EN IEC 60749-23:2026

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document. This edition includes the following significant technical changes with respect to the previous edition: a) absolute stress test definitions and resultant test durations have been updated.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 23: Lebensdauer bei hoher Temperatur

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 23 : Durée de vie en fonctionnement à haute température

L'IEC 60749-23:2025 spécifie l'essai utilisé pour déterminer les effets dans le temps des conditions de polarisation et de température sur des dispositifs à état solide. Il simule les conditions de fonctionnement des dispositifs d’une manière accélérée et il est essentiellement utilisé pour la qualification et le contrôle de fiabilité. Une forme de durée de vie utilisant une température élevée avec polarisation sur une courte durée, généralement connue sous le nom de "rodage", peut être utilisée pour dépister les défaillances liées à la mortalité infantile. L’utilisation détaillée et l’application du rodage ne font pas partie du domaine d’application du présent document. Cette édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente: a) les définitions des essais de contraintes absolues et les durées d'essai qui en résultent ont été mises à jour.

Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 23. del: Obratovalna življenjska doba pri visoki temperaturi (IEC 60749-23:2025)

Standard IEC 60749-23:2025 določa preskus, ki se uporablja za določanje vplivov pogojev prednapetosti in temperature na polprevodniške elemente v daljšem časovnem obdobju. Preskus simulira obratovalne pogoje s pospeševanjem ter je namenjen predvsem za kvalifikacijo in spremljanje zanesljivosti elementov. Obliko preskusa življenjske dobe s prednapetostjo pri povišani temperaturi, izvedeno v kratkem časovnem obdobju, splošno znano kot burn-in (vžig), je mogoče uporabiti za odkrivanje zgodnjih okvar (začetnih odpovedi). Podrobna uporaba vžiga ne spada na področje uporabe tega dokumenta.  Ta izdaja v primerjavi s prejšnjo vključuje naslednje pomembne tehnične spremembe:  a) definicije preskusov absolutnih obremenitev in posledično določena trajanja preskusov so bila posodobljena.

General Information

• Status: Published
• Publication Date: 29-Jan-2026
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 30-Jan-2026
• Due Date: 07-Jul-2025
• Completion Date: 30-Jan-2026
• Ref Project: SIST EN IEC 60749-23:2026 - Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 60749-23:2025)

Relations

• Replaces: EN 60749-23:2004 - Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
• Effective Date: 15-Oct-2024
• Replaces: EN 60749-23:2004/A1:2011 - Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
• Effective Date: 15-Oct-2024
• Referred By: EN 60749-43:2017 - Semiconductor devices - Mechanical and climatic test methods - Part 43: Guidelines for IC reliability qualification plans
• Effective Date: 03-Feb-2026
• Referred By: EN IEC 60749-41:2020 - Semiconductor devices - Mechanical and climatic test methods - Part 41: Standard reliability testing methods of non-volatile memory devices
• Effective Date: 03-Feb-2026
• Referred By: EN IEC 63287-1:2021 - Semiconductor devices - Generic semiconductor qualification guidelines - Part 1: Guidelines for IC reliability qualification
• Effective Date: 03-Feb-2026

Overview

EN IEC 60749-23:2026 - Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life - is an international standard specifying test methods to determine the effects of bias conditions and temperature on semiconductor devices over extended periods. Developed by CENELEC (CLC) and based on IEC 60749-23:2025, this standard enables manufacturers and quality professionals to reliably evaluate device qualification and long-term reliability. The standard outlines accelerated testing procedures that simulate real-life operating conditions for solid state devices, particularly focusing on high temperature operating life (HTOL) and other relevant bias life tests.

Key Topics

• Test Objective: Simulate and accelerate the effects of prolonged bias conditions and elevated temperatures on semiconductor devices to assess reliability and qualification.
• Test Apparatus: Requirements for environmental chambers, circuitry, device mounting, calibrated power supplies, and signal sources to ensure consistent and accurate stress application.
• Stress Conditions:
  • High temperature stress (typically minimum junction temperature of 125°C).
  • Controlled bias conditions (maximum operating or absolute maximum voltages within device spec).
  • Multiple bias configurations: forward bias, operating life (HTOL/LTOL), reverse bias, and gate bias.
• Testing Procedures:
  • Precise application of temperature and bias stress for pre-defined durations.
  • Cool-down protocols and electrical measurements before, during (interim), and after stress exposure.
• Failure Criteria: Definition of failure based on compliance with relevant performance specifications, typically referenced from the IEC 60747 series.
• Reporting Requirements: Detailed documentation of test conditions, durations, results, and any deviations.

Applications

This standard is widely applicable within the electronics and semiconductor manufacturing industries, supporting:

• Device Qualification: Establishing confidence in new or revised semiconductor product lines by demonstrating durability under challenging thermal and electrical conditions.
• Reliability Monitoring: Ongoing surveillance of product performance, ensuring consistent operation over projected lifespans and identifying failure mechanisms early.
• Quality Assurance: Providing robust, repeatable, and internationally recognized test processes for procurement contracts, supplier audits, and regulatory compliance.
• Process Improvement: Identifying process-induced weaknesses or variations, enabling targeted corrective actions in manufacturing or design.

