28, Semiconductor devices – Mechanical and climatic test methods – Part 28:

Electrostatic discharge (ESD) sensitivity testing – Charged device model (CDM) – Device

level
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SIST EN 60749-43:2017
– 8 – IEC 60749-43:2017 © IEC 2017

IEC 60749-29, Semiconductor devices – Mechanical and climatic test methods – Part 29:

Latch-up test

IEC 60749-42, Semiconductor devices – Mechanical and climatic test methods – Part 42:

Temperature and humidity storage
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.

ISO and IEC maintain terminological databases for use in standardization at the following

addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
failure mode
style classification of a fault phenomenon which causes product failure

Note 1 to entry: Disconnection, a short circuit, occasional loss, abrasion, characteristic deterioration, etc. are

typical items considered as failure modes.
3.2
failure mechanism
physical, chemical or other process which has led to a failure
3.3
integrated circuit

microcircuit in which all or some of the circuit elements are inseparably associated and

electrically interconnected so that it is considered to be indivisible for the purpose of

construction and commerce
4 Product categories and applications

Quality-related requirements, operating hours, and operating condition of ICs demanded in

the field depend on the applications of products in which they are used. As an example of

creating scientific test plans, their applications are broadly classified into three product

categories: Automotive Use A; Automotive Use B; and Consumer Use. Table 1 shows a list of

quality-related requirements according to each product category and the definition of their use

conditions.
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SIST EN 60749-43:2017
IEC 60749-43:2017 © IEC 2017 – 9 –
Table 1 – Examples of product categories
Category Automotive Use A Automotive Use B Consumer Use

Criteria for Applications for automotive Applications for automotive Applications other than for

category use directly relating to safety. use not directly relating to automotive use. Industrial

(Failures can cause safety. applications shall be handled
accidents.) individually.

Examples of Powertrains, brakes, driving Navigation systems, car air- Home electronics, toys,

applications support systems, airbags conditioners, audio systems appliances
Annual 500 h (driving hours) 500 h (driving hours) Up to 8 760 h
operating hours
Differs depending on whether Differs among applications.
or not to work with KEY
ON/OFF.

Useful life 15 years (cumulative failure 15 years (cumulative failure Up to 10 years (cumulative

probability: 0,1 %) probability: 0,1 %) failure probability: 0,1 %)
Differs among applications.
Assumed Example of engine compartment
operating
T = 0 °C / T = 70 °C
T = −40 °C/ T = 125 °C
conditions a,min a,max
a,min a,max
T = 70°C/105°C (max.)
T = 100 °C/ T = 150 °C
(examples of j,typ j,max
conditions which
min. RH: 0 / max. RH: 100 %, RH = 10 (min.)/80 % (max.)
differ among
applications) RH (during 20 % power on )
RH (during 10 % driving) (during 70 % stop)
(during 60 % power off)
Example of interior environment
T = -40°C (min.)/85°C (max.)
T = 85°C (typ.)/125°C (max.)
RH = 0 (min.)/100 % (max.),
RH (during 10 % driving) (during 70 % stop)
-6 -6 -6

Early failure rate 1 × 10 or below per annum 50×10 or below per annum Up to 500 × 10 per annum

Differs among applications.
Random failure 10 FIT or below 50 FIT or below >50 FIT (typical)
rate
Differs among applications.

NOTE These are examples of application conditions and requirements that do not have to all be met to be

relevant for each use case.
5 Failure
5.1 Failure distribution

Failure distribution of ICs can be broadly divided into three regions: early failure portion

(e.g., t = 1 year), random failure portion, and wear-out failure portion. Figure 1 shows the

ELF

relationship between the field use time and the instantaneous failure rate (bathtub curve).

Failure distributions for each region are described in detail in 5.2 to 5.4.

Most early failures are screened within manufacturing processes of IC vendors. However, ICs

not fully screened can expose problems in a relatively short period after their operation starts

in the field.
Random failure has been considered to achieve a certain failure rate with respec
...

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