Typical scenarios for applying EN IEC 60749-23:2026 include:

• Reliability assessment of memory, logic, and power semiconductors.
• Screening for latent failures that can be accelerated by high temperature or voltage stress.
• Aligning with customer, regulatory, or industry requirements for device stability and safe operation.
• Supporting claims of product lifetime and warranty with standardized testing evidence.

Related Standards

Organizations using EN IEC 60749-23:2026 often reference or integrate additional standards for a comprehensive reliability and qualification program:

• IEC 60749 Series: Covers a wide spectrum of mechanical and climatic test methods for semiconductor devices.
• IEC 60747 Series: Defines device-specific performance specifications and general requirements for discrete semiconductors and integrated circuits.
• IEC 60749-34: Focuses on power cycling tests, often complementary to HTOL for power semiconductor devices.
• JEDEC JESD22-A108: Serves as a foundational document for HTOL testing in the electronics industry.
• ISO/IEC Terminology Databases: Provide harmonized definitions and terms for international standardization.

Implementing EN IEC 60749-23:2026 helps manufacturers, engineers, and testing laboratories ensure that semiconductor devices can meet the evolving needs of sectors such as automotive, aerospace, telecommunications, and consumer electronics, where high reliability is essential. By following this standard, organizations reinforce their commitment to product quality, regulatory conformance, and customer satisfaction in a globally competitive market.

Standards Content (Sample)

SLOVENSKI STANDARD
01-marec-2026
Nadomešča:
SIST EN 60749-23:2004
SIST EN 60749-23:2004/A1:2011
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 23. del:
Obratovalna življenjska doba pri visoki temperaturi (IEC 60749-23:2025)
Semiconductor devices - Mechanical and climatic test methods - Part 23: High
temperature operating life (IEC 60749-23:2025)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 23:
Lebensdauer bei hoher Temperatur (IEC 60749-23:2025)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
23: Durée de vie en fonctionnement à haute température (IEC 60749-23:2025)
Ta slovenski standard je istoveten z: EN IEC 60749-23:2026
ICS:
19.020 Preskuševalni pogoji in Test conditions and
postopki na splošno procedures in general
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN IEC 60749-23

NORME EUROPÉENNE
EUROPÄISCHE NORM January 2026
ICS 31.080.01 Supersedes EN 60749-23:2004; EN 60749-
23:2004/A1:2011
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 23: High temperature operating life
(IEC 60749-23:2025)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 23 : Durée de vie en Prüfverfahren - Teil 23: Lebensdauer bei hoher Temperatur
fonctionnement à haute température (IEC 60749-23:2025)
(IEC 60749-23:2025)
This European Standard was approved by CENELEC on 2026-01-13. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Türkiye and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2026 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60749-23:2026 E

European foreword
The text of document 47/2962/FDIS, future edition 2 of IEC 60749-23, prepared by TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-23:2026.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2027-01-31
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2029-01-31
document have to be withdrawn
This document supersedes EN 60749-23:2004 and all of its amendments and corrigenda (if any).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 60749-23:2025 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following note has to be added for the standard indicated:
IEC 60749-34 NOTE Approved as EN 60749-34

IEC 60749-23 ®
Edition 2.0 2025-12
INTERNATIONAL
STANDARD
Semiconductor devices - Mechanical and climatic test methods -
Part 23: High temperature operating life
ICS 31.080.01  ISBN 978-2-8327-0903-0

IEC 60749-23:2025-12(en)
IEC 60749-23:2025 © IEC 2025
CONTENTS
FOREWORD . 2
1 Scope . 4
2 Normative references . 4
3 Terms and definitions . 4
4 Test apparatus . 4
4.1 Testing requirements . 4
4.2 Circuitry . 4
4.3 Device schematic . 5
4.4 Power . 5
4.5 Device mounting . 5
4.6 Power supplies and signal sources . 5
4.7 Environmental chamber . 5
5 Procedure . 5
5.1 Stress requirements . 5
5.2 Stress duration . 5
5.3 Stress conditions . 5
5.3.1 Stress condition application . 5
5.3.2 Ambient temperature . 6
5.3.3 Operating voltage . 6
5.3.4 Biasing configurations . 6
6 Cool-down . 7
7 Measurements . 7
8 Failure criteria . 7
9 Life testing reporting . 8
10 Summary . 8
Bibliography . 9

Table 1 – Additional stress requirements for parts not tested within time window . 7

IEC 60749-23:2025 © IEC 2025
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Semiconductor devices - Mechanical and climatic test methods -
Part 23: High temperature operating life
FOREWORD
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the latest information, which may be obtained from the patent database available at https://patents.iec.ch. IEC
shall not be held responsible for identifying any or all such patent rights.
IEC 60749-23 has been prepared by IEC technical committee 47: Semiconductor devices. It is
an International Standard.
This second edition cancels and replaces the first edition published in 2004 and
Amendment 1:2011. It is based on JEDEC JESD22-A108G. It is used with permission of the
copyright holder, JEDEC Solid State Technology Association. This edition constitutes a
technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) absolute stress test definitions and resultant test durations have been updated.
IEC 60749-23:2025 © IEC 2025
The text of this International Standard is based on the following documents:
Draft Report on voting
47/2962/FDIS 47/2983/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Su
